Répertoire mondial des transistors gratuit

 

F5 - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors

Marquage composant: F5

Matériau utilisé: Si

Polarité du transistor: NPN

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.15

Tension collecteur–base (maximale) Ucb: 50

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 25

Tension émetteur–base (maximale) Ueb: 0

Courant collecteur maximal (Ic): 0.05

Température maximale de jonction (Tj), °C: 125

Fréquence maximale de fonctionnement fT: 250

Capacite collecteur (Cc), pF: 2.5

Gain en courant DC hFE (hfe): 135

Boitier:

Recherche équivalences (un remplaçant pour le transistor F5 )

F5 PDF:

1.1. mrf5007r.pdf Size:158K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor NChannel EnhancementMode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for largesignal, common source

1.2. irf540_mot.pdf Size:144K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Advance Information IRF540 TMOS E-FET.? Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a draintosource d

1.3. mrf555re.pdf Size:99K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF555/D The RF Line NPN Silicon MRF555 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) 1.5 W, 470 MHz Efficiency 60% (Typ) RF LOW POWER Cost Effective P

1.4. mmsf5p02hd.pdf Size:213K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5P02HD/D Designer's? Data Sheet MMSF5P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS? devices are an advanced series of power MOSFETs 8.7 AMPERES which utilize Motorolas High Cell Density HDTMOS process. These 20 VOLTS

1.5. irf530_mot.pdf Size:173K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF530/D Advance Information IRF530 TMOS E-FET.? Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 14 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a draintosource d

1.6. mmbr571lt1_mps571_mrf571_mrf5711lt1.pdf Size:358K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR571LT1/D The RF Line MMBR571LT1 NPN Silicon MPS571 MRF571 High-Frequency Transistors MRF5711LT1 Designed for low noise, wide dynamic range frontend amplifiers and lownoise VCOs. Available in a surfacemountable plastic package, as well as the popular TO226AA (TO92) package. This Motorola series of smallsignal plast

1.7. mtdf5n02z.pdf Size:276K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF5N02Z/D Advance Information MMDF5N02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD DUAL TMOS Protected Gate POWER MOSFET EZFETs? are an advanced series of power MOSFETs which 5.0 AMPERES utilize Motorolas High Cell Density HDTMOS process and contain 20 V

1.8. mrf5003r.pdf Size:206K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5003/D The RF MOSFET Line RF Power Field Effect Transistor NChannel EnhancementMode MRF5003 The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for largesignal, common source amplifier applications in

1.9. mrf553re.pdf Size:94K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF553/D The RF Line NPN Silicon MRF553 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W 1.5 W, 175 MHz Minimum Gain = 11.5 dB RF LOW POWER Efficiency 60% (Typ) TRANSISTOR Cost Effective P

1.10. mrf5943r.pdf Size:69K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5943/D The RF Line NPN Silicon MRF5943, R1, R2 High-Frequency Transistor . . . designed for amplifier, oscillator or frequency multiplier applications in industrial equipment. Suitable for use as a Class A, B or C output driver or predriver stages in VHF and UHF. Low Cost SORF Plastic Surface Mount Package IC = 400 mA

1.11. mmsf5n03z.pdf Size:282K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5N03Z/D Advance Information MMSF5N03Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel with Monolithic Zener ESD SINGLE TMOS Protected Gate POWER MOSFET EZFETs? are an advanced series of power MOSFETs which utilize 5.0 AMPERES Motorolas High Cell Density TMOS process and contain mon

1.12. mrf581re.pdf Size:222K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF581/D The RF Line MRF581 NPN Silicon MRF581A High-Frequency Transistors MRF5812, R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation Distortion IC = 200 mA High Gain LOW NOISE StateoftheArt Technology HIGHFREQUENCY Fine Line Geometry TRANS

1.13. mmdf5n02z.pdf Size:191K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF5N02Z/D Designer's? Data Sheet MMDF5N02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD DUAL TMOS Protected Gate POWER MOSFET 5.0 AMPERES EZFETs? are an advanced series of power MOSFETs which 20 VOLTS utilize Motorolas High Cell Density HDTMOS process and c

1.14. mrf559re.pdf Size:157K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF559/D The RF Line NPN Silicon MRF559 High-Frequency Transistor . . . designed for UHF linear and largesignal amplifier applications. Specified 12.5 Volt, 870 MHz Characteristics Output Power = 0.5 Watts Minimum Gain = 8.0 dB 0.5 W, 870 MHz Efficiency 50% HIGHFREQUENCY S Parameter Data From 250 MHz to 1.5 GHz TR

1.15. mmsf5n02hd.pdf Size:252K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5N02HD/D Designer's? Data Sheet MMSF5N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS? devices are an advanced series of power MOSFETs 5.0 AMPERES which utilize Motorolas High Cell Density HDTMOS process. 20 VOLTS The

1.16. mrf557re.pdf Size:91K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF557/D The RF Line NPN Silicon MRF557 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W 1.5 W, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSISTOR Cost Effectiv

1.17. mmsf5n02hdrev5.pdf Size:293K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5N02HD/D Designer's? Data Sheet MMSF5N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS? devices are an advanced series of power MOSFETs 5.0 AMPERES which utilize Motorolas High Cell Density HDTMOS process. 20 VOLTS The

1.18. mmsf5p02hdrev2.pdf Size:208K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5P02HD/D Designer's? Data Sheet MMSF5P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS? devices are an advanced series of power MOSFETs 8.7 AMPERES which utilize Motorolas High Cell Density HDTMOS process. These 20 VOLTS

1.19. mmbr521lt1_mrf5211lt1.pdf Size:151K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR521LT1/D The RF Line PNP Silicon MMBR521LT1 High-Frequency Transistor MRF5211LT1 Designed primarily for use in the highgain, lownoise smallsignal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times. High Current GainBandwidth Product IC = 70 mA fT = 3.4 GHz (Typ) @

