Tous les transistors


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Index
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BU104
BU104D .. BU921ZP
BU921ZPFI .. BUP49
BUP50 .. BUW131
BUW131A .. BUY30
BUY32-100 .. CCS2008GF
CCS2053 .. CG040D
CG040E .. CK477
CK4A .. CP500
CP501 .. CSA1316GR
CSA1357 .. CSC1740
CSC1740S .. CSD786Q
CSD786R .. D26E1
D26E2 .. D40N2
D40N3 .. D60T4040
D60T4050 .. DSL12AW
DSS20200L .. DTA143ZE
DTA143ZEA .. DTD123YK
DTD143E .. ECG16
ECG160 .. ECG52
ECG53 .. ESM4007
ESM400A .. FCX1051A
FCX1053A .. FJY4004R
FJY4005R .. FMMT918R
FMMT929 .. FX3502
FX3503 .. GD110
GD114 .. GES5818
GES5819 .. GS111B
GS111C .. GT376A
GT383A .. HE9015
HEP637 .. HS5819
HS5820 .. IDI8003
IDI8004 .. JE9112A
JE9112B .. KRA105M
KRA105S .. KRA769E
KRA769U .. KRC841E
KRC841T .. KSB1116A-Y
KSB1116S .. KSC2883-O
KSC2883-Y .. KSD5076
KSD5078 .. KSY82
KT104A .. KT325BM
KT325V .. KT617A
KT618A .. KT8154A
KT8154B .. KT903B
KT904A .. KTB688B
KTB764 .. KTD8303A9
KTD863 .. MCH3105
MCH3106 .. MJ10100
MJ10101 .. MJD44H11-1
MJD44H11T4 .. MJE5982
MJE5983 .. MMBC1009F1
MMBC1009F2 .. MMBT6428
MMBT6428L .. MP115
MP116 .. MP5130
MP5131 .. MPS3391
MPS3391A .. MPSH24
MPSH30 .. MRF947AT3
MRF947BT1 .. NA12FG
NA12FH .. NB013HU
NB013HV .. NB212XH
NB212XI .. NKT13429
NKT135 .. NPS5449
NPS5550 .. NTE22
NTE226 .. OC822
OC823 .. PBSS5320T
PBSS5320X .. PMBT2369
PMBT2907 .. PRF949
PRF957 .. RCA1A18
RCA1A19 .. RN1701JE
RN1702 .. RN2901FS
RN2902 .. S17900
S1805 .. SDT9305
SDT9306 .. SJ5439
SJE1349 .. SRA2219S
SRA2219SF .. STC5608
STC5648 .. SZD4672
SZD5103 .. TA2514
TA2551 .. TIP146
TIP146F .. TIS53
TIS54 .. TN4142
TN4143 .. TPC6602
TPC6603 .. UN1115S
UN1116Q .. UN921M
UNR1110 .. ZT61
ZT62 .. ZTX453
ZTX454 .. ZXTPS718MC
ZXTPS720MC .. ZXTPS720MC
 
Le transistor bipolaire. Répertoire mondial des transistors. Les principales caractéristique des transistors bipolaires
 

F5 - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: F5

Matériau utilisé: Si

Polarité du transistor: NPN

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.15

Tension collecteur–base (maximale) Ucb: 50

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 25

Tension émetteur–base (maximale) Ueb: 0

Courant collecteur maximal (Ic): 0.05

Température maximale de jonction (Tj), °C: 125

Fréquence maximale de fonctionnement fT: 250

Capacite collecteur (Cc), pF: 2.5

Gain en courant DC hFE (hfe): 135

Boitier:

Recherche équivalences (un remplaçant pour le transistor F5 )

F5 PDF doc:

1.1. mmdf5n02zrev1.pdf Size:186K _motorola

F5
F5
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF5N02Z/D Designer's? Data Sheet MMDF5N02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD DUAL TMOS Protected Gate POWER MOSFET 5.0 AMPERES EZFETs? are an advanced series of power MOSFETs which 20 VOLTS utilize Motorolas High Cell Density HDTMOS process and contain RDS(on) = 0.040 OHM monolithic backtoback zener diodes. These zener diodes ? provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. D EZFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Zener Protected Gates Provide Electrostatic Discharge Protection CASE 751

1.2. mrf5015r.pdf Size:138K _motorola

F5
F5
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor NChannel EnhancementMode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for largesignal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment. Guaranteed Performance at 512 MHz, 12.5 Volts 15 W, 512 MHz, 12.5 VOLTS Output Power 15 Watts NCHANNEL BROADBAND Power Gain 10 dB Min RF POWER FET Efficiency 50% Min Characterized with Series Equivalent LargeSignal Impedance Parameters SParameter Characterization at High Bias Levels Excellent Thermal Stability All Gold Metal for Ultra Reliability Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 319

1.3. mrf5007rev2.pdf Size:161K _motorola

F5
F5
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 NChannel EnhancementMode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for largesignal, common source NCHANNEL amplifier applications in 7.5 Volt portable FM equipment. BROADBAND Guaranteed Performance at 512 MHz, 7.5 Volts RF POWER FET Output Power = 7.0 Watts Power Gain = 10 dB Min Efficiency = 50% Min Characterized with Series Equivalent LargeSignal Impedance Parameters SParameter Characterization at High Bias Levels Excellent Thermal Stability All Gold Metal for Ultra Reliability Capable of Handling 20:1 VSWR, @ 10 Vdc, 512 MHz, 2.0 dB Overdrive True Surface Mount Package Available in Tape and Reel by Adding R1 Suffix to Part Number. R1 Suffix =

1.4. mmbf5457lt1rev0d.pdf Size:103K _motorola

F5
F5
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF5457LT1/D JFET General Purpose MMBF5457LT1 Transistor NChannel 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 31808, STYLE 10 SOT23 (TO236AB) DrainSource Voltage VDS 25 Vdc DrainGate Voltage VDG 25 Vdc Reverse GateSource Voltage VGS(r) 25 Vdc Gate Current IG 10 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board(1) PD 225 mW TA = 25C Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING MMBF5457LT1 = 6D ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 25 Vdc (IG = 10 Adc, VDS = 0) Gate Reverse Current IGSS nAdc (VGS = 15 Vdc, VDS = 0) 1.0 (VGS = 15 Vdc, VDS = 0, TA = 100C) 200 Gate S

1.5. mrf5811l.pdf Size:155K _motorola

F5
F5
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5811LT1/D The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor Designed for high current, low power amplifiers up to 1.0 GHz. IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISE HIGHFREQUENCY Low Intermodulation Distortion TRANSISTOR High Gain NPN SILICON StateoftheArt Technology Fine Line Geometry Arsenic Emitters Gold Top Metallization Nichrome ThinFilm Ballasting Resistors Excellent Dynamic Range Fully Characterized High CurrentGain Bandwidth Product Available in Tape and Reel by Adding T1 Suffix to Part Number. T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel. CASE 318A05, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 18 Vdc CollectorBase Voltage VCBO 36 Vdc EmitterBase Voltage VEBO 2.5 Vdc Collector Current Continuous IC 200 mAdc Thermal Resistance ?JC (1) R?JC 106 C/W Total Device Dissipation @ TC = 75C PD 0.71 Watts

1.6. mmsf5p02hd.pdf Size:213K _motorola

F5
F5
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5P02HD/D Designer's? Data Sheet MMSF5P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS? devices are an advanced series of power MOSFETs 8.7 AMPERES which utilize Motorolas High Cell Density HDTMOS process. These 20 VOLTS miniature surface mount MOSFETs feature ultra low RDS(on) and true RDS(on) = 0.03 OHM logic level performance. They are capable of withstanding high energy in ? the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as D computers, printers, cellular and cordless phones. They can also be used for low vol

1.7. mrf581re.pdf Size:222K _motorola

F5
F5
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF581/D The RF Line MRF581 NPN Silicon MRF581A High-Frequency Transistors MRF5812, R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation Distortion IC = 200 mA High Gain LOW NOISE StateoftheArt Technology HIGHFREQUENCY Fine Line Geometry TRANSISTORS Arsenic Emitters NPN SILICON Gold Top Metallization Nichrome ThinFilm Ballasting Resistors Excellent Dynamic Range Fully Characterized High CurrentGain Bandwidth Product MRF5812 available in tape and reel packaging by adding suffix: CASE 31701, STYLE 2 R1 suffix = 500 units per reel MRF581,A R2 suffix = 2,500 units per reel CASE 75105, STYLE 1 SORF (SO8) MRF5812 MAXIMUM RATINGS Rating Symbol MRF581 MRF581A MRF5812 Unit CollectorEmitter Voltage VCEO 18 15 15 Vdc CollectorBase Voltage VCBO 36 30 30 Vdc EmitterBase Voltage VEBO 2.5 Vdc Collector Current

1.8. mmbr571lt1_mps571_mrf571_mrf5711lt1.pdf Size:358K _motorola

F5
F5
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR571LT1/D The RF Line MMBR571LT1 NPN Silicon MPS571 MRF571 High-Frequency Transistors MRF5711LT1 Designed for low noise, wide dynamic range frontend amplifiers and lownoise VCOs. Available in a surfacemountable plastic package, as well as the popular TO226AA (TO92) package. This Motorola series of smallsignal plastic transistors offers superior quality and performance at low cost. IC = 80 mA High GainBandwidth Product LOW NOISE fT = 8.0 GHz (Typ) @ 50 mA HIGHFREQUENCY TRANSISTORS Low Noise Figure NFmin = 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571) High Gain GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1) High Power Gain Gpe (matched) = 13.5 dB (Typ) (MRF5711LT1) StateoftheArt Technology Fine Line Geometry CASE 31808, STYLE 6 IonImplanted Arsenic Emitters SOT23 Gold Top Metallization and Wires LOW PROFILE Silicon Nitride Passivation MMBR571LT1 Available in tap

1.9. mtdf5n02z.pdf Size:276K _motorola

F5
F5
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF5N02Z/D Advance Information MMDF5N02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD DUAL TMOS Protected Gate POWER MOSFET EZFETs? are an advanced series of power MOSFETs which 5.0 AMPERES utilize Motorolas High Cell Density HDTMOS process and contain 20 VOLTS monolithic backtoback zener diodes. These zener diodes RDS(on) = 0.040 OHM provide protection against ESD and unexpected transients. These ? miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. D EZFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Zener Protected Gates Provide Electrostatic Discharge Protection CASE 7510

1.10. mrf5007r.pdf Size:158K _motorola

F5
F5
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor NChannel EnhancementMode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for largesignal, common source NCHANNEL amplifier applications in 7.5 Volt portable FM equipment. BROADBAND Guaranteed Performance at 512 MHz, 7.5 Volts RF POWER FET Output Power = 7.0 Watts Power Gain = 10 dB Min Efficiency = 50% Min Characterized with Series Equivalent LargeSignal Impedance Parameters SParameter Characterization at High Bias Levels Excellent Thermal Stability All Gold Metal for Ultra Reliability Capable of Handling 20:1 VSWR, @ 10 Vdc, 512 MHz, 2.0 dB Overdrive True Surface Mount Package Available in Tape and Reel by Adding R1 Suffix to Part Number. R1 Suffix = 500 Units

1.11. mrf5015rev6d.pdf Size:154K _motorola

F5
F5
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor NChannel EnhancementMode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for largesignal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment. Guaranteed Performance at 512 MHz, 12.5 Volts 15 W, 512 MHz, 12.5 VOLTS Output Power 15 Watts NCHANNEL BROADBAND Power Gain 10 dB Min RF POWER FET Efficiency 50% Min Characterized with Series Equivalent LargeSignal Impedance Parameters SParameter Characterization at High Bias Levels Excellent Thermal Stability All Gold Metal for Ultra Reliability Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 319

1.12. irf530.rev1.1.pdf Size:166K _motorola

F5
F5
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF530/D Product Preview IRF530 TMOS E-FET.? Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 14 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a draintosource diode with a fast RDS(on) = 0.140 W recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor ? controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified D SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature

1.13. mrf555re.pdf Size:99K _motorola

F5
F5
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF555/D The RF Line NPN Silicon MRF555 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) 1.5 W, 470 MHz Efficiency 60% (Typ) RF LOW POWER Cost Effective PowerMacro Package TRANSISTOR Electroless Tin Plated Leads for Improved Solderability NPN SILICON Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 16 Vdc CollectorBase Voltage VCBO 36 Vdc EmitterBase Voltage VEBO 4.0 Vdc Collector Current Continuous IC 400 mAdc Operating Junction Temperature TJ 150 C Total Device Dissipation @ TC = 75C (1, 2) PD 3.0 Watts Derate above 75C 40 mW/C CASE 317D02, STYLE 2 Storage Temperature Range Tstg 55 to +150 C

1.14. mrf5583r.pdf Size:67K _motorola

F5
F5
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5583/D The RF Line PNP Silicon MRF5583 High-Frequency Transistor . . . designed for amplifier, oscillator or frequency multiplier applications in industrial equipment. Suitable for use as a Class A, B or C output driver or predriver stages in VHF and UHF. Low Cost SORF Plastic Surface Mount Package IC = 500 mA Guaranteed RF Specification |S21|2 SURFACE MOUNT HIGHFREQUENCY SParameter Characterization TRANSISTOR Tape and Reel Packaging Options Available by adding suffix: PNP SILICON R1 suffix = 500 units per reel R2 suffix = 2,500 units per reel MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 30 V CollectorBase Voltage VCBO 30 V EmitterBase Voltage VEBO 3.0 V Collector Current Continuous IC 500 mA Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range CASE 75105, STYLE 1 DEVICE MARKING (SO8) MRF5583 = 5583 THERMAL CHARACTERISTI

1.15. mmbr521lt1_mrf5211lt1.pdf Size:151K _motorola

F5
F5
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR521LT1/D The RF Line PNP Silicon MMBR521LT1 High-Frequency Transistor MRF5211LT1 Designed primarily for use in the highgain, lownoise smallsignal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times. High Current GainBandwidth Product IC = 70 mA fT = 3.4 GHz (Typ) @ IC = 35 mAdc (MMBR521LT1) HIGHFREQUENCY fT = 4.2 GHz (Typ) @ IC = 50 mAdc (MRF5211LT1) TRANSISTOR Low Noise Figure @ f = 1.0 GHz PNP SILICON NF(matched) = 2.5 dB (Typ) (MMBR521LT1) NF(matched) = 2.8 dB (Typ) (MRF5211LT1) High Power Gain Gpe (matched) = 11 dB (Typ) Guaranteed RF Parameters Surface Mounted SOT23 (MMBR521LT1) & SOT143 (MRF5211LT1) Offer Improved RF Performance Lower Package Parasitics Higher Gain CASE 31808, STYLE 6 Available in tape and reel packaging options: SOT23 LOW PROFILE T1 suffix = 3,000 units per reel (TO236AA/AB) MMBR521LT1 MA

1.16. mmdf5n02z.pdf Size:191K _motorola

F5
F5
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF5N02Z/D Designer's? Data Sheet MMDF5N02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD DUAL TMOS Protected Gate POWER MOSFET 5.0 AMPERES EZFETs? are an advanced series of power MOSFETs which 20 VOLTS utilize Motorolas High Cell Density HDTMOS process and contain RDS(on) = 0.040 OHM monolithic backtoback zener diodes. These zener diodes ? provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. D EZFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Zener Protected Gates Provide Electrostatic Discharge Protection CASE 751

1.17. mmbf5484lt1rev0d.pdf Size:294K _motorola

F5
F5
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF5484LT1/D JFET Transistor NChannel MMBF5484LT1 2 SOURCE Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 DrainGate Voltage VDG 25 Vdc Reverse GateSource Voltage VGS(r) 25 Vdc CASE 31808, STYLE 10 Forward Gate Current IG(f) 10 mAdc SOT23 (TO236AB) Continuous Device Dissipation at or Below PD TC = 25C 200 mW Linear Derating Factor 2.8 mW/C Storage Channel Temperature Range Tstg 65 to +150 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board(1) PD 225 mW TA = 25C Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING MMBF5484LT1 = 6B ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 25 Vdc (IG

1.18. mrf5035r.pdf Size:142K _motorola

F5
F5
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5035/D The RF MOSFET Line RF Power Field Effect Transistor NChannel EnhancementMode MRF5035 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for largesignal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment. Guaranteed Performance at 512 MHz, 12.5 Volt 35 W, 12.5 VOLTS, 512 MHz Output Power 35 Watts NCHANNEL BROADBAND Power Gain 6.5 dB Min RF POWER FET Efficiency 50% Min Characterized with Series Equivalent LargeSignal Impedance Parameters SParameter Characterization at High Bias Levels Excellent Thermal Stability All Gold Metal for Ultra Reliability Capable of Handling 20:1 Load VSWR, @ 15.5 Volt, 512 MHz, 2 dB Overdrive Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. C

1.19. mrf587re.pdf Size:155K _motorola

F5
F5
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF587/D The RF Line NPN Silicon MRF587 High-Frequency Transistor . . . designed for use in highgain, lownoise, ultralinear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. Low Noise Figure NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA NF = 3.0 dB @ 0.5 GHz High Power Gain HIGHFREQUENCY GU(max) = 16.5 dB (Typ) @ f = 500 MHz TRANSISTOR Ion Implanted NPN SILICON All Gold Metal System High fT 5.5 GHz Low Intermodulation Distortion: TB3 = 70 dB DIN = 125 dB V Nichrome Emitter Ballast Resistors MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 17 Vdc CollectorBase Voltage VCBO 34 Vdc EmitterBase Voltage VEBO 2.5 Vdc Collector Current Continuous IC 200 mAdc Total Device Dissipation @ TC = 50C PD 5.0 Watts Derate above TC = 50C 33 mW/C Storage Temperature Range Tstg 65 to +150 C CASE 244A01, STYLE 1

1.20. mrf557re.pdf Size:91K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF557/D The RF Line NPN Silicon MRF557 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W 1.5 W, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSISTOR Cost Effective PowerMacro Package NPN SILICON Electroless Tin Plated Leads for Improved Solderability Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 16 Vdc CollectorBase Voltage VCBO 36 Vdc EmitterBase Voltage VEBO 4.0 Vdc Collector Current Continuous IC 400 mAdc Total Device Dissipation @ TC = 75C (1, 2) PD 3.0 Watts Derate above 75C 40 mW/C CASE 317D02, STYLE 2 Storage Temperature Range Tstg 55 to +150 C THERMAL CHARACTERISTICS Characteristic Symbol M

1.21. mmsf5n03z.pdf Size:282K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5N03Z/D Advance Information MMSF5N03Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel with Monolithic Zener ESD SINGLE TMOS Protected Gate POWER MOSFET EZFETs? are an advanced series of power MOSFETs which utilize 5.0 AMPERES Motorolas High Cell Density TMOS process and contain monolithic 30 VOLTS backtoback zener diodes. These zener diodes provide protection RDS(on) = 0.030 OHM against ESD and unexpected transients. These miniature surface ? mount MOSFETs feature ultra low RDS(on) amd true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. EZFET devices are designed D for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in por

1.22. mrf5943r.pdf Size:69K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5943/D The RF Line NPN Silicon MRF5943, R1, R2 High-Frequency Transistor . . . designed for amplifier, oscillator or frequency multiplier applications in industrial equipment. Suitable for use as a Class A, B or C output driver or predriver stages in VHF and UHF. Low Cost SORF Plastic Surface Mount Package IC = 400 mA SURFACE MOUNT Guaranteed RF Specification |S21|2 HIGHFREQUENCY SParameter Characterization TRANSISTOR Tape and Reel Packaging Options Available by adding suffix: NPN SILICON R1 suffix = 500 units per reel R2 suffix = 2,500 units per reel MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 30 Vdc CollectorBase Voltage VCBO 40 Vdc EmitterBase Voltage VEBO 3.5 Vdc Collector Current Continuous IC 400 mAdc Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range DEVICE MARKING CASE 75105, STYLE 1 (SO8) MRF5943 = 5943 THERMAL C

1.23. mmsf5n03hdrev5.pdf Size:294K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5N03HD/D Designer's? Data Sheet MMSF5N03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS? devices are an advanced series of power MOSFETs 5.0 AMPERES which utilize Motorolas High Cell Density HDTMOS process. 30 VOLTS These miniature surface mount MOSFETs feature ultra low RDS(on) RDS(on) = 0.040 OHM and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the ? draintosource diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in D portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for CAS

1.24. mmsf5n02hdrev5.pdf Size:293K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5N02HD/D Designer's? Data Sheet MMSF5N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS? devices are an advanced series of power MOSFETs 5.0 AMPERES which utilize Motorolas High Cell Density HDTMOS process. 20 VOLTS These miniature surface mount MOSFETs feature ultra low RDS(on) RDS(on) = 0.025 OHM and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the ? draintosource diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in D portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for CAS

1.25. mrf559re.pdf Size:157K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF559/D The RF Line NPN Silicon MRF559 High-Frequency Transistor . . . designed for UHF linear and largesignal amplifier applications. Specified 12.5 Volt, 870 MHz Characteristics Output Power = 0.5 Watts Minimum Gain = 8.0 dB 0.5 W, 870 MHz Efficiency 50% HIGHFREQUENCY S Parameter Data From 250 MHz to 1.5 GHz TRANSISTOR 1.0 dB Compression > +20 dBm Typ NPN SILICON Ideally Suited for Broadband, Class A, LowNoise Applications Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 16 Vdc CollectorBase Voltage VCBO 36 Vdc EmitterBase Voltage VEBO 3.0 Vdc Collector Current Continuous IC 150 mAdc Total Device Dissipation @ TC = 50C PD 2.0 Watts Derate above 50C 20 mW/C Storage Temperature Range Tstg 65 to +150 C CASE 31701, STYLE 2 ELECTRICAL CHARACTERISTICS (

1.26. irf540_mot.pdf Size:144K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Advance Information IRF540 TMOS E-FET.? Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a draintosource diode with a fast RDS(on) = 0.077 OHMS recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, PWM motor controls, ? these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage tran- sients. Avalanche Energy Specified D SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperat

1.27. mrf5003r.pdf Size:206K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5003/D The RF MOSFET Line RF Power Field Effect Transistor NChannel EnhancementMode MRF5003 The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for largesignal, common source amplifier applications in 7.5 Volt and 12.5 Volt mobile, portable, and base station FM equipment. 3.0 W, 7.5 V, 512 MHz Guaranteed Performance at 512 MHz, 7.5 Volts NCHANNEL Output Power = 3.0 Watts BROADBAND RF POWER FET Power Gain = 9.5 dB Efficiency = 45% Characterized with Series Equivalent LargeSignal Impedance Parameters SParameter Characterization at High Bias Levels Excellent Thermal Stability All Gold Metal for Ultra Reliability Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2.0 dB Overdrive Suitable for 12.5 Volt Applications True Surface Mount Package Available in Ta

1.28. mmsf5p02hdrev2.pdf Size:208K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5P02HD/D Designer's? Data Sheet MMSF5P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS? devices are an advanced series of power MOSFETs 8.7 AMPERES which utilize Motorolas High Cell Density HDTMOS process. These 20 VOLTS miniature surface mount MOSFETs feature ultra low RDS(on) and true RDS(on) = 0.03 OHM logic level performance. They are capable of withstanding high energy in ? the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as D computers, printers, cellular and cordless phones. They can also be used for low vol

1.29. mmsf5n02hd.pdf Size:252K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5N02HD/D Designer's? Data Sheet MMSF5N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS? devices are an advanced series of power MOSFETs 5.0 AMPERES which utilize Motorolas High Cell Density HDTMOS process. 20 VOLTS These miniature surface mount MOSFETs feature ultra low RDS(on) RDS(on) = 0.025 OHM and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the ? draintosource diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in D portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for CAS

1.30. mrf553re.pdf Size:94K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF553/D The RF Line NPN Silicon MRF553 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W 1.5 W, 175 MHz Minimum Gain = 11.5 dB RF LOW POWER Efficiency 60% (Typ) TRANSISTOR Cost Effective PowerMacro Package NPN SILICON Electroless Tin Plated Leads for Improved Solderability Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 16 Vdc CollectorBase Voltage VCBO 36 Vdc EmitterBase Voltage VEBO 4.0 Vdc Collector Current Continuous IC 500 mAdc Total Device Dissipation @ TC = 75C (1, 2) PD 3.0 Watts Derate above 75C 40 mW/C CASE 317D02, STYLE 2 Storage Temperature Range Tstg 55 to +150 C THERMAL CHARACTERISTICS Characteristic Symbol Max

1.31. irf540.rev3.2.pdf Size:142K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Product Preview IRF540 TMOS E-FET.? Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a draintosource diode with a fast RDS(on) = 0.070 OHMS recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor ? controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified D SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperatur

1.32. irf530_mot.pdf Size:173K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF530/D Advance Information IRF530 TMOS E-FET.? Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 14 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a draintosource diode with a fast RDS(on) = 0.16 W recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, PWM motor controls, ? these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage tran- sients. Avalanche Energy Specified D SourcetoDrain Diode Recovery Time Comparable to a Dis- crete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperatur

1.33. mmsf5n03hd.pdf Size:253K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5N03HD/D Designer's? Data Sheet MMSF5N03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS? devices are an advanced series of power MOSFETs 5.0 AMPERES which utilize Motorolas High Cell Density HDTMOS process. 30 VOLTS These miniature surface mount MOSFETs feature ultra low RDS(on) RDS(on) = 0.040 OHM and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the ? draintosource diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in D portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for CAS

1.34. bf585_bf587.pdf Size:48K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF585; BF587 NPN high-voltage transistors 1999 Apr 21 Product specification Supersedes data of 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors BF585; BF587 FEATURES Low feedback capacitance. handbook, halfpage APPLICATIONS For use in video output stages of black and white and colour television receivers. 2 3 DESCRIPTION 1 NPN transistors in a TO-202; SOT128B plastic package. PNP complement: BF588. PINNING 1 2 3 MBH793 PIN DESCRIPTION 1 emitter Fig.1 Simplified outline (TO-202; SOT128B) 2 collector and symbol. 3 base LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF585 - 350 V BF587 - 400 V VCEO collector-emitter voltage open base BF585 - 300 V BF587 - 350 V VEBO emitter-base voltage open collector - 5V IC collector current (DC

1.35. blf544_cnv_2.pdf Size:94K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF544 UHF power MOS transistor 1998 Jan 21 Product specification Supersedes data of October 1992 Philips Semiconductors Product specification UHF power MOS transistor BLF544 FEATURES PINNING - SOT171A High power gain PIN SYMBOL DESCRIPTION Easy power control 1 s source Good thermal stability 2 s source Gold metallization ensures excellent reliability 3 g gate Designed for broadband operation. 4 d drain 5 s source APPLICATIONS 6 s source Communication transmitters in the UHF frequency range. 2 4 6 handbook, halfpage DESCRIPTION d N-channel enhancement mode vertical D-MOS power g s transistor encapsulated in a 6-lead, SOT171A flange 1 3 5 package with a ceramic cap. All leads are isolated from the Top view MAM390 flange. A marking code showing gate-source voltage (VGS) information is provided for matched pair applications. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performan

1.36. bf556a_bf556b_bf556c.pdf Size:71K _philips

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BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 03 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features Low leakage level (typ. 500 fA) High gain Low cut-off voltage. 1.3 Applications Impedance converters in e.g. electret microphones and infrared detectors VHF amplifiers in oscillators and mixers. 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source - - 30 V voltage (DC) VGSoff gate-source cut-off ID = 200 A; -0.5 - -7.5 V voltage VDS =15V IDSS drain current VGS =0V; VDS =15V BF556A 3 - 7 mA BF556B 6 - 13 mA BF556C 11 - 18 mA Ptot total power Tamb ? 25 C - - 250 mW dissipation ?yfs? forward transfer V

1.37. bf591_bf593.pdf Size:49K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF591; BF593 NPN high-voltage transistors 1997 Jul 02 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors BF591; BF593 FEATURES PINNING Low current (max. 150 mA) PIN DESCRIPTION High voltage (max. 210 V). 1 emitter 2 collector, connected to mounting base APPLICATIONS 3 base Telephone systems. handbook, halfpage DESCRIPTION NPN high-voltage transistor in a TO-202; SOT128B plastic 2 package. 3 1 1 2 3 MAM305 Fig.1 Simplified outline (TO-202; SOT128B) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF591 - 210 V BF593 - 250 V VCEO collector-emitter voltage open base BF591 - 170 V BF593 - 210 V ICM peak collector current - 300 mA Ptot total power dissipation Tamb ? 55 C - 1.3 W hFE DC current gain IC = 20 mA; VCE =5

1.38. bf547.pdf Size:109K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION Feedback capacitance typ. 1 pF Low cost NPN transistor in a plastic SOT23 package. Stable oscillator operation High current gain Good thermal stability. handbook, 2 columns 21 APPLICATIONS It is intended for VHF and UHF TV-tuner applications and can be used as a mixer and/or oscillator. 3 PINNING MSB003 Top view PIN DESCRIPTION Marking code: E16. 1 base 2 emitter Fig.1 SOT23. 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCEO collector-emitter voltage open base - 20 V VCBO collector-base voltage open emitter - 30 V VEBO emitter-base voltage open collector - 3 V ICM peak collector current - 50 mA Ptot total power dissipation up to Ts =70 C; note 1 - 300 mW fT tran

1.39. bf588.pdf Size:63K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF588 PNP high-voltage transistor 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistor BF588 FEATURES Low feedback capacitance. handbook, halfpage APPLICATIONS For use in video output stages of black and white and colour television receivers. 2 DESCRIPTION 3 PNP transistor in a TO-202 plastic package. 1 PINNING PIN DESCRIPTION 1 2 3 MBH792 1 emitter 2 collector Fig.1 Simplified outline (TO-202) and symbol. 3 base QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --350 V VCEO collector-emitter voltage open base --350 V ICM peak collector current --100 mA Ptot total power dissipation free air - 1.6 W hFE DC current gain IC = -25 mA; VCE = -20 V 50 - Cre feedback capacitance IC =ic = 0; VCE = -30 V; f = 1 MHz - 2.2 pF fT trans

1.40. bf510_bf511_bf512_bf513.pdf Size:234K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 DESCRIPTION MARKING CODE Asymmetrical N-channel planar BF510 = S6p epitaxial junction field-effect BF511 = S7p transistors in the miniature plastic BF512 = S8p envelope intended for applications up BF513 = S9p to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios 3 handbook, halfpage (BF511) and mains radios (BF512) or the mixer stage (BF513). d g s PINNING - SOT23 12 1 = gate Top view MAM385 2 = drain 3 = source Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Drain-source voltage VDS max. 20 V Dra

1.41. blf545.pdf Size:75K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BLF545 UHF push-pull power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability handbook, halfpage 1 4 d Designed for broadband operation. g s g DESCRIPTION 5 d 2 3 Silicon N-channel enhancement Top view mode vertical D-MOS push-pull MAM395 transistor designed for communications transmitter applications in the UHF frequency range. Fig.1 Simplified outline and symbol. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The CAUTION mounting flange provides the The device is supplied in an antistatic package. The gate-source input must common source connection for the be protected against static charge during transport and handling. transist

1.42. blf578.pdf Size:320K _philips

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BLF578 Power LDMOS transistor Rev. 02 4 February 2010 Product data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Application information Mode of operation f VDS PL Gp ?D (MHz) (V) (W) (dB) (%) CW 108 50 1000 26 75 pulsed RF 225 50 1200 24 71 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 ?s with ? of 20 %: Output power = 1200 W Power gain = 24 dB Efficiency = 71 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (10 MHz to 500 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3

1.43. blf573_blf573s.pdf Size:331K _philips

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BLF573; BLF573S HF / VHF power LDMOS transistor Rev. 3 8 July 2010 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation f VDS PL Gp ?D (MHz) (V) (W) (dB) (%) CW 225 50 300 27.2 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: Average output power = 300 W Power gain = 27.2 dB Efficiency = 70 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF and VHF band) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3

1.44. blf546_cnv_2.pdf Size:72K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BLF546 UHF push-pull power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability handbook, halfpage 1 4 d Designed for broadband operation. g s g DESCRIPTION 5 d 2 3 Silicon N-channel enhancement Top view mode vertical D-MOS push-pull MAM395 transistor designed for communications transmitter applications in the UHF frequency range. Fig.1 Simplified outline and symbol. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The CAUTION mounting flange provides the The device is supplied in an antistatic package. The gate-source input must common source connection for the be protected against static charge during transport and handling. transist

1.45. bf547_2.pdf Size:76K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION Feedback capacitance typ. 1 pF Low cost NPN transistor in a plastic SOT23 package. Stable oscillator operation High current gain Good thermal stability. handbook, halfpage 3 APPLICATIONS It is intended for VHF and UHF TV-tuner applications and can be used as a mixer and/or oscillator. 12 Top view MSB003 PINNING PIN DESCRIPTION Marking code: E16. 1 base 2 emitter Fig.1 SOT23. 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCEO collector-emitter voltage open base - 20 V VCBO collector-base voltage open emitter - 30 V VEBO emitter-base voltage open collector - 3 V ICM peak collector current - 50 mA Ptot total power dissipation up to Ts =70 C; note 1 - 300 mW fT transit

1.46. blf544.pdf Size:96K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF544 UHF power MOS transistor Product specification 2003 Sep 18 Supersedes data of 1998 Jan 21 Philips Semiconductors Product specification UHF power MOS transistor BLF544 FEATURES PINNING - SOT171A High power gain PIN DESCRIPTION Easy power control 1 source Good thermal stability 2 source Gold metallization ensures excellent reliability 3 gate Designed for broadband operation. 4 drain 5 source APPLICATIONS 6 source Communication transmitters in the UHF frequency range. 2 4 6 handbook, halfpage DESCRIPTION d N-channel enhancement mode vertical D-MOS power g s transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the 1 3 5 Top view MAM390 flange. A marking code showing gate-source voltage (VGS) information is provided for matched pair applications. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th =25 C in a c

1.47. blf547.pdf Size:94K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BLF547 UHF push-pull power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability 1 2 halfpage d2 Designed for broadband operation. g2 s g1 DESCRIPTION d1 55 Dual push-pull silicon N-channel 3 4 enhancement mode vertical D-MOS MSB008 Top view MBB157 transistor designed for communications transmitter applications in the UHF frequency range. Fig.1 Simplified outline and symbol. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange envelope, with two ceramic caps. The CAUTION mounting flange provides the The device is supplied in an antistatic package. The gate-source input must common source connection for the be protected against static charge during transport and handling.

1.48. blf544b_cnv_2.pdf Size:75K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BLF544B UHF push-pull power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF544B FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures lfpage excellent reliability 24 d2 Designed for broadband operation. g2 s g1 5 DESCRIPTION 13 d1 Silicon N-channel enhancement MBB930 Top view MBB157 mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. Fig.1 Simplified outline and symbol. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The CAUTION mounting flange provides the The device is supplied in an antistatic package. The gate-source input must common source connection for the be protected against static charge during transport and handling. transisto

1.49. bf583_bf585_bf587.pdf Size:63K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF583; BF585; BF587 NPN high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors BF583; BF585; BF587 FEATURES Low feedback capacitance. handbook, halfpage APPLICATIONS For use in video output stages of black and white and colour television receivers. 2 DESCRIPTION 3 NPN transistors in a TO-202 plastic package. 1 PINNING PIN DESCRIPTION 1 2 3 MBH793 1 emitter 2 collector Fig.1 Simplified outline (TO-202) and symbol. 3 base QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF583 - 300 V BF585 - 350 V BF587 - 400 V VCEO collector-emitter voltage open base BF583 - 250 V BF585 - 300 V BF587 - 350 V ICM peak collector current - 100 mA Ptot total power dissipation in free air; Tamb ? 25 C - 1.6 W hFE DC

1.50. blf571.pdf Size:105K _philips

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BLF571 HF / VHF power LDMOS transistor Rev. 02 24 February 2009 Product data sheet 1. Product profile 1.1 General description A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band. Table 1. Production test performance Mode of operation f VDS PL Gp ?D (MHz) (V) (W) (dB) (%) CW 225 50 20 27.5 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 50 mA: Average output power = 20 W Power gain = 27.5 dB Efficiency = 70 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (10 MHz to 500 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical appli

1.51. bf547w.pdf Size:67K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BF547W NPN 1 GHz wideband transistor June 1994 Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547W FEATURES DESCRIPTION handbook, 2 columns 3 Stable oscillator operation Silicon NPN transistor in a plastic SOT323 (S-mini) package. The High current gain BF547W uses the same crystal as the Good thermal stability. SOT23 version, BF547. APPLICATIONS PINNING 12 It is primarily intended as a mixer, PIN DESCRIPTION MBC870 oscillator and IF amplifier in UHF and Top view VHF tuners. 1 base Marking code: E2. 2 emitter Fig.1 SOT323 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter - - 30 V VCEO collector-emitter voltage open base - - 20 V IC collector current (DC) - - 50 mA Ptot total power dissipation

1.52. bf545a_bf545b_bf545c_2.pdf Size:69K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF545A; BF545B; BF545C field-effect transistors FEATURES Low leakage level (typ. 500 fA) High gain Low cut-off voltage (max. 2.2 V for BF545A). handbook, halfpage 21 APPLICATIONS Impedance converters in e.g. electret microphones and d g infra-red detectors s VHF amplifiers in oscillators and mixers. 3 DESCRIPTION Top view MAM036 N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. PINNING - SOT23 Marking codes: BF545A: M65. PIN SYMBOL DESCRIPTION BF545B: M66. BF545C: M67. 1 s source 2 d drain Fig.1 Simplified outline and symbol. 3 g gate QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source volt

1.53. bf570.pdf Size:105K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BF570 NPN medium frequency transistor Product data sheet 2004 Mar 15 Supersedes data of 2004 Jan 13 NXP Semiconductors Product data sheet NPN medium frequency transistor BF570 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 15 V) 1 base Low feedback capacitance (max. 2.2 pF). 2 emitter 3 collector APPLICATIONS Monitors Battery equipped applications. handbook, halfpage 3 DESCRIPTION 3 NPN transistor in a SOT23 plastic package. 1 MARKING 2 1 2 TYPE NUMBER MARKING CODE(1) BF570 61* or B26 Top view MAM255 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. * = W : Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BF570 - plastic surface mounted package; 3 leads SOT23 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 40 V VCEO

1.54. bf550_3.pdf Size:46K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF550 PNP medium frequency transistor 1999 Apr 15 Product specification Supersedes data of 1997 Jul 07 Philips Semiconductors Product specification PNP medium frequency transistor BF550 FEATURES PINNING Low current (max. 25 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Medium frequency applications in thick and thin film circuits. DESCRIPTION handbook, halfpage 3 PNP medium frequency transistor in a SOT23 plastic 3 package. 1 MARKING 2 1 2 TYPE NUMBER MARKING CODE(1) BF550 LA? Top view MAM256 Note 1. ? = p : Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --40 V VCEO collector-emitter voltage open base --40 V VEBO emitter-base voltage open

1.55. blf548.pdf Size:116K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF548 UHF push-pull power MOS transistor Product specification 2003 Sep 26 Supersedes data of Oct 1992 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability 1 2 Gold metallization ensures halfpage d2 excellent reliability g2 Designed for broadband operation. s g1 d1 55 DESCRIPTION 3 4 MSB008 Top view MBB157 Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency Fig.1 Simplified outline and symbol. range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange CAUTION package, with two ceramic caps. The This product is supplied in anti-static packing to prevent damage caused by mounting flange provides the electrostatic discharge during transport and handling. For further

1.56. bf556a_bf556b_bf556c_2.pdf Size:68K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF556A; BF556B; BF556C field-effect transistors FEATURES Low leakage level (typ. 500 fA) handbook, halfpage 21 High gain Low cut-off voltage. d g s APPLICATIONS Impedance converters in e.g. electret microphones and 3 infra-red detectors Top view MAM036 VHF amplifiers in oscillators and mixers. Marking codes: DESCRIPTION BF556A: M84. BF556B: M85. N-channel symmetrical silicon junction field-effect BF556C: M86. transistors in a SOT23 package. Fig.1 Simplified outline and symbol. PINNING - SOT23 PIN SYMBOL DESCRIPTION CAUTION 1 s source The device is supplied in an antistatic package. The 2 d drain gate-source input must be protected against static disch

1.57. blf574.pdf Size:171K _philips

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BLF574 HF / VHF power LDMOS transistor Rev. 02 24 February 2009 Product data sheet 1. Product profile 1.1 General description A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Application information Mode of operation f VDS PL Gp ?D (MHz) (V) (W) (dB) (%) CW 225 50 500 26.5 70 108 50 600 27.5 73 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 1000 mA: Average output power = 500 W Power gain = 26.5 dB Efficiency = 70 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (10 MHz to 500 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Indu

1.58. blf521_cnv_4.pdf Size:71K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BLF521 UHF power MOS transistor November 1992 Product specification Philips Semiconductors Product specification UHF power MOS transistor BLF521 FEATURES PIN CONFIGURATION High power gain ook, halfpage 1 Easy power control Gold metallization Good thermal stability d 2 3 Withstands full load mismatch g Designed for broadband operation. s MBB072 4 DESCRIPTION MSB007 Top view Silicon N-channel enhancement mode vertical D-MOS transistor Fig.1 Simplified outline and symbol. designed for communications transmitter applications in the UHF frequency range. CAUTION The transistor is encapsulated in a The device is supplied in an antistatic package. The gate-source input must 4-lead, SOT172D studless envelope, be protected against static charge during transport and handling. with a ceramic cap. All leads are isolated from the mounting base. WARNING PINNING - SOT172D Product and environmental safety - toxic ma

1.59. bf545a_bf545b_bf545c.pdf Size:71K _philips

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BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 03 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features Low leakage level (typ. 500 fA) High gain Low cut-off voltage (max. 2.2 V for BF545A). 1.3 Applications Impedance converters in e.g. electret microphones and infra-red detectors VHF amplifiers in oscillators and mixers. 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage - - 30 V VGSoff gate-source cut-off ID =1A; VDS =15V -0.4 - -7.8 V voltage IDSS drain current VGS =0V; VDS =15V BF545A 2 - 6.5 mA BF545B 6 - 15 mA BF545C 12 - 25 mA Ptot total power dissipation Tamb ? 25 C - - 250 mW ?yfs? fo

1.60. bf510_bf511_bf512_bf513_cnv_2.pdf Size:34K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors December 1997 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 DESCRIPTION MARKING CODE Asymmetrical N-channel planar BF510 = S6p epitaxial junction field-effect BF511 = S7p transistors in the miniature plastic BF512 = S8p envelope intended for applications up BF513 = S9p to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios 3 handbook, halfpage (BF511) and mains radios (BF512) or the mixer stage (BF513). d g s PINNING - SOT23 12 1 = gate Top view MAM385 2 = drain 3 = source Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Drain-s

1.61. bf556a.pdf Size:100K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF556A; BF556B; BF556C field-effect transistors FEATURES Low leakage level (typ. 500 fA) handbook, halfpage 21 High gain Low cut-off voltage. d g s APPLICATIONS Impedance converters in e.g. electret microphones and 3 infra-red detectors Top view MAM036 VHF amplifiers in oscillators and mixers. Marking codes: DESCRIPTION BF556A: M84. BF556B: M85. N-channel symmetrical silicon junction field-effect BF556C: M86. transistors in a SOT23 package. Fig.1 Simplified outline and symbol. PINNING - SOT23 PIN SYMBOL DESCRIPTION CAUTION 1 s source The device is supplied in an antistatic package. The 2 d drain gate-source input must be protected against static disch

1.62. bf570_cnv_2.pdf Size:49K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BF570 NPN medium frequency transistor 1997 Mar 04 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium frequency transistor BF570 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 15 V) 1 base Low feedback capacitance (max. 2.2 pF). 2 emitter 3 collector APPLICATIONS Monitors Battery equipped applications. handbook, halfpage 3 3 DESCRIPTION 1 NPN transistor in a SOT23 plastic package. 2 MARKING 1 2 Top view TYPE NUMBER MARKING CODE MAM255 BF570 B26 Fig.1 Simplified outline (SOT23) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 40 V VCEO collector-emitter voltage open base - 15 V ICM peak collector current - 200 mA Ptot total power dissipation Tamb ? 25 C - 250 mW hFE DC current gain IC

1.63. blf521.pdf Size:85K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET M3D079 BLF521 UHF power MOS transistor Product specification 2003 Sep 02 Supersedes data of 1998 Jan 07 Philips Semiconductors Product specification UHF power MOS transistor BLF521 FEATURES PIN CONFIGURATION High power gain ook, halfpage Easy power control 1 Gold metallization Good thermal stability d 2 3 Withstands full load mismatch g Designed for broadband operation. s MBB072 4 DESCRIPTION MSB007 Top view Silicon N-channel enhancement mode vertical D-MOS transistor Fig.1 Simplified outline and symbol. designed for communications transmitter applications in the UHF frequency range. CAUTION The transistor is encapsulated in a This product is supplied in anti-static packing to prevent damage caused by 4-lead, SOT172D studless package, electrostatic discharge during transport and handling. For further information, with a ceramic cap. All leads are refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and

1.64. blf548_cnv_3.pdf Size:93K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BLF548 UHF push-pull power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability 1 2 halfpage d2 Designed for broadband operation. g2 s g1 DESCRIPTION d1 55 Dual push-pull silicon N-channel 3 4 enhancement mode vertical D-MOS MSB008 Top view MBB157 transistor designed for communications transmitter applications in the UHF frequency range. Fig.1 Simplified outline and symbol. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange envelope, with two ceramic caps. The CAUTION mounting flange provides the The device is supplied in an antistatic package. The gate-source input must common source connection for the be protected against static charge during transport and handling.

1.65. bf588_3.pdf Size:48K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF588 PNP high-voltage transistor 1999 Apr 12 Product specification Supersedes data of 1996 Dec 09 Philips Semiconductors Product specification PNP high-voltage transistor BF588 FEATURES Low feedback capacitance. handbook, halfpage APPLICATIONS For use in video output stages of black and white and 2 colour television receivers. 3 DESCRIPTION PNP transistor in a TO-202 plastic package. 1 NPN complements: BF585 and BF587. PINNING 1 2 3 MBH792 PIN DESCRIPTION 1 emitter 2 collector Fig.1 Simplified outline (TO-202) and symbol. 3 base LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --350 V VCEO collector-emitter voltage open base --350 V VEBO emitter-base voltage open collector --5V IC collector current (DC) --100 mA ICM peak collector current --200 mA IBM peak base curren

1.66. blf543.pdf Size:76K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BLF543 UHF power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF power MOS transistor BLF543 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability fpage Gold metallization ensures excellent reliability Designed for broadband operation. 1 2 d DESCRIPTION 3 4 g 5 6 Silicon N-channel enhancement s MBB072 mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. Top view MBA931 - 1 The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with Fig.1 Simplified outline and symbol. a ceramic cap. All leads are isolated from the flange. The devices are marked with a CAUTION VGS indication intended for matched pair applications. The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handlin

1.67. blf573s.pdf Size:85K _philips

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BLF573S HF / VHF power LDMOS transistor Rev. 02 17 February 2009 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation f VDS PL Gp ?D (MHz) (V) (W) (dB) (%) CW 225 50 300 27.2 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: Average output power = 300 W Power gain = 27.2 dB Efficiency = 70 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF and VHF band) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Indu

1.68. bf545a.pdf Size:100K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF545A; BF545B; BF545C field-effect transistors FEATURES Low leakage level (typ. 500 fA) High gain Low cut-off voltage (max. 2.2 V for BF545A). handbook, halfpage 21 APPLICATIONS Impedance converters in e.g. electret microphones and d g infra-red detectors s VHF amplifiers in oscillators and mixers. 3 DESCRIPTION Top view MAM036 N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. PINNING - SOT23 Marking codes: BF545A: M65. PIN SYMBOL DESCRIPTION BF545B: M66. BF545C: M67. 1 s source 2 d drain Fig.1 Simplified outline and symbol. 3 g gate QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source volt

1.69. irf530n_1.pdf Size:98K _philips

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Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF530N FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 17 A g RDS(ON) ? 110 m? s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel enhancement mode PIN DESCRIPTION tab field-effect power transistor in a drain plastic envelope using trench 1 gate technology. 2 drain Applications:- d.c. to d.c. converters 3 source switched mode power supplies 1 2 3 gate source tab drain drain The IRF530N is supplied in the SOT78 (TO220AB) conventional leaded package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source voltage Tj = 25 ?C to 175?C - 100 V VDGR Drain-gate voltage Tj = 25 ?C to 175?C; RGS = 20 k? - 100 V VGS Gate-source voltage - 20 V ID Continuous drain current Tmb = 25 ?C;

1.70. irf540_s_1.pdf Size:88K _philips

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Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF540, IRF540S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 23 A g RDS(ON) ? 77 m? s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using trench technology. Applications:- d.c. to d.c. converters switched mode power supplies T.V. and computer monitor power supplies The IRF540 is supplied in the SOT78 (TO220AB) conventional leaded package. The IRF540S is supplied in the SOT404 (D2PAK) surface mounting package. PINNING SOT78 (TO220AB) SOT404 (D2PAK) PIN DESCRIPTION tab tab 1 gate 2 drain1 3 source 2 tab drain 1 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source voltage Tj = 25 ?C to 175?C - 100 V VDGR Drain-gate

