IRF3710 Répertoire mondial des transistors gratuit

 

IRF3710 MOSFET - Les principales caractéristique des MOSFET. Caractéristiques techniques. Répertoire mondial des transistors

Type: IRF3710

Transistor à effet de champ: MOSFET

Polarité: N

Puissance maximale dissipée (Pd): 200

Tension drain-source de rupture (Vds): 100

Tension grille-source de rupture (Vgs): 10

Courant de drain maximum supportable (Id): 57

Température maximale de jonction en fonctionnement (Tj), °C: 150

Temps de commutation (tr):

Capacité de sortie (Cd), pF:

Résistance drain-source RDS (activé), Ohm: 0.025

Boitier: TO220AB

Recherche équivalences (un remplaçant pour le transistor IRF3710 )

IRF3710 说明书

1.1. irf3710z.pdf Size:172K _international_rectifier

IRF3710
IRF3710

PD - 94632 IRF3710Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 18m? 175C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 59A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest

1.2. irf3710.pdf Size:94K _international_rectifier

IRF3710
IRF3710

PD - 91309A IRF3710 HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 23m? G Fast Switching Fully Avalanche Rated ID = 57A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

1.3. irf3710s.pdf Size:184K _international_rectifier

IRF3710
IRF3710

PD -91310C IRF3710S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF3710S) VDSS = 100V Low-profile through-hole (IRF3710L) 175C Operating Temperature RDS(on) = 0.025? Fast Switching G Fully Avalanche Rated ID = 57A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

1.4. irf3710.pdf Size:274K _first_silicon

IRF3710
IRF3710

SEMICONDUCTOR IRF3710 TECHNICAL DATA N-Channel Power MOSFET (100V/59A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25℃) Symbol Rating Unit 1.Gate 2.Drain

D'autres types de transistors... IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 , IRFP150N , IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 .

 


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INDEX

UPDATE

MOSFET AOTF7S60L | AOTF7S60 | AOTF298L | AOTF20S60L | AOTF18N65L | AOTF15S65L | AOTF15S60L | AOTF11S65L | AOD606 | AOD518 | AOD512 | AOD490 | AOD488 | AOD472A | AOD472 |

Les mots de moins de 2 lettres (chiffres) sont ignorés lors de la recherché