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2N2363
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: 2N2363
Matériau utilisé: Ge
Polarité du transistor: PNP
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.075
Tension collecteur–base (maximale) Ucb: 30
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 20
Tension émetteur–base (maximale) Ueb: 0
Courant collecteur maximal (Ic): 0.05
Température maximale de jonction (Tj), °C: 100
Fréquence maximale de fonctionnement fT: 800
Capacite collecteur (Cc), pF: 3
Gain en courant DC hFE (hfe): 10
Boitier: TO72
Recherche équivalences (un remplaçant pour le transistor 2N2363
) 2N2363
- Fiche technique PDF, Datasheet
5.1. 2n2369.pdf  Size:291K _motorola  |
 | = 10 Vdc, f = 100 MHz)
Output Capacitance Cobo — 4.0 pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cibo — 4.0 pF
(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Storage Time ts — 13 ns
(IC = IB1 = 10 mAdc, IB2 = –10 mAdc)
Turn–On Time ton — 12 ns
(IC = 10 mAdc, IB1 = 3.0 mA, IB2 = –1.5 mA, VCC = 3.0 Vdc)
Turn–Off Time toff — 18 ns
(IC = 10 mAdc, IB1 = 3.0 mA, IB2 = –1.5 mA, VCC = 3.0 Vdc)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2 Motorola |
5.2. 2n2369re.pdf Size:291K _motorola  |
 | = 10 Vdc, f = 100 MHz)
Output Capacitance Cobo — 4.0 pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cibo — 4.0 pF
(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Storage Time ts — 13 ns
(IC = IB1 = 10 mAdc, IB2 = –10 mAdc)
Turn–On Time ton — 12 ns
(IC = 10 mAdc, IB1 = 3.0 mA, IB2 = –1.5 mA, VCC = 3.0 Vdc)
Turn–Off Time toff — 18 ns
(IC = 10 mAdc, IB1 = 3.0 mA, IB2 = –1.5 mA, VCC = 3.0 Vdc)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2 Motorola |
5.3. 2n2369.pdf Size:52K _philips  |
 | andbook, full pagewidth
RB RC
Vo (probe)
(probe)
oscilloscope oscilloscope
450 ? 450 ?
R2
Vi
DUT
R1
MLB826
Vi = 0.5 V to 4.2 V; T = 500 µs; tp =10 µs; tr =tf ? 3 ns.
R1 = 56 ?; R2 = 1 k?; RB =1k?; RC = 270 ?.
VBB = 0.2 V; VCC = 2.7 V.
Oscilloscope input impedance Zi =50 ?.
Fig.2 Test circuit for switching times.
1997 Jun 20 4
Philips Semiconductors Product specification
NPN switching transistor 2N2369
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads SOT18/ |
5.4. 2n2369a.pdf Size:524K _central 5.5. 2n4449_2n2369a.pdf Size:66K _microsemi  |
 | 1.0 MHz
(1)Pulse Test: Pulse Width = 300µs, Duty Cycle ? 2.0%.
SWITCHING CHARACTERISTICS
Turn-On Time
t
on 12 ?s
IC = 10 mAdc; IB1= 3.0 mAdc, IB2 = 1.5 mAdc
Turn-Off Time
t
off 18 ?s
IC = 10 mAdc; IB1 = 3.0 mAdc, IB2 = 1.5 mAdc
Charge Storage Time
t
s 13 ?s
IC = 10 mAdc; IB1 = 10 mAdc, IB2 = 10 mAdc
6 Lake Street, Lawrence, MA 01841 120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 2 of 2
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