IRLR3705Z MOSFET - Les principales caractéristique des MOSFET. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: IRLR3705Z

Type de transistor: MOSFET

Polarité: N

Puissance maximale dissipée (Pd): 130

Tension drain-source de rupture (Uds): 55V

Tension grille-source de rupture (Ugs): 16

Courant de drain maximum supportable (Id): 89

Température maximale de jonction en fonctionnement (Tj), °C:

Temps de commutation (tr):

Capacité de sortie (Cd), pF:

Résistance drain-source RDS (activé), Ohm: 0.008

Boitier: DPak

Recherche équivalences (un remplaçant pour le transistor IRLR3705Z )

IRLR3705Z - Fiche technique PDF, Datasheet

4.1. irlr3715.pdf Size:122K _international_rectifier

0.8 ––– TJ = 125°C, IS = 21A, VGS = 0V trr Reverse Recovery Time ––– 37 56 ns TJ = 25°C, IF = 21A, VR=20V Qrr Reverse Recovery Charge ––– 28 42 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 38 57 ns TJ = 125°C, IF = 21A, VR=20V Qrr Reverse Recovery Charge ––– 30 45 nC di/dt = 100A/µs 2 www.irf.com IRLR/U3715 1000 1000 VGS VGS TOP 15V TOP 15V 10V 10V 4.5V 4.5V 3.5V 3.5V 3.3V 3.3V 3.0V 3.0V 100 2.7V 2.7V BOTTOM 2.5V BOTTOM 2.5V 100 10 2.5V 10 2.

4.2. irlr3714.pdf Size:111K _international_rectifier

––– 0.88 ––– TJ = 125°C, IS = 18A, VGS = 0V trr Reverse Recovery Time ––– 35 53 ns TJ = 25°C, IF = 18A, VR=10V Qrr Reverse Recovery Charge ––– 34 51 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 35 53 ns TJ = 125°C, IF = 18A, VR=10V Qrr Reverse Recovery Charge ––– 35 53 nC di/dt = 100A/µs 2 www.irf.com IRLR3714/IRLU3714 10000 1000 VGS VGS TOP 15V TOP 15V 10V 10V 4.5V 4.5V 1000 3.0V 3.0V 2.7V 2.7V 100 2.5V 2.5V 2.2V 2.2V 100 BOTTOM 2.0V BOTTOM 2.0V 10 10 1 2.0V 1

4.3. irlr3715z.pdf Size:204K _international_rectifier

D Continuous Source Current ––– ––– MOSFET symbol (Body Diode) A showing the G ISM Pulsed Source Current ––– ––– 200 integral reverse S (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 12A, VGS = 0V trr Reverse Recovery Time ––– 11 17 ns TJ = 25°C, IF = 12A, VDD = 10V Qrr di/dt = 100A/µs Reverse Recovery Charge ––– 3.5 5.3 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IR

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