1.71. blf542_cnv_2.pdf Size:80K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF power MOS transistor BLF542 FEATURES PIN CONFIGURATION High power gain halfpage Easy power control Gold metallization Good thermal stability 1 2 Withstands full load mismatch d 3 4 Designed for broadband operation. 5 6 g s MBB072 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor Top view MBA931 - 1 designed for large signal amplifier applications in the UHF frequency Fig.1 Simplified outline and symbol. range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated CAUTION from the flange. The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. PINNING - SOT171 WARNING PIN DESCRIPTION Product and environmental safety - toxi

1.72. blf522.pdf Size:71K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BLF522 UHF power MOS transistor September 1992 Product specification Philips Semiconductors Product specification UHF power MOS transistor BLF522 FEATURES PIN CONFIGURATION High power gain Easy power control halfpage Gold metallization Good thermal stability d Withstands full load mismatch 1 2 Designed for broadband operation. 3 4 g 5 s 6 MBB072 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications Top view MBA931 - 1 transmitter applications in the UHF frequency range. Fig.1 Simplified outline and symbol. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated CAUTION from the flange. The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. PINNING - SOT171 WARNING PIN DESCRIPTION Product and environmental safety - t

1.73. blf542.pdf Size:104K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF542 UHF power MOS transistor Product specification 2003 Sep 18 Supersedes data of 1998 Jan 08 Philips Semiconductors Product specification UHF power MOS transistor BLF542 FEATURES PINNING - SOT171A High power gain PIN DESCRIPTION Easy power control 1 source Good thermal stability 2 source Gold metallization ensures excellent reliability 3 gate Withstands full load mismatch 4 drain Designed for broadband operation. 5 source 6 source APPLICATIONS Large signal amplifier applications in the UHF frequency range. 2 4 6 handbook, halfpage d DESCRIPTION g s N-channel enhancement mode vertical D-MOS power 1 3 5 transistor encapsulated in a 6-lead, SOT171A flange Top view MAM390 package with a ceramic cap. All leads are isolated from the flange. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th =25 C in a common source class-B circuit. f VDS PL Gp ?D MODE OF OPERATIO

1.74. bf550.pdf Size:94K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BF550 PNP medium frequency transistor Product data sheet 2004 Jan 16 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet PNP medium frequency transistor BF550 FEATURES PINNING Low current (max. 25 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Medium frequency applications in thick and thin film circuits. DESCRIPTION handbook, halfpage 3 PNP medium frequency transistor in a SOT23 plastic 3 package. 1 MARKING 2 1 2 TYPE NUMBER MARKING CODE(1) BF550 LA* Top view MAM256 Note 1. * = p : Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. * = t : Made in Malaysia. * = W : Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BF550 - plastic surface mounted package; 3 leads SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V

1.75. blf546.pdf Size:91K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET M3D092 BLF546 UHF push-pull power MOS transistor Product specification 2003 Sep 22 Supersedes data of 1998 Jan 09 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability handbook, halfpage 1 4 d Designed for broadband operation. g s g 5 DESCRIPTION d 2 3 Silicon N-channel enhancement Top view MAM395 mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. Fig.1 Simplified outline and symbol. The transistor is encapsulated in a 4-lead, SOT268A balanced flange package, with two ceramic caps. The CAUTION mounting flange provides the This product is supplied in anti-static packing to prevent damage caused by common source connection for the electrostatic discharge during transp

1.76. pmbf5484_pmbf5485_pmbf5486_cnv_2.pdf Size:72K _philips2

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DISCRETE SEMICONDUCTORS DATA SHEET PMBF5484; PMBF5485; PMBF5486 N-channel field-effect transistors April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBF5484; N-channel field-effect transistors PMBF5485; PMBF5486 FEATURES Low noise Interchangeability of drain and source connections High gain. 3 handbook, halfpage DESCRIPTION d g N-channel, symmetrical, silicon s junction FETs in a surface-mountable 12 SOT23 envelope. Intended for use in VHF/UHF amplifiers, oscillators and Top view MAM385 mixers. PINNING - SOT23 PIN DESCRIPTION Fig.1 Simplified outline and symbol. 1 source 2 drain 3 gate QUICK REFERENCE DATA MARKING CODES: SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PMBF5484: p6B VDS drain-source - 25 V voltage PMBF5485: p6M IDSS drain current VDS = 15 V; VGS = 0 PMBF5486: p6H PMBF5484 1 5 mA PMBF5485 4 10 mA PMBF5486 8 20 mA Ptot total power up to Tamb = 25 C - 250

1.77. stb150nf55_stp150nf55_stw150nf55.pdf Size:564K _st

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STB150NF55 STP150NF55 - STW150NF55 N-channel 55V - 0.005? - 120A - D2PAK/TO-220/TO-247 STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB150NF55 55V <0.006? 120A(1) 3 1 STP150NF55 55V <0.006? 120A(1) 3 2 1 STW150NF55 55V <0.006? 120A(1) D2PAK TO-220 1. Current limited by package 100% avalanche tested Description TO-247 This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on- Internal schematic diagram resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications Switching application Order codes Sales type Marking Package Packaging STB150NF55T4 B150NF55 D2PAK Tape & reel STP150NF55 P150NF55 TO-220 Tube STW150NF55 W150NF55 TO-247 Tube June 2006 Rev 3 1/19 www.st.com 19 Contents STB150NF55 - STP150NF55 - STW150N

1.78. stl140n4llf5.pdf Size:239K _st

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STL140N4LLF5 N-channel 40 V, 0.00275 ?, 32 A, PowerFLAT (5x6) STripFET V Power MOSFET Preliminary data Features RDS(on) Type VDSS ID max STL140N4LLF5 40 V 0.00275 ? 32 A (1) 1. The value is rated according Rthj-pcb. RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) PowerFLAT ( 5x6 ) High avalanche ruggedness Low gate drive power losses Application Switching applications Figure 1. Internal schematic diagram Description The STL140N4LLF5 is an N-channel STripFETV Power MOSFET which has been designed to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). Table 1. Device summary Order code Marking Package Packaging STL140N4LLF5 140N4LLF5 PowerFLAT (5x6) Tape and reel June 2010 Doc ID 17586 Rev 1 1/10 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 10 change without notice. Contents STL140N4LLF5 C

1.79. irf530.pdf Size:53K _st

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IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID IRF530 100 V < 0.16 ? 16 A IRF530FI 100 V < 0.16 ? 11 A TYPICAL R = 0.12 ? DS(on) AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 3 HIGH CURRENT CAPABILITY 2 2 175oC OPERATING TEMPERATURE 1 1 APPLICATION ORIENTED CHARACTERIZATION TO-220 TO-220FI APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTER INTERNAL SCHEMATIC DIAGRAM AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF530 IRF530FI VDS Drain-source Voltage (VGS = 0) 100 V VDGR 100 V Drain- gate Voltage (R = 20 k?) GS VGS Gate-source Voltage 20 V o ID Drain Current (continuous) at Tc = 25 C16 A 11 o I Drain Current (continuous) at T = 100 C11 A 7.8 D c I () Drain Current (pulsed) 64 64 A DM o Ptot Total Dissipation at

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STP80PF55 P-CHANNEL 55V - 0.016 ? - 80A TO-220 STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STB80PF55 55 V < 0.018 ? 80 A TYPICAL RDS(on) = 0.016 ? EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 3 2 1 DESCRIPTION This Power MOSFET is the latest development of TO-220 STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS MOTOR CONTROL DC-DC & DC-AC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS = 20 k?) 55 V VGS Gate- source Voltage 16 V ID(*) Drain Current (continuos) at TC = 25C 80 A ID Drain Current (continuos) at TC = 100C 57 A IDM() Dr

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STS15N4LLF5 N-channel 40 V, 0.00625 ?, 15 A, SO-8 STripFET Power MOSFET Features Type VDSS RDS(on) max. ID STS15N4LLF5 40 V < 0.0076 ? 15 A Optimal RDS(on)x Qg trade-off @ 4.5 V Conduction losses reduced Switching losses reduced SO-8 Applications Switching application Description Figure 1. Internal schematic diagram This STripFETV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). Table 1. Device summary Order code Marking Package Packaging STS15N4LLF5 15C4L SO-8 Tape and reel April 2010 Doc ID 17339 Rev 1 1/12 www.st.com 12 Contents STS15N4LLF5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (c

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IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID IRF530FP 100 V < 0.16 ? 10 A TYPICAL R = 0.12 ? DS(on) 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY APPLICATION ORIENTED 3 CHARACTERIZATION 2 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE TO-220FP APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTER AUTOMOTIVE ENVRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS, Etc) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR 100 V Drain- gate Voltage (R = 20 k?) GS VGS Gate-source Voltage 20 V ID Drain Current (continuous) at Tc = 25 oC 10 A ID Drain Current (continuous) at Tc = 100 oC7 A IDM() Drain Current (pulsed) 64 A Ptot Total Dissipation at Tc = 25 oC35 W Derating Factor 0.23 W/oC VISO Insulation Withstand Voltage (DC) 2000

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STD5N52U STF5N52U N-channel 525 V, 1.28 ?, 4.4 A, DPAK, TO-220FP UltraFASTmesh Power MOSFET Features RDS(on) Type VDSS ID Pw max STD5N52U 525 V < 1.5 ? 4.4 A 70 W STF5N52U 525 V < 1.5 ? 4.4 A 25 W 3 3 2 100% avalanche tested 1 1 DPAK Outstanding dv/dt capability TO-220FP Gate charge minimized Very low intrinsic capacitances Very low RDS(on) Extremely low trr Application Figure 1. Internal schematic diagram Switching applications D(2) High voltage inverters specific fo LCD TV Lighting full bridge topology Motor control G(1) Description The UltraFASTmesh series associates all advantages of reduced on-resistance, Zener gate protection and very high dv/dt capability with an extremely enhanced fast body-drain recovery diode. S(3) AM01476v1 Table 1. Device summary Order code Marking Package Packaging STD5N52U 5N52U DPAK Tape and reel STF5N52U 5N52U TO-220FP Tube May 2009 Doc ID 15684 Rev 1 1/15 www.st.com 15 Contents STF5

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STL15DN4F5 Dual N-channel 40 V, 8 m?, 15 A PowerFLAT(5x6) double island, STripFET V Power MOSFET Features RDS(on) Type VDSS ID max. STL15DN4F5 40 V 9 m? 15 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge PowerFLAT (5x6) Low gate drive power losses Double island Application Switching applications Automotive Figure 1. Internal schematic diagram Description The device is a dual N-channel STripFET V. This Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). Table 1. Device summary Order code Marking Package Packaging PowerFLAT(5x6) STL15DN4F5 15DN4F5 Tape and reel Double island September 2010 Doc ID 17739 Rev 1 1/12 www.st.com 12 Contents STL15DN4F5 Contents 1 Electrical ratings . . . . . . . .

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STB80NF55L-06 STP80NF55L-06 N-CHANNEL 55V - 0.005 ? - 80A D?PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF55L-06 55 V < 0.0065 ? 80 A STP80NF55L-06 55 V < 0.0065 ? 80 A TYPICAL RDS(on) = 0.005 ? LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE 3 SURFACE-MOUNTING D2PAK (TO-263) 1 3 2 POWER PACKAGE IN TUBE (NO SUFFIX) OR 1 D2PAK IN TAPE & REEL (SUFFIX T4) TO-220 TO-263 (Suffix T4) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on- INTERNAL SCHEMATIC DIAGRAM resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value U

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STP80NF55-07 ? N - CHANNEL 55V - 0.0055? - 80A - TO-220 STripFET? POWER MOSFET TARGET DATA TYPE VDSS RDS(on) ID STP80NF55-07 55 V <0.07 ? 80 A TYPICAL R = 0.0055 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 3 DESCRIPTION 2 This Power MOSFET is the second generation of 1 STMicroelectronics unique Single Feature Size strip-based process. The resulting ? TO-220 transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR 55 V Drain- gate Voltage (RGS = 20 k?) VGS Gate-source Voltage 20 V o I Drain Current (continuous) at

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STP5NK100Z, STF5NK100Z STW5NK100Z N-channel 1000 V, 2.7 ?, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3 Power MOSFET Features VDSS Type RDS(on)max ID (@TJMAX) 3 2 1 STF5NK100Z 1000 V < 3.7 ? 3.5 A TO-220 TO-220FP STP5NK100Z 1000 V < 3.7 ? 3.5 A STW5NK100Z 1000 V < 3.7 ? 3.5 A Extremely high dv/dt capability 100% avalanche tested 3 2 1 Gate charge minimized TO-247 Very low intrinsic capacitances Very good manufacturing repeatibility Applications Figure 1. Internal schematic diagram Switching application D(2) Description The new SuperMESH series of Power MOSFETS is the result of further design improvements on ST's well-established strip- G(1) based PowerMESH layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH devices further complement an already broad range of innovative high voltage MOSFETs,

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STL70N4LLF5 N-channel 40 V, 0.0055 ?, 18 A, PowerFLAT (6x5) STripFET V Power MOSFET Preliminary Data Features RDS(on) Type VDSS ID max STL70N4LLF5 40 V 0.0065 ? 18 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) PowerFLAT ( 6x5 ) High avalanche ruggedness Low gate drive power losses Application Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of STs proprietary STripFET technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Order code Marking Package Packaging STL70N4LLF5 70N4LLF5 PowerFLAT (6x5) Tape and reel December 2008 Rev 1 1/10 This is preliminary information on a new product now in development or undergoing evaluation. D

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STB85NF55L STP85NF55L N-channel 55 V, 0.0060 ?, 80 A, TO-220, D2PAK STripFET II Power MOSFET Features RDS(on) Type VDSS ID max STB85NF55L 55 V < 0.008 ? 80 A STP85NF55L 55 V < 0.008 ? 80 A 3 3 Low threshold drive 2 1 1 D?PAK TO-220 Application Switching applications Description This Power MOSFET is the latest development of Figure 1. Internal schematic diagram STMicroelectronis unique "single feature size" strip-based process. The resulting transistorshows extremely high packing density D (TAB or 2) for low on-resistance, rugged avalanche characteristics andless critical alignment steps therefore a remarkable manufacturing reproducibility. G(1) S(3) AM01474v1 Table 1. Device summary Order code Marking Package Packaging STB85NF55LT4 B85NF55L D?PAK Tape and reel STP85NF55L P85NF55L TO-220 Tube August 2009 Doc ID 8544 Rev 8 1/14 www.st.com 14 Contents STB85NF55L, STP85NF55L Contents 1 Electrical ratings . . . . . . . . . . . . . . . .

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STB80PF55 STP80PF55 P-channel 55 V, 0.016 ?, 80 A TO-220, D2PAK STripFETTM II Power MOSFET Features Type VDSS RDS(on) ID STP80PF55 55V <0.018? 80A STB80PF55 55V <0.018? 80A 3 Extremely dv/dt capability 3 2 1 1 100% avalanche tested TO-220 D2PAK Application oriented characterization Application Switching applications Description Figure 1. Internal schematic diagram These Power MOSFETs are the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility. Table 1. Device summary Order code Marking Package Packaging STP80PF55 P80PF55 TO-220 Tube STB80PF55 B80PF55 Tape and reel D2PAK August 2010 Doc ID 8177 Rev 6 1/16 www.st.com 16 Contents STB80PF55, STP80PF55 Contents 1 Electrical ratings . . . . . . . . . .

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STD55N4F5 N-channel 40 V, 7.3 m?, 40 A, DPAK STripFET V Power MOSFET Features RDS(on) Type VDSS ID Pw max STD55N4F5 40 V < 8.5 m? 55 A 60 W Standard threshold drive 3 1 100% avalanche tested DPAK Surface mounting DPAK (TO-252) Applications Switching applications Automotive Figure 1. Internal schematic diagram Description The STD55N4F5 is a N-channel STripFETTM V. D (TAB or 2) This Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). G(1) S(3) AM01474v1 Table 1. Device summary Order code Marking Package Packaging STD55N4F5 55N4F5 DPAK Tape and reel June 2010 Doc ID 15661 Rev 3 1/13 www.st.com 13 Contents STD55N4F5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . .

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STB5N62K3, STD5N62K3, STF5N62K3 STP5N62K3, STU5N62K3 N-channel 620 V, 1.28 ?, 4.2 A SuperMESH3 Power MOSFET D?PAK, DPAK,TO-220FP, TO-220 and IPAK Features RDS(on) Order codes VDSS ID Pw max. 3 3 3 2 2 1 STB5N62K3 1 1 70 W STD5N62K3 DPAK TO-220 TO-220FP STF5N62K3 620 V < 1.6 ? 4.2 A 25 W STP5N62K3 70 W STU5N62K3 3 3 2 100% avalanche tested 1 1 IPAK Extremely large avalanche performance D?PAK Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1. Internal schematic diagram Application D(2) Switching applications Description G(1) These devices are made using the SuperMESH3 Power MOSFET technology that is obtained via improvements applied to STMicroelectronics SuperMESH technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and S(3) AM01476v1 high aval

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STD60NF55L STD60NF55L-1 N-channel 55V - 0.012? - 60A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD60NF55L-1 55V <0.015? 60A STD60NF55L 55V <0.015? 60A 3 3 Low threshold drive 2 1 1 Description DPAK IPAK This MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps Internal schematic diagram therefore a remarkable manufacturing reproducibility. Applications Switching application Order codes Part number Marking Package Packaging STD60NF55LT4 D60NF55L DPAK Tape & reel STD60NF55L-1 D60NF55L IPAK Tube July 2006 Rev 6 1/14 www.st.com 14 Contents STD60NF55L - STD60NF55L-1 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characterist

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STB140NF55 - STB140NF55-1 STP140NF55 N-channel 55V - 0.0065? - 80A - D2PAK - I2PAK - TO-220 STripFET II Power MOSFET General features Type VDSS RDS(on) ID (1) STB140NF55 55V <0.008? 80A STB140NF55-1 55V <0.008? 80A STP140NF55 55V <0.008? 80A 3 3 3 2 1. Current limited by package 1 2 1 1 D?PAK TO-220 I?PAK Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance Internal schematic diagram characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications Motor control High current, switching application Order codes Part number Marking Package Packaging STB140NF55 B140NF55 D?PAK Tape & reel STB140NF55-1 B140NF55 I?PAK Tube STP140NF55 P140NF55 TO-220 Tube March 2007 Rev 4 1/15 www.st.com Contents STB140NF55 - STB140NF55

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STB150NF55 STP150NF55 STW150NF55 N-CHANNEL 55V - 0.005 ? -120A D?PAK/TO-220/TO-247 STripFET II POWER MOSFET AUTOMOTIVE SPECIFIC TYPE VDSS RDS(on) ID STB150NF55 55 V <0.006 ? 120 A(**) STP150NF55 55 V <0.006 ? 120 A(**) STP150NF55 55 V <0.006 ? 120 A(**) TYPICAL RDS(on) = 0.005 ? 3 1 SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE D2PAK TO-247 TO-263 DESCRIPTION (Suffix T4) This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" 3 2 strip-based process. The resulting transistor 1 shows extremely high packing density for low on- TO-220 resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE Ordering Information SALES TYPE MARKING PACKAGE PACKAGING STB150NF55T4

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STB5N52K3, STD5N52K3, STF5N52K3 STP5N52K3, STU5N52K3 N-channel 525 V, 1.2 ?, 4.4 A SuperMESH3 Power MOSFET D?PAK, DPAK, TO-220FP, TO-220, IPAK Features Order codes VDSS RDS(on) max ID Pw STB5N52K3 70 W 3 3 3 2 2 1 STD5N52K3 70 W 1 1 STF5N52K3 525 V < 1.5 ? 4.4 A 25 W TO-220 TO-220FP DPAK STP5N52K3 70 W STU5N52K3 70 W 100% avalanche tested 3 3 2 Extremely high dv/dt capability 1 1 IPAK Gate charge minimized D?PAK Very low intrinsic capacitance Improved diode reverse recovery characteristics Figure 1. Internal schematic diagram Zener-protected D(2) Application Switching applications G(1) Description These devices are made using the SuperMESH3 Power MOSFET technology that is obtained via improvements applied to STMicroelectronics SuperMESH technology combined with a new optimized vertical structure. S(3) The resulting product has an extremely low on AM01476v1 resistance, superior dynamic performance and high avalanche c

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STB80NF55-06 STP80NF55-06 STP80NF55-06FP N-CHANNEL 55V - 0.005 ? - 80A TO-220/TO-220FP/D2PAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF55-06 55 V <0.0065 ? 80 A STP80NF55-06 55 V <0.0065 ? 80 A STP80NF55-06FP 55 V <0.0065 ? 60 A TYPICAL RDS(on) = 0.005 ? 3 3 1 EXCEPTIONAL dv/dt CAPABILITY 2 1 100% AVALANCHE TESTED D2PAK TO-220FP TO-263 APPLICATION ORIENTED (Suffix T4) CHARACTERIZATION SURFACE-MOUNTING D2PAK (TO-263) 3 2 POWER PACKAGE IN TUBE (NO SUFFIX) OR 1 IN TAPE & REEL (SUFFIX T4) TO-220 DESCRIPTION This Power MOSFET is the latest development of INTERNAL SCHEMATIC DIAGRAM STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL DC-D

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STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065? - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP80NF55L-08 55 V 0.008? 80 A STB80NF55L-08 55 V 0.008? 80 A STB80NF55L-08-1 55 V 0.008? 80 A 3 3 1 TYPICAL RDS(on) = 0.0065? 2 1 D2PAK LOW THRESHOLD DRIVE TO-220 LOGIC LEVEL DEVICE 3 2 1 I2PAK DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature INTERNAL SCHEMATIC DIAGRAM Size strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteris- tics and less critical alignment steps therefore a re- markable manufacturing reproducibility. APPLICATIONS HIGH CURRENT SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS =20k?) 55 V VGS Gate- source Voltage 16 V ID (1) Drain Current

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IRF540 IRF540FI N - CHANNEL100V - 00.50? - 30A - TO-220/TO-220FI POWER MOSFET TYPE VDSS RDS(on) ID IRF540 100 V < 0.077 ? 30 A IRF540FI 100 V < 0.077 ? 16 A TYPICAL R = 0.050 ? DS(on) AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 3 HIGH CURRENT CAPABILITY 2 2 175oC OPERATING TEMPERATURE 1 1 APPLICATION ORIENTED CHARACTERIZATION TO-220 TO-220FI APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTER INTERNAL SCHEMATIC DIAGRAM AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF530 IRF530FI VDS Drain-source Voltage (VGS = 0) 100 V VDGR 100 V Drain- gate Voltage (R = 20 k?) GS VGS Gate-source Voltage 20 V o ID Drain Current (continuous) at Tc = 25 C30 A 17 o I Drain Current (continuous) at T = 100 C21 A 12 D c I () Drain Current (pulsed) 120 120 A DM o Ptot Tota

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STB85NF55 STP85NF55 N-CHANNEL 55V - 0.0062 ? - 80A D2PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB85NF55 55 V <0.008 ? 80 A STP85NF55 55 V <0.008 ? 80 A TYPICAL RDS(on) = 0.0062 ? FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 3 2 D2PAK DESCRIPTION 1 TO-263 This Power MOSFET is the latest development of (Suffix T4) TO-220 STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS = 20 k?) 55 V VGS Gate- source Voltage 20 V ID() Drain Current (con

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STB80NF55-06 - STB80NF55-06-1 STP80NF55-06 - STP80NF55-06FP N-channel 55V - 0.005? - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB80NF55-06 55V <0.0065? 80A (1) 3 3 2 STB80NF55-06-1 55V <0.0065? 80A(1) 2 1 1 STP80NF55-06 55V <0.0065? 80A (1) TO-220 TO-220FP STP80NF55-06FP 55V <0.0065? 60A (1) 1. Limited by package Exceptional dv/dt capability 3 1 3 2 1 100% avalanche tested D?PAK I?PAK Application oriented characterization Description Internal schematic diagram This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications Switching application Order codes Part number Marking Package Packaging STB80NF55-06T4 B80N

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STD60NF55L N-CHANNEL 55V - 0.012? - 60A DPAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STD60NF55L 55V < 0.015? 60A TYPICAL RDS(on) = 0.012? LOW THRESHOLD DRIVE ADD SUFFIX T4 FOR ORDERING IN TAPE & 3 REEL 1 DPAK DESCRIPTION TO-252 This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting tran- sistor shows extremely high packing density for INTERNAL SCHEMATIC DIAGRAM low on-resistance, rugged avalance characteris- tics and less critical alignment steps therefore a re- markable manufacturing reproducibility.. APPLICATIONS AUTOMOTIVE MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS = 20 k?) 55 V VGS Gate- source Voltage 15 V ID Drain Current (continuous) at TC = 25C 60 A ID Drain Current (continuous) at TC = 100C 42 A IDM ( ) Drain Current (pulsed) 240 A PTOT Total Dissipation at TC

