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BC860BWT1
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: BC860BWT1
Matériau utilisé: Si
Polarité du transistor: PNP
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.3
Tension collecteur–base (maximale) Ucb: 50
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 45
Tension émetteur–base (maximale) Ueb: 5
Courant collecteur maximal (Ic): 0.1
Température maximale de jonction (Tj), °C: 150
Fréquence maximale de fonctionnement fT: 300
Capacite collecteur (Cc), pF: 6
Gain en courant DC hFE (hfe): 290
Boitier: SOT323
Recherche équivalences (un remplaçant pour le transistor BC860BWT1
) BC860BWT1
- Fiche technique PDF, Datasheet
5.1. bc859w_bc860w.pdf  Size:122K _philips  |
 | 3
NXP Semiconductors Product data sheet
PNP general purpose transistors BC859W; BC860W
MBH727
400
handbook, full pagewidth
hFE
VCE = -5 V
300
200
100
0
-10-2 -10-1 -1 -10 -102 IC (mA) -103
BC859BW; BC860BW.
Fig.2 DC current gain; typical values.
MBH728
600
handbook, full pagewidth
hFE
500
VCE = -5 V
400
300
200
100
0
-10-2 -10-1 -1 -10 -102 IC (mA) -103
BC859CW; BC860CW.
Fig.3 DC current gain; typical values.
1999 Apr 12 4
NXP Semiconductors Product data sheet
|
5.2. bc859_bc860.pdf Size:131K _philips  |
 | 0 mA; VCE = -5 V; f = 100 MHz 100 - - MHz
F noise figure IC = -200 ?A; VCE = -5 V; RS = 2 k?;
f = 30 Hz to 15 kHz
BC859B; BC860B; - - 4 dB
BC859C; BC860C
noise figure IC = -200 ?A; VCE = -5 V; RS = 2 k?;
f = 1 kHz; B = 200 Hz
BC859B; BC860B; - - 4 dB
BC859C; BC860C
Notes
1. VBEsat decreases by about -1.7 mV/K with increasing temperature.
2. VBE decreases by about -2 mV/K with increasing temperature.
2004 Jan 16 4
NXP Semiconductors Product data sheet
PNP general purpose transis |
5.3. bc859w_bc860w_4.pdf Size:51K _philips  |
 | ductors Product specification
PNP general purpose transistors BC859W; BC860W
MBH727
400
handbook, full pagewidth
hFE
VCE = -5 V
300
200
100
0
-10-2 -10-1 -1 -10 -102 IC (mA) -103
BC859BW; BC860BW.
Fig.2 DC current gain; typical values.
MBH728
600
handbook, full pagewidth
hFE
500
VCE = -5 V
400
300
200
100
0
-10-2 -10-1 -1 -10 -102 IC (mA) -103
BC859CW; BC860CW.
Fig.3 DC current gain; typical values.
1999 Apr 12 4
Philips Semiconductors Product specification
PNP gen |
5.4. bc859_bc860_4.pdf Size:51K _philips  |
 | 60C
Notes
1. VBEsat decreases by about -1.7 mV/K with increasing temperature.
2. VBE decreases by about -2 mV/K with increasing temperature.
1999 May 28 3
Philips Semiconductors Product specification
PNP general purpose transistors BC859; BC860
MBH727
400
handbook, full pagewidth
hFE
VCE = -5 V
300
200
100
0
-10-2 -10-1 -1 -10 -102 IC (mA) -103
BC859B; BC860B.
Fig.2 DC current gain; typical values.
MBH728
600
handbook, full pagewidth
hFE
500
VCE = -5 V
400
300
200
10 |
5.5. bc856_bc857_bc858_bc859_bc860.pdf Size:144K _fairchild_semi  |
 | r
BC860CMTF 9EC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
Note1 : Affix “-A,-B,-C” means hFE classification.
Affix “-M” means the matte type package.
Affix “-TF” means the tape & reel type packing.
2 www.fairchildsemi.com
BC856- BC860 Rev. B
BC856- BC860 PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
-50
1000
-45
IB = - 400µA
VCE = - 5V
-40 IB = - 350µA
IB = - 300µA
-35
IB = - 250µA
-30
-25 IB = - 200µA
100
-20 IB = - 150µA
-15
IB = - 10 |
5.6. bc856_bc857_bc858_bc859_bc860.pdf Size:56K _samsung 5.7. bc856_bc857_bc858_bc859_bc860.pdf Size:271K _siemens  |
 | V, f = 100 MHz
Output capacitance Cobo –3–pF
VCB = 10 V, f = 1 MHz
Input capacitance Cibo –8–
VCB = 0.5 V, f = 1 MHz
Short-circuit input impedance h11e k?
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 A … BC 859 A – 2.7 –
BC 856 B … BC 860 B – 4.5 –
BC 857 C … BC 860 C – 8.7 –
Open-circuit reverse voltage transfer ratio h12e
10–4
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 A … BC 859 A – 1.5 –
BC 856 B … BC 860 B – 2.0 –
BC 857 C … BC 860 C – 3.0 –
Short-circuit forward current transfer rati |
5.8. bc856w_bc857w_bc858w_bc859w_bc860w.pdf Size:273K _siemens  |
 | , f = 1 MHz
Input capacitance Cibo –10 –
VCB = 0.5 V, f = 1 MHz
Short-circuit input impedance h11e k?
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 AW … BC 859 AW – 2.7 –
BC 856 BW … BC 860 BW – 4.5 –
BC 857 CW … BC 860 CW – 8.7 –
Open-circuit reverse voltage transfer ratio h12e
10–4
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 AW … BC 859 AW – 1.5 –
BC 856 BW … BC 860 BW – 2.0 –
BC 857 CW … BC 860 CW – 3.0 –
Short-circuit forward current transfer ratio h21e –
IC = 2 mA, VCE = 5 V, f = 1 kHz
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5.9. bc856_bc857_bc858_bc859_bc860.pdf Size:35K _diodes 5.10. bc856series_bc857series_bc858series_bc859series_bc860series.pdf Size:140K _infineon  |
 | A 125 180 250
IC = 2 mA, VCE = 5 V, hFE-grp.B 220 290 475
IC = 2 mA, VCE = 5 V, hFE-grp.C 420 520 800
Collector-emitter saturation voltage1) VCEsat mV
IC = 10 mA, IB = 0.5 mA - 75 300
IC = 100 mA, IB = 5 mA - 250 650
Base emitter saturation voltage1) VBEsat
IC = 10 mA, IB = 0.5 mA - 700 -
IC = 100 mA, IB = 0.5 mA - 850 -
Base-emitter voltage1) VBE(ON)
IC = 2 mA, VCE = 5 V 600 650 750
IC = 10 mA, VCE = 5 V - - 820
1
Pulse test: t < 300µs; D < 2%
2007-09-25
4
BC856...-BC860...
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5.11. bc859_bc860.pdf Size:41K _kec D'autres types de transistors... BC860ALT1
, BC860AR
, BC860AW
, BC860AWT1
, BC860B
, BC860BLT1
, BC860BR
, BC860BW
, 2N3866
, BC860C
, BC860CLT1
, BC860CR
, BC860CW
, BC860CWT1
, BC868
, BC869
, BC875
.
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