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IRFZ46N MOSFET - Les principales caractéristique des MOSFET. Caractéristiques techniques. Répertoire mondial des transistors

Type: IRFZ46N

Transistor à effet de champ: MOSFET

Polarité: N

Puissance maximale dissipée (Pd): 88

Tension drain-source de rupture (Vds): 55

Tension grille-source de rupture (Vgs): 10

Courant de drain maximum supportable (Id): 46

Température maximale de jonction en fonctionnement (Tj), °C: 150

Temps de commutation (tr):

Capacité de sortie (Cd), pF:

Résistance drain-source RDS (activé), Ohm: 0.02

Boitier: TO220AB

Recherche équivalences (un remplaçant pour le transistor IRFZ46N )

IRFZ46N PDF doc:

1.1. irfz46n.pdf Size:85K _international_rectifier

IRFZ46N
IRFZ46N

PD-91277 IRFZ46N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 16.5m? G Fast Switching Fully Avalanche Rated ID = 53A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sil

1.2. irfz46ns.pdf Size:149K _international_rectifier

IRFZ46N
IRFZ46N

PD - 9.1305B IRFZ46NS IRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS) D Low-profile through-hole (IRFZ46NL) VDSS = 55V 175C Operating Temperature Fast Switching RDS(on) = 0.0165? Fully Avalanche Rated G Description ID = 53A Advanced HEXFET Power MOSFETs from International S Rectifier utilize advanced processing techniques to achieve extr

4.1. irfz46s.pdf Size:358K _international_rectifier

IRFZ46N
IRFZ46N

PD - 9.922A IRFZ46S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 50V Surface Mount (IRFZ46S) Low-profile through-hole (IRFZ46L) 175C Operating Temperature RDS(on) = 0.024? Fast Switching G ID = 72A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

4.2. irfz46.pdf Size:154K _international_rectifier

IRFZ46N
IRFZ46N

Document Number: 90372 www.vishay.com 1283 Document Number: 90372 www.vishay.com 1284 Document Number: 90372 www.vishay.com 1285 Document Number: 90372 www.vishay.com 1286 Document Number: 90372 www.vishay.com 1287 Document Number: 90372 www.vishay.com 1288 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as par

D'autres types de transistors... IRFZ44A , IRFZ44E , IRFZ44EL , IRFZ44ES , IRFZ44N , IRFZ44NL , IRFZ44NS , IRFZ45 , IRF740 , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL , IRFZ48NS , IRL1004 , IRL1004L , IRL1004S .

 


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INDEX

UPDATE

MOSFET 2SK642 | 2SK641 | SVF2N60D | SVF2N60T | SVF2N60F | SVF2N60M | FQP630 | FMR23N50E | FMV23N50E | FMH23N50E | STK0460F | UTC50N06L | TSP8N60M | TSF8N60M | STK630F |

Les mots de moins de 2 lettres (chiffres) sont ignorés lors de la recherché