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RFP2N18L MOSFET - Les principales caractéristique des MOSFET. Caractéristiques techniques. Répertoire mondial des transistors

Marquage composant: RFP2N18L

Type de transistor: MOSFET

Polarité: N

Puissance maximale dissipée (Pd): 25

Tension drain-source de rupture (Uds): 180

Tension grille-source de rupture (Ugs): 10

Courant de drain maximum supportable (Id): 2

Température maximale de jonction en fonctionnement (Tj), °C: 150

Temps de commutation (tr): 10

Capacité de sortie (Cd), pF: 60

Résistance drain-source RDS (activé), Ohm: 3.65

Boitier: TO220AB

Recherche équivalences (un remplaçant pour le transistor RFP2N18L )

RFP2N18L PDF doc:

1.1. rfl1n18l_rfl1n20l_rfp2n18l_rfp2n20l.pdf Size:87K _njs

RFP2N18L
RFP2N18L



4.1. rfp2n08l_rfp2n10l.pdf Size:40K _intersil

RFP2N18L
RFP2N18L

RFP2N08L, RFP2N10L Data Sheet July 1999 File Number 2872.2 2A, 80V and 100V, 1.050 Ohm, Logic Level, Features N-Channel Power MOSFETs • 2A, 80V and 100V The RFP2N08L and RFP2N10L are N-Channel enhancement • rDS(ON) = 1.050Ω mode silicon gate power field effect transistors specifically • Design Optimized for 5V Gate Drives designed for use with logic level (5V) driving sources i

5.1. rfp2n20l.pdf Size:342K _fairchild_semi

RFP2N18L
RFP2N18L

RFP2N20L Data Sheet January 2002 2A, 200V, 3.500 Ohm, Logic Level, Features N-Channel Power MOSFET • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate • rDS(ON) = 3.500Ω power field effect transistor is specifically designed for use • Design Optimized for 5V Gate Drives with logic level (5V) driving sources in applications such as programmable controllers, autom

5.2. rfp2n20.pdf Size:40K _intersil

RFP2N18L
RFP2N18L

RFP2N20 Data Sheet July 1999 File Number 2881.2 2A, 200V, 3.500 Ohm, N-Channel Power Features MOSFET • 2A, 200V These are N-Channel enhancement mode silicon gate • rDS(ON) = 3.500Ω power field effect transistors designed for applications such Symbol as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching D transi

D'autres types de transistors... RFL1N20 , RFL1N20L , RFL2N05 , RFL2N05L , RFL2N06 , RFL2N06L , RFL1P08 , RFL1P10 , RFP50N06 , AP9916H , AP9916J , SSM70T03H , SSM70T03J , IRF630MFP , IRFD123 , SIHFD123 , 2SK1202 .

 


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INDEX

UPDATE

MOSFET IXFH50N50P3 | IXFQ50N50P3 | IXFT50N50P3 | IPF06N03LA | IPS06N03LA | IPU06N03LA | IPD06N03LA | 2SK1202 | SIHFD123 | IRFD123 | IRF630MFP | SSM70T03J | SSM70T03H | AP9916J | AP9916H |

Les mots de moins de 2 lettres (chiffres) sont ignorés lors de la recherché