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BD140 - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors

Marquage composant: BD140

Matériau utilisé: Si

Polarité du transistor: PNP

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 12

Tension collecteur–base (maximale) Ucb: 80

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 80

Tension émetteur–base (maximale) Ueb: 5

Courant collecteur maximal (Ic): 1

Température maximale de jonction (Tj), °C: 150

Fréquence maximale de fonctionnement fT: 50

Capacite collecteur (Cc), pF:

Gain en courant DC hFE (hfe): 40

Boitier: TO126

Recherche équivalences (un remplaçant pour le transistor BD140 )

BD140 PDF:

1.1. bd136_bd138_bd140-10.pdf Size:104K _motorola

BD140
BD140

Order this document MOTOROLA by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 Plastic Medium Power Silicon BD140 PNP Transistor BD140-10 . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc 1.5 AMPERE BD 136, 138, 140 are complementary with BD 135, 137, 139 POWER TRANSI

1.2. bd136_bd138_bd140.pdf Size:104K _motorola

BD140
BD140

Order this document MOTOROLA by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 Plastic Medium Power Silicon BD140 PNP Transistor BD140-10 . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc 1.5 AMPERE BD 136, 138, 140 are complementary with BD 135, 137, 139 POWER TRANSI

1.3. bd136_bd138_bd140.pdf Size:49K _philips

BD140
BD140

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 26 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part

1.4. bd136_bd138_bd140.pdf Size:44K _st

BD140
BD140

BD136 BD138/BD140 PNP SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. 1 2 The complementary NPN types are the BD135 3 BD137 and BD139. SOT-32 INTE

1.5. bd135_bd136_bd139_bd140.pdf Size:155K _st

BD140
BD140

BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are pre-selected in DC current gain Application General purpose 1 2 3 Description SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are

1.6. bd136_bd138_bd140.pdf Size:41K _fairchild_semi

BD140
BD140

BD136/138/140 Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 V VCEO Collector-Emitter Voltage : BD136

1.7. bd136_bd138_bd140.pdf Size:175K _cdil

BD140
BD140

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTORS BD136 BD138 BD140 TO126 Plastic Package E C B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD135, BD137, BD139 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD136 BD138 BD140 UNIT Collector -Emitter Voltage VCEO 45 60 80 V Collec

1.8. bd140.pdf Size:31K _kec

BD140
BD140

SEMICONDUCTOR BD140 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A B D C FEATURES E ·High Current. (Max. : -1.5A) F ·DC Current Gain : hFE=40Min. @IC=-0.15A ·Complementary to BD139. G H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 MAXIMUM RATING (Ta=25?) E 3.5 _ + F 11.0 0.3 CHARACTERISTIC SYMBOL RATING UNIT G 2.9 MAX

1.9. bd136_bd138_bd140.pdf Size:119K _inchange_semiconductor

BD140
BD140

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High current Ў¤ Complement to type BD135/137/139 APPLICATIONS Ў¤ Driver stages in high-fidelity amplifiers and television circuits PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD136 BD138 BD140 Ў¤ Absolute maximum ratings (Ta=2

1.10. stbd136t_stbd138t_stbd140t.pdf Size:367K _semtech

BD140
BD140

BD136T / BD138T / BD140T PNP PLASTIC POWER TRANSISTOR Medium power linear and switching applications E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD136T BD138T BD140T -VCBO Collector Base Voltage 45 60 100 V -VCEO Collector Emitter Voltage 45 60 80 V -VEBO Emitter Base Voltage 5 V Collector Current -IC 1.5 A Base Cur

D'autres types de transistors... BD138-10 , BD138-6 , BD138G , BD139 , BD139-10 , BD139-16 , BD139-6 , BD139G , C1815 , BD140-10 , BD140-16 , BD140-6 , BD140G , BD141 , BD142 , BD142-4 , BD142-5 .

 


BD140
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  BD140
  BD140
 
BD140
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INDEX

Répertoire mondial rassemble environ 100 nouvelles references:

BJT INC5006AC1 | INC5004AP1 | INC5004AC1 | INC5003AH1 | INC5002AP1 | INC5001AP1 | INC5001AC1 | NTE219 | NTE159 | NTE157 | NTE154 | NTE153 | NTE152 | NTE130 | NTE13 | NTE129P | NTE128P | INC6008AP1 | INC6008AC1 | INC6007AP1 |

Les mots de moins de 2 lettres (chiffres) sont ignorés lors de la recherché