BCW69LT1
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: BCW69LT1
Matériau utilisé: Si
Polarité du transistor: PNP
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.3
Tension collecteur–base (maximale) Ucb: 50
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 45
Tension émetteur–base (maximale) Ueb: 5
Courant collecteur maximal (Ic): 0.2
Température maximale de jonction (Tj), °C: 150
Fréquence maximale de fonctionnement fT: 75
Capacite collecteur (Cc), pF: 7
Gain en courant DC hFE (hfe): 120
Boitier: SOT23
Recherche équivalences (un remplaçant pour le transistor BCW69LT1
) BCW69LT1
- Fiche technique PDF, Datasheet
1.1. bcw69lt1_bcw70lt1.pdf  Size:410K _motorola  |
 | 0
5.0 dB
5.0 dB
100 100
10 20 30 50 70 100 200 300 500 700 1.0 k 10 20 30 50 70 100 200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (µA) IC, COLLECTOR CURRENT (µA)
Figure 3. Narrow Band, 100 Hz Figure 4. Narrow Band, 1.0 kHz
1.0 M
500 k 10 Hz to 15.7 kHz
200 k
100 k
Noise Figure is Defined as:
50 k
en2 ) 4KTRS ) In 2RS2 1 2
20 k
NF + 20 log10
4KTRS
10 k
0.5 dB
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
5.0 k
In = Noise Current of the Transistor referr |
5.1. bcw69_bcw70.pdf Size:47K _philips  |
 | .1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm 0.1 1.9 0.95 0.2 0.1
0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45
REFERENCES
EUROPEAN
OUTLINE
ISSUE DATE
PROJECTION
VERSION
IEC JEDEC EIAJ
97-02-28
SOT23
1999 Apr 19 4
Philips Semiconductors Product specification
PNP general purpose transistors BCW69; BCW70
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains prelim |
5.2. bcw69_bcw70_2.pdf Size:113K _philips  |
 | 12
e1 bp
w M
B Lp
e
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A1
UNIT A bp c D E e e1 HE Lp Q v w
max.
1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm 0.1 1.9 0.95 0.2 0.1
0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45
REFERENCES
EUROPEAN
OUTLINE
ISSUE DATE
PROJECTION
VERSION
IEC JEDEC JEITA
04-11-04
SOT23 TO-236AB
06-03-16
2004 Feb 06 4
NXP Semiconductors Product data sheet
PNP general purpose transistors BCW69; BCW70
DATA SHEET STATUS
DOCUMENT PRODUCT
|
5.3. bcw69-bcw70.pdf Size:38K _st  |
 | e without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life supportdevices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan- Kor |
5.4. bcw69_bcw70.pdf Size:97K _diodes 5.5. bcw69_bcw70_bcw89.pdf Size:66K _kec D'autres types de transistors... BCW68
, BCW68F
, BCW68G
, BCW68H
, BCW68RF
, BCW68RG
, BCW68RH
, BCW69
, RCA1001
, BCW69R
, BCW70
, BCW70LT1
, BCW70R
, BCW71
, BCW71R
, BCW72
, BCW72R
.
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