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STD5N52K3, STF5N52K3 STP5N52K3, STU5N52K3 N-channel 525 V, 1.2 ?, 4.4 A, DPAK, IPAK, TO-220, TO-220FP SuperMESH3 Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID Pw STD5N52K3 70 W 3 3 2 2 1 1 STF5N52K3 25 W 525 V < 1.5 ? 4.4 A TO-220 TO-220FP STP5N52K3 70 W STU5N52K3 100% avalanche tested 3 3 2 Extremely large avalanche performance 1 1 Gate charge minimized IPAK DPAK Very low intrinsic capacitances Zener-protected Figure 1. Internal schematic diagram Application D(2) Switching applications Description The new SuperMESH3 series of power G(1) MOSFETS is the result of the fine-tuning of ST's well-established strip-based PowerMESH layout with a new optimized vertical structure. The innovative design offer significantly reduced on- resistance, exceptional dynamic performance and very large avalanche capability, making the device suitable for the most demanding application. S(3) AM01476v1 Table 1. Device summ

1.104. stb80pf55.pdf Size:175K _st

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STB80PF55 P-CHANNEL 55V - 0.016 ? - 80A D2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STB80PF55 55 V < 0.018 ? 80 A TYPICAL RDS(on) = 0.016 ? EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED 3 CHARACTERIZATION 1 D2PAK DESCRIPTION TO-263 This Power MOSFET is the latest development of (Suffix T4) STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor ADD SUFFIX T4 FOR ORDERING IN TAPE & REEL shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS MOTOR CONTROL DC-DC & DC-AC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS = 20 k?) 55 V VGS Gate- source Voltage 16 V ID(*) Drain Current (continuos) at TC = 25C 8

1.105. stb80nf55l-06_stp80nf55l-06.pdf Size:399K _st

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STB80NF55L-06 STP80NF55L-06 N-CHANNEL 55V - 0.005 ? - 80A D?PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF55L-06 55 V < 0.0065 ? 80 A STP80NF55L-06 55 V < 0.0065 ? 80 A TYPICAL RDS(on) = 0.005 ? LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE 3 SURFACE-MOUNTING D2PAK (TO-263) 1 3 2 POWER PACKAGE IN TUBE (NO SUFFIX) OR 1 D2PAK IN TAPE & REEL (SUFFIX T4) TO-220 TO-263 (Suffix T4) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on- INTERNAL SCHEMATIC DIAGRAM resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value U

1.106. stb80nf55-08t4_stp80nf55-08_stw80nf55-08.pdf Size:362K _st

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STB80NF55-08T4 STP80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 ?, 80 A, TO-220, D2PAK, TO-247 STripFET Power MOSFET Features RDS(on) Type VDSS ID max 3 STB80NF55-08T4 55 V < 0.008 ? 80 A 2 3 1 2 STP80NF55-08 55 V < 0.008 ? 80 A 1 TO-247 TO-220 STW80NF55-08 55 V < 0.008 ? 80 A Standard threshold drive 3 Application 1 D?PAK Switching applications Description Figure 1. Internal schematic diagram This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary Order codes Marking Package Packaging STB80NF55-08T4 B80NF55-08 D?PAK Tape and reel STP80NF55-08 P80NF55-08 TO-220 Tube STW80NF55-08 W80NF55-08 TO-247 Tube April 2009 Doc ID 14511 Rev 2 1/15 www.st.com 15

1.107. stp80nf55.pdf Size:353K _st

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STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 ? - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF55-08/-1 55 V <0.008 ? 80 A STP80NF55-08 55 V <0.008 ? 80 A TYPICAL RDS(on) = 0.0065? 3 LOW THRESHOLD DRIVE 3 1 2 1 DESCRIPTION I2PAK D2PAK TO-262 This Power MOSFET is the latest development of TO-263 STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on- 3 2 resistance, rugged avalanche characteristics and 1 less critical alignment steps therefore a TO-220 remarkable manufacturing reproducibility. APPLICATIONS INTERNAL SCHEMATIC DIAGRAM SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS = 20 k?) 55 V VGS Gate- source Voltage 20 V ID() Drain C

1.108. std5n95k3_stf5n95k3_stp5n95k3_stu5n95k3.pdf Size:789K _st

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STD5N95K3, STF5N95K3 STP5N95K3, STU5N95K3 N-channel 950 V, 3 ?, 4 A, DPAK, TO-220, TO-220FP, IPAK Zener-protected SuperMESH3 Power MOSFET Features Type VDSS RDS(on) max ID Pw STD5N95K3 950 V < 3.5 ? 4 A 90 W 3 3 2 2 1 1 STF5N95K3 950 V < 3.5 ? 4 A 25 W TO-220 TO-220FP STP5N95K3 950 V < 3.5 ? 4 A 90 W STU5N95K3 950 V < 3.5 ? 4 A 90 W 100% avalanche tested 3 2 3 Extremely large avalanche performance 1 1 Gate charge minimized IPAK DPAK Very low intrinsic capacitances Zener-protected Figure 1. Internal schematic diagram Application D(2) Switching applications Description The new SuperMESH3 series of power G(1) MOSFETS is the result of the fine-tuning of ST's well-established strip-based PowerMESH layout with a new optimized vertical structure. The innovative design offer significantly reduced on- resistance, exceptional dynamic performance and very large avalanche capability, making the device suitable for the most demanding app

1.109. irf520.pdf Size:297K _st

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IRF520 N-CHANNEL 100V - 0.115 ? - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE VDSS RDS(on) ID IRF520 100 V <0.27 ? 10 A TYPICAL RDS(on) = 0.115? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 2 175 oC OPERATING TEMPERATURE 1 DESCRIPTION TO-220 This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is INTERNAL SCHEMATIC DIAGRAM also intended for any applications with low gate drive requirements. APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED SOLENOID AND RELAY DRIVERS REGULATOR DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, etc.) ABSOLUTE MAXIMUM RATINGS Symbol

1.110. stp5nk90z_stf5nk90z.pdf Size:396K _st

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STP5NK90Z STF5NK90Z N-channel 900V - 2? - 4.5A - TO-220/TO-220FP Zener - Protected SuperMESH MOSFET General features VDSS Type RDS(on) ID PW (@Tjmax) STP5NK90Z 900 V < 2.5 ? 4.5 A 125W STF5NK90Z 900 V < 2.5 ? 4.5 A(1) 30W 3 1. Limited only by maximum temperature allowed 2 1 Extremely high dv/dt capability TO-220 TO-220FP Improved esd capability 100% avalanche rated Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility Internal schematic diagram Description The SuperMESH series is obtained through an extreme optimization of STs well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. Applications Switching application Order codes Part number M

1.111. stp80nf55l-08.pdf Size:339K _st

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STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065? - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP80NF55L-08 55 V 0.008? 80 A STB80NF55L-08 55 V 0.008? 80 A STB80NF55L-08-1 55 V 0.008? 80 A 3 3 1 TYPICAL RDS(on) = 0.0065? 2 1 D2PAK LOW THRESHOLD DRIVE TO-220 LOGIC LEVEL DEVICE 3 2 1 I2PAK DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature INTERNAL SCHEMATIC DIAGRAM Size strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteris- tics and less critical alignment steps therefore a re- markable manufacturing reproducibility. APPLICATIONS SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RG

1.112. stb85nf55l.pdf Size:374K _st

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STB85NF55L STP85NF55L N-CHANNEL 55V - 0.0060 ? - 80A D2PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STP85NF55L 55 V <0.008 ? 80 A STB85NF55L 55 V <0.008 ? 80 A TYPICAL RDS(on) = 0.0060 ? LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE 3 1 3 2 D2PAK 1 DESCRIPTION TO-263 This Power MOSFET is the latest development of (Suffix T4) TO-220 STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on- ADD SUFFIX T4 FOR ORDERING IN TAPE & REEL resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- INTERNAL SCHEMATIC DIAGRAM able manufacturing reproducibility. APPLICATIONS SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT Ordering Information SALES TYPE MARKING PACKAGE PACKAGING STP85NF55L P85NF55L TO-220 TUBE STB85NF55L B85NF55L D2PAK TUBE STB85NF55LT4 B85NF55L D2PAK TAPE

1.113. stb141nf55_stb141nf55-1_stp141nf55.pdf Size:362K _st

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STB141NF55 - STB141NF55-1 STP141NF55 N-channel 55V - 0.0065? - 80A - D2PAK - I2PAK - TO-220 STripFET II Power MOSFET Features Type VDSS RDS(on) ID (1) STB141NF55 55V <0.008? 80A STB141NF55-1 55V <0.008? 80A STP141NF55 55V <0.008? 80A 3 3 3 2 1. Current limited by package 1 2 1 1 D?PAK TO-220 I?PAK Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and Figure 1. Internal schematic diagram less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications Motor control High current, switching application Automotive environment Table 1. Device summary Order code Marking Package Packaging STB141NF55 B141NF55 D?PAK Tape & reel STB141NF55-1 B141NF55 I?PAK Tube STP141NF55 P141NF55 TO-220 Tube August 2007 Rev 1 1/15 www.st.c

1.114. stb5nk52zd-1_std5nk52zd_stf5nk52zd_stp5nk52zd.pdf Size:776K _st

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STD5NK52ZD, STB5NK52ZD-1 STF5NK52ZD,STP5NK52ZD N-channel 520 V,1.22 ?,4.4 A,TO-220,IPAK,I2PAK,DPAK,TO-220FP Zener-protected SuperMESH Power MOSFET Features RDS(on) Type VDSS ID Pw max 3 2 IPAK 3 STB5NK52ZD-1 520 V < 1.5 ? 4.4 A 70 W 2 1 2 I PAK 1 STD5NK52ZD-1 520 V < 1.5 ? 4.4 A 70 W 3 STD5NK52ZD 520 V < 1.5 ? 4.4 A 70 W 1 STF5NK52ZD 520 V < 1.5 ? 4.4 A 25 W DPAK STP5NK52ZD 520 V < 1.5 ? 4.4 A 70 W 100% avalanche tested 3 2 3 TO-220 1 2 Extremely high dv/dt capability 1 TO-220FP Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. Internal schematic diagram Improved ESD capability D(2) Application Switching applications G(1) Description The SuperFREDMesh series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a fast body-drain recovery diode. Such series complements the FDmesh advanced S(3) AM01476v1 techn

1.115. stb85nf55_sti85nf55_stp85nf55.pdf Size:945K _st

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STB85NF55, STI85NF55 STP85NF55 N-channel 55 V, 0.0062 ?, 80 A, TO-220, D2PAK, I2PAK STripFET II Power MOSFET Features RDS(on) Type VDSS ID max STB85NF55 55 V < 0.008 ? 80 A STI85NF55 55 V < 0.008 ? 80 A 3 3 STP85NF55 55 V < 0.008 ? 80 A 3 1 2 2 1 1 D?PAK TO-220 I?PAK Exceptional dv/dt capability 100% avalanche tested Applications Switching application Automotive environment Figure 1. Internal schematic diagram Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary Order code Marking Package Packaging STB85NF55 B85NF55 D?PAK Tape and reel STI85NF55 I85NF55 I?PAK Tube STP85NF55 P85NF55 TO-220 Tube October 2009 Doc ID 8405 Rev 9 1/15 www.

1.116. stw80nf55-06.pdf Size:114K _st2

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STW80NF55-06 N-CHANNEL 55V - 0.005? - 80A TO-247 STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STW80NF55-06 55 V < 0.0065 ? 80 A TYPICAL RDS(on) = 0.005? EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 2 1 TO-247 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on-resis- INTERNAL SCHEMATIC DIAGRAM tance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS DC-AC & DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS = 20 k?) 55 V VGS Gate- source Voltage 20 V ID (*) Drain Current (continuos) at TC = 25C 80 A ID Drain Current (conti

1.117. irf520-1-2-3-fi.pdf Size:502K _st2

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1.118. irf540-1-2-3-fi.pdf Size:481K _st2

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1.119. stw80nf55.pdf Size:277K _st2

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STW80NF55-08 N-CHANNEL 55V - 0.0065? - 80A TO-247 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STW80NF55-08 55 V < 0.008 ? 80 A TYPICAL RDS(on) = 0.0065? EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE 3 2 1 DESCRIPTION TO-247 This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on-resis- INTERNAL SCHEMATIC DIAGRAM tance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS DC-AC & DC-DC CONVERTERS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS = 20 k?) 55 V VGS Gate- source Voltage 20 V ID (*) Drain Current (continuous) at TC = 25C 80 A ID Drai

1.120. irf530-1-2-3-fi.pdf Size:276K _st2

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1.121. f5h2201.pdf Size:57K _sanyo

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Ordering number : ENA0403 F5H2201 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching F5H2201 Applications Applications High-speed switching applications (switching regulator, driver circuit). Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. The F5H2201 consists of two chips which are equivalent to the 2SC6082 encapsulated in a package. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V Collector-to-Emitter Voltage VCES 60 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 10 A Collector Current (PW=1s) IC Duty cycle?1% 12 A Collector Current (PW=100ms) IC Duty cycle?1% 15 A Collector Current (Pulse) ICP PW?10s, duty cycle?10% 20 A Base Current IB 3 A 2 W Collector Dissipation PC Tc=25C, 1unit 25

1.122. f5h2101.pdf Size:59K _sanyo

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Ordering number : ENA0725 F5H2101 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor F5H2101 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. The F5H2101 consists of two chips which are equivalent to the 2SA2210 encapsulated in a package. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO --50 V Collector-to-Emitter Voltage VCEO --50 V Emitter-to-Base Voltage VEBO --6 V --15 A Collector Current IC PW=100ms, duty cycle?1% --20 A Collector Current (Pulse) ICP PW?10s, duty cycle?10% --25 A Base Current IB --3 A 2 W Collector Dissipation PC Tc=25C30 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Any and all SANYO Semiconductor Co.,Ltd. products described or

1.123. r07ds0055ej_rjh60f5dpk.pdf Size:85K _renesas

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Preliminary Datasheet RJH60F5DPK R07DS0055EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 24, 2010 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 ?, Ta = 25C, inductive load) Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector (Flange) 1 2 3 E Absolute Maximum Ratings (Tc = 25C) Item Symbol Ratings Unit Collector to emitter voltage VCES 600 V Gate to emitter voltage VGES 30 V Collector current Tc = 25 C IC 80 A Tc = 100 C IC 40 A Collector peak current ic(peak) Note1 160 A Collector to emitter diode forward peak current iDF(peak) Note2 100 A Collector dissipation PC 260.4 W Junction to case thermal impedance (I

1.124. r07ds0587ej_rjp60f5dpm.pdf Size:81K _renesas

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Preliminary Datasheet RJP60F5DPM R07DS0587EJ0100 600 V - 40 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) ? Trench gate and thin wafer technology ? High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate G 2. Collector 3. Emitter E 1 2 3 Absolute Maximum Ratings (Tc = 25C) Item Symbol Ratings Unit Collector to emitter voltage VCES 600 V Gate to emitter voltage VGES 30 V Collector current Tc = 25 C IC 80 A Tc = 100 C IC 40 A Collector peak current ic(peak) Note1 160 A Collector dissipation PC 45 W Junction to case thermal impedance ?j-c 2.78 C/W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. Pulse width limited by safe operating area. 2. PW ? 5 ?s, duty cycle ? 1% R07DS0587EJ0100 Rev.1.00 Page 1 of 6 Nov 25, 2011 RJP60F5DPM Pr

1.125. r07ds0326ej_rjh60f5dpq.pdf Size:88K _renesas

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Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200 600 V - 40 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 ?, Ta = 25C, inductive load) Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector 1 2 E 3 Absolute Maximum Ratings (Tc = 25C) Item Symbol Ratings Unit Collector to emitter voltage VCES 600 V Gate to emitter voltage VGES 30 V Collector current Tc = 25 C IC 80 A Tc = 100 C IC 40 A Collector peak current ic(peak) Note1 160 A Collector to emitter diode forward peak current iDF(peak) Note2 100 A Collector dissipation PC 260.4 W Junction to case thermal impedance (IGBT) ?j

1.126. mmbf5103.pdf Size:79K _fairchild_semi

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MMBF5103 N-Channel Switch G This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. See J111 for characteristics. S SOT-23 D Mark: 66A 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 40 V VGS Gate-Source Voltage -40 V IGF Forward Gate Current 50 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)GSS Gate-Source

1.127. pf5102.pdf Size:26K _fairchild_semi

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PF5102 N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabized amplifiers. Sourced from process 51. See J111 for characteristics. TO-92 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 40 V VGS Gate-Source Voltage -40 V IGF Forward Gate Current 50 A TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)GSS Gate-Source Breakdwon Voltage IC =

1.128. fqp5n60c_fqpf5n60c.pdf Size:858K _fairchild_semi

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TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25C unl

1.129. fjpf5200.pdf Size:487K _fairchild_semi

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January 2009 FJPF5200 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A. TO-220F High Power Dissipation : 50watts. 1 High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to FJPF1943 Thermal and electrical Spice models are available. Same transistor is also available in: -- TO264 package, 2SC5200/FJL4315 : 150 watts -- TO3P package, 2SC5242/FJA4313 : 130 watts -- TO220 package, FJP5200 : 80 watts Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Ratings Units BVCBO Collector-Base Voltage 250 V BVCEO Collector-Emitter Voltage 250 V BVEBO Emitter-Base Voltage 5 V IC Collector Current(DC) 17 A IB Base Current 1.5 A PD Total Device Dissipation(TC=25C) 50 W Derate above 25C 0.4 W/C TJ, TSTG J

1.130. 2n5484_2n5485_2n5486_mmbf5484_mmbf5485_mmbf5486.pdf Size:357K _fairchild_semi

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February 2009 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5484/5485/5486 MMBF5484/5485/5486 Rev. 1.0.0 1 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 2 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 3 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 4 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 5 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 6 TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Green FPS Power247 SuperSOT-8 Build it Now Green FPS e-Series POWEREDGE SyncFET CorePLUS GTO Power-SPM The Power Franchise CROSSV

1.131. fsbf5ch60b.pdf Size:451K _fairchild_semi

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June 2007 TM Motion-SPM FSBF5CH60B Smart Power Module Features General Description It is an advanced motion-smart power module (Motion-SPMTM) UL Certified No.E209204(SPM27-JA package) that Fairchild has newly developed and designed to provide 600V-5A 3-phase IGBT inverter bridge including control ICs very compact and high performance ac motor drives mainly tar- for gate driving and protection geting low-power inverter-driven application like air conditioner and washing machine. It combines optimized circuit protection Easy PCB layout due to built in bootstrap diode and drive matched to low-loss IGBTs. System reliability is fur- Divided negative dc-link terminals for inverter current sensing ther enhanced by the integrated under-voltage lock-out and applications short-circuit protection. The high speed built-in HVIC provides opto-coupler-less single-supply IGBT gate driving capability that Single-grounded power supply due to built-in HVIC further reduc

1.132. irf510.pdf Size:151K _fairchild_semi

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1.133. irf530.pdf Size:180K _fairchild_semi

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1.134. irf510a.pdf Size:252K _fairchild_semi

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IRF510A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS(on) = 0.4 ? n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 5.6 A n Improved Gate Charge n Extended Safe Operating Area TO-220 n 175C Operating Temperature n Lower Leakage Current : 10 ?A (Max.) @ VDS = 100V n Lower RDS(ON) : 0.289 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 Continuous Drain Current (TC=25?) 5.6 ID A Continuous Drain Current (TC=100?) 4 IDM Drain Current-Pulsed (1) 20 A VGS Gate-to-Source Voltage 20 V EAS Single Pulsed Avalanche Energy (2) 63 mJ IAR Avalanche Current (1) 5.6 A EAR Repetitive Avalanche Energy (1) 3.3 mJ dv/dt Peak Diode Recovery dv/dt (2) 6.5 V/ns Total Power Dissipation (TC=25?) 33 W PD Linear Derating Factor 0.22 W/C Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range C Maximum Lead Temp.

1.135. fqpf5p20.pdf Size:610K _fairchild_semi

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May 2000 TM QFET QFET QFET QFET FQPF5P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. -3.4A, -200V, RDS(on) = 1.4? @VGS = -10 V This advanced technology has been especially tailored to Low gate charge ( typical 10 nC) minimize on-state resistance, provide superior switching Low Crss ( typical 12 pF) performance, and withstand high energy pulse in the Fast switching avalanche and commutation mode. These devices are well 100% avalanche tested suited for high efficiency switching DC/DC converters. S ? ? ? ? ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G D S TO-220F D FQPF Series Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter FQPF5P20 Units VDSS Drain-Source Voltage -200 V ID Drain Current - Continuous (TC =

1.136. fjpf5321.pdf Size:70K _fairchild_semi

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FJPF5321 High Voltage and High Reliability High speed Switching Wide Safe Operating Area TO-220F 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Power Dissipation(TC=25C) 40 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 C * Pulse Test: Pulse Width = 5ms, Duty Cycle?10% Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 800 - - V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 500 - - V BVEBO Emitter-Base Breakdown Voltage IC =1mA, IC = 0 7 - - V ICBO Collector Cut-off Cu

1.137. pf5103.pdf Size:150K _fairchild_semi

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October 2006 PF5103 tm N-Channel Switch Features This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from process 51. TO-92 Marking : PF5103 1 2 3 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 40 V VGS Gate-Source Voltage -40 V IGF Forward Gate Current 50 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* Symbol Parameter Value Units PD Total Device Dissipation 625 mW Derate above 25C 5.0 mW/C R?JC Thermal Resistance, Junction t

1.138. sgf5n150uf.pdf Size:292K _fairchild_semi

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1.139. fqpf50n06.pdf Size:630K _fairchild_semi

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May 2001 TM QFET FQPF50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 60V, RDS(on) = 0.022? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well 175C maximum junction temperature rating suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter FQPF50N06 Units VDSS Drain-Source Volt

1.140. fqpf5n40.pdf Size:728K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 400V, RDS(on) = 1.6? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. D G G D S TO-220F S AbsoIute Maximum Ratings TC = 25C unless otherwise noted SymboI Parameter FQPF5N40 Units VDSS Drain-Source Voltage 400 V ID Drain Current - Continuous (TC = 25C) 3.0 A - Continuous (TC = 100C)

1.141. irf530a.pdf Size:254K _fairchild_semi

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IRF530A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature A (Max.) @ VDS = 100V Lower Leakage Current : 10 ? Lower RDS(ON) : 0.092 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) C 14 ID A ? Continuous Drain Current (TC=100 ) C 9.9 IDM Drain Current-Pulsed 1 56 A O + VGS Gate-to-Source Voltage _ 0 V EAS Single Pulsed Avalanche Energy 2 261 mJ O IAR Avalanche Current 1 14 A O EAR Repetitive Avalanche Energy 1 5.5 mJ O 3 dv/dt Peak Diode Recovery dv/dt 6.5 V/ns O ? Total Power Dissipation (TC=25 ) W C 55 PD ? Linear Derating Factor 0.36 W/ C Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Rang

1.142. fqp5n50c_fqpf5n50c.pdf Size:879K _fairchild_semi

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TM QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25C unless

1.143. fdp5n50nzu_fdpf5n50nzu.pdf Size:702K _fairchild_semi

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February 2010 ?TM UniFET-II FDP5N50NZU / FDPF5N50NZU tm N-Channel MOSFET? 500V, 3.9A, 2.0? Features Description RDS(on) = 1.7? ( Typ.)@ VGS = 10V, ID = 1.95A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 9nC) DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- Fast Switching mance, and withstand high energy pulse in the avalanche and 100% Avalanche Tested commutation mode. These devices are well suited for high effi- cient switching mode power supplies and active power factor Improved dv/dt Capability correction. ESD Imoroved Capability RoHS Compliant ? D D G G TO-220F G D S TO-220 G D S FDPF Series FDP Series (potted) S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDP5N50NZU FDPF5N50NZU

1.144. irf520a.pdf Size:243K _fairchild_semi

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IRF520A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 C) 9.2 ID A ? Continuous Drain Current (TC=100 C) 6.5 1 IDM Drain Current-Pulsed O 37 A + VGS Gate-to-Source Voltage _ 20 V 2 EAS Single Pulsed Avalanche Energy O 113 mJ IAR Avalanche Current 1 O 9.2 A EAR Repetitive Avalanche Energy 1 O 4.5 mJ dv/dt Peak Diode Recovery dv/dt 3 6.5 V/ns O ? Total Power Dissipation (TC=25 C) W 45 PD ? Linear Derating Factor 0.3 W/ C Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range ?

1.145. irf540a.pdf Size:256K _fairchild_semi

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IRF540A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) C 28 ID A ? Continuous Drain Current (TC=100 ) C 19.8 IDM Drain Current-Pulsed 1 110 A O + VGS Gate-to-Source Voltage _ 0 V EAS Single Pulsed Avalanche Energy 2 523 mJ O IAR Avalanche Current 1 28 A O EAR Repetitive Avalanche Energy 1 10.7 mJ O 3 dv/dt Peak Diode Recovery dv/dt 6.5 V/ns O ? Total Power Dissipation (TC=25 ) W C 107 PD ? Linear Derating Factor 0.71 W/ C Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature

1.146. mmbf5434.pdf Size:73K _fairchild_semi

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MMBF5434 N-Channel Switch This device is designed for digital switching 3 applications where very low on resistance is mandatory. Sourced from Process 58. 2 SuperSOT-3 1 Marking: 61Z 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)GSS Gate-Source Breakdwon Voltage IG = -1.0A, VDS =

1.147. fjpf5021.pdf Size:57K _fairchild_semi

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FJPF5021 High Voltage and High Reliability High Speed Switching : tF = 0.1s(Typ.) Wide SOA TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V V CEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A IB Base Current 2 A PC Collector Dissipation (TC=25C) 40 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 800 V BVCEO Collector-Emitter Sustaining Voltage IC = 5mA, IB = 0 500 V BVEBO Emitter-Base Breakdown Voltage 7 V IE = 1mA, IC = 0 VCEX (sus) Collector-Emitter Sustaining Voltage IC = 2.5A, IB1 = -IB2 = 1A 500 V L = 1mH, Clamped ICBO Collector Cut-off

1.148. fdp51n25_fdpf51n25.pdf Size:2977K _fairchild_semi

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July 2008 UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description 51A, 250V, RDS(on) = 0.06? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 55 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 63 pF) stripe, DMOS technology. Fast switching This advanced technology has been especially tailored to Improved dv/dt capability minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G TO-220 TO-220F G D S G D S FDP Series FDPF Series S Absolute Maximum Ratings Symbol Parameter FDP51N25 FDPF51N25 Unit VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25C) 51 51* A - Continuous (TC = 100C) 30 30* A (Note 1) IDM Drain Current - Pulsed A

1.149. irf540.pdf Size:146K _fairchild_semi

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1.150. fdp5n50nzf_fdpf5n50nzf.pdf Size:256K _fairchild_semi

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February 2010 ?TM UniFET-II FDP5N50NZF / FDPF5N50NZF tm N-Channel MOSFET? 500V, 4.2A, 1.75? Features Description RDS(on) = 1.57? ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 9nC) DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- Fast Switching mance, and withstand high energy pulse in the avalanche and 100% Avalanche Tested commutation mode. These devices are well suited for high effi- cient switching mode power supplies and active power factor Improved dv/dt Capability correction. ESD Imoroved Capability RoHS Compliant ? D D G G TO-220F TO-220 G D S G D S FDPF Series FDP Series (potted) S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDP5N50NZF FDPF5N50NZF U

1.151. fjpf5027.pdf Size:63K _fairchild_semi

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FJPF5027 High Voltage and High Reliability High Speed Switching Wide SOA TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Current (Pulse) 10 A IB Base Current 1.5 A PC Collector Dissipation ( TC=25C) 40 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1100 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 800 V BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V VCEX(sus) Collector-Emitter Sustaining Voltage IC = 1.5A, IB1 = -IB2 = 0.3A 800 V L = 2mH, Clamped ICBO Collector Cut-off Current VCB = 800V

1.152. fqpf5n90.pdf Size:665K _fairchild_semi

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September 2000 TM QFET QFET QFET QFET FQPF5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 900V, RDS(on) = 2.3 ? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter FQPF5N90 Units VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (TC = 25C) 3.0 A - Continuous (TC = 100C) 1.9 A IDM (Note 1) 12 A Drain Current - Pulsed

1.153. fdp52n20_fdpf52n20t.pdf Size:1196K _fairchild_semi

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October 2007 UniFETTM FDP52N20 / FDPF52N20T tm N-Channel MOSFET 200V, 52A, 0.049? Features Description RDS(on) = 0.041? ( Typ.)@ VGS = 10V, ID = 26A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 49nC) DMOS technology. Low Crss ( Typ. 66pF) This advance technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- Fast switching mance, and withstand high energy pulse in the avalanche and 100% avalanche tested commutation mode. These devices are well suited for high effi- cient switching mode power supplies and active power factor Improve dv/dt capability correction. RoHS compliant D G TO-220 TO-220F G D S G D S FDP Series FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter FDP52N20 FDPF52N20T Units VDSS Drain to Source Voltage 200 V VGSS Gate to Source Volta

1.154. fgpf50n33bt.pdf Size:655K _fairchild_semi

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April 2009 FGPF50N33BT tm 330V, 50A PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) =1.6V @ IC = 50A tions where low conduction and switching losses are essential. High input impedance Fast switching Applications PDP System TO-220F G C E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 330 V VGES Gate to Emitter Voltage 30 V IC Collector Current 50 A @ TC = 25oC ICpulse (1)* Pulsed Collector Current 120 A @ TC = 25oC ICpulse (2)* Pulsed Collector Current 160 A @ TC = 25oC Maximum Power Dissipation @ TC = 25oC43 W PD Maximum Power Dissipation @ TC = 100oC 17.2 W o TJ Operating Junction Temperature -55 to +150 C o Tstg Storage Temperature Range -55 to +150 C Maximum Lead Temp. for soldering o TL 300 C Purposes, 1/8 from case f

1.155. irf550a.pdf Size:261K _fairchild_semi

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IRF550A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature A (Max.) @ VDS = 100V Lower Leakage Current : 10 ? Lower RDS(ON) : 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) C 40 ID A ? Continuous Drain Current (TC=100 ) C 28.3 IDM Drain Current-Pulsed 1 160 A O VGS Gate-to-Source Voltage + V _ 0 EAS Single Pulsed Avalanche Energy 2 640 mJ O IAR Avalanche Current 1 40 A O EAR Repetitive Avalanche Energy 1 16.7 mJ O 3 dv/dt Peak Diode Recovery dv/dt 6.5 V/ns O ? Total Power Dissipation (TC=25 ) W C 167 PD ? Linear Derating Factor 1.11 W/ C Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature

1.156. fdp5n50f_fdpf5n50ft.pdf Size:427K _fairchild_semi

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December 2007 UniFETTM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55? Features Description RDS(on) = 1.25? ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pluse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor- Improved dv/dt capability correction. RoHS compliant D G TO-220F TO-220 G D S G D S FDPF Series FDP Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDP5N50F FDPF5N50FT Units VDSS Drain to Source Voltage 500 V VGSS Gate to S

1.157. mmbf5484.pdf Size:754K _fairchild_semi

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2N5484 MMBF5484 2N5485 MMBF5485 2N5486 MMBF5486 G S G TO-92 S SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage - 25 V IGF Forward Gate Current 10 mA Operating and Storage Junction Temperature Range -55 to +150 C TJ ,Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N5484

1.158. fdp5n60nz_fdpf5n60nz.pdf Size:265K _fairchild_semi

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November 2010 TM UniFET-II FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET? 600V, 4.5A, 2.0? Features Description RDS(on) = 1.65? ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 10nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast Switching performance, and withstand high energy pulse in the avalanche 100% Avalanche Tested and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor Improved dv/dt Capability correction. ESD Improved Capability RoHS compliant D D G G TO-220F TO-220 G S D G D S FDPF Series FDP Series (potting) S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDP5N60NZ FDPF5N60NZ Units VDSS D

1.159. fdp55n06_fdpf55n06.pdf Size:1209K _fairchild_semi

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TM UniFET FDP55N06/FDPF55N06 60V N-Channel MOSFET Features Description 55A, 60V, RDS(on) = 0.022 ? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 30 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the avalanche Improved dv/dt capability and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D G TO-220 TO-220F G D S G D S FDP Series FDPF Series S Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter FDP55N06 FDPF55N06 Units VDSS Drain-Source Voltage 60 V ID Drain Current - Conti

1.160. 2n5460_2n5461_2n5462_mmbf5460_mmbf5461_mmbf5462.pdf Size:114K _fairchild_semi

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2N5460 MMBF5460 2N5461 MMBF5461 2N5462 MMBF5462 G S G TO-92 D SOT-23 NOTE: Source & Drain S Mark: 6E / 61U / 61V are interchangeable D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89. Absolute Maximum Ratings* TA = 25C unless otherwise noted - Symbol Parameter Value Units VDG Drain-Gate Voltage - 40 V VGS Gate-Source Voltage 40 V IGF Forward Gate Current 10 mA Operating and Storage Junction Temperature Range -55 to +150 TJ ,Tstg C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteri

1.161. 2n5457_2n5458_2n5459_mmbf5457_mmbf5458_mmbf5459.pdf Size:129K _fairchild_semi

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2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 G S TO-92 G S SOT-23 NOTE: Source & Drain D D are interchangeable Mark: 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage - 25 V IGF Forward Gate Current 10 mA Operating and Storage Junction Temperature Range -55 to +150 C TJ, Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteris

1.162. fdp5n50nz_fdpf5n50nz.pdf Size:247K _fairchild_semi

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March 2010 UniFET-IITM FDP5N50NZ / FDPF5N50NZ tm N-Channel MOSFET 500V, 4.5A, 1.5? Features Description RDS(on) = 1.38? (Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transis tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (Typ. 9nC) DMOS technology. Low Crss (Typ. 4pF) This advance technology has been especially tailored to mini mize on-state resistance, provide superior switching perfor Fast Switching mance, and withstand high energy pulse in the avalanche and 100% Avalanche Tested commutation mode. These devices are well suited for high effi cient switching mode power supplies and active power factor Improved dv/dt Capability correction. ESD Imoroved Capability RoHS Compliant D D G G TO-220F TO-220 G D S FDPF Series FDP Series (potted) S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDP5N50NZ FDPF5N50NZ Units VDSS Drain to Source Volt

1.163. fqpf5n50cf.pdf Size:657K _fairchild_semi

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TM FRFET FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS(on) = 1.55 ? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 18nC) DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to mini- Fast switching mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and 100% avalanche tested commutation mode. These devices are well suited for high effi- Improved dv/dt capability ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220F G D S FQPF Series S Absolute Maximum Ratings Symbol Parameter FQPF5N50CF Units VDSS Drain-

1.164. fdp5n50_fdpf5n50.pdf Size:265K _fairchild_semi

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December 2007 UniFETTM FDP5N50 / FDPF5N50 tm N-Channel MOSFET 500V, 5A, 1.4? Features Description RDS(on) = 1.15? ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pluse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power Improved dv/dt capability factor correction. RoHS compliant D G TO-220F TO-220 G D S G D S FDPF Series FDP Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDP5N50 FDPF5N50 Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 30

1.165. fdp5n50u_fdpf5n50ut.pdf Size:224K _fairchild_semi

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November2009 TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0? Features Description RDS(on) = 1.65? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC) DOMS technology. Low Crss ( Typ. 5pF) This advance technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- Fast switching mance, and withstand high energy pulse in the avalanche and 100% avalanche tested commutationmode. These devices are well suited for high effi- cient switched mode power supplies and active power factor cor- Improved dv/dt capability rection. RoHS compliant D G TO-220F TO-220 G D S G D S FDPF Series FDP Series (potted) S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDP5N50U FDPF5N50UT Units VDSS Drain to Source Voltage 500 V VGS

1.166. irf5nj6215.pdf Size:116K _international_rectifier

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PD - 94284A HEXFET POWER MOSFET IRF5NJ6215 SURFACE MOUNT (SMD-0.5) 150V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ6215 -150V 0.29? -11A Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS(on) fast switching speed and ruggedized device design Avalanche Energy Ratings that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements Ease of Paralleling These devices are well-suited for applications such Hermetically Sealed as switching power supplies, motor controls, invert- Surface Mount ers, choppers, audio amplifiers and high-energy pulse Light Weight circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = -10V, TC =

1.167. irf530pbf.pdf Size:2177K _international_rectifier

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PD - 94931 IRF530PbF Lead-Free 1/8/04 Document Number: 91019 www.vishay.com 1 IRF530PbF Document Number: 91019 www.vishay.com 2 IRF530PbF Document Number: 91019 www.vishay.com 3 IRF530PbF Document Number: 91019 www.vishay.com 4 IRF530PbF Document Number: 91019 www.vishay.com 5 IRF530PbF Document Number: 91019 www.vishay.com 6 IRF530PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK MIN 1 - GATE 1 2 3 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045) 0

1.168. irf5m3710.pdf Size:114K _international_rectifier

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PD - 94234 HEXFET POWER MOSFET IRF5M3710 THRU-HOLE (TO-254AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 100V 0.03? 35A* IRF5M3710 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS(on) fast switching speed and ruggedized device design Avalanche Energy Ratings that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements Ease of Paralleling These devices are well-suited for applications such Hermetically Sealed as switching power supplies, motor controls, invert- Light Weight ers, choppers, audio amplifiers and high-energy pulse circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25C Continuous Drain

1.169. irf5m3415.pdf Size:113K _international_rectifier

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PD - 94286A HEXFET POWER MOSFET IRF5M3415 THRU-HOLE (TO-254AA) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 150V 0.049? 35A IRF5M3415 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS(on) fast switching speed and ruggedized device design Avalanche Energy Ratings that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements Ease of Paralleling These devices are well-suited for applications such Hermetically Sealed as switching power supplies, motor controls, invert- Light Weight ers, choppers, audio amplifiers and high-energy pulse circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25C Continuous Drai

1.170. irfpf50.pdf Size:863K _international_rectifier

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PD - 94889 IRFPF50PbF Lead-Free 12/11/03 Document Number: 91251 www.vishay.com 1 IRFPF50PbF Document Number: 91251 www.vishay.com 2 IRFPF50PbF Document Number: 91251 www.vishay.com 3 IRFPF50PbF Document Number: 91251 www.vishay.com 4 IRFPF50PbF Document Number: 91251 www.vishay.com 5 IRFPF50PbF Document Number: 91251 www.vishay.com 6 IRFPF50PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2.50 (.089) - B - - A - 1.50 (.059) 5.50 (.217) 4 20.30 (.800) NOTES: 5.50 (.217) 19.70 (.775) 2X 4.50 (.177) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 1 2 3 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE - C - TO-247-AC. 14.80 (.583) 4.30 (.170) 14.20 (.559) 3.70 (.145) LEAD ASSIGNMENTS Hexfet IGBT LEAD ASSIGNMENTS 2.40 (.094) 0.80 (.031) 1.40 (.056) 1 - Gate 1 - Gate 2.00 (.079) 3X 3X

1.171. irf5305.pdf Size:124K _international_rectifier

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PD - 91385B IRF5305 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175C Operating Temperature Fast Switching RDS(on) = 0.06? P-Channel G Fully Avalanche Rated ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance TO-220AB and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Cu

1.172. irf5m4905.pdf Size:115K _international_rectifier

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PD - 94155 HEXFET POWER MOSFET IRF5M4905 THRU-HOLE (TO-254AA) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID -55V 0.03? -35A* IRF5M4905 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS(on) fast switching speed and ruggedized device design Avalanche Energy Ratings that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements Ease of Paralleling These devices are well-suited for applications such Hermetically Sealed as switching power supplies, motor controls, invert- Light Weight ers, choppers, audio amplifiers and high-energy pulse circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = -10V, TC = 25C Continuous Drai

1.173. irhf57z30.pdf Size:129K _international_rectifier

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PD - 93793A RADIATION HARDENED IRHF57Z30 POWER MOSFET 30V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57Z30 100K Rads (Si) 0.045? 12A* IRHF53Z30 300K Rads (Si) 0.045? 12A* IRHF54Z30 600K Rads (Si) 0.045? 12A* IRHF58Z30 1000K Rads (Si) 0.056? 12A* TO-39 International Rectifiers R5TM technology provides Features: high performance power MOSFETs for space appli- Single Event Effect (SEE) Hardened cations. These devices have been characterized for Ultra Low RDS(on) Single Event Effects (SEE) with useful performance Neutron Tolerant up to an LET of 80 (MeV/(mg/cm2)). The combination Identical Pre and Post Electrical Test Conditions of low RDS(on) and low gate charge reduces the power Repetitive Avalanche Ratings losses in switching applications such as DC to DC Dynamic dv/dt Ratings converters and motor control. These devices retain Simple Drive Requirements all of the well establis

1.174. irf530ns.pdf Size:178K _international_rectifier

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PD - 91352A IRF530NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175C Operating Temperature RDS(on) = 0.11? G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest D 2 Pak TO-262 possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance

1.175. irf520vs.pdf Size:129K _international_rectifier

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PD - 94306 IRF520VS IRF520VL HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.165? Fast Switching G Fully Avalanche Rated ID = 9.6A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the D2Pak TO-262 lowest possible on-resistance in any existing surface mount package. The IRF520VS IRF520VL D2Pak is suitable for high current applicatio

1.176. irf5nj9540.pdf Size:117K _international_rectifier

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PD - 94038A HEXFET POWER MOSFET IRF5NJ9540 SURFACE MOUNT (SMD-0.5) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ9540 -100V 0.117? -18A Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS(on) fast switching speed and ruggedized device design Avalanche Energy Ratings that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements Ease of Paralleling These devices are well-suited for applications such Hermetically Sealed as switching power supplies, motor controls, invert- Surface Mount ers, choppers, audio amplifiers and high-energy pulse Light Weight circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = -10V, TC =

1.177. irf530s.pdf Size:180K _international_rectifier

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1.178. irf5y5305cm.pdf Size:108K _international_rectifier

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PD - 94028 HEXFET POWER MOSFET IRF5Y5305CM THRU-HOLE (TO-257AA) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y5305CM -55V 0.065? -18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast switching speed and ruggedized device design Low RDS(on) that HEXFET power MOSFETs are well known for, Avalanche Energy Ratings provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements These devices are well-suited for applications such Ease of Paralleling as switching power supplies, motor controls, invert- Hermetically Sealed ers, choppers, audio amplifiers and high-energy pulse Light Weight circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = -10V, TC = 25C Continuous

1.179. irhf597110.pdf Size:129K _international_rectifier

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PD - 94176B RADIATION HARDENED IRHF597110 POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF597110 100K Rads (Si) 1.0? -2.6A IRHF593110 300K Rads (Si) 1.0? -2.6A TO-39 International Rectifiers R5TM technology provides Features: high performance power MOSFETs for space appli- Single Event Effect (SEE) Hardened cations. These devices have been characterized for Ultra Low RDS(on) Single Event Effects (SEE) with useful performance Neutron Tolerant up to an LET of 80 (MeV/(mg/cm2)). The combination Identical Pre- and Post-Electrical Test Conditions of low RDS(on) and low gate charge reduces the power Repetitive Avalanche Ratings losses in switching applications such as DC to DC Dynamic dv/dt Ratings converters and motor control. These devices retain Simple Drive Requirements all of the well established advantages of MOSFETs Ease of Paralleling such as voltage control, fa

1.180. irg4pf50wd.pdf Size:358K _international_rectifier

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PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G 50% reduction of Eoff parameter Low IGBT conduction losses @VGE = 15V, IC = 28A E Latest technology IGBT design offers tighter parameter distribution coupled with n-channel exceptional reliability IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Benefits Lower switching losses allow more cost-effective operation and hence efficient replacement of larger-die MOSFETs up to 100kHz HEXFREDTM diodes optimized for performance with IGBTs. TO-247AC Minimized recovery characteristics reduce noise, EMI and switching losses Absolute Maximum Ratings

1.181. irf540pbf.pdf Size:1312K _international_rectifier

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PD - 94848 IRF540PbF Lead-Free 11/17/03 Document Number: 91021 www.vishay.com 1 IRF540PbF Document Number: 91021 www.vishay.com 2 IRF540PbF Document Number: 91021 www.vishay.com 3 IRF540PbF Document Number: 91021 www.vishay.com 4 IRF540PbF Document Number: 91021 www.vishay.com 5 IRF540PbF Document Number: 91021 www.vishay.com 6 IRF540PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

1.182. irf520v.pdf Size:200K _international_rectifier

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PD - 94092 IRF520V HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.165? G Fast Switching Fully Avalanche Rated ID = 9.6A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Pa

1.183. irf510.pdf Size:175K _international_rectifier

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1.184. irf5y3205cm.pdf Size:103K _international_rectifier

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PD - 94179A HEXFET POWER MOSFET IRF5Y3205CM THRU-HOLE (TO-257AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 0.022? 18A* IRF5Y3205CM 55V Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast switching speed and ruggedized device design Low RDS(on) that HEXFET power MOSFETs are well known for, Avalanche Energy Ratings provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements These devices are well-suited for applications such Ease of Paralleling as switching power supplies, motor controls, invert- Hermetically Sealed ers, choppers, audio amplifiers and high-energy pulse Light Weight circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25C Continuous

1.185. irf530.pdf Size:175K _international_rectifier

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1.186. irf520n.pdf Size:116K _international_rectifier

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PD - 91339A IRF520N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175C Operating Temperature Fast Switching RDS(on) = 0.20? Fully Avalanche Rated G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 TO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS

1.187. irf5m3205.pdf Size:113K _international_rectifier

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PD - 94292A HEXFET POWER MOSFET IRF5M3205 THRU-HOLE (TO-254AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 55V 0.015? 35A* IRF5M3205 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS(on) fast switching speed and ruggedized device design Avalanche Energy Ratings that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements Ease of Paralleling These devices are well-suited for applications such Hermetically Sealed as switching power supplies, motor controls, invert- Light Weight ers, choppers, audio amplifiers and high-energy pulse circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25C Continuous Drain

1.188. irg4cf50wb.pdf Size:29K _international_rectifier

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PD -94307 IRG4CF50WB IRG4CF50WB IGBT Die in Wafer Form C 900 V Size 5 Warp Speed G 6" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 3.11V Max. IC = 10A, TJ = 25C, VGE = 15V V(BR)CES Collector-to-Emitter Breakdown Voltage 900V Min. TJ = 25C, ICES = 250A, VGE = 0V VGE(th) Gate Threshold Voltage 3.0V Min., 6.0V Max. VGE = VCE , TJ =25C, IC =250A ICES Zero Gate Voltage Collector Current 250 A Max. TJ = 25C, VCE = 900V IGES Gate-to-Emitter Leakage Current 1.1 A Max. TJ = 25C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Cr-Ni-Ag ( 1kA-2kA-.2.5kA ) Norminal Front Metal Composition, Thickness: 99% Al, 1% Si (4 microns) Dimensions: 0.257" x 0.260" Wafer Diameter: 150mm, with std. < 100 > flat Wafer thickness: .015" + / -.003" Relevant Die Mechanical Dwg. Number 01-5270 Minimum Street Width 100 Microns Reject Ink Dot Size

1.189. irhf57130.pdf Size:113K _international_rectifier

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PD - 93789A RADIATION HARDENED IRHF57130 POWER MOSFET 100V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57130 100K Rads (Si) 0.08? 11.7A IRHF53130 300K Rads (Si) 0.08? 11.7A IRHF54130 600K Rads (Si) 0.08? 11.7A IRHF58130 1000K Rads (Si) 0.10? 11.7A TO-39 International Rectifiers R5TM technology provides Features: high performance power MOSFETs for space appli- Single Event Effect (SEE) Hardened cations. These devices have been characterized for Ultra Low RDS(on) Single Event Effects (SEE) with useful performance Neutron Tolerant up to an LET of 80 (MeV/(mg/cm2)). The combination Identical Pre- and Post-Electrical Test Conditions of low RDS(on) and low gate charge reduces the power Repetitive Avalanche Ratings losses in switching applications such as DC to DC Dynamic dv/dt Ratings converters and motor control. These devices retain Simple Drive Requirements all of the well established

1.190. irf5n3710.pdf Size:116K _international_rectifier

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PD - 94235A HEXFET POWER MOSFET IRF5N3710 SURFACE MOUNT (SMD-1) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 100V 0.028? 45A IRF5N3710 Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS(on) fast switching speed and ruggedized device design Avalanche Energy Ratings that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements Ease of Paralleling These devices are well-suited for applications such Hermetically Sealed as switching power supplies, motor controls, invert- Surface Mount ers, choppers, audio amplifiers and high-energy pulse Light Weight circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25C C

1.191. irf5n3415.pdf Size:117K _international_rectifier

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PD - 94267 HEXFET POWER MOSFET IRF5N3415 SURFACE MOUNT (SMD-1) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 150V 0.042? 37.5A IRF5N3415 Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS(on) fast switching speed and ruggedized device design Avalanche Energy Ratings that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements Ease of Paralleling These devices are well-suited for applications such Hermetically Sealed as switching power supplies, motor controls, invert- Light Weight ers, choppers, audio amplifiers and high-energy pulse circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25C Continuous Drain

1.192. irf5802.pdf Size:127K _international_rectifier

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PD- 94086 IRF5802 SMPS MOSFET HEXFET Power MOSFET VDSS RDS(on) max ID Applications High frequency DC-DC converters ? 150V 1.2? ?@VGS = 10V 0.9A ? ? Benefits Low Gate to Drain Charge to Reduce Switching Losses D 1 6 D Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See D 2 5 D App. Note AN1001) Fully Characterized Avalanche Voltage G 3 4 S and Current TSOP-6 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25C Continuous Drain Current, VGS @ 10V 0.9 ID @ TA = 70C Continuous Drain Current, VGS @ 10V 0.7 A IDM Pulsed Drain Current 7.0 PD @TA = 25C Power Dissipation 2.0 W Linear Derating Factor 0.02 W/C VGS Gate-to-Source Voltage 30 V dv/dt Peak Diode Recovery dv/dt 7.1 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Max. Units R?JA Maximum Junction-to-Ambient 62.5 C/W Notes through a

1.193. irhf57133se.pdf Size:128K _international_rectifier

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PD - 94334A RADIATION HARDENED IRHF57133SE POWER MOSFET 130V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57133SE 100K Rads (Si) 0.1? 10.5A TO-39 International Rectifiers R5TM technology provides Features: high performance power MOSFETs for space appli- Single Event Effect (SEE) Hardened cations. These devices have been characterized for Ultra Low RDS(on) Single Event Effects (SEE) with useful performance Neutron Tolerant up to an LET of 80 (MeV/(mg/cm2)). The combination Identical Pre- and Post-Electrical Test Conditions of low RDS(on) and low gate charge reduces the power Repetitive Avalanche Ratings losses in switching applications such as DC to DC Dynamic dv/dt Ratings converters and motor control. These devices retain Simple Drive Requirements all of the well established advantages of MOSFETs Ease of Paralleling such as voltage control, fast switching, ease of paral- Herme

1.194. irf5850.pdf Size:126K _international_rectifier

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PD - 93947 IRF5850 HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET VDSS = -20V Surface Mount Available in Tape & Reel Low Gate Charge RDS(on) = 0.135? Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where TSOP-6 printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5850 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability. Absolute Maximum Ratings Parameter Max. Units VDS Drain- Source Voltage -20 V ID @ TA = 25C Continuous Drain Current, VGS @ -4.5V -

1.195. irf5nj540.pdf Size:115K _international_rectifier

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PD - 94020A IRF5NJ540 HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ540 100V 0.052? 22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast switching speed and ruggedized device design Low RDS(on) that HEXFET power MOSFETs are well known for, Avalanche Energy Ratings provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements These devices are well-suited for applications such Ease of Paralleling as switching power supplies, motor controls, invert- Hermetically Sealed ers, choppers, audio amplifiers and high-energy pulse Surface Mount circuits. Light Weight Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25

1.196. irf540s.pdf Size:184K _international_rectifier

F5
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1.197. irf510pbf.pdf Size:239K _international_rectifier

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PD - 95364 IRF510PbF Lead-Free 6/10/04 Document Number: 91015 www.vishay.com 1 IRF510PbF Document Number: 91015 www.vishay.com 2 IRF510PbF Document Number: 91015 www.vishay.com 3 IRF510PbF Document Number: 91015 www.vishay.com 4 IRF510PbF Document Number: 91015 www.vishay.com 5 IRF510PbF Document Number: 91015 www.vishay.com 6 IRF510PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045) 0

1.198. irf5852.pdf Size:239K _international_rectifier

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PD - 93999 IRF5852 HEXFET Power MOSFET ?) VDSS RDS(on) max (?) ID ?) ?) ?) Ultra Low On-Resistance Dual N-Channel MOSFET 20 V 0.090@VGS = 4.5V 2.7A Surface Mount 0.120@VGS = 2.5V 2.2A Available in Tape & Reel Low Gate Charge Description These N-channel MOSFETs from International Rectifier G1 1 6 D1 utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This S2 2 5 S1 benefit provides the designer with an extremely efficient device for use in battery and load management G2 3 4 D2 applications. This Dual TSOP-6 package is ideal for applications TSOP-6 Top View where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5852 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability. Absolute Maximum Ratings Parameter Max.

