IXTP160N075T MOSFET PDF: N-Ch, 75V, 160A. Full specification with pinout and replacement list

IXTP160N075T PDF Specs and Replacement

   Type Designator: IXTP160N075T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 80 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO220

IXTP160N075T substitution

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IXTP160N075T PDF Specs

..1. Size:174K ixys
ixta160n075t ixtp160n075t.pdf pdf_icon

Preliminary Technical Information IXTA160N075T VDSS = 75 V TrenchMVTM IXTP160N075T ID25 = 160 A Power MOSFET RDS(on) 6.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S D (TAB) ID25 TC = 25 C 16... See More ⇒

5.1. Size:133K ixys
ixtp160n085t.pdf pdf_icon

Advance Technical Information IXTQ 160N085T VDSS = 85 V Trench Gate IXTA 160N085T ID25 = 160 A Power MOSFET IXTP 160N085T RDS(on) = 6.0 m N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C85 V G VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V D (TAB) S VGSM 20 V TO-220 (IXTP) ID25 TC = 25 C 160 A IDRM... See More ⇒

5.2. Size:204K ixys
ixta160n04t2 ixtp160n04t2.pdf pdf_icon

Preliminary Technical Information IXTA160N04T2 VDSS = 40V TrenchT2TM IXTP160N04T2 ID25 = 160A Power MOSFET RDS(on) 5m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C40 V S VDGR TJ = 25 C to 175 C, RGS = 1M 40 V (TAB) VGSM Transient 20 V TO-220 (IXTP) ID25 TC ... See More ⇒

6.1. Size:174K ixys
ixta160n10t ixtp160n10t.pdf pdf_icon

Preliminary Technical Information IXTA160N10T VDSS = 100 V TrenchMVTM IXTP160N10T ID25 = 160 A Power MOSFET RDS(on) 7.0 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 175 C 100 V TO-220 (IXTP) VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V ... See More ⇒

Detailed specifications: IXTP140N055T2 , IXTP140P05T , IXTP14N60P , IXTP14N60PM , IXTP152N085T , IXTP15N50L2 , IXTP15P15T , IXTP160N04T2 , 20N60 , IXTP160N10T , IXTP16N50P , IXTP16N50PM , IXTP170N075T2 , IXTP180N085T , IXTP180N10T , IXTP182N055T , IXTP18N60PM .