A159
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: A159
Matériau utilisé: Si
Polarité du transistor: NPN
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.3
Tension collecteur–base (maximale) Ucb: 30
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 20
Tension émetteur–base (maximale) Ueb: 5
Courant collecteur maximal (Ic): 0.1
Température maximale de jonction (Tj), °C: 175
Fréquence maximale de fonctionnement fT: 150
Capacite collecteur (Cc), pF: 5
Gain en courant DC hFE (hfe): 240
Boitier: TO18
Recherche équivalences (un remplaçant pour le transistor A159
) A159
- Fiche technique PDF, Datasheet
1.1. 2sa1590.pdf  Size:89K _sanyo 1.2. 2sa1592.pdf Size:155K _sanyo  |
 | nst any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO beli |
1.3. 2sa1593_2sc4135.pdf Size:112K _sanyo  |
 | V
Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)1A, IB=(–)100mA (–)0.85 (–)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(–)10µA, IE=0 (–)120 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(–)1mA, RBE=? (–)100 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(–)10µA, IC=0 (–)6 V
(80) ns
Turn-ON Time ton See specified Test Circuit
80 ns
(750) ns
Storage Time tstg See specified Test Circuit
1000 ns
(40) ns
Fall Time tf See specified Test Circuit
50 ns
Switching Time |
1.4. 2sa1591.pdf Size:89K _sanyo 1.5. kra159f.pdf Size:386K _kec  |
 | F KRA158F
1000
-1.00
VO= -5V
GI= 20
Ta =100 C
Ta =100 C
Ta =25 C
100 -0.10
Ta =-25 C
Ta =25 C
Ta =-25 C
-0.01
10
-1 -10 -100
1 10 100
OUTPUT CURRENT IO (mA)
OUTPUT CURRENT IO (mA)
IO - VI(ON) IO - VI(OFF)
KRA159F
KRA159F
-10000
-100
VO= -5V
VO= -0.2V
-1000
Ta =100 C
-10
Ta =25 C
-100
Ta =-25 C
-10
-1
-0.6 -1.0 -1.4 -1.8 -2.2 -2.6 -3.0
-0.1 -1 -10 -100
INPUT ON VOLTAGE VI(ON) (V)
INPUT OFF VOLTAGE VI(OFF) (V)
GI - IO VO(ON) - IO
KRA159F KRA159F
1000
-1.00
|
1.6. 2sa1599.pdf Size:289K _shindengen 1.7. 2sa1598.pdf Size:314K _shindengen 1.8. 2sa1599.pdf Size:109K _inchange_semiconductor 1.9. 2sa1598.pdf Size:148K _inchange_semiconductor D'autres types de transistors... 9400
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.
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