1.199. irf520s.pdf Size:179K _international_rectifier

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1.200. irf540z.pdf Size:173K _international_rectifier

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PD - 94644 IRF540Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 29.5m? 175C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 34A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automo- tive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C 34 A Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C 24 Continuous Drain Current, VGS @ 10V (See Fig. 9) I

1.201. irf5n3205.pdf Size:118K _international_rectifier

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PD - 94302A HEXFET POWER MOSFET IRF5N3205 SURFACE MOUNT (SMD-1) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 55V 0.008? 55A* IRF5N3205 Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS(on) fast switching speed and ruggedized device design Avalanche Energy Ratings that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements Ease of Paralleling These devices are well-suited for applications such Hermetically Sealed as switching power supplies, motor controls, invert- Light Weight ers, choppers, audio amplifiers and high-energy pulse circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25C Continuous Drain C

1.202. irf5m5210.pdf Size:113K _international_rectifier

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PD - 94247 HEXFET POWER MOSFET IRF5M5210 THRU-HOLE (TO-254AA) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID -100V 0.07? -34A IRF5M5210 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS(on) fast switching speed and ruggedized device design Avalanche Energy Ratings that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements Ease of Paralleling These devices are well-suited for applications such Hermetically Sealed as switching power supplies, motor controls, invert- Light Weight ers, choppers, audio amplifiers and high-energy pulse circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = -10V, TC = 25C Continuous Dra

1.203. irf5n5210.pdf Size:118K _international_rectifier

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PD - 94154 HEXFET POWER MOSFET IRF5N5210 SURFACE MOUNT (SMD-1) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID -100V 0.060? -31A IRF5N5210 Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS(on) fast switching speed and ruggedized device design Avalanche Energy Ratings that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements Ease of Paralleling These devices are well-suited for applications such Hermetically Sealed as switching power supplies, motor controls, invert- Surface Mount ers, choppers, audio amplifiers and high-energy pulse Light Weight circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = -10V, TC = 25C

1.204. irf5y3315cm.pdf Size:106K _international_rectifier

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PD - 94268 HEXFET POWER MOSFET IRF5Y3315CM THRU-HOLE (TO-257AA) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y3315CM 150V 0.085? 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast switching speed and ruggedized device design Low RDS(on) that HEXFET power MOSFETs are well known for, Avalanche Energy Ratings provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements These devices are well-suited for applications such Ease of Paralleling as switching power supplies, motor controls, invert- Hermetically Sealed ers, choppers, audio amplifiers and high-energy pulse Light Weight circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25C Continuous D

1.205. irf5nj5305.pdf Size:118K _international_rectifier

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PD - 94033 HEXFET POWER MOSFET IRF5NJ5305 SURFACE MOUNT (SMD-0.5) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ5305 -55V 0.065? -22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS(on) fast switching speed and ruggedized device design Avalanche Energy Ratings that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements Ease of Paralleling These devices are well-suited for applications such Hermetically Sealed as switching power supplies, motor controls, invert- Surface Mount ers, choppers, audio amplifiers and high-energy pulse Light Weight circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = -10V, TC = 2

1.206. irf5n4905.pdf Size:119K _international_rectifier

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PD - 94163 HEXFET POWER MOSFET IRF5N4905 SURFACE MOUNT (SMD-1) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID -55V 0.024? -55A* IRF5N4905 Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS(on) fast switching speed and ruggedized device design Avalanche Energy Ratings that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements Ease of Paralleling These devices are well-suited for applications such Hermetically Sealed as switching power supplies, motor controls, invert- Surface Mount ers, choppers, audio amplifiers and high-energy pulse Light Weight circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = -10V, TC = 25C

1.207. irfaf50.pdf Size:147K _international_rectifier

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PD - 90577 REPETITIVE AVALANCHE AND dv/dt RATED IRFAF50 900V, N-CHANNEL HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAF50 900V 1.6? 6.2? The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resis- tance combined with high transconductance; superior re- TO-3 verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- lished advantages of MOSFETs such as voltage control, Features: very fast switching, ease of paralleling and temperature Repetitive Avalanche Ratings stability of the electrical parameters. Dynamic dv/dt Rating They are well suited for applications such as switching Hermetically Sealed power supplies, motor controls, inverters, choppers, audio Simple Drive Requirements amplifiers and hig

1.208. irf5y3710cm.pdf Size:105K _international_rectifier

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PD - 94178 HEXFET POWER MOSFET IRF5Y3710CM THRU-HOLE (TO-257AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y3710CM 100V 0.035? 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast switching speed and ruggedized device design Low RDS(on) that HEXFET power MOSFETs are well known for, Avalanche Energy Ratings provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements These devices are well-suited for applications such Ease of Paralleling as switching power supplies, motor controls, invert- Hermetically Sealed ers, choppers, audio amplifiers and high-energy pulse Light Weight circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25C Continuous D

1.209. irf520pbf.pdf Size:214K _international_rectifier

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PD - 94850 IRF520PbF Lead-Free 11/25/03 Document Number: 91017 www.vishay.com 1 IRF520PbF Document Number: 91017 www.vishay.com 2 IRF520PbF Document Number: 91017 www.vishay.com 3 IRF520PbF Document Number: 91017 www.vishay.com 4 IRF520PbF Document Number: 91017 www.vishay.com 5 IRF520PbF Document Number: 91017 www.vishay.com 6 IRF520PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

1.210. irf530spbf.pdf Size:1851K _international_rectifier

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PD- 95982 IRF530SPbF Lead-Free 12/21/04 Document Number: 91020 www.vishay.com 1 IRF530SPbF Document Number: 91020 www.vishay.com 2 IRF530SPbF Document Number: 91020 www.vishay.com 3 IRF530SPbF Document Number: 91020 www.vishay.com 4 IRF530SPbF Document Number: 91020 www.vishay.com 5 IRF530SPbF Document Number: 91020 www.vishay.com 6 IRF530SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + - + - dv/dt controlled by RG + ISD controlled by Duty Factor "D" - D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent ISD R

1.211. irf540spbf.pdf Size:1411K _international_rectifier

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PD- 95983 IRF540SPbF Lead-Free 12/21/04 Document Number: 91022 www.vishay.com 1 IRF540SPbF Document Number: 91022 www.vishay.com 2 IRF540SPbF Document Number: 91022 www.vishay.com 3 IRF540SPbF Document Number: 91022 www.vishay.com 4 IRF540SPbF Document Number: 91022 www.vishay.com 5 IRF540SPbF Document Number: 91022 www.vishay.com 6 IRF540SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + - + - dv/dt controlled by RG + ISD controlled by Duty Factor "D" - D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent ISD R

1.212. irf5njz48.pdf Size:116K _international_rectifier

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PD - 94034 IRF5NJZ48 HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJZ48 55V 0.016? 22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast switching speed and ruggedized device design Low RDS(on) that HEXFET power MOSFETs are well known for, Avalanche Energy Ratings provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements These devices are well-suited for applications such Ease of Paralleling as switching power supplies, motor controls, invert- Hermetically Sealed ers, choppers, audio amplifiers and high-energy pulse Surface Mount circuits. Light Weight Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25C

1.213. irhf57230.pdf Size:129K _international_rectifier

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PD - 93788 RADIATION HARDENED IRHF57230 POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57230 100K Rads (Si) 0.22? 7.3A IRHF53230 300K Rads (Si) 0.22? 7.3A IRHF54230 600K Rads (Si) 0.22? 7.3A IRHF58230 1000K Rads (Si) 0.275? 7.3A TO-39 International Rectifiers R5TM technology provides Features: high performance power MOSFETs for space appli- Single Event Effect (SEE) Hardened cations. These devices have been characterized for Ultra Low RDS(on) Single Event Effects (SEE) with useful performance Neutron Tolerant up to an LET of 80 (MeV/(mg/cm2)). The combination Identical Pre- and Post-Electrical Test Conditions of low RDS(on) and low gate charge reduces the power Repetitive Avalanche Ratings losses in switching applications such as DC to DC Dynamic dv/dt Ratings converters and motor control. These devices retain Simple Drive Requirements all of the well established adv

1.214. irhf57234se.pdf Size:178K _international_rectifier

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PD - 93831 RADIATION HARDENED IRHF57234SE POWER MOSFET 250V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57234SE 100K Rads (Si) 0.42? 5.4A TO-39 International Rectifiers R5TM technology provides high performance power MOSFETs for space appli- Features: cations. These devices have been characterized for Single Event Effect (SEE) Hardened Single Event Effects (SEE) with useful performance Ultra Low RDS(on) up to an LET of 80 (MeV/(mg/cm2)). The combination Neutron Tolerant of low RDS(on) and low gate charge reduces the power Identical Pre- and Post-Electrical Test Conditions losses in switching applications such as DC to DC Repetitive Avalanche Ratings converters and motor control. These devices retain Dynamic dv/dt Ratings all of the well established advantages of MOSFETs Simple Drive Requirements such as voltage control, fast switching, ease of paral- Ease of Paralleling leling and t

1.215. irf5y6215cm.pdf Size:103K _international_rectifier

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PD - 94165 HEXFET POWER MOSFET IRF5Y6215CM THRU-HOLE (TO-257AA) 150V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y6215CM -150V 0.29? -11A Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast switching speed and ruggedized device design Low RDS(on) that HEXFET power MOSFETs are well known for, Avalanche Energy Ratings provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements These devices are well-suited for applications such Ease of Paralleling as switching power supplies, motor controls, invert- Hermetically Sealed ers, choppers, audio amplifiers and high-energy pulse Light Weight circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = -10V, TC = 25C Continuous

1.216. irf520ns.pdf Size:185K _international_rectifier

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PD -91340A IRF520NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF520NS) VDSS = 100V Low-profile through-hole (IRF520NL) 175C Operating Temperature RDS(on) = 0.20? Fast Switching G Fully Avalanche Rated ID = 9.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest D 2 Pak TO-262 possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resi

1.217. irf5yz48cm.pdf Size:105K _international_rectifier

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PD - 94019A HEXFET POWER MOSFET IRF5YZ48CM THRU-HOLE (TO-257AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 0.029? 18A* IRF5YZ48CM 55V Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast switching speed and ruggedized device design Low RDS(on) that HEXFET power MOSFETs are well known for, Avalanche Energy Ratings provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements These devices are well-suited for applications such Ease of Paralleling as switching power supplies, motor controls, invert- Hermetically Sealed ers, choppers, audio amplifiers and high-energy pulse Light Weight circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25C Continuous Dr

1.218. irf540.pdf Size:177K _international_rectifier

F5
F5

1.219. irf5y540cm.pdf Size:99K _international_rectifier

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F5
PD - 94017B HEXFET POWER MOSFET IRF5Y540CM THRU-HOLE (TO-257AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y540CM 100V 0.058? 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast switching speed and ruggedized device design Low RDS(on) that HEXFET power MOSFETs are well known for, Avalanche Energy Ratings provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements These devices are well-suited for applications such Ease of Paralleling as switching power supplies, motor controls, invert- Hermetically Sealed ers, choppers, audio amplifiers and high-energy pulse Light Weight circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25C Continuous D

1.220. irf5851.pdf Size:172K _international_rectifier

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F5
PD-93998A IRF5851 HEXFET Power MOSFET l Ultra Low On-Resistance N-Ch P-Ch l Dual N and P Channel MOSFET G1 D1 1 6 l Surface Mount VDSS 20V -20V l Available in Tape & Reel S1 S2 2 5 l Low Gate Charge G2 3 4 D2 RDS(on) 0.090? 0.135? Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5851 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an TSOP-6 increase in current-handling capability. Absolute Maximum Ratings Max. Parameter Units N-Channel P-Channel VDS D

1.221. irf5800.pdf Size:98K _international_rectifier

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F5
PD - 93850 IRF5800 HEXFET Power MOSFET Ultra Low On-Resistance A 1 6 D D P-Channel MOSFET VDSS = -30V Surface Mount 2 5 D D Available in Tape & Reel Low Gate Charge 3 4 G S RDS(on) = 0.085? Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction TSOP-6 enables a current-handling increase of nearly 300% compared to the SOT-23. Absolute Maximum Ratings Parameter Max. Units VDS Drain- Source Voltage -30 V ID @ TA = 25C Continuous Drain Current,

1.222. irf530n.pdf Size:212K _international_rectifier

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PD - 91351 IRF530N HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 90m? G Fast Switching Fully Avalanche Rated ID = 17A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C C

1.223. irf510s.pdf Size:325K _international_rectifier

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PD - 95540 IRF510SPbF Lead-Free SMD-220 7/21/04 Document Number: 91016 www.vishay.com 1 IRF510SPbF Document Number: 91016 www.vishay.com 2 IRF510SPbF Document Number: 91016 www.vishay.com 3 IRF510SPbF Document Number: 91016 www.vishay.com 4 IRF510SPbF Document Number: 91016 www.vishay.com 5 IRF510SPbF Document Number: 91016 www.vishay.com 6 IRF510SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + - + - dv/dt controlled by RG + ISD controlled by Duty Factor "D" - D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curen

1.224. irf5nj3315.pdf Size:115K _international_rectifier

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PD - 94287A HEXFET POWER MOSFET IRF5NJ3315 SURFACE MOUNT (SMD-0.5) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 0.08? 20A IRF5NJ3315 150V Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS(on) fast switching speed and ruggedized device design Avalanche Energy Ratings that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements Ease of Paralleling These devices are well-suited for applications such Hermetically Sealed as switching power supplies, motor controls, invert- Surface Mount ers, choppers, audio amplifiers and high-energy pulse Light Weight circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = -10V, TC =

1.225. irf540ns.pdf Size:125K _international_rectifier

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PD - 91342 IRF540NS IRF540NL Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche Rated RDS(on) = 44m? Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipat

1.226. irgpf50f.pdf Size:110K _international_rectifier

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PD - 9.767A IRGPF50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C Switching-loss rating includes all "tail" losses VCES = 900V Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 2.7V G @VGE = 15V, IC = 28A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high- current applications. TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 900 V IC @ TC = 25C Continuous Collector Current 51 IC @ TC = 100C Continuous Collector Current 28 A ICM Pulsed Collector Current 100 ILM Clamped Inductive Load Current 100 VGE Gate-to-Emitter Voltage 20 V EARV Reverse Voltage Avalanche Energy

1.227. irhf57034.pdf Size:130K _international_rectifier

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PD - 93791 RADIATION HARDENED IRHF57034 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57034 100K Rads (Si) 0.048? 12*A IRHF53034 300K Rads (Si) 0.048? 12*A IRHF54034 600K Rads (Si) 0.048? 12*A IRHF58034 1000K Rads (Si) 0.060? 12*A TO-39 International Rectifiers R5TM technology provides Features: high performance power MOSFETs for space appli- Single Event Effect (SEE) Hardened cations. These devices have been characterized for Ultra Low RDS(on) Single Event Effects (SEE) with useful performance Neutron Tolerant up to an LET of 80 (MeV/(mg/cm2)). The combination Identical Pre- and Post-Electrical Test Conditions of low RDS(on) and low gate charge reduces the power Repetitive Avalanche Ratings losses in switching applications such as DC to DC Dynamic dv/dt Ratings converters and motor control. These devices retain Simple Drive Requirements all of the well established

1.228. irf5803.pdf Size:109K _international_rectifier

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PD-94015 IRF5803 HEXFET Power MOSFET Ultra Low On-Resistance ?) VDSS RDS(on) max (m?) ID ?) ?) ?) P-Channel MOSFET -40V 112@VGS = -10V -3.4A Surface Mount 190@VGS = -4.5V -2.7A Available in Tape & Reel Low Gate Charge Description These P-channel HEXFET Power MOSFETs from A 1 6 D D International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance 2 5 D per silicon area. This benefit provides the designer D with an extremely efficient device for use in battery and load management applications. 3 4 G S The TSOP-6 package with its customized leadframe TSOP-6 Top View produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. Absolute Maximum Ratings Parameter Max. Units

1.229. irf5803d2.pdf Size:127K _international_rectifier

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PD- 94016 IRF5803D2 TM FETKY MOSFET & Schottky Diode Co-packaged HEXFET? Power 1 8 A K MOSFET and Schottky Diode VDSS = -40V 2 7 Ideal For Buck Regulator Applications A K P-Channel HEXFET? 3 6 RDS(on) = 112m? S D Low VF Schottky Rectifier 4 5 G D SO-8 Footprint Schottky Vf = 0.51V Top View Description The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or

1.230. irf5806.pdf Size:218K _international_rectifier

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PD - 93997 IRF5806 HEXFET Power MOSFET Trench Technology VDSS RDS(on) max ID Ultra Low On-Resistance -20V 86m?@VGS = -4.5V -4.0A P-Channel MOSFET 147m?@VGS = -2.5V -3.0A Available in Tape & Reel Description A 1 6 New trench HEXFET Power MOSFETs from D D International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance 2 5 D D per silicon area. This benefit, combined with the ruggedized device design that HEXFET power 3 4 MOSFETs are well known for, provides the designer G S with an extremely efficient and reliable device for use in battery and load management applications. ? Micro6? ? ? ? Top View Absolute Maximum Ratings Parameter Max. Units VDS Drain-Source Voltage -20 V ID @ TA = 25C Continuous Drain Current, VGS @ -4.5V -4.0 ID @ TA = 70C Continuous Drain Current, VGS @ -4.5V -3.3 A IDM Pulsed Drain CurrentQ -16.5 PD @TA = 25C Maximum Power DissipationS 2.0 W PD @TA = 70C Maximum Power Dissipati

1.231. irf5801.pdf Size:120K _international_rectifier

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PD-94044 IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters ? 200V 2.2? 0.6A ? ? ? Benefits A Low Gate to Drain Charge to Reduce 1 6 D D Switching Losses Fully Characterized Capacitance Including 2 5 D D Effective COSS to Simplify Design, (See App. Note AN1001) 3 4 G S Fully Characterized Avalanche Voltage and Current TSOP-6 Top View Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25C Continuous Drain Current, VGS @ 10V 0.6 ID @ TA = 70C Continuous Drain Current, VGS @ 10V 0.48 A IDM Pulsed Drain Current 4.8 PD @TA = 25C Power Dissipation 2.0 W Linear Derating Factor 0.016 W/C VGS Gate-to-Source Voltage 30 V dv/dt Peak Diode Recovery dv/dt 9.6 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units R?JA Junction-to-Ambient 62.5 C

1.232. irf5y31n20.pdf Size:99K _international_rectifier

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PD - 94349A HEXFET POWER MOSFET IRF5Y31N20 THRU-HOLE (TO-257AA) 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y31N20 200V 0.092? 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS(on) fast switching speed and ruggedized device design Avalanche Energy Ratings that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements Ease of Paralleling These devices are well-suited for applications such Hermetically Sealed as switching power supplies, motor controls, invert- Light Weight ers, choppers, audio amplifiers and high-energy pulse circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25C Continuous Dra

1.233. irf5305s.pdf Size:171K _international_rectifier

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PD - 91386C IRF5305S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF5305S) VDSS = -55V Low-profile through-hole (IRF5305L) 175C Operating Temperature RDS(on) = 0.06? Fast Switching G P-Channel ID = -31A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the Pak TO-262 highest power capability and the lowest possible on- D 2 resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal

1.234. irhf57230se.pdf Size:127K _international_rectifier

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PD - 93857A RADIATION HARDENED IRHF57230SE POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57230SE 100K Rads (Si) 0.24? 7.0A TO-39 International Rectifiers R5TM technology provides high performance power MOSFETs for space appli- Features: cations. These devices have been characterized for Single Event Effect (SEE) Hardened Single Event Effects (SEE) with useful performance Ultra Low RDS(on) up to an LET of 80 (MeV/(mg/cm2)). The combination Neutron Tolerant of low RDS(on) and low gate charge reduces the power Identical Pre- and Post-Electrical Test Conditions losses in switching applications such as DC to DC Repetitive Avalanche Ratings converters and motor control. These devices retain Dynamic dv/dt Ratings all of the well established advantages of MOSFETs Simple Drive Requirements such as voltage control, fast switching, ease of paral- Ease of Paralleling leling

1.235. irf5y1310cm.pdf Size:107K _international_rectifier

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PD - 94058 HEXFET POWER MOSFET IRF5Y1310CM THRU-HOLE (TO-257AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y1310CM 100V 0.044? 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast switching speed and ruggedized device design Low RDS(on) that HEXFET power MOSFETs are well known for, Avalanche Energy Ratings provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements These devices are well-suited for applications such Ease of Paralleling as switching power supplies, motor controls, invert- Hermetically Sealed ers, choppers, audio amplifiers and high-energy pulse Light Weight circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25C Continuous D

1.236. irf5805.pdf Size:126K _international_rectifier

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PD -94029 IRF5805 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -30V 0.098@VGS = -10V -3.8A Surface Mount 0.165@VGS = -4.5V -3.0A Available in Tape & Reel Low Gate Charge Description A 1 6 These P-channel MOSFETs from International Rectifier D D utilize advanced processing techniques to achieve the 2 extremely low on-resistance per silicon area. This 5 D D benefit provides the designer with an extremely efficient device for use in battery and load management 3 4 G S applications. The TSOP-6 package with its customized leadframe Top View TSOP-6 produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. Absolute Maximum Ratings Parameter Max. Units VDS Drain-Source Voltage -30 V

1.237. irf520.pdf Size:180K _international_rectifier

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1.238. irg4pf50w.pdf Size:138K _international_rectifier

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PD - 91710 IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features C Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G 50% reduction of Eoff parameter Low IGBT conduction losses @VGE = 15V, IC = 28A E Latest technology IGBT design offers tighter n-channel parameter distribution coupled with exceptional reliability Benefits Lower switching losses allow more cost-effective operation and hence efficient replacement of larger- die MOSFETs up to 100kHz Of particular benefit in single-ended converters and Power Supplies 150W and higher Reduction in critical Eoff parameter due to minimal minority-carrier recombination coupled with low on- state losses allow maximum flexibility in device application TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 900 V

1.239. irf5210s.pdf Size:186K _international_rectifier

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PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF5210S) VDSS = -100V Low-profile through-hole (IRF5210L) 175C Operating Temperature RDS(on) = 0.06? Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in Pak TO-262 any existing surface mount package. The D2Pak is suitable D 2 for high current applications because of its low internal c

1.240. irf5210.pdf Size:125K _international_rectifier

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PD - 91434A IRF5210 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -100V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.06? Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance TO-220AB and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC

1.241. irf5804.pdf Size:99K _international_rectifier

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PD - 94333 IRF5804 HEXFET Power MOSFET Ultra Low On-Resistance ?) VDSS RDS(on) max (m?) ID ?) ?) ?) P-Channel MOSFET -40V 198@VGS = -10V -2.5A Surface Mount 334@VGS = -4.5V -2.0A Available in Tape & Reel Low Gate Charge Description These P-channel HEXFET Power MOSFETs from A 1 6 D D International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance 2 5 D per silicon area. This benefit provides the designer D with an extremely efficient device for use in battery and load management applications. 3 4 G S The TSOP-6 package with its customized leadframe TSOP-6 Top View produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. Absolute Maximum Ratings Parameter Max. Unit

1.242. irf5y9540cm.pdf Size:105K _international_rectifier

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PD - 94027A HEXFET POWER MOSFET IRF5Y9540CM THRU-HOLE (TO-257AA) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y9540CM -100V 0.117? -18A Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast switching speed and ruggedized device design Low RDS(on) that HEXFET power MOSFETs are well known for, Avalanche Energy Ratings provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements These devices are well-suited for applications such Ease of Paralleling as switching power supplies, motor controls, invert- Hermetically Sealed ers, choppers, audio amplifiers and high-energy pulse Light Weight circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = -10V, TC = 25C Continuo

1.243. irf5810.pdf Size:208K _international_rectifier

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PD -94198 IRF5810 HEXFET Power MOSFET Ultra Low On-Resistance ?) VDSS RDS(on) max (m?) ID ?) ?) ?) Dual P-Channel MOSFET -20V 90@VGS = -4.5V -2.9A Surface Mount 135@VGS = -2.5V -2.3A Available in Tape & Reel Low Gate Charge Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications TSOP-6 where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5810 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability. Absolute Maximum Ratings Parameter Max. Units VDS Drain- Source Vo

1.244. irf540n.pdf Size:99K _international_rectifier

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PD - 91341B IRF540N HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 44m? G Fast Switching Fully Avalanche Rated ID = 33A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C

1.245. irf5ea1310.pdf Size:238K _international_rectifier

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PD-93977 HEXFET POWER MOSFET IRF5EA1310 SURFACE MOUNT (LCC-28) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5EA1310 100V 0.036? 23A Fifth Generation HEXFET power MOSFETs from LCC-28 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast switching speed and ruggedized device design Low RDS(on) that HEXFET power MOSFETs are well known for, Avalanche Energy Ratings provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements These devices are well-suited for applications such Ease of Paralleling as switching power supplies, motor controls, invert- Hermetically Sealed ers, choppers, audio amplifiers and high-energy pulse Surface Mount circuits. Light Weight Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25C Co

1.246. irf510a.pdf Size:937K _samsung

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Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.6 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.289 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) 5.6 ID A ? Continuous Drain Current (TC=100 ) 4 1 IDM Drain Current-Pulsed A O 20 VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ O 63 1 IAR Avalanche Current 5.6 A O 1 EAR Repetitive Avalanche Energy O 3.3 mJ 3 dv/dt Peak Diode Recovery dv/dt V/ns O 6.5 ? Total Power Dissipation (TC=25 ) 33 W PD ? Linear Derating Factor W/ 0.22 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range ? Maximum Lead Temp. for S

1.247. irf530a.pdf Size:944K _samsung

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Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.092 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) 14 ID A ? Continuous Drain Current (TC=100 ) 9.9 1 IDM Drain Current-Pulsed A 56 O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ 261 O IAR Avalanche Current 1 14 A O EAR Repetitive Avalanche Energy 1 5.5 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 6.5 O ? Total Power Dissipation (TC=25 ) 55 W PD ? Linear Derating Factor W/ 0.36 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range ? Maximum Lead Temp.

1.248. irf520a.pdf Size:997K _samsung

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Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 Continuous Drain Current (TC=25 ) 9.2 ID A Continuous Drain Current (TC=100 ) 6.5 IDM Drain Current-Pulsed A 37 VGS Gate-to-Source Voltage V 20 EAS Single Pulsed Avalanche Energy mJ 113 IAR Avalanche Current A 9.2 EAR Repetitive Avalanche Energy mJ 4.5 dv/dt Peak Diode Recovery dv/dt V/ns 6.5 Total Power Dissipation (TC=25 ) W 45 PD Linear Derating Factor W/ 0.3 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8? from

1.249. irf540a.pdf Size:951K _samsung

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Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) 28 ID A ? Continuous Drain Current (TC=100 ) 19.8 1 IDM Drain Current-Pulsed A 110 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 523 O IAR Avalanche Current 1 28 A O EAR Repetitive Avalanche Energy 1 10.7 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 6.5 O ? Total Power Dissipation (TC=25 ) 107 W PD ? Linear Derating Factor W/ 0.71 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range ? Maximum Lead Temp

1.250. irf550a.pdf Size:956K _samsung

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Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) 40 ID A ? Continuous Drain Current (TC=100 ) 28.3 1 IDM Drain Current-Pulsed A 160 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 640 O IAR Avalanche Current 1 40 A O EAR Repetitive Avalanche Energy 1 16.7 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 6.5 O ? Total Power Dissipation (TC=25 ) 167 W PD ? Linear Derating Factor W/ 1.11 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range ? Maximum Lead Temp

1.251. bf569w.pdf Size:45K _siemens

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BF 569W PNP Silicon RF Transistor kein Status For oscillators, mixer and self-oscillating mixer stages in UHF TV-tuner Type Marking Ordering Code Pin Configuration Package BF 569W LHs Q62702-F1582 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 35 V Collector-base voltage VCBO 40 Emitter-base voltage VEBO 3 Collector current IC 30 mA Base current IB 5 Total power dissipation Ptot mW TS ? 93 C 280 Junction temperature Tj 150 C Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point RthJS ? 205 K/W Semiconductor Group 1 Nov-28-1996 BF 569W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 35 - - Collector-base cutoff current ICBO nA VCB = 20 , IE = 0 - - 100 DC current gain hFE - IC = 3 mA, VCE = 10 V 20 50 - AC Characteris

1.252. bf506.pdf Size:13K _siemens

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BF 506 PNP Silicon RF Transistor BF 506 For VHF mixer and oscillator stages 2 3 1 Type Marking Ordering Code Pin Configuration Package1) 1 2 3 BF 506 Q62702-F534 C B E TO-92 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 35 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 4 Collector current IC 30 mA Base current IB 5 Total power dissipation, TA ? 45 ?C Ptot 300 mW Junction temperature Tj 150 ?C Storage temperature range Tstg 55 + 150 Thermal Resistance Junction - ambient Rth JA ? 350 K/W 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 BF 506 BF 506 Electrical Characteristics at TA = 25 ?C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR) CE0 35 V IC = 2 mA Collector-base breakdown voltage V(BR) CB0 40 IC = 10 A Emitter-base breakdown voltage V(BR) EB0 4 IE = 10 A Collector c

1.253. bf517.pdf Size:44K _siemens

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BF 517 NPN Silicon RF Transistor For amplifier and oscillator applications in TV-tuners Type Marking Ordering Code Pin Configuration Package BF 517 LRs Q62702-F42 1 = B 2 = E 3 = C SOT-23 Maximum Ratings of any single Transistor Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2.5 Collector current IC 25 mA Peak collector current ICM f ? 10 MHz 50 Total power dissipation Ptot mW TS ? 55 C 280 Junction temperature Tj 150 C Ambient temperature TA - 65 + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 340 K/W 1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm Semiconductor Group 1 Aug-02-1996 BF 517 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 15 - - Collector-base cutoff c

1.254. bf569.pdf Size:37K _siemens

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PNP Silicon RF Transistor BF 569 For oscillators, mixers and self-oscillating mixer stages in UHF TV tuners Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BF 569 LHs Q62702-F869 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 35 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 3 Collector current IC 30 mA Base current IB 5 Total power dissipation, TA ? 25 ?C Ptot 280 mW Junction temperature Tj 150 ?C Storage temperature range Tstg 55 + 150 Thermal Resistance Junction - ambient2) Rth JA ? 450 K/W 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm ? 16.7 mm ? 0.7 mm. 07.94 Semiconductor Group 1 BF 569 Electrical Characteristics at TA = 25 ?C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR) CE0 35 V IC = 1 mA, IB = 0 Collector cutoff current

1.255. bf543.pdf Size:97K _siemens

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Silicon N Channel MOS FET Triode BF 543 Preliminary Data For RF stages up to 300 MHz preferably in FM applications IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BF 543 LDs Q62702-F1372 G D S SOT-23 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 20 V Drain current ID 30 mA Gate-source peak current IGSM 10 Total power dissipation, TA ? 60 ?C Ptot 200 mW Storage temperature range Tstg 55 + 150 ?C Channel temperature Tch 150 Ambient temperature range TA 55 + 150 Thermal Resistance Junction - ambient2) Rth JA ? 450 K/W 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm ? 16.7 mm ? 0.7 mm. 07.94 Semiconductor Group 1 BF 543 Electrical Characteristics at TA = 25 ?C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristic

1.256. umf5n.pdf Size:89K _rohm

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UMF5N Transistors Power management (dual transistors) UMF5N 2SA2018 and DTC144EE are housed independently in a UMT package. Application Dimensions (Units : mm) Power management circuit UMT6 Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. Structure Silicon epitaxial planar transistor Each lead has same dimensions Equivalent circuits (3) (2) (1) DTr2 Tr1 R1 R2 (4) (5) (6) R1=47k? R2=47k? Packaging specifications Type UMF5N Package UMT6 Marking F5 Code TR Basic ordering unit (pieces) 3000 Rev.A 1/4 UMF5N Transistors Absolute maximum ratings (Ta=25C) Tr1 Parameter Symbol Limits Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -12 V Emitter-base voltage VEBO -6 V IC -500 mA Collector current ?1 ICP -1.0 A ?2 Power dissipation PC 150(TOTAL) mW Junction temperature Tj 150 C Range of storage temperature Tstg -55~+150 C ?1 Single pulse PW=1ms

1.257. emf5.pdf Size:84K _rohm

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EMF5 Transistors Power management (dual transistors) EMF5 2SA2018 and DTC144EE are housed independently in a EMT6 package. Application Dimensions (Units : mm) Power management circuit Features (4) ( ) 3 1) Power switching circuit in a single package. (5) (2) 2) Mounting cost and area can be cut in half. (6) (1) 1.2 1.6 Structure Silicon epitaxial planar transistor ROHM : EMT6 Each lead has same dimensions Equivalent circuits Abbreviated symbol : F5 (3) (2) (1) DTr2 Tr1 R1 R2 (4) (5) (6) R1=47k? R2=47k? Packaging specifications Type EMF5 Package EMT6 Marking F5 Code T2R Basic ordering unit (pieces) 8000 Rev.A 1/4 0.5 1.0 1.6 0.22 0.5 0.13 0.5 EMF5 Transistors Absolute maximum ratings (Ta=25C) Tr1 Parameter Symbol Limits Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -12 V Emitter-base voltage VEBO -6 V IC -500 mA Collector current ?1 ICP -1.0 A ?2 Power dissipation PC 150(TOTAL)

1.258. irf530_sihf530.pdf Size:201K _vishay

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IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.16 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 26 COMPLIANT Fast Switching Qgs (nC) 5.5 Ease of Paralleling Qgd (nC) 11 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation D G S levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF530PbF Lead (Pb)-free SiHF530-E3

1.259. irf520_sihf520.pdf Size:201K _vishay

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IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.27 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 16 COMPLIANT Fast Switching Qgs (nC) 4.4 Ease of Paralleling Qgd (nC) 7.7 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation D G S levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF520PbF Lead (Pb)-free SiHF520-E3

1.260. irf540_sihf540.pdf Size:202K _vishay

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IRF540, SiHF540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.077 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 72 COMPLIANT Fast Switching Qgs (nC) 11 Ease of Paralleling Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation D G S levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF540PbF Lead (Pb)-free SiHF540-E3

1.261. irfpf50_sihfpf50.pdf Size:1466K _vishay

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IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.6 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 200 COMPLIANT Fast Switching Qgs (nC) 24 Ease of Paralleling Qgd (nC) 110 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power S D levels preclude the use of TO-220AB devices. The S G TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides N-Channel MOSFET greater creepage distances between pins to meet the requirements of most safety

1.262. irf530s_sihf530s.pdf Size:171K _vishay

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IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) (?)VGS = 10 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 26 Dynamic dV/dt Rating Qgs (nC) 5.5 Repetitive Avalanche Rated 175 C Operating Temperature Qgd (nC) 11 Fast Switching Configuration Single Ease of Paralleling Compliant to RoHS Directive 2002/95/EC D DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides D the highest power capability and the lowest possible G on-resistance in any existing surface mount package. The S S D2PAK (TO-263) is suitable for high current applications N-Channel MOSFET because of it

1.263. mmbf5484lt1.pdf Size:148K _onsemi

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MMBF5484LT1 Preferred Device JFET Transistor N-Channel Features Pb-Free Package is Available http://onsemi.com MAXIMUM RATINGS 2 SOURCE Rating Symbol Value Unit Drain-Gate Voltage VDG 25 Vdc 3 GATE Reverse Gate-Source Voltage VGS(r) 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below PD 1 DRAIN TC = 25C 200 mW Linear Derating Factor 2.8 mW/C Storage Channel Temperature Range Tstg -65 to +150 C 3 SOT-23 (TO-236) THERMAL CHARACTERISTICS CASE 318 1 Characteristic Symbol Max Unit STYLE 10 2 Total Device Dissipation FR-5 Board, PD (Note 1) TA = 25C 225 mW Derate above 25C 1.8 mW/C Thermal Resistance, Junction-to-Ambient RqJA 556 C/W MARKING DIAGRAM Junction and Storage Temperature TJ, Tstg -55 to +150 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. I

1.264. ntf5p03t3g.pdf Size:143K _onsemi

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NTF5P03T3G Power MOSFET 5.2 A, 30 V P-Channel SOT-223 http://onsemi.com Features Ultra Low RDS(on) 5.2 AMPERES, 30 VOLTS Higher Efficiency Extending Battery Life RDS(on) = 100 mW Logic Level Gate Drive Miniature SOT-223 Surface Mount Package Avalanche Energy Specified S This is a Pb-Free Device G Applications DC-DC Converters Power Management Motor Controls D Inductive Loads P-Channel MOSFET Replaces MMFT5P03HD MARKING DIAGRAM 4 & PIN ASSIGNMENT 1 Drain 2 4 3 SOT-223 AYM CASE 318E 5P03 G G STYLE 3 1 2 3 Gate Drain Source A = Assembly Location Y = Year M = Date Code 5P03 = Specific Device Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping 4000 / Tape & NTF5P03T3G SOT-223 Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BR

1.265. nif5003n.pdf Size:105K _onsemi

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NIF5003N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 14 A, Single N-Channel, SOT-223 http://onsemi.com http://onsemi.com HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to VDSS ID MAX achieve the lowest possible on-resistance per silicon area while RDS(on) TYP (Clamped) (Limited) incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature 42 V 53 mW @ 10 V 14 A an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides Drain additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Overvoltage MPWR Gate-to-Source Clamp. Gate Protection RG Input Features Short Circuit Protection/Current Limit ESD Protection Thermal Shutdown with Au

1.266. nif5002n-d.pdf Size:74K _onsemi

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NIF5002N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N-Channel, SOT-223 http://onsemi.com HDPlust devices are an advanced series of power MOSFETs V(BR)DSS which utilize ON Semiconductors latest MOSFET technology process RDS(ON) TYP ID MAX (Clamped) to achieve the lowest possible on-resistance per silicon area while 42 V 165 mW @ 10 V 2.0 A* incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature *Max current limit value is dependent on input an integrated Drain-to-Gate Clamp that enables them to withstand condition. high energy in the avalanche mode. The Clamp also provides Drain additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Overvoltage MPWR Gate-to-Source Clamp. Gate Protection RG Input Features Current Limitation ESD Protection The

1.267. mmbf5460lt1-d.pdf Size:60K _onsemi

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MMBF5460LT1 JFET - General Purpose Transistor P-Channel http://onsemi.com Features Pb-Free Package is Available 2 SOURCE MAXIMUM RATINGS 3 Rating Symbol Value Unit GATE Drain-Gate Voltage VDG 40 Vdc Reverse Gate-Source Voltage VGSR 40 Vdc 1 DRAIN Forward Gate Current IGF 10 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 3 Total Device Dissipation FR-5 Board, PD 1 (Note 1) TA = 25C 225 mW Derate above 25C 1.8 mW/C 2 Thermal Resistance, Junction-to-Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg -55 to +150 C SOT-23 (TO-236) Maximum ratings are those values beyond which device damage can occur. CASE 318 Maximum ratings applied to the device are individual stress limit values (not STYLE 10 normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR-5 = 1.0 x 0.75 x 0.062 in. MARKING DIAGRA

1.268. mmbf5457lt1-d.pdf Size:55K _onsemi

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MMBF5457LT1 Preferred Device JFET - General Purpose Transistor N-Channel http://onsemi.com Features Pb-Free Package is Available 2 SOURCE 3 MAXIMUM RATINGS GATE Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc 1 DRAIN Drain-Gate Voltage VDG 25 Vdc Reverse Gate-Source Voltage VGS(r) -25 Vdc Gate Current IG 10 mAdc THERMAL CHARACTERISTICS 3 SOT-23 (TO-236) Characteristic Symbol Max Unit CASE 318 1 STYLE 10 Total Device Dissipation FR-5 Board PD 225 mW 2 (Note 1) (TA = 25C 1.8 mW/C Derate above 25C Thermal Resistance, RqJA 556 C/W MARKING DIAGRAM Junction-to-Ambient Junction and Storage Temperature TJ, Tstg -55 to +150 C Maximum ratings are those values beyond which device damage can occur. 6 M G Maximum ratings applied to the device are individual stress limit values (not G normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and 1

1.269. emf5xv6t5-d.pdf Size:69K _onsemi

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EMF5XV6T5 Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com Features Simplifies Circuit Design (3) (2) (1) Reduces Board Space Reduces Component Count Q1 These are Pb-Free Devices Q2 MAXIMUM RATINGS R2 R1 Rating Symbol Value Unit (4) (5) (6) Q1 (TA = 25C unless otherwise noted, common for Q1 and Q2) Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc 6 Collector Current IC 100 mAdc Electrostatic Discharge ESD HBM Class 1 1 MM Class B Q2 (TA = 25C) SOT-563 Collector-Emitter Voltage VCEO -12 Vdc CASE 463A PLASTIC Collector-Base Voltage VCBO -15 Vdc Emitter-Base Voltage VEBO -6.0 Vdc Collector Current - Peak IC -1.0 (Note 1) Adc MARKING DIAGRAM -0.5 Collector Current - Continuous Electrostatic Discharge ESD HBM Class 3B MM Class C UY M G THERMAL CHARACTERISTICS G Characteristic 1 (One Junction Heated) Symbol Max Unit T

1.270. uf540.pdf Size:185K _utc

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UNISONIC TECHNOLOGIES CO., LTD UF540 Power MOSFET 27A, 100V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC UF540 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance and high switching speed. The UTC UF540 is suitable for AC&DC motor controls and switching power supply, etc ? FEATURES * RDS(on) <85m? @VGS = 10 V,ID=15A * High Switching Speed ? SYMBOL ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 UF540L-TA3-T UF540G-TA3-T TO-220 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw 1 of 4 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-715.B UF540 Power MOSFET ? ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (Note 2) VDSS 100 V Gate-Source Voltage VGSS ±20 V TC=25°C 27 A Continuous ID Drain Current TC=100°C 17 A Pulsed IDM 108

1.271. ssrf50p04-16.pdf Size:138K _secos

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SSRF50P04-16 50A, -40V, RDS(ON) 16m? P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench ITO-220 process to provide Low RDS(on) and to ensure minimal power loss and heat B N dissipation. Typical applications are DC-DC converters and power management D in portable and battery-powered products such as computers, printers, PCMCIA E cards, cellular and cordless telephones. M A FEATURES ? Low RDS(on) provides higher efficiency and extends battery life. ? Low thermal impedance copper leadframe ITO-220 saves board H J C space. ? Fast switching speed. ? High performance trench technology. K G L L F PRODUCT SUMMARY Dimensions in millimeters SSRF50P04-16 ID(A) VDS(V) RDS(on) (m?? Millimeter Millimeter REF. REF. Min. Max. Min. Max. 16@VGS= -10V 50 A 15.00 15.60 H 3.00 3.80 -40 B 9

1.272. kf630d-s_kf621_kf622_kf520_kf521_kf522_kf523_kf552_kf907_kf910.pdf Size:139K _tesla

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1.273. bc157vi-a_bc158vi-a-b_bc159a-b_bc177v-vi-a-b_bc178v-vi-a-b_bc179a-b_kc307a-b-v_kc308a-b-c_kc309f-b-c_kc636_kc638_kc640_kf423_kf470_kf517.pdf Size:144K _tesla

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1.274. kf124_kf125_bf167_bf173_bf257_bf258_bf259_kf422_bf457_bf458_bf459_kf469_kf503_kf504_kf506_kf507_kf508-a_kf509_kf524_kf525_ks500_sf240_sf245_sf357_sf358_sf359_kf589_kf590.pdf Size:132K _tesla

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1.275. 101nu70-71_102nu70-71_103nu70-71_104nu70-71_105nu70-71_106nu70-71_107nu70-71_gc507_gc508_gc509_gc515_gc516_gc517_gc518_gc519_gf505_gf506_gf507_af106_af109r_af239_af139.pdf Size:166K _tesla

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1.276. buf508a1.pdf Size:153K _cdil

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Q Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR BUF508A TO-220FP Fully Isolated Plastic Package Applications High voltage, high - speed switching transistor in TO - 220FP package envelope intended for use in horizontal deflection of colour television circuits. ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage Peak Value; VBE=O VCESM 1500 V Collector Emitter Voltage VCEO 700 V Collector Current (DC) IC 8.0 A Collector Current (Peak) ICM 15 A Base Current (DC) IB 4.0 A IBM Base Current (Peak) 6.0 A Reverse Base Current - IB(AV) 100 mA (DC or average over any 20ms period) IBM Reverse Base Current *(Peak Value) 5.0 A Power Dissipation upto Tmb=25?C Ptot 60 W Operating & Storage Junction Tj, Tstg -65 to +150 ?C Temperature Range *Turn off current ELECTRICAL CHARACTERISTICS (Tc=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CO

1.277. kf5n50f.pdf Size:395K _kec

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KF5N50P/F/PZ/FZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N50P, KF5N50PZ A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode power supplies. A 9.9 0.2 B B 15.95 MAX Q C 1.3+0.1/-0.05 _ D 0.8 0.1 + I FEATURES _ E 3.6 + 0.2 _ F + ·VDSS= 500V, ID= 5.0A 2.8 0.1 K P 3.7 G ·Drain-Source ON Resistance : RDS(ON)=1.4? @VGS = 10V M H 0.5+0.1/-0.05 L 1.5 I ·Qg(typ) = 12nC J _ + J 13.08 0.3 D K 1.46 _ + L 1.4 0.1 H N N _ + M 1.27 0.1 _ + N 2.54 0.2 MAXIMUM RATING (Tc=25?) _ + O 4.5 0.2 _ + P 2.4 0.2 RATING _ 9.2 0.2 + Q CHARACTERISTIC SYMBOL UNIT 1 2 3 1. GATE KF5N50P KF5N50F 2. DRAIN KF5N50PZ KF5N50FZ 3. SOURCE VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage V

