BDX87
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: BDX87
Matériau utilisé: Si
Polarité du transistor: NPN
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 117
Tension collecteur–base (maximale) Ucb: 45
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 45
Tension émetteur–base (maximale) Ueb: 5
Courant collecteur maximal (Ic): 12
Température maximale de jonction (Tj), °C: 200
Fréquence maximale de fonctionnement fT: 25
Capacite collecteur (Cc), pF:
Gain en courant DC hFE (hfe): 750
Boitier: TO3
Recherche équivalences (un remplaçant pour le transistor BDX87
) BDX87
PDF doc:
1.1. bdx87-88.pdf  Size:70K _st  |
 | BDX87C
BDX88C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The BDX87C is a silicon epitaxial-base NPN
power transistors in monolithic Darlington
configuration and are mounted in Jedec TO-3
metal case. They are intented for use in power
linear and switching applications.
1
The complementary PNP types is the BDX88C.
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
R Typ. = 6 K ? R Typ. = 55 ?
1 2
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDX87C
PNP BDX88C
VCBO Collector-base Voltage (IE = 0) 100 V
VCEO Collector-emitter Voltage (IB = 0) 100 V
VEBO Emitter-base Voltage (IC = 0) 5 V
IC Collector Current 12 A
I Collector Peak Current (repetitive) 18 A
CM
IB Base Current 0.2 A
Ptot Total Dissipation at Tc ? 25 oC 120 W
o
Tstg Storage Temperature -65 to 200 C
o
Tj Max. Operating Junction Temperature 200 C
1/4
June 1997
BDX87C-BDX88C
THERMAL DATA
o
Rthj-case Thermal Resistance Junction-case Max 1.45 C |
1.2. bdx87_a_b_c.pdf Size:214K _inchange_semiconductor  |
 | INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor BDX87/A/B/C
DESCRIPTION
·High DC Current Gain-
: hFE= 750(Min)@ IC= 6A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A
80V(Min)- BDX87B; 100V(Min)- BDX87C
·Complement to Type BDX88/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
BDX87 45
BDX87A 60
VCBO Collector-Base Voltage V
BDX87B 80
BDX87C 100
BDX87 45
BDX87A 60
VCEO Collector-Emitter Voltage V
BDX87B 80
BDX87C 100
VEBO Emitter-Base Voltage 5 V
IC Collector Current-Continuous 12 A
ICM Collector Current-Peak 18 A
IBB Base Current 200 mA
Collector Power Dissipation
PC @ TC=25? 120 W
TJ Junction Temperature 200 ?
Storage Temperature Range -65~200 ?
Tstg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
Thermal Resistance,Junction to Case 1.45 ?/W |
1.3. bdx87c.pdf Size:117K _inchange_semiconductor  |
 | Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BDX87C
DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type BDX88C Ў¤ DARLINGTON APPLICATIONS Ў¤ Designed for use in power linear and switching application.
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=25Ўж )
SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg
PARAMETER
Collector-base voltage Collector-emitter voltage
HAN INC
Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation
SEM GE
TC=25Ўж
Open emitter
Open base
OND IC
CONDITIONS
TOR UC
VALUE 100 100 5 12 18 0.2 120 200 -65~200 Ўж Ўж
UNIT V V V A A A W
Open collector
Max. operating Junction temperature Storage temperature
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.45 UNIT Ўж /W
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D'autres types de transistors... BDX85
, BDX85A
, BDX85B
, BDX85C
, BDX86
, BDX86A
, BDX86B
, BDX86C
, AD161
, BDX87A
, BDX87B
, BDX87C
, BDX88
, BDX88A
, BDX88B
, BDX88C
, BDX91
.
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