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BCW68G
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: BCW68G
Matériau utilisé: Si
Polarité du transistor: PNP
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.35
Tension collecteur–base (maximale) Ucb: 45
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 45
Tension émetteur–base (maximale) Ueb: 5
Courant collecteur maximal (Ic): 0.8
Température maximale de jonction (Tj), °C: 150
Fréquence maximale de fonctionnement fT: 100
Capacite collecteur (Cc), pF: 12
Gain en courant DC hFE (hfe): 160
Boitier: SOT23
Recherche équivalences (un remplaçant pour le transistor BCW68G
) BCW68G
- Fiche technique PDF, Datasheet
1.1. bcw68glt.pdf  Size:82K _motorola  |
 | process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
inches
0.8
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
SOLDERING PRECAUTIONS
pad size. This can vary from the minimum pad size for
The melting temperature of solder is higher than the rated
soldering to a pad size given for maximum power dissipation.
temperature of the device. When the entire device is heated
Power dissipation for a surface mount device is determined
to |
1.2. bcw68g.pdf Size:230K _fairchild_semi  |
 | - 40 °C
- 40 °C
0 0
0.1 0.3 1 3 10 30 100 300
110 100 500
I C
- COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRE NT (mA)
BCW68G
FE
h - TYPICAL PULSED CURRENT GAIN
CESAT
V
- COLLECTOR EMITTER VOLTAGE (V)
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Base-Emitter Saturation Base Emitter ON Voltage vs
Voltage vs Collector Current Collector Current
1
1
- 40 °C
- 40 °C
0.8
0.8
25 °C
0.6
0.6 25 °C
125 °C
0.4
0.4
125 °C
? = 10
V CE = 5V
0. |
1.3. bcw68glt1.pdf Size:108K _onsemi  |
 | ance Cibo - - 105 pF
(VEB= -0.5 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure NF - - 10 dB
(IC= -0.2 mAdc, VCE = -5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
http://onsemi.com
2
BCW68GLT1G
PACKAGE DIMENSIONS
SOT-23 (TO-236)
CASE 318-08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
SEE VIEW C
FINISH THICKNESS. MINIMUM LEAD
3
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. |
1.4. bcw68glt1.pdf Size:292K _willas  |
 | oad (JEDEC method)
OFF CHARACTERISTICS
Typical Thermal Resistance (Note 2) R?JA 40
120
Typical Junction Capacitance (Note 1) CJ
Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0 ) V (BR)CEO – 45 — — Vdc
-55 to +125
-55 to +150
Operating Temperature Range TJ
Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0 ) V (BR)CES – 60 — — Vdc
- 65 to +175
Storage Temperature Range TSTG
Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0) V |
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