DTB113EK - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: DTB113EK

Matériau utilisé: Si

Polarité du transistor: PNP

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.2

Tension collecteur–base (maximale) Ucb: 50

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 0

Tension émetteur–base (maximale) Ueb: 0

Courant collecteur maximal (Ic): 0.5

Température maximale de jonction (Tj), °C: 150

Fréquence maximale de fonctionnement fT: 140

Capacite collecteur (Cc), pF:

Gain en courant DC hFE (hfe): 33

Boitier: SOT223

Recherche équivalences (un remplaçant pour le transistor DTB113EK )

DTB113EK - Fiche technique PDF, Datasheet

1.1. dtb113ek.pdf Size:135K _rohm

RRENT GAIN : G I INPUT VOLTAGE : V I(on) ( V) OUTPUT CURRENT : Io ( A) OUTPUT VOLTAGE : V O (on) ( V ) Notice Not es No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to re

4.1. dtb113zk.pdf Size:156K _rohm

URRENT GAIN : G I OUTPUT CURRENT : Io ( A) INPUT VOLTAGE : V I (on) ( V ) OUTPUT VOLTAGE : V O (on) ( V) Notice Not es No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to

5.1. pdtb114et_4.pdf Size:49K _motorola

0 mV Vi(on) input-on voltage IC = -10 mA; VCE = -300 mV -3 - - V R1 input resistor 7 10 13 k? R2 ------- resistor ratio 0.8 1 1.2 - R1 Cc collector capacitance IE =ie = 0; VCB = -10 V; f = 1 MHz - - 9 pF Note 1. Pulse test: tp ? 300 µs; ? ? 0.02. 1997 Sep 02 4 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D B E A X HE v M A 3 Q A A1 c 12 e1 bp w M B Lp e detail

5.2. pdtb114et_p09_ sot23.pdf Size:26K _motorola

0 mV Vi(on) input-on voltage IC = -10 mA; VCE = -300 mV -3 - - V R1 input resistor 7 10 13 k? R2 ------- resistor ratio 0.8 1 1.2 - R1 Cc collector capacitance IE =ie = 0; VCB = -10 V; f = 1 MHz - - 9 pF Note 1. Pulse test: tp ? 300 µs; ? ? 0.02. 1997 Sep 02 4

5.3. pdtb114et_4.pdf Size:49K _philips

0 mV Vi(on) input-on voltage IC = -10 mA; VCE = -300 mV -3 - - V R1 input resistor 7 10 13 k? R2 ------- resistor ratio 0.8 1 1.2 - R1 Cc collector capacitance IE =ie = 0; VCB = -10 V; f = 1 MHz - - 9 pF Note 1. Pulse test: tp ? 300 µs; ? ? 0.02. 1997 Sep 02 4 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D B E A X HE v M A 3 Q A A1 c 12 e1 bp w M B Lp e detail

5.4. dtb114ek.pdf Size:356K _rohm

5 ?0.2mA 2 0A 0 1 0-5 -10 -500µ -1m -2m -5m -10m -20m -50m-100m -200m -500m OUTPUT VOLTAGE : VO [V] OUTPUT CURRENT : IO [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2012.02 - Rev.C 3/5 O I(on) OUTPUT CURRENT : I [A] INPUT VOLTAGE : V [V] I O DC CURRENT GAIN : G OUTPUT CURRENT : I [mA] Data Sheet DTB114EK ?Electrical characteristic curves(Ta = 25°C) Fig.5 Output voltage vs. output current -1 lO/lI = 20 -500m Ta=100oC 25oC -200m -40oC -100m -50m

5.5. dtb114gk.pdf Size:77K _rohm

ications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

5.6. dtb114tk.pdf Size:60K _rohm

equest that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for su

D'autres types de transistors... DTA144TUA , DTA144VKA , DTA144VSA , DTA144VUA , DTA144WEA , DTA144WKA , DTA144WSA , DTA144WUA , BC337 , DTB113ES , DTB114EK , DTB114ES , DTB123EK , DTB123ES , DTB143EC , DTB143EK , DTB143ES .