BU508AT
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: BU508AT
Matériau utilisé: Si
Polarité du transistor: NPN
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 34
Tension collecteur–base (maximale) Ucb: 1500
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 700
Tension émetteur–base (maximale) Ueb: 0
Courant collecteur maximal (Ic): 8
Température maximale de jonction (Tj), °C: 150
Fréquence maximale de fonctionnement fT: 3
Capacite collecteur (Cc), pF: 125
Gain en courant DC hFE (hfe): 5
Boitier: ISO218
Recherche équivalences (un remplaçant pour le transistor BU508AT
) BU508AT
- Fiche technique PDF, Datasheet
4.1. bu508ax.pdf  Size:50K _philips  |
 | circuit) IB(end) = 1.4 A; LB = 6 µH; -VBB = -4 V;
-IBM = 2.25 A
ts Turn-off storage time 6.5 - µs
tf Turn-off fall time 0.7 - µs
1 Measured with half sine-wave voltage (curve tracer).
July 1998 2 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508AX
ICsat
+ 50v
90 %
100-200R
IC
10 %
Horizontal
tf
t
Oscilloscope ts
IB
IBend
Vertical
t
1R
100R
6V
30-60 Hz
- IBM
Fig.1. Test circuit for VCEOsust. Fig.4. Switching times definiti |
4.2. bu508af_2.pdf Size:48K _philips  |
 | circuit) IB(end) = 1.4 A; LB = 6 µH; -VBB = -4 V;
-IBM = 2.25 A
ts Turn-off storage time 6.5 - µs
tf Turn-off fall time 0.7 - µs
1 Measured with half sine-wave voltage (curve tracer).
July 1998 2 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508AF
ICsat
+ 50v
90 %
100-200R
IC
10 %
Horizontal
tf
t
Oscilloscope ts
IB
IBend
Vertical
t
1R
100R
6V
30-60 Hz
- IBM
Fig.1. Test circuit for VCEOsust. Fig.4. Switching times definiti |
4.3. bu508aw.pdf Size:61K _philips  |
 | uctors Product specification
Silicon Diffused Power Transistor BU508AW
ICsat hFE
BU508AD
TRANSISTOR
100
IC DIODE
t
IBend
IB
10
t
20us 26us
64us
VCE
1
0.1 1 10
t IC/A
Fig.3. Switching times waveforms. Fig.6. Typical DC current gain. hFE = f (IC)
parameter VCE
ICsat
VCESAT / V BU508AD
1
90 %
0.9
IC 0.8
0.7
0.6
10 %
0.5
tf
t
ts
0.4
IB
IBend
0.3
0.2
t
0.1
0
0.1 1 10
- IBM IC / A
Fig.4. Switching times definitions. Fig.7. Typical collector-emitter saturati |
4.4. bu208a_bu508a_bu508afi.pdf Size:245K _st  |
 | 0 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
A D
P
G C
R
P003F
5/8
E
U
V
B
N
O
Obsolete Product(s) - Obsolete Product(s)
BU208A / BU508A / BU508AFI
TO-218 (SOT-93) MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598
L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220
R |
4.5. bu208a_bu508a.pdf Size:236K _st  |
 | CAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598
L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220
R – 12.2 – 0.480
O 4 4.1 0.157 0.161
L6
L5
L3
L2
?
R
1 2 3
P025A
6/8
E
A
C
D
G
H
F
BU208A / BU508A / BU508AFI
ISOWATT218 MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 |
4.6. bu508aw.pdf Size:216K _st  |
 |
4/11
BU508AW Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4. DC current gain Figure 5. DC current gain
Figure 6. Collector-emitter saturation Figure 7. Base-emitter saturation
voltage voltage
5/11
Electrical characteristics BU508AW
Figure 8. Output characteristics
6/11
BU508AW Electrical characteristics
2.2 Test circuits
Figure 9. Power losses and inductive load switching
Figure 10. Reverse |
4.7. bu508af.pdf Size:216K _st  |
 | 7V fh = 16KHz
2.5 µs
tf Fall time 0.2 µs
LBB(off) = 4.5µH
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
4/11
BU508AF Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4. DC current gain Figure 5. DC current gain
Figure 6. Collector-emitter saturation Figure 7. Base-emitter saturation
voltage voltage
5/11
Electrical characteristics BU508AF
Figure 8. Output characteristics
6/11
BU508AF Elec |
4.8. bu508a.pdf Size:91K _st  |
 |
R
1 2 3
P025A
6/8
E
A
C
D
G
H
F
BU208A/508A/508AFI
ISOWATT218 MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.210 0.222
C 3.3 3.8 0.130 0.149
D 2.9 3.1 0.114 0.122
D1 1.88 2.08 0.074 0.081
E 0.75 1 0.029 0.039
F 1.05 1.25 0.041 0.049
G 10.8 11.2 0.425 0.441
H 15.8 16.2 0.622 0.637
L1 20.8 21.2 0.818 0.834
L2 19.1 19.9 0.752 0.783
L3 22.8 23.6 0.897 0.929
L4 40.5 42.5 1.594 1.673
L5 4.85 5.25 0.190 0.206
L6 20.25 20.75 0.797 0.817
M 3.5 3. |
4.9. bu508af.pdf Size:47K _fairchild_semi 4.10. bu508a-m.pdf Size:87K _inchange_semiconductor 4.11. bu508ax.pdf Size:116K _inchange_semiconductor 4.12. bu508aw.pdf Size:117K _inchange_semiconductor 4.13. bu508af.pdf Size:122K _inchange_semiconductor 4.14. bu508afi.pdf Size:118K _inchange_semiconductor 4.15. bu508a.pdf Size:121K _inchange_semiconductor D'autres types de transistors... BU506
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