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BF721
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: BF721
Matériau utilisé: Si
Polarité du transistor: PNP
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 1.5
Tension collecteur–base (maximale) Ucb: 300
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 0
Tension émetteur–base (maximale) Ueb: 5
Courant collecteur maximal (Ic): 0.05
Température maximale de jonction (Tj), °C: 150
Fréquence maximale de fonctionnement fT: 60
Capacite collecteur (Cc), pF:
Gain en courant DC hFE (hfe): 50
Boitier: SP0
Recherche équivalences (un remplaçant pour le transistor BF721
) BF721
- Fiche technique PDF, Datasheet
1.1. bf721t1r.pdf  Size:75K _motorola  |
 | ent; and the operating temperature, TA.
The 83.3°C/W for the SOT-223 package assumes the
Using the values provided on the data sheet for the SOT-223
recommended collector pad area of 965 sq. mils on a glass
package, PD can be calculated as follows.
epoxy printed circuit board to achieve a power dissipation of
1.5 watts. If space is at a premium, a more realistic
TJ(max) – TA
PD =
approach is to use the device at a PD of 833 mW using the
R?JA
footprint shown. Using a board material suc |
1.2. bf721_bf723.pdf Size:35K _philips  |
 | mA; IB = -5mA - -0.6 V
Cre feedback capacitance IC =ic = 0; VCE = -30 V; f = 1 MHz - 2.5 pF
fT transition frequency IC = -10 mA; VCE = -10 V; f = 100 MHz 60 - MHz
1996 Dec 05 3
Philips Semiconductors Product specification
PNP high-voltage transistors BF721; BF723
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
D B E A X
c
y
HE v M A
b1
4
Q
A
A1
13 Lp
2
e1 bp w M B detail X
e
0 2 4 mm
scale
DIMENSIONS (mm are the origi |
1.3. bf721.pdf Size:45K _st  |
 | logo is a trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
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1.4. bf721.pdf Size:35K _diodes 1.5. bf721t1-d.pdf Size:127K _onsemi  |
 | 50
Cib @1MHz
130
110
10
90
Ccb @1MHz
70
1.0
50
TJ =25?C
VCE =20 Vdc
30
F=20 MHz
0.1
10
0.1 1.0 10 100 1000
1 3 5 7 9 11 13 15 17 19 21
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 2. Capacitance
Figure 3. Current--Gain — Bandwidth
1.4
1.2
VCE(sat) @25?C, IC/IB =10
VCE(sat) @ 125?C, IC/IB =10
1.0
VCE(sat) @--55?C, IC/IB =10
VBE(sat) @25?C, IC/IB =10
0.8
VBE(sat) @ 125?C, IC/IB =10
VBE(sat) @--55?C, IC/IB =10
0.6
VBE(on) @25?C, VCE =10 V
0.4
VBE( |
D'autres types de transistors... BF716EA
, BF717
, BF717BA
, BF717EA
, BF718
, BF718BA
, BF718EA
, BF720
, BC109
, BF721T1
, BF721T3
, BF722
, BF722T1
, BF722T3
, BF723
, BF723T1
, BF723T3
.
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