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2SK981
MOSFET - Les principales caractéristique des MOSFET. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: 2SK981
Type de transistor: MOSFET
Polarité: N
Puissance maximale dissipée (Pd): 15
Tension drain-source de rupture (Uds): 400V
Tension grille-source de rupture (Ugs): 20
Courant de drain maximum supportable (Id): 3
Température maximale de jonction en fonctionnement (Tj), °C: 150
Temps de commutation (tr):
Capacité de sortie (Cd), pF: 310
Résistance drain-source RDS (activé), Ohm: 3
Boitier: SPAK
Recherche équivalences (un remplaçant pour le transistor 2SK981
) 2SK981
- Fiche technique PDF, Datasheet
5.1. 2sk982.pdf  Size:142K _toshiba  |
 | nal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal ins |
D'autres types de transistors... 2SK971
, 2SK972
, 2SK973L
, 2SK973S
, 2SK974L
, 2SK974S
, 2SK975
, 2SK979
, IRFZ44N
, 2SK981A
, 2SK985
, 2SK987
, 2SK988
, 2SK989
, 2SK990
, 2SK991
, 2SK992
.
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