1.20. mmdf5n02zrev1.pdf Size:186K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF5N02Z/D Designer's? Data Sheet MMDF5N02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD DUAL TMOS Protected Gate POWER MOSFET 5.0 AMPERES EZFETs? are an advanced series of power MOSFETs which 20 VOLTS utilize Motorolas High Cell Density HDTMOS process and c

1.21. mrf5015r.pdf Size:138K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor NChannel EnhancementMode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for largesignal, common source amplifier applications in 12.5 volt mob

1.22. mrf587re.pdf Size:155K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF587/D The RF Line NPN Silicon MRF587 High-Frequency Transistor . . . designed for use in highgain, lownoise, ultralinear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. Low Noise Figure NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA NF = 3.0 dB @ 0.5 GHz High Power Gain

1.23. mrf5015rev6d.pdf Size:154K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor NChannel EnhancementMode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for largesignal, common source amplifier applications in 12.5 volt mob

1.24. mrf5811l.pdf Size:155K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5811LT1/D The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor Designed for high current, low power amplifiers up to 1.0 GHz. IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISE HIGHFREQUENCY Low Intermodulation Distortion TRANSISTOR High Gain NPN SILICON StateoftheArt Technology Fine Line Geometry

1.25. mrf5583r.pdf Size:67K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5583/D The RF Line PNP Silicon MRF5583 High-Frequency Transistor . . . designed for amplifier, oscillator or frequency multiplier applications in industrial equipment. Suitable for use as a Class A, B or C output driver or predriver stages in VHF and UHF. Low Cost SORF Plastic Surface Mount Package IC = 500 mA Guara

1.26. mmsf5n03hdrev5.pdf Size:294K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5N03HD/D Designer's? Data Sheet MMSF5N03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS? devices are an advanced series of power MOSFETs 5.0 AMPERES which utilize Motorolas High Cell Density HDTMOS process. 30 VOLTS The

1.27. mrf5007rev2.pdf Size:161K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 NChannel EnhancementMode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for largesignal, comm

1.28. mmbf5457lt1rev0d.pdf Size:103K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF5457LT1/D JFET General Purpose MMBF5457LT1 Transistor NChannel 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 31808, STYLE 10 SOT23 (TO236AB) DrainSource Voltage VDS 25 Vdc DrainGate Voltage VDG 25 Vdc Reverse GateSource Voltage VGS(r) 25 Vdc Gate Current IG 10 mAdc THERMAL CH

1.29. mrf5035r.pdf Size:142K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5035/D The RF MOSFET Line RF Power Field Effect Transistor NChannel EnhancementMode MRF5035 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for largesignal, common source amplifier applications in 12.5 volt mob

1.30. irf540.rev3.2.pdf Size:142K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Product Preview IRF540 TMOS E-FET.? Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a draintosource diode

1.31. mmsf5n03hd.pdf Size:253K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5N03HD/D Designer's? Data Sheet MMSF5N03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS? devices are an advanced series of power MOSFETs 5.0 AMPERES which utilize Motorolas High Cell Density HDTMOS process. 30 VOLTS The

1.32. mmbf5484lt1rev0d.pdf Size:294K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF5484LT1/D JFET Transistor NChannel MMBF5484LT1 2 SOURCE Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 DrainGate Voltage VDG 25 Vdc Reverse GateSource Voltage VGS(r) 25 Vdc CASE 31808, STYLE 10 Forward Gate Current IG(f) 10 mAdc SOT23 (TO236AB) Continuous Device Dis

1.33. irf530.rev1.1.pdf Size:166K _motorola

F5
F5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF530/D Product Preview IRF530 TMOS E-FET.? Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 14 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a draintosource diode

1.34. bf510_bf511_bf512_bf513_cnv_2.pdf Size:34K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors December 1997 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 DESCRIPTION MARKING CODE Asymmetrical N-channel planar BF510 = S6p epitaxial junction field-effect BF511 = S7p tran

1.35. bf547.pdf Size:109K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION Feedback capacitance typ. 1 pF Low cost NPN transistor in a plastic SOT23 package. Stable oscillator operation High current gain

1.36. bf547_2.pdf Size:76K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION Feedback capacitance typ. 1 pF Low cost NPN transistor in a plastic SOT23 package. Stable oscillator operation High current gain

1.37. bf583_bf585_bf587.pdf Size:63K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF583; BF585; BF587 NPN high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors BF583; BF585; BF587 FEATURES Low feedback capacitance. handbook, halfpage APPLICATIONS For use in video ou

1.38. blf522.pdf Size:71K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET BLF522 UHF power MOS transistor September 1992 Product specification Philips Semiconductors Product specification UHF power MOS transistor BLF522 FEATURES PIN CONFIGURATION High power gain Easy power control halfpage Gold metallization Good thermal stability d Withstands full load mismatch 1 2 Designed for broadband operation. 3 4 g

1.39. blf573_blf573s.pdf Size:331K _philips

F5
F5

BLF573; BLF573S HF / VHF power LDMOS transistor Rev. 3 8 July 2010 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation f VDS PL Gp ?D (MHz) (V) (W) (dB) (%) CW 225 50 300 27.2 70 CA

1.40. blf544.pdf Size:96K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF544 UHF power MOS transistor Product specification 2003 Sep 18 Supersedes data of 1998 Jan 21 Philips Semiconductors Product specification UHF power MOS transistor BLF544 FEATURES PINNING - SOT171A High power gain PIN DESCRIPTION Easy power control 1 source Good thermal stability 2 source Gold metallization ensures excellent rel

1.41. blf544b_cnv_2.pdf Size:75K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET BLF544B UHF push-pull power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF544B FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures lfpage excellent reliability 24 d2 Designed for broadband o

1.42. bf547w.pdf Size:67K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET BF547W NPN 1 GHz wideband transistor June 1994 Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547W FEATURES DESCRIPTION handbook, 2 columns 3 Stable oscillator operation Silicon NPN transistor in a p