1.278. kf5n53f.pdf Size:1030K _kec

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KF5N53F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ·VDSS= 525V, ID= 5.0A ·Drain-Source ON Resistance : RDS(ON)=1.5? @VGS = 10V ·Qg(typ) = 12nC MAXIMUM RATING (Tc=25?) CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 525 V VGSS Gate-Source Voltage V ±30 @TC=25? 5.0* ID Drain Current @TC=100? 2.9* A IDP Pulsed (Note1) 13* Single Pulsed Avalanche Energy EAS 200 mJ (Note 2) Repetitive Avalanche Energy EAR 4.3 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 4.5 V/ns (Note 3) 37.9 W Tc=25? Drain Power PD Dissipation 0.30 Derate above 25? W/? Tj Maximum Junction Temperature 150 ? Tstg Storage Temperature Range -55?15

1.279. kf5n50dz-iz.pdf Size:404K _kec

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KF5N50DZ/IZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N50DZ This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic ballast and switching mode power supplies. _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 0.15 + B FEATURES _ + F 2.30 0.10 G 0.96 MAX ·VDSS= 500V, ID= 4.3A H 0.90 MAX H J _ J 1.80 + 0.20 ·Drain-Source ON Resistance : RDS(ON)=1.4?(Max) @VGS = 10V E _ K 2.30 + 0.10 G N ·Qg(typ) = 12nC _ L 0.50 0.10 + F F M _ + M 0.50 0.10 N 0.70 MIN 1 2 3 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Tc=25?) CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage V ±30 DPAK (1) @TC=25? 4.3 ID Drain Current @TC=100? 2.7 A IDP

1.280. kf5n60p-f.pdf Size:93K _kec

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KF5N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ switching mode power supplies. A 9.9 + 0.2 B B 15.95 MAX Q C 1.3+0.1/-0.05 _ D 0.8 0.1 + I FEATURES _ E 3.6 + 0.2 _ F + ·VDSS= 600V, ID= 4.5A 2.8 0.1 K P 3.7 G ·Drain-Source ON Resistance : RDS(ON)=2.0? @VGS = 10V M H 0.5+0.1/-0.05 L 1.5 I ·Qg(typ) = 12nC J _ + J 13.08 0.3 D K 1.46 _ + L 1.4 0.1 H N N _ + M 1.27 0.1 _ + N 2.54 0.2 MAXIMUM RATING (Ta=25?) _ + O 4.5 0.2 _ + P 2.4 0.2 RATING _ 9.2 + 0.2 Q CHARACTERISTIC SYMBOL UNIT 1 2 3 1. GATE 2. DRAIN KF5N60P KF5N60F 3. SOURCE VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage V ±30 TO-220AB @TC=25? 4.5 4.5* I

1.281. kf5n50pz.pdf Size:401K _kec

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KF5N50PZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode power supplies. A 9.9 0.2 B B 15.95 MAX Q C 1.3+0.1/-0.05 _ D 0.8 0.1 + I FEATURES _ E 3.6 + 0.2 _ F + ·VDSS= 500V, ID= 5.0A 2.8 0.1 K P 3.7 G ·Drain-Source ON Resistance : RDS(ON)=1.4? @VGS = 10V M H 0.5+0.1/-0.05 L 1.5 I ·Qg(typ) = 12nC J _ + J 13.08 0.3 D K 1.46 _ + L 1.4 0.1 H N N _ + M 1.27 0.1 _ + N 2.54 0.2 MAXIMUM RATING (Tc=25?) _ + O 4.5 0.2 _ + P 2.4 0.2 CHARACTERISTIC SYMBOL RATING UNIT _ 9.2 0.2 + Q 1 2 3 1. GATE VDSS Drain-Source Voltage 500 V 2. DRAIN 3. SOURCE VGSS Gate-Source Voltage V ±30 @TC=25? 5.0 ID TO-220AB Drain Current @TC=100? 2.9 A

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KF5N53D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N53D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic ballast and switching mode power supplies. _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 0.15 + B FEATURES _ + F 2.30 0.10 G 0.96 MAX ·VDSS= 525V, ID= 4.1A H 0.90 MAX H J _ J 1.80 + 0.20 ·Drain-Source ON Resistance : RDS(ON)=1.5?(Max) @VGS = 10V E _ K 2.30 + 0.10 G N ·Qg(typ) = 12nC _ L 0.50 0.10 + F F M _ + M 0.50 0.10 N 0.70 MIN O 0.1 MAX 1 2 3 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Tc=25?) O CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 525 V VGSS Gate-Source Voltage V ±30 DPAK (1) @TC=25? 4.1 ID Drain Current @TC=100? 2

1.283. kf5n60d_i.pdf Size:385K _kec

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KF5N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N60D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic ballast and switching mode power supplies. _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 0.15 + B FEATURES _ + F 2.30 0.10 G 0.96 MAX ·VDSS= 600V, ID= 3.5A H 0.90 MAX H J _ J 1.80 + 0.20 ·Drain-Source ON Resistance : RDS(ON)=2.0?(Max) @VGS = 10V E _ K 2.30 + 0.10 G N ·Qg(typ) = 11nC _ L 0.50 0.10 + F F M _ + M 0.50 0.10 N 0.70 MIN O 0.1 MAX 1 2 3 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Tc=25?) O CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage V ±30 DPAK (1) @TC=25? 3.5 ID Drain Current @TC=100?

1.284. kf5n50dz-ds.pdf Size:382K _kec

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KF5N50DZ/DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic ballast and switching mode power supplies. _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 0.15 + B FEATURES _ + F 2.30 0.10 G 0.96 MAX ·VDSS= 500V, ID= 4.3A H 0.90 MAX H J _ J 1.80 + 0.20 ·Drain-Source ON Resistance : RDS(ON)=1.4?(Max) @VGS = 10V E _ K 2.30 + 0.10 G N ·Qg(typ) = 12nC _ L 0.50 0.10 + F F M _ + M 0.50 0.10 ·trr(typ) = 150ns (KF5N50DS) N 0.70 MIN O Max 0.1 ·trr(typ) = 300ns (KF5N50DZ) 1 2 3 MAXIMUM RATING (Tc=25?) O CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage V ±30 DPAK (1) @TC=25? 4.3 ID

1.285. bf599_bfs20.pdf Size:29K _kec

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SEMICONDUCTOR BFS20/BF599 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 MAXIMUM RATING (Ta=25 ) C 1.30 MAX 2 3 D 0.45+0.15/-0.05 CHARACTERISTIC SYMBOL RATING UNIT E 2.40+0.30/-0.20 1 G 1.90 VCBO Collector-Base Voltage 40 V H 0.95 J 0.13+0.10/-0.05 VCEO Collector-Emitter Voltage 25 V K 0.00 ~ 0.10 L 0.55 P P BFS20 4 M 0.20 MIN VEBO Emitter-Base Voltage V N 1.00+0.20/-0.10 BF599 5 P 7 IC Collector Current 25 mA M IE Emitter Current -25 mA 1. EMITTER PC Collector Power Dissipation 200 mW 2. BASE 3. COLLECTOR Tj Junction Temperature 150 Tstg -65 150 Storage Temperature Range SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT V(BR)CBO Collector-Base Breakdown Voltage IC=10 A, IE=0 40 - - V V(BR)CEO IC=2mA, IB=0 Collector-Emitter Breakdown Voltage 25 - - V BFS20 4 Emitte

1.286. kf5n50fza-fsa.pdf Size:716K _kec

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KF5N50FZA/FSA SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ·VDSS= 500V, ID= 5.0A ·Drain-Source ON Resistance : RDS(ON)=1.4? @VGS = 10V ·Qg(typ) = 12nC ·trr(typ) = 150ns (KF5N50FSA) ·trr(typ) = 300ns (KF5N50FZA) MAXIMUM RATING (Tc=25?) CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage V ±30 @TC=25? 5.0* ID Drain Current @TC=100? 2.9* A IDP Pulsed (Note1) 13* Single Pulsed Avalanche Energy EAS 270 mJ (Note 2) Repetitive Avalanche Energy EAR 8.6 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 20 V/ns (Note 3) 37.9 W Tc=25? Drain Power PD Dissipation 0.30 Derate above 25? W/? Tj Maximum

1.287. kf5n50d_dz.pdf Size:380K _kec

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KF5N50D/DZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 switching mode power supplies. _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 0.15 + B FEATURES _ + F 2.30 0.10 G 0.96 MAX ·VDSS= 500V, ID= 4.3A H 0.90 MAX H J _ J 1.80 + 0.20 ·Drain-Source ON Resistance : RDS(ON)=1.4?(Max) @VGS = 10V E _ K 2.30 + 0.10 G N ·Qg(typ) = 12nC _ L 0.50 0.10 + F F M _ + M 0.50 0.10 N 0.70 MIN O 0.1 MAX MAXIMUM RATING (Tc=25?) 1. GATE CHARACTERISTIC SYMBOL RATING UNIT 1 2 3 2. DRAIN 3. SOURCE VDSS Drain-Source Voltage 500 V O VGSS Gate-Source Voltage V ±30 @TC=25? 4.3 ID Drain Current @TC=100? 2.7 A DPAK (1) IDP Pulsed (Note1) 13 Single

1.288. kf5n60fz.pdf Size:393K _kec

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KF5N60P/F/PZ/FZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N60P, KF5N60PZ A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode power supplies. A 9.9 0.2 B B 15.95 MAX Q C 1.3+0.1/-0.05 _ D 0.8 0.1 + I FEATURES _ E 3.6 + 0.2 _ F + 2.8 0.1 ·VDSS= 600V, ID= 4.5A K P 3.7 G ·Drain-Source ON Resistance : RDS(ON)=2.0? @VGS = 10V M H 0.5+0.1/-0.05 L 1.5 I ·Qg(typ) = 12nC J _ + J 13.08 0.3 D K 1.46 _ + L 1.4 0.1 H N N _ + M 1.27 0.1 _ + N 2.54 0.2 MAXIMUM RATING (Ta=25?) _ + O 4.5 0.2 _ + P 2.4 0.2 RATING _ 9.2 0.2 + Q 1 2 3 CHARACTERISTIC SYMBOL UNIT 1. GATE KF5N60P KF5N60F 2. DRAIN 3. SOURCE KF5N60PZ KF5N60FZ VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage V

1.289. kf5n65p-f.pdf Size:414K _kec

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KF5N65P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N65P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, fast reverse recovery time, low on resistance, low gate F DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for E _ G A 9.9 + 0.2 electronic ballast and switching mode power supplies. B 15.95 MAX B C 1.3+0.1/-0.05 Q _ D 0.8 0.1 + I _ E 3.6 + 0.2 FEATURES _ F + 2.8 0.1 K P G 3.7 ·VDSS= 650V, ID= 5A M H 0.5+0.1/-0.05 L ·Drain-Source ON Resistance : RDS(ON)=1.75?(Max) @VGS = 10V 1.5 I J _ + J 13.08 0.3 ·Qg(typ) = 14.5nC D K 1.46 _ H L 1.4 0.1 + N N _ + M 1.27 0.1 _ + N 2.54 0.2 _ + O 4.5 0.2 _ + P 2.4 0.2 _ 9.2 + 0.2 1. GATE Q 2. DRAIN MAXIMUM RATING (Tc=25?) 3. SOURCE RATING CHARACTERISTIC SYMBOL UNIT KF5N65P KF5N65F VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage V ±30 T

1.290. kf5n50ds.pdf Size:382K _kec

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KF5N50DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic ballast and switching mode power supplies. _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 0.15 + B FEATURES _ + F 2.30 0.10 G 0.96 MAX ·VDSS= 500V, ID= 4.3A H 0.90 MAX H J _ J 1.80 + 0.20 ·Drain-Source ON Resistance : RDS(ON)=1.4?(Max) @VGS = 10V E _ K 2.30 + 0.10 G N ·Qg(typ) = 12nC _ L 0.50 0.10 + F F M _ + M 0.50 0.10 ·trr(typ) = 150nS N 0.70 MIN O Max 0.1 1 2 3 MAXIMUM RATING (Tc=25?) O CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage V ±30 DPAK (1) @TC=25? 4.3 ID Drain Current @TC=100? 2.7 A IDP Pulsed (

1.291. kf5n53dz_ds.pdf Size:382K _kec

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KF5N53DZ/DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic ballast and switching mode power supplies. _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 0.15 + B FEATURES _ + F 2.30 0.10 G 0.96 MAX ·VDSS= 525V, ID= 4.1A H 0.90 MAX H J _ J 1.80 + 0.20 ·Drain-Source ON Resistance : RDS(ON)=1.5?(Max) @VGS = 10V E _ K 2.30 + 0.10 G N ·Qg(typ) = 12nC _ L 0.50 0.10 + F F M _ + M 0.50 0.10 ·trr(typ) = 150ns (KF5N53DS) N 0.70 MIN O 0.1 MAX ·trr(typ) = 300ns (KF5N53DZ) 1 2 3 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Tc=25?) O CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 525 V VGSS Gate-Source Voltage V

1.292. kf5n65d-i.pdf Size:482K _kec

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KF5N65D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N65D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic ballast and switching mode power supplies. _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 0.15 + B FEATURES _ + F 2.30 0.10 G 0.96 MAX ·VDSS= 650V, ID= 4.4A H 0.90 MAX H J _ J 1.80 + 0.20 ·Drain-Source ON Resistance : RDS(ON)=1.75?(Max) @VGS = 10V E _ K 2.30 + 0.10 G N ·Qg(typ) = 14.5nC _ L 0.50 0.10 + F F M _ + M 0.50 0.10 N 0.70 MIN O 0.1 MAX 1 2 3 MAXIMUM RATING (Tc=25?) O CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage V ±30 DPAK (1) @TC=25? 4.4 ID Drain Current @TC=100? 2.7 A KF5N65I IDP Pulse

1.293. kf5n53fs.pdf Size:1030K _kec

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KF5N53FS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ·VDSS= 525V, ID= 5.0A ·Drain-Source ON Resistance : RDS(ON)=1.5? @VGS = 10V ·Qg(typ) = 12nC ·trr(typ) = 150ns MAXIMUM RATING (Tc=25?) CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 525 V VGSS Gate-Source Voltage V ±30 @TC=25? 5.0* ID Drain Current @TC=100? 2.9* A IDP Pulsed (Note1) 13* Single Pulsed Avalanche Energy EAS 270 mJ (Note 2) Repetitive Avalanche Energy EAR 8.6 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 20 V/ns (Note 3) 37.9 W Tc=25? Drain Power PD Dissipation 0.30 Derate above 25? W/? Tj Maximum Junction Temperature 150 ? Tstg Storage Temp

1.294. kf50n06p.pdf Size:63K _kec

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KF50N06P SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ correction , electronic lamp ballasts based on half bridge topology and + A 9.9 0.2 B B 15.95 MAX switching mode power supplies. Q C 1.3+0.1/-0.05 _ I + D 0.8 0.1 _ E 3.6 + 0.2 FEATURES K _ P F 2.8 0.1 + VDSS = 60V, ID = 50A 3.7 G M L 0.5+0.1/-0.05 H Drain-Source ON Resistance : J 1.5 I RDS(ON) =17m (Max.) @VGS = 10V D _ + J 13.08 0.3 1.46 H K N N Qg(typ.) = 39.5nC _ L 1.4 0.1 + _ M 1.27 0.1 + _ N 2.54 0.2 + _ O 4.5 0.2 + MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted) _ P 2.4 0.2 + 1 2 3 1. GATE _ 2. DRAIN Q 9.2 0.2 + CHARACTERISTIC SYMBOL RATING UNIT 3. SOURCE VDSS Drain-Source Vo

1.295. kf5n50ps-fs.pdf Size:90K _kec

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KF5N50PS/FS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N50PS A This planar stripe MOSFET has better characteristics, such as fast O C switching time, fast reverse recovery time, low on resistance, low gate F charge and excellent avalanche characteristics. It is mainly suitable for E DIM MILLIMETERS G _ + electronic ballast and switching mode power supplies. A 9.9 0.2 B B 15.95 MAX Q C 1.3+0.1/-0.05 _ D 0.8 0.1 + I FEATURES _ E 3.6 + 0.2 _ F + ·VDSS= 500V, ID= 5.0A 2.8 0.1 K P 3.7 G ·Drain-Source ON Resistance : RDS(ON)=1.4? @VGS = 10V M H 0.5+0.1/-0.05 L 1.5 I ·Qg(typ) = 12nC J _ + J 13.08 0.3 D K 1.46 ·trr(typ) = 150ns _ + L 1.4 0.1 H N N _ + M 1.27 0.1 _ + N 2.54 0.2 MAXIMUM RATING (Tc=25?) _ + O 4.5 0.2 _ + P 2.4 0.2 RATING _ 9.2 0.2 + Q CHARACTERISTIC SYMBOL UNIT 1 2 3 1. GATE KF5N50PS KF5N50FS 2. DRAIN 3. SOURCE VDSS Drain-Source Voltage 500 V VGSS Gat

1.296. umf5.pdf Size:611K _htsemi

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UMF5N General purpose transistors (dual transistors) FEATURES SOT-363 2SA2018 and DTC144E are housed independently in a package. Mounting possible with SOT-363 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. 1 (3) (2) (1) Marking: F5 DTr2 Tr1 R1 Equivalent circuit R2 (4) (5) (6) Tr1 Absolute maximum ratings (Ta=25?) Symbol Parameter Value Units VCBO Collector-Base Voltage -15 V VCEO Collector-Emitter Voltage -12 V VEBO Emitter-Base Voltage -6 V IC Collector Current -500 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10?A, IE=0 -15 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -12 V Emitter-base breakdown voltage V(BR)EBO

1.297. emf5.pdf Size:547K _htsemi

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EMF5 General purpose transistors (dual transistors) FEATURES 2SA2018 and DTC144E are housed independently in a package. SOT-563 Mounting possible with SOT-563 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. 1 Marking: F5 (3) (2) (1) Equivalent circuit DTr2 Tr1 R1 R2 (4) (5) (6) Tr1 Absolute maximum ratings (Ta=25?) Symbol Parameter Value Units VCBO Collector-Base Voltage -15 V VCEO Collector-Emitter Voltage -12 V VEBO Emitter-Base Voltage -6 V IC Collector Current -500 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10?A, IE=0 -15 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -12 V Emitter-base breakdown voltage V(BR)EBO

1.298. cep540n_ceb540n_cef540n.pdf Size:407K _cet

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CEP540N/CEB540N CEF540N N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS(ON) = 53m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-220 & TO-263 package. G CEB SERIES CEF SERIES CEP SERIES TO-263(DD-PAK) TO-220F S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 36 A Drain Current-Pulsed a IDM 120 A Maximum Power Dissipation @ TC = 25 C 140 W PD - Derate above 25 C 0.91 W/ C Single Pulsed Avalanche Energy d EAS 310 mJ Single Pulsed Avalanche Current d IAS 18 A Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R?JC 1.1 C/W Thermal Resistance, Junction-to-Ambient R?JA 62.5 C/W Rev .3 2008.Oct. . http:/

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CEP540L/CEB540L CEF540L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS(ON) = 50m? @VGS = 10V. RDS(ON) = 53m? @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEF SERIES CEP SERIES TO-263(DD-PAK) TO-220F S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 36 A Drain Current-Pulsed a IDM 120 A Maximum Power Dissipation @ TC = 25 C 140 W PD - Derate above 25 C 0.91 W/ C Single Pulsed Avalanche Energy d EAS 310 mJ Single Pulsed Avalanche Current d IAS 18 A Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R?JC 1.1 C/W Thermal Resistance, Junction-to-Ambient R?JA 62.5 C/W

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF5N50C N- MOS / N-CHANNEL POWER MOSFET SIF5N50C N- MOS / N-CHANNEL POWER MOSFET SIF5N50C N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF5N50C RoHS RoHS ●特点:导通电阻低 开关速度快 输入阻抗高 符合RoHS RoHS规范 FEATURES FEATURES ●FEATURES ■LOW ON-RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE ■RoHS COMPLIANT FEATURES: ●应用:电子镇流器 电子变压器 开关电源 APPLICATION: ●APPLICATION: ■ELECTRONIC BALLAST■ELECTRONIC TRANSFORMER■SWITCH MODE POWER SUPPLY APPLICATION: APPLICATION: Tc=25°C Tc=25°C ●最大额定值(Tc=25°C Tc=25°C) Absolute Maximum Ratings Tc=25°C TO-2

1.301. sif5n50c.pdf Size:340K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF5N50C N- MOS / N-CHANNEL POWER MOSFET SIF5N50C N- MOS / N-CHANNEL POWER MOSFET SIF5N50C N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF5N50C RoHS RoHS ●特点:导通电阻低 开关速度快 输入阻抗高 符合RoHS RoHS规范 FEATURES FEATURES ●FEATURES FEATURES:■LOW ON-RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE ■RoHS COMPLIANT ●应用:电子镇流器 电子变压器 开关电源 APPLICATION: ●APPLICATION: ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER ■SWITCH MODE POWER SUPPLY APPLICATION: APPLICATION: Tc=25°C Tc=25° ●最大额定值(Tc=25°C Tc=25°C C) Absolute Maximum Ratings Tc=25°C T

1.302. sif5n60c.pdf Size:539K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF5N60C N- MOS / N-CHANNEL POWER MOSFET SIF5N60C N- MOS / N-CHANNEL POWER MOSFET SIF5N60C N- MOS / N-CHANNEL POWER MOSFET SIF5N60C RoHS RoHS ●特点:热阻低 开关速度快 输入阻抗高 符合RoHS RoHS规范 FEATURES FEATURES ●FEATURES FEATURES:■LOW THERMAL RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE ■RoHS COMPLIANT ●应用:电子镇流器 电子变压器 开关电源 ●APPLICATION: ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER ■SWITCH MODE POWER SUPPLY APPLICATION: APPLICATION: APPLICATION: TC=25°C TC=25°C ●最大额定值(TC=25°C TC=25°C) ●Absolute Maximum Ratings(Tc=25°

1.303. sif5n65c.pdf Size:474K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF5N65C N- MOS / N-CHANNEL POWER MOSFET SIF5N65C N- MOS / N-CHANNEL POWER MOSFET SIF5N65C N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF5N65C RoHS RoHS ●特点:热阻低 开关速度快 输入阻抗高 符合RoHS RoHS规范 FEATURES FEATURES ●FEATURES FEATURES:■LOW THERMAL RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE ■RoHS COMPLIANT ●应用:电子镇流器 电子变压器 开关电源 APPLICATION: APPLICATION: ●APPLICATION: ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER ■SWITCH MODE POWER SUPPLY APPLICATION: TC=25°C TC=25°C ●最大额定值(TC=25°C TC=25°C) ●Absolute Maximum Ratings(Tc=25°

1.304. sif5n60c_1.pdf Size:474K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF5N60C N- MOS / N-CHANNEL POWER MOSFET SIF5N60C N- MOS / N-CHANNEL POWER MOSFET SIF5N60C N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF5N60C RoHS RoHS ●特点:热阻低 开关速度快 输入阻抗高 符合RoHS RoHS规范 FEATURES FEATURES ●FEATURES FEATURES:■LOW THERMAL RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE ■RoHS COMPLIANT ●应用:电子镇流器 电子变压器 开关电源 APPLICATION: APPLICATION: ●APPLICATION: ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER ■SWITCH MODE POWER SUPPLY APPLICATION: TC=25°C TC=25°C ●最大额定值(TC=25°C TC=25°C) ●Absolute Maximum Ratings(Tc=25°

1.305. sif5n40d.pdf Size:328K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF5N40D N- MOS / N-CHANNEL POWER MOSFET SIF5N40D N- MOS / N-CHANNEL POWER MOSFET SIF5N40D N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF5N40D RoHS RoHS ●特点:导通电阻低 开关速度快 输入阻抗高 符合RoHS RoHS规范 FEATURES FEATURES ●FEATURES FEATURES:■LOW ON-RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE ■RoHS COMPLIANT ●应用:电子镇流器 电子变压器 开关电源 APPLICATION: APPLICATION: ●APPLICATION: ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER ■SWITCH MODE POWER SUPPLY APPLICATION: TC=25°C TC=25°C ●最大额定值(TC=25°C TC=25°C) ●Absolute Maximum Ratings(Tc=25

1.306. mtf50p02j3.pdf Size:288K _cystek

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Spec. No. : C784J3 Issued Date : 2011.04.06 CYStech Electronics Corp. Revised Date : Page No. : 1/7 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -20V MTF50P02J3 ID -10A 58mΩ RDSON(MAX) Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package Equivalent Circuit Outline MTF50P02J3 TO-252 G:Gate D:Drain G D S S:Source Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 Continuous Drain Current @ TC=25°C -10 ID Continuous Drain Current @ TC=100°C -6.5 A Pulsed Drain Current *1 IDM -40 Total Power Dissipation @TC=25℃ 30 Pd W Total Power Dissipation @TC=100℃ 10 Operating Junction and Storage Temperature Range Tj, Tstg -55~+175 °C Note : *1. Pulse width limited by maximum junction temperature MTF50P02J3 CYStek Product Specification Spec. No. : C784J3 Issued

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