BU2508D
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: BU2508D
Matériau utilisé: Si
Polarité du transistor: NPN
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 125
Tension collecteur–base (maximale) Ucb: 1500
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 700
Tension émetteur–base (maximale) Ueb: 5
Courant collecteur maximal (Ic): 8
Température maximale de jonction (Tj), °C: 150
Fréquence maximale de fonctionnement fT:
Capacite collecteur (Cc), pF: 90
Gain en courant DC hFE (hfe): 7
Boitier: TO218
Recherche équivalences (un remplaçant pour le transistor BU2508D
) BU2508D
- Fiche technique PDF, Datasheet
1.1. bu2508d_1.pdf  Size:51K _philips  |
 | CS
Tmb = 25 ?C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 80 - pF
Switching times (16 kHz line ICM = 4.5 A; IB(end) = 1.1 A; LB = 6 µH;
deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs)
ts Turn-off storage time 5.0 6.0 µs
tf Turn-off fall time 0.4 0.6 µs
Switching times (38 kHz line ICM = 4.0 A; IB(end) = 0.9 A; LB = 6 µH;
deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs)
ts Turn-off storage time |
1.2. bu2508dx.pdf Size:73K _philips  |
 | tor-emitter saturation voltages IC = 4.5 A; IB = 1.12 A - - 1.0 V
VBEsat Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A - - 1.1 V
hFE DC current gain IC = 1 A; VCE = 5 V - 13 -
hFE IC = 4.5 A; VCE = 1 V 4 5.5 7.0
VF Diode forward voltage IF = 4.5 A - 1.6 2.0 V
DYNAMIC CHARACTERISTICS
Ths = 25 ?C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 80 - pF
Switching times (16 kHz line ICsat = 4.5 A; IB(end) |
1.3. bu2508dw.pdf Size:54K _philips  |
 | 0 A; VCB = 10 V; f = 1 MHz 80 - pF
Switching times (16 kHz line ICsat = 4.5 A; IB(end) = 1.1 A; LB = 6 µH;
deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs)
ts Turn-off storage time 5.0 6.0 µs
tf Turn-off fall time 0.4 0.6 µs
Switching times (38 kHz line ICsat = 4.0 A; IB(end) = 0.9 A; LB = 6 µH;
deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs)
ts Turn-off storage time 4.7 5.7 µs
tf Turn-off fall time 0.25 0.35 µs
ICsat ICsat
TRANSISTOR
90 %
IC DIODE
t
IC
IBend
IB
10 %
|
1.4. bu2508df.pdf Size:72K _philips  |
 | er sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltages IC = 4.5 A; IB = 1.1 A - - 5.0 V
VCEsat IC = 4.5 A; IB = 1.29 A - - 1.0 V
VBEsat Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A - - 1.3 V
hFE DC current gain IC = 1 A; VCE = 5 V 7 13 23
hFE IC = 4.5 A; VCE = 1 V 4 5.5 7.5
VF Diode forward voltage IF = 4.5 A - 1.6 2.0 V
DYNAMIC CHARACTERISTICS
Ths = 25 ?C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. U |
1.5. bu2508d.pdf Size:139K _inchange_semiconductor 1.6. bu2508dx.pdf Size:104K _inchange_semiconductor 1.7. bu2508dw.pdf Size:137K _inchange_semiconductor 1.8. bu2508df.pdf Size:192K _inchange_semiconductor D'autres types de transistors... BU225
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