1.43. bf545a_bf545b_bf545c.pdf Size:71K _philips

F5
F5

BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 03 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Featu

1.44. bf545a_bf545b_bf545c_2.pdf Size:69K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF545A; BF545B; BF545C field-effect transistors FEATURES Low leakage level (typ. 500 fA) High

1.45. blf574.pdf Size:171K _philips

F5
F5

BLF574 HF / VHF power LDMOS transistor Rev. 02 24 February 2009 Product data sheet 1. Product profile 1.1 General description A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Application information Mode of operation f VDS PL Gp ?D (MHz) (V) (W) (dB) (%) CW 225 50 500 26.5 70 108 50 600 27.5 73 CAUTION

1.46. blf578.pdf Size:320K _philips

F5
F5

BLF578 Power LDMOS transistor Rev. 02 4 February 2010 Product data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Application information Mode of operation f VDS PL Gp ?D (MHz) (V) (W) (dB) (%) CW 108 50 1000 26 75 pulsed RF 225 50 1200 24 71 CAUTION This de

1.47. blf542_cnv_2.pdf Size:80K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF power MOS transistor BLF542 FEATURES PIN CONFIGURATION High power gain halfpage Easy power control Gold metallization Good thermal stability 1 2 Withstands full load mismatch d 3 4 Designed for broadband operation. 5

1.48. blf548_cnv_3.pdf Size:93K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET BLF548 UHF push-pull power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability 1 2 halfpage d2 Designed for broadband

1.49. bf585_bf587.pdf Size:48K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF585; BF587 NPN high-voltage transistors 1999 Apr 21 Product specification Supersedes data of 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors BF585; BF587 FEATURES Low feedback capacitance. handbook, halfpage APPLICATIONS For use in video output stages of black and white and col

1.50. irf530n_1.pdf Size:98K _philips

F5
F5

Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF530N FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 17 A g RDS(ON) ? 110 m? s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel enhancement mode PIN DESCRIPTION tab field-effect power transistor in a

1.51. bf591_bf593.pdf Size:49K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF591; BF593 NPN high-voltage transistors 1997 Jul 02 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors BF591; BF593 FEATURES PINNING Low current (max. 150 mA) PIN DESCRIPTION High voltage (max. 210 V). 1 emitter 2 c

1.52. blf546_cnv_2.pdf Size:72K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET BLF546 UHF push-pull power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability handbook, halfpage 1 4 d Designed for

1.53. bf588.pdf Size:63K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF588 PNP high-voltage transistor 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistor BF588 FEATURES Low feedback capacitance. handbook, halfpage APPLICATIONS For use in video output stages of black and white

1.54. bf556a_bf556b_bf556c_2.pdf Size:68K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF556A; BF556B; BF556C field-effect transistors FEATURES Low leakage level (typ. 500 fA) handboo

1.55. irf540_s_1.pdf Size:88K _philips

F5
F5

Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF540, IRF540S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 23 A g RDS(ON) ? 77 m? s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using trench technolo

1.56. blf544_cnv_2.pdf Size:94K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF544 UHF power MOS transistor 1998 Jan 21 Product specification Supersedes data of October 1992 Philips Semiconductors Product specification UHF power MOS transistor BLF544 FEATURES PINNING - SOT171A High power gain PIN SYMBOL DESCRIPTION Easy power control 1 s source Good thermal stability 2 s source Gold metallization ensures

1.57. bf545a.pdf Size:100K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF545A; BF545B; BF545C field-effect transistors FEATURES Low leakage level (typ. 500 fA) High

1.58. bf550.pdf Size:94K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET BF550 PNP medium frequency transistor Product data sheet 2004 Jan 16 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet PNP medium frequency transistor BF550 FEATURES PINNING Low current (max. 25 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Medium frequency applications in thick

1.59. bf570.pdf Size:105K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET BF570 NPN medium frequency transistor Product data sheet 2004 Mar 15 Supersedes data of 2004 Jan 13 NXP Semiconductors Product data sheet NPN medium frequency transistor BF570 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 15 V) 1 base Low feedback capacitance (max. 2.2 pF). 2 emitter 3 collector APPLICATIONS

1.60. blf545.pdf Size:75K _philips

F5
F5

DISCRETE SEMICONDUCTORS DATA SHEET BLF545 UHF push-pull power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability handbook, halfpage 1 4 d Designed for

1.61. blf542.pdf Size:104K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF542 UHF power MOS transistor Product specification 2003 Sep 18 Supersedes data of 1998 Jan 08 Philips Semiconductors Product specification UHF power MOS transistor BLF542 FEATURES PINNING - SOT171A High power gain PIN DESCRIPTION Easy power control 1 source Good thermal stability 2 source Gold metallization ensures excellent rel

1.62. blf521.pdf Size:85K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET M3D079 BLF521 UHF power MOS transistor Product specification 2003 Sep 02 Supersedes data of 1998 Jan 07 Philips Semiconductors Product specification UHF power MOS transistor BLF521 FEATURES PIN CONFIGURATION High power gain ook, halfpage Easy power control 1 Gold metallization Good thermal stability d 2 3 Withstands full load mismatch

1.63. blf521_cnv_4.pdf Size:71K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BLF521 UHF power MOS transistor November 1992 Product specification Philips Semiconductors Product specification UHF power MOS transistor BLF521 FEATURES PIN CONFIGURATION High power gain ook, halfpage 1 Easy power control Gold metallization Good thermal stability d 2 3 Withstands full load mismatch g Designed for broadband operatio

1.64. blf548.pdf Size:116K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF548 UHF push-pull power MOS transistor Product specification 2003 Sep 26 Supersedes data of Oct 1992 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability 1 2 Gold metallization ensures halfpage d2 excellent rel

1.65. blf543.pdf Size:76K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BLF543 UHF power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF power MOS transistor BLF543 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability fpage Gold metallization ensures excellent reliability Designed for broadband operation. 1 2 d DESCRIPTION

1.66. bf556a_bf556b_bf556c.pdf Size:71K _philips

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BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 03 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Featu

1.67. blf573s.pdf Size:85K _philips

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BLF573S HF / VHF power LDMOS transistor Rev. 02 17 February 2009 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation f VDS PL Gp ?D (MHz) (V) (W) (dB) (%) CW 225 50 300 27.2 70 CAUTI

1.68. blf546.pdf Size:91K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET M3D092 BLF546 UHF push-pull power MOS transistor Product specification 2003 Sep 22 Supersedes data of 1998 Jan 09 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability handb

1.69. blf571.pdf Size:105K _philips

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BLF571 HF / VHF power LDMOS transistor Rev. 02 24 February 2009 Product data sheet 1. Product profile 1.1 General description A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band. Table 1. Production test performance Mode of operation f VDS PL Gp ?D (MHz) (V) (W) (dB) (%) CW 225 50 20 27.5 70 CAUTION This device is sensitive to Elec

1.70. bf556a.pdf Size:100K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF556A; BF556B; BF556C field-effect transistors FEATURES Low leakage level (typ. 500 fA) handboo

1.71. bf550_3.pdf Size:46K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF550 PNP medium frequency transistor 1999 Apr 15 Product specification Supersedes data of 1997 Jul 07 Philips Semiconductors Product specification PNP medium frequency transistor BF550 FEATURES PINNING Low current (max. 25 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Medium

1.72. bf588_3.pdf Size:48K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF588 PNP high-voltage transistor 1999 Apr 12 Product specification Supersedes data of 1996 Dec 09 Philips Semiconductors Product specification PNP high-voltage transistor BF588 FEATURES Low feedback capacitance. handbook, halfpage APPLICATIONS For use in video output stages of black and white and 2 colour televisio

1.73. bf570_cnv_2.pdf Size:49K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BF570 NPN medium frequency transistor 1997 Mar 04 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium frequency transistor BF570 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 15 V) 1 base L

1.74. blf547.pdf Size:94K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BLF547 UHF push-pull power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability 1 2 halfpage d2 Designed for broadband

1.75. bf510_bf511_bf512_bf513.pdf Size:234K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 DESCRIPTION MARKING CODE Asymmetrical N-channel planar BF510 = S6p epitaxial junction field-effect BF511 = S7p transistors in the miniature plastic BF512 =

1.76. pmbf5484_pmbf5485_pmbf5486_cnv_2.pdf Size:72K _philips2

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DISCRETE SEMICONDUCTORS DATA SHEET PMBF5484; PMBF5485; PMBF5486 N-channel field-effect transistors April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBF5484; N-channel field-effect transistors PMBF5485; PMBF5486 FEATURES Low noise Interchangeability of drain and source connections High gain. 3 handbook,

1.77. stb80nf55l.pdf Size:395K _st

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STB80NF55L-06 STP80NF55L-06 N-CHANNEL 55V - 0.005 ? - 80A D?PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF55L-06 55 V < 0.0065 ? 80 A STP80NF55L-06 55 V < 0.0065 ? 80 A TYPICAL RDS(on) = 0.005 ? LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE 3 SURFACE-MOUNTING D2PAK (TO-263) 1 3 2 POWER PACKAGE IN TUBE (NO SUFFIX) OR 1 D2PAK IN TAPE & REEL (SUFFIX T4) TO-220

1.78. irf520.pdf Size:297K _st

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IRF520 N-CHANNEL 100V - 0.115 ? - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE VDSS RDS(on) ID IRF520 100 V <0.27 ? 10 A TYPICAL RDS(on) = 0.115? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 2 175 oC OPERATING TEMPERATURE 1 DESCRIPTION TO-220 This MOSFET series realized with STMicroelectronics unique STripFET proce

1.79. stp5nk90z_stf5nk90z.pdf Size:396K _st

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STP5NK90Z STF5NK90Z N-channel 900V - 2? - 4.5A - TO-220/TO-220FP Zener - Protected SuperMESH MOSFET General features VDSS Type RDS(on) ID PW (@Tjmax) STP5NK90Z 900 V < 2.5 ? 4.5 A 125W STF5NK90Z 900 V < 2.5 ? 4.5 A(1) 30W 3 1. Limited only by maximum temperature allowed 2 1 Extremely high dv/dt capability TO-220 TO-220FP Improved esd capability 100% avalanche rated Gate

1.80. stb85nf55.pdf Size:376K _st

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STB85NF55 STP85NF55 N-CHANNEL 55V - 0.0062 ? - 80A D2PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB85NF55 55 V <0.008 ? 80 A STP85NF55 55 V <0.008 ? 80 A TYPICAL RDS(on) = 0.0062 ? FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 3 2 D2PAK DESCRIPTION 1 TO-263 This Power MOSFET is the latest development of (Suffix T4) TO-220 STMicroelectronis unique "Single

1.81. stp80pf55.pdf Size:104K _st

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STP80PF55 P-CHANNEL 55V - 0.016 ? - 80A TO-220 STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STB80PF55 55 V < 0.018 ? 80 A TYPICAL RDS(on) = 0.016 ? EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 3 2 1 DESCRIPTION This Power MOSFET is the latest development of TO-220 STMicroelectronis unique "Single Feature Size" s

1.82. irf530fp.pdf Size:77K _st

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IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID IRF530FP 100 V < 0.16 ? 10 A TYPICAL R = 0.12 ? DS(on) 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY APPLICATION ORIENTED 3 CHARACTERIZATION 2 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE TO-220FP APPLICATIONS HIGH CURRENT,

1.83. irf530.pdf Size:53K _st

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IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID IRF530 100 V < 0.16 ? 16 A IRF530FI 100 V < 0.16 ? 11 A TYPICAL R = 0.12 ? DS(on) AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 3 HIGH CURRENT CAPABILITY 2 2 175oC OPERATING TEMPERATURE 1 1 APPLICATION ORIENTED CHARACTERIZATION T

1.84. std55n4f5.pdf Size:777K _st

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STD55N4F5 N-channel 40 V, 7.3 m?, 40 A, DPAK STripFET V Power MOSFET Features RDS(on) Type VDSS ID Pw max STD55N4F5 40 V < 8.5 m? 55 A 60 W Standard threshold drive 3 1 100% avalanche tested DPAK Surface mounting DPAK (TO-252) Applications Switching applications Automotive Figure 1. Internal schematic diagram Description The STD55N4F5 is a N-channel STripFETTM V. D

1.85. sts15n4llf5.pdf Size:578K _st

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STS15N4LLF5 N-channel 40 V, 0.00625 ?, 15 A, SO-8 STripFET Power MOSFET Features Type VDSS RDS(on) max. ID STS15N4LLF5 40 V < 0.0076 ? 15 A Optimal RDS(on)x Qg trade-off @ 4.5 V Conduction losses reduced Switching losses reduced SO-8 Applications Switching application Description Figure 1. Internal schematic diagram This STripFETV Power MOSFET technology is among the lat

1.86. stf5n52u_std5n52u.pdf Size:757K _st

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STD5N52U STF5N52U N-channel 525 V, 1.28 ?, 4.4 A, DPAK, TO-220FP UltraFASTmesh Power MOSFET Features RDS(on) Type VDSS ID Pw max STD5N52U 525 V < 1.5 ? 4.4 A 70 W STF5N52U 525 V < 1.5 ? 4.4 A 25 W 3 3 2 100% avalanche tested 1 1 DPAK Outstanding dv/dt capability TO-220FP Gate charge minimized Very low intrinsic capacitances Very low RDS(on) Extremely low trr Appl

1.87. stb150nf55_stp150nf55_stw150nf55.pdf Size:564K _st

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STB150NF55 STP150NF55 - STW150NF55 N-channel 55V - 0.005? - 120A - D2PAK/TO-220/TO-247 STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB150NF55 55V <0.006? 120A(1) 3 1 STP150NF55 55V <0.006? 120A(1) 3 2 1 STW150NF55 55V <0.006? 120A(1) D2PAK TO-220 1. Current limited by package 100% avalanche tested Description TO-247 This Power MOSFET is the latest developm

1.88. stp80nf55l-08_stb80nf55l-08_stb80nf55l-08-1.pdf Size:195K _st

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STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065? - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP80NF55L-08 55 V 0.008? 80 A STB80NF55L-08 55 V 0.008? 80 A STB80NF55L-08-1 55 V 0.008? 80 A 3 3 1 TYPICAL RDS(on) = 0.0065? 2 1 D2PAK LOW THRESHOLD DRIVE TO-220 LOGIC LEVEL DEVICE 3 2 1 I2PAK DESCRIPTION This P

1.89. stb80nf55-08t4_stp80nf55-08_stw80nf55-08.pdf Size:362K _st

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STB80NF55-08T4 STP80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 ?, 80 A, TO-220, D2PAK, TO-247 STripFET Power MOSFET Features RDS(on) Type VDSS ID max 3 STB80NF55-08T4 55 V < 0.008 ? 80 A 2 3 1 2 STP80NF55-08 55 V < 0.008 ? 80 A 1 TO-247 TO-220 STW80NF55-08 55 V < 0.008 ? 80 A Standard threshold drive 3 Application 1 D?PAK Switching applications Description Figure 1.

1.90. std5n95k3_stf5n95k3_stp5n95k3_stu5n95k3.pdf Size:789K _st

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STD5N95K3, STF5N95K3 STP5N95K3, STU5N95K3 N-channel 950 V, 3 ?, 4 A, DPAK, TO-220, TO-220FP, IPAK Zener-protected SuperMESH3 Power MOSFET Features Type VDSS RDS(on) max ID Pw STD5N95K3 950 V < 3.5 ? 4 A 90 W 3 3 2 2 1 1 STF5N95K3 950 V < 3.5 ? 4 A 25 W TO-220 TO-220FP STP5N95K3 950 V < 3.5 ? 4 A 90 W STU5N95K3 950 V < 3.5 ? 4 A 90 W 100% avalanche tested 3 2 3 Extremely la

1.91. stl140n4llf5.pdf Size:239K _st

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STL140N4LLF5 N-channel 40 V, 0.00275 ?, 32 A, PowerFLAT (5x6) STripFET V Power MOSFET Preliminary data Features RDS(on) Type VDSS ID max STL140N4LLF5 40 V 0.00275 ? 32 A (1) 1. The value is rated according Rthj-pcb. RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) PowerFLAT ( 5x6 ) High avalanche ruggedness Low gate drive power losses Application Sw

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STL70N4LLF5 N-channel 40 V, 0.0055 ?, 18 A, PowerFLAT (6x5) STripFET V Power MOSFET Preliminary Data Features RDS(on) Type VDSS ID max STL70N4LLF5 40 V 0.0065 ? 18 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) PowerFLAT ( 6x5 ) High avalanche ruggedness Low gate drive power losses Application Switchi

1.93. stb140nf55_stb140nf55-1_stp140nf55.pdf Size:481K _st

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STB140NF55 - STB140NF55-1 STP140NF55 N-channel 55V - 0.0065? - 80A - D2PAK - I2PAK - TO-220 STripFET II Power MOSFET General features Type VDSS RDS(on) ID (1) STB140NF55 55V <0.008? 80A STB140NF55-1 55V <0.008? 80A STP140NF55 55V <0.008? 80A 3 3 3 2 1. Current limited by package 1 2 1 1 D?PAK TO-220 I?PAK Description This Power MOSFET is the latest development of STMicroelect

1.94. stp80nf55l-08.pdf Size:339K _st

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STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065? - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP80NF55L-08 55 V 0.008? 80 A STB80NF55L-08 55 V 0.008? 80 A STB80NF55L-08-1 55 V 0.008? 80 A 3 3 1 TYPICAL RDS(on) = 0.0065? 2 1 D2PAK LOW THRESHOLD DRIVE TO-220 LOGIC LEVEL DEVICE 3 2 1 I2PAK DESCRIPTION This Po

1.95. std60nf55l.pdf Size:455K _st

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STD60NF55L N-CHANNEL 55V - 0.012? - 60A DPAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STD60NF55L 55V < 0.015? 60A TYPICAL RDS(on) = 0.012? LOW THRESHOLD DRIVE ADD SUFFIX T4 FOR ORDERING IN TAPE & 3 REEL 1 DPAK DESCRIPTION TO-252 This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting tran- sistor

1.96. stp80nf55-07.pdf Size:36K _st

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STP80NF55-07 ? N - CHANNEL 55V - 0.0055? - 80A - TO-220 STripFET? POWER MOSFET TARGET DATA TYPE VDSS RDS(on) ID STP80NF55-07 55 V <0.07 ? 80 A TYPICAL R = 0.0055 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 3 DESCRIPTION 2 This Power MOSFET is the second generation of 1 STMicroelectronics unique Single Feature Size st

1.97. stl15dn4f5.pdf Size:775K _st

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STL15DN4F5 Dual N-channel 40 V, 8 m?, 15 A PowerFLAT(5x6) double island, STripFET V Power MOSFET Features RDS(on) Type VDSS ID max. STL15DN4F5 40 V 9 m? 15 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge PowerFLAT (5x6) Low gate drive power losses Double island Application

1.98. stp80nf55.pdf Size:353K _st

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STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 ? - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF55-08/-1 55 V <0.008 ? 80 A STP80NF55-08 55 V <0.008 ? 80 A TYPICAL RDS(on) = 0.0065? 3 LOW THRESHOLD DRIVE 3 1 2 1 DESCRIPTION I2PAK D2PAK TO-262 This Power MOSFET is the latest development of TO-263 STMicroelectronis unique "Single F

1.99. std60nf55l-1.pdf Size:438K _st

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STD60NF55L STD60NF55L-1 N-channel 55V - 0.012? - 60A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD60NF55L-1 55V <0.015? 60A STD60NF55L 55V <0.015? 60A 3 3 Low threshold drive 2 1 1 Description DPAK IPAK This MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor sh

1.100. stb85nf55l.pdf Size:374K _st

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STB85NF55L STP85NF55L N-CHANNEL 55V - 0.0060 ? - 80A D2PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STP85NF55L 55 V <0.008 ? 80 A STB85NF55L 55 V <0.008 ? 80 A TYPICAL RDS(on) = 0.0060 ? LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE 3 1 3 2 D2PAK 1 DESCRIPTION TO-263 This Power MOSFET is the latest development of (Suffix T4) TO-220 STMicroelectronis unique "Single F

1.101. std5n52k3_stf5n52k3_stp5n52k3_stu5n52k3.pdf Size:575K _st

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STD5N52K3, STF5N52K3 STP5N52K3, STU5N52K3 N-channel 525 V, 1.2 ?, 4.4 A, DPAK, IPAK, TO-220, TO-220FP SuperMESH3 Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID Pw STD5N52K3 70 W 3 3 2 2 1 1 STF5N52K3 25 W 525 V < 1.5 ? 4.4 A TO-220 TO-220FP STP5N52K3 70 W STU5N52K3 100% avalanche tested 3 3 2 Extremely large avalanche performance 1 1 Gate charge m

1.102. stp5nk100z_stf5nk100z_stw5nk100z.pdf Size:456K _st

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STP5NK100Z, STF5NK100Z STW5NK100Z N-channel 1000 V, 2.7 ?, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3 Power MOSFET Features VDSS Type RDS(on)max ID (@TJMAX) 3 2 1 STF5NK100Z 1000 V < 3.7 ? 3.5 A TO-220 TO-220FP STP5NK100Z 1000 V < 3.7 ? 3.5 A STW5NK100Z 1000 V < 3.7 ? 3.5 A Extremely high dv/dt capability 100% avalanche tested 3 2 1 Gate charge minimized TO-247 Very

1.103. stb80nf55-06.pdf Size:482K _st

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STB80NF55-06 STP80NF55-06 STP80NF55-06FP N-CHANNEL 55V - 0.005 ? - 80A TO-220/TO-220FP/D2PAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF55-06 55 V <0.0065 ? 80 A STP80NF55-06 55 V <0.0065 ? 80 A STP80NF55-06FP 55 V <0.0065 ? 60 A TYPICAL RDS(on) = 0.005 ? 3 3 1 EXCEPTIONAL dv/dt CAPABILITY 2 1 100% AVALANCHE TESTED D2PAK TO-220FP TO-263 APPLICATION ORIENTED (Suff

1.104. stb5n62k3_std5n62k3_stf5n62k3_stp5n62k3_stu5n62k3.pdf Size:1172K _st

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STB5N62K3, STD5N62K3, STF5N62K3 STP5N62K3, STU5N62K3 N-channel 620 V, 1.28 ?, 4.2 A SuperMESH3 Power MOSFET D?PAK, DPAK,TO-220FP, TO-220 and IPAK Features RDS(on) Order codes VDSS ID Pw max. 3 3 3 2 2 1 STB5N62K3 1 1 70 W STD5N62K3 DPAK TO-220 TO-220FP STF5N62K3 620 V < 1.6 ? 4.2 A 25 W STP5N62K3 70 W STU5N62K3 3 3 2 100% avalanche tested 1 1 IPAK Extremely lar

1.105. stb85nf55_sti85nf55_stp85nf55.pdf Size:945K _st

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STB85NF55, STI85NF55 STP85NF55 N-channel 55 V, 0.0062 ?, 80 A, TO-220, D2PAK, I2PAK STripFET II Power MOSFET Features RDS(on) Type VDSS ID max STB85NF55 55 V < 0.008 ? 80 A STI85NF55 55 V < 0.008 ? 80 A 3 3 STP85NF55 55 V < 0.008 ? 80 A 3 1 2 2 1 1 D?PAK TO-220 I?PAK Exceptional dv/dt capability 100% avalanche tested Applications Switching application Automotive en

1.106. stb5n52k3_std5n52k3_stf5n52k3_stp5n52k3_stu5n52k3.pdf Size:1175K _st

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STB5N52K3, STD5N52K3, STF5N52K3 STP5N52K3, STU5N52K3 N-channel 525 V, 1.2 ?, 4.4 A SuperMESH3 Power MOSFET D?PAK, DPAK, TO-220FP, TO-220, IPAK Features Order codes VDSS RDS(on) max ID Pw STB5N52K3 70 W 3 3 3 2 2 1 STD5N52K3 70 W 1 1 STF5N52K3 525 V < 1.5 ? 4.4 A 25 W TO-220 TO-220FP DPAK STP5N52K3 70 W STU5N52K3 70 W 100% avalanche tested 3 3 2 Extremely high dv/dt capabi

1.107. stb80pf55.pdf Size:175K _st

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STB80PF55 P-CHANNEL 55V - 0.016 ? - 80A D2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STB80PF55 55 V < 0.018 ? 80 A TYPICAL RDS(on) = 0.016 ? EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED 3 CHARACTERIZATION 1 D2PAK DESCRIPTION TO-263 This Power MOSFET is the latest development of (Suffix T4) STMicroelectronis unique "Single

1.108. stb5nk52zd-1_std5nk52zd_stf5nk52zd_stp5nk52zd.pdf Size:776K _st

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STD5NK52ZD, STB5NK52ZD-1 STF5NK52ZD,STP5NK52ZD N-channel 520 V,1.22 ?,4.4 A,TO-220,IPAK,I2PAK,DPAK,TO-220FP Zener-protected SuperMESH Power MOSFET Features RDS(on) Type VDSS ID Pw max 3 2 IPAK 3 STB5NK52ZD-1 520 V < 1.5 ? 4.4 A 70 W 2 1 2 I PAK 1 STD5NK52ZD-1 520 V < 1.5 ? 4.4 A 70 W 3 STD5NK52ZD 520 V < 1.5 ? 4.4 A 70 W 1 STF5NK52ZD 520 V < 1.5 ? 4.4 A 25 W DPAK STP5NK52ZD

1.109. irf540.pdf Size:53K _st

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IRF540 IRF540FI N - CHANNEL100V - 00.50? - 30A - TO-220/TO-220FI POWER MOSFET TYPE VDSS RDS(on) ID IRF540 100 V < 0.077 ? 30 A IRF540FI 100 V < 0.077 ? 16 A TYPICAL R = 0.050 ? DS(on) AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 3 HIGH CURRENT CAPABILITY 2 2 175oC OPERATING TEMPERATURE 1 1 APPLICATION ORIENTED CHAR

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STB80NF55-06 - STB80NF55-06-1 STP80NF55-06 - STP80NF55-06FP N-channel 55V - 0.005? - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB80NF55-06 55V <0.0065? 80A (1) 3 3 2 STB80NF55-06-1 55V <0.0065? 80A(1) 2 1 1 STP80NF55-06 55V <0.0065? 80A (1) TO-220 TO-220FP STP80NF55-06FP 55V <0.0065? 60A (1) 1. Limited by package Exceptiona

1.111. stb141nf55_stb141nf55-1_stp141nf55.pdf Size:362K _st

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STB141NF55 - STB141NF55-1 STP141NF55 N-channel 55V - 0.0065? - 80A - D2PAK - I2PAK - TO-220 STripFET II Power MOSFET Features Type VDSS RDS(on) ID (1) STB141NF55 55V <0.008? 80A STB141NF55-1 55V <0.008? 80A STP141NF55 55V <0.008? 80A 3 3 3 2 1. Current limited by package 1 2 1 1 D?PAK TO-220 I?PAK Description This Power MOSFET is the latest development of STMicroelectronics u

1.112. stb85nf55l_stp85nf55l.pdf Size:931K _st

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STB85NF55L STP85NF55L N-channel 55 V, 0.0060 ?, 80 A, TO-220, D2PAK STripFET II Power MOSFET Features RDS(on) Type VDSS ID max STB85NF55L 55 V < 0.008 ? 80 A STP85NF55L 55 V < 0.008 ? 80 A 3 3 Low threshold drive 2 1 1 D?PAK TO-220 Application Switching applications Description This Power MOSFET is the latest development of Figure 1. Internal schematic diagram STMicroe

1.113. stb150nf55.pdf Size:551K _st

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STB150NF55 STP150NF55 STW150NF55 N-CHANNEL 55V - 0.005 ? -120A D?PAK/TO-220/TO-247 STripFET II POWER MOSFET AUTOMOTIVE SPECIFIC TYPE VDSS RDS(on) ID STB150NF55 55 V <0.006 ? 120 A(**) STP150NF55 55 V <0.006 ? 120 A(**) STP150NF55 55 V <0.006 ? 120 A(**) TYPICAL RDS(on) = 0.005 ? 3 1 SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE D2PAK TO-247 TO-263 DESCRIPTION (Suffix T4) Th

1.114. stb80nf55l-06_stp80nf55l-06.pdf Size:399K _st

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STB80NF55L-06 STP80NF55L-06 N-CHANNEL 55V - 0.005 ? - 80A D?PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF55L-06 55 V < 0.0065 ? 80 A STP80NF55L-06 55 V < 0.0065 ? 80 A TYPICAL RDS(on) = 0.005 ? LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE 3 SURFACE-MOUNTING D2PAK (TO-263) 1 3 2 POWER PACKAGE IN TUBE (NO SUFFIX) OR 1 D2PAK IN TAPE & REEL (SUFFIX T4) TO-220

1.115. stb80pf55_stp80pf55.pdf Size:342K _st

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STB80PF55 STP80PF55 P-channel 55 V, 0.016 ?, 80 A TO-220, D2PAK STripFETTM II Power MOSFET Features Type VDSS RDS(on) ID STP80PF55 55V <0.018? 80A STB80PF55 55V <0.018? 80A 3 Extremely dv/dt capability 3 2 1 1 100% avalanche tested TO-220 D2PAK Application oriented characterization Application Switching applications Description Figure 1. Internal schematic diagram Thes

1.116. irf540-1-2-3-fi.pdf Size:481K _st2

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1.117. std60nf55la.pdf Size:327K _st2

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STD60NF55LA N-channel 55V - 0.012Ω - 60A - DPAK STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD60NF55LA 55V <0.015Ω 60A ■ Low threshold drive 3 1 Description DPAK This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for

1.118. irf530-1-2-3-fi.pdf Size:276K _st2

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1.119. irf520-1-2-3-fi.pdf Size:502K _st2

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1.120. stw80nf55.pdf Size:277K _st2

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STW80NF55-08 N-CHANNEL 55V - 0.0065? - 80A TO-247 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STW80NF55-08 55 V < 0.008 ? 80 A TYPICAL RDS(on) = 0.0065? EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE 3 2 1 DESCRIPTION TO-247 This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size" strip-based process. The resulting

1.121. stw80nf55-06.pdf Size:114K _st2

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STW80NF55-06 N-CHANNEL 55V - 0.005? - 80A TO-247 STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STW80NF55-06 55 V < 0.0065 ? 80 A TYPICAL RDS(on) = 0.005? EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 2 1 TO-247 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size" strip-based process. The resulting tr

1.122. f5h2101.pdf Size:59K _sanyo

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Ordering number : ENA0725 F5H2101 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor F5H2101 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. The F5H2101 consists of two chips whi

1.123. f5h2201.pdf Size:57K _sanyo

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Ordering number : ENA0403 F5H2201 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching F5H2201 Applications Applications High-speed switching applications (switching regulator, driver circuit). Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. T

1.124. r07ds0326ej_rjh60f5dpq.pdf Size:88K _renesas

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Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200 600 V - 40 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tr = 85 ns typ. (at IC = 30 A, VC

1.125. r07ds0587ej_rjp60f5dpm.pdf Size:81K _renesas

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Preliminary Datasheet RJP60F5DPM R07DS0587EJ0100 600 V - 40 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) ? Trench gate and thin wafer technology ? High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate G

1.126. r07ds0055ej_rjh60f5dpk.pdf Size:85K _renesas

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Preliminary Datasheet RJH60F5DPK R07DS0055EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 24, 2010 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tr = 85 ns typ. (at IC = 30 A, VC

1.127. pf5102.pdf Size:26K _fairchild_semi

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PF5102 N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabized amplifiers. Sourced from process 51. See J111 for characteristics. TO-92 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 40 V VGS Gate-Source Voltage -40 V IGF For

1.128. fqp5n50c_fqpf5n50c.pdf Size:879K _fairchild_semi

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TM QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to Fast switchi

1.129. irf530.pdf Size:180K _fairchild_semi

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1.130. fjpf5321.pdf Size:70K _fairchild_semi

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FJPF5321 High Voltage and High Reliability High speed Switching Wide Safe Operating Area TO-220F 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current (D

1.131. irf520a.pdf Size:243K _fairchild_semi

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IRF520A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolut

1.132. mmbf5103.pdf Size:79K _fairchild_semi

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MMBF5103 N-Channel Switch G This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. See J111 for characteristics. S SOT-23 D Mark: 66A 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 40 V VGS Gate-Source

1.133. mmbf5484.pdf Size:754K _fairchild_semi

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2N5484 MMBF5484 2N5485 MMBF5485 2N5486 MMBF5486 G S G TO-92 S SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Uni

1.134. 2n5457_2n5458_2n5459_mmbf5457_mmbf5458_mmbf5459.pdf Size:129K _fairchild_semi

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2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 G S TO-92 G S SOT-23 NOTE: Source & Drain D D are interchangeable Mark: 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbo

1.135. sgf5n150uf.pdf Size:292K _fairchild_semi

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1.136. fdp5n50nzf_fdpf5n50nzf.pdf Size:256K _fairchild_semi

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February 2010 ?TM UniFET-II FDP5N50NZF / FDPF5N50NZF tm N-Channel MOSFET? 500V, 4.2A, 1.75? Features Description RDS(on) = 1.57? ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 9nC) DMOS technology. Low Crss ( Typ. 4pF) This advance technology has be

1.137. fqpf5p20.pdf Size:610K _fairchild_semi

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May 2000 TM QFET QFET QFET QFET FQPF5P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. -3.4A, -200V, RDS(on) = 1.4? @VGS = -10 V This advanced technology has been especially tailored to Low gate charge ( typical 10 nC) minimize on-stat

1.138. fjpf5200.pdf Size:487K _fairchild_semi

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January 2009 FJPF5200 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A. TO-220F High Power Dissipation : 50watts. 1 High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excellent Gain Linearity for lo

1.139. fqpf50n06.pdf Size:630K _fairchild_semi

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May 2001 TM QFET FQPF50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 60V, RDS(on) = 0.022? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailored to Fast swit

1.140. fqp5n60c_fqpf5n60c.pdf Size:858K _fairchild_semi

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TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to Fast swi

1.141. fdp5n50_fdpf5n50.pdf Size:265K _fairