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BCW60DLT1
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: BCW60DLT1
Matériau utilisé: Si
Polarité du transistor: NPN
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.3
Tension collecteur–base (maximale) Ucb: 32
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 32
Tension émetteur–base (maximale) Ueb: 5
Courant collecteur maximal (Ic): 0.1
Température maximale de jonction (Tj), °C: 150
Fréquence maximale de fonctionnement fT: 125
Capacite collecteur (Cc), pF: 4.5
Gain en courant DC hFE (hfe): 380
Boitier: TO236
Recherche équivalences (un remplaçant pour le transistor BCW60DLT1
) BCW60DLT1
- Fiche technique PDF, Datasheet
5.1. bcw60alt.pdf  Size:425K _motorola  |
 | TY CYCLE = 2%
DUTY CYCLE = 2%
10 k 10 k
0
–0.5 V
<1.0 ns
CS < 4.0 pF* CS < 4.0 pF*
–9.1 V
1N916
<1.0 ns
*Total shunt capacitance of test jig and connectors
Figure 1. Turn–On Time Figure 2. Turn–Off Time
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
BCW60ALT1 BCW60BLT1 BCW60DLT1
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20 100
IC = 1.0 mA
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
50
IC = 1.0 mA
RS ? ?
RS = 0
20
300 µA
300 µA
10
10 100 µA |
5.2. bcw60_3.pdf Size:48K _philips  |
 | ace mounted package; 3 leads SOT23
D B E A
X
HE v M A
3
Q
A
A1
c
12
e1 bp
w M
B Lp
e
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A1
UNIT A bp c D E e e1 HE Lp Q v w
max.
1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm 0.1 1.9 0.95 0.2 0.1
0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45
REFERENCES
EUROPEAN
OUTLINE
ISSUE DATE
PROJECTION
VERSION
IEC JEDEC EIAJ
97-02-28
SOT23
1999 Apr 22 4
Philips Semiconductors Product specification
NPN general purpose tran |
5.3. bcw60.pdf Size:120K _philips  |
 | E
Plastic surface mounted package; 3 leads SOT23
D B E A
X
HE v M A
3
Q
A
A1
c
12
e1 bp
w M
B Lp
e
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A1
UNIT A bp c D E e e1 HE Lp Q v w
max.
1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm 0.1 1.9 0.95 0.2 0.1
0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45
REFERENCES
EUROPEAN
OUTLINE
ISSUE DATE
PROJECTION
VERSION
IEC JEDEC EIAJ
97-02-28
SOT23 TO-236AB
99-09-13
1999 Apr 22 4
NXP Semiconductors Product data she |
5.4. bcw60a_b_c_d.pdf Size:76K _fairchild_semi  |
 | T DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into |
5.5. bcw60_bcx70.pdf Size:282K _siemens  |
 | .65 0.75
1)
IC = 50 mA, VCE = 1 V – 0.78 –
AC characteristics
Transition frequency fT – 250 – MHz
IC = 20 mA, VCE = 5 V, f = 100 MHz
Output capacitance Cobo –3–pF
VCB = 10 V, f = 1 MHz
Input capacitance Cibo –8–
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance h11e k?
IC = 2 mA, VCE = 5 V, f = 1 kHz
BCW 60 A, BCX 70 G – 2.7 –
BCW 60 B, BCX 70 H – 3.6 –
BCW 60 FF, BCW 60 C, BCX 70 J – 4.5 –
BCW 60 FN, BCW 60 D, BCX 70 K – 7.5 –
Open-circuit reverse voltage transfer ratio h12e |
D'autres types de transistors... BCW60
, BCW60A
, BCW60ALT1
, BCW60B
, BCW60BLT1
, BCW60C
, BCW60CLT1
, BCW60D
, 9014
, BCW60FF
, BCW60FN
, BCW60RA
, BCW60RB
, BCW60RC
, BCW60RD
, BCW61
, BCW61ALT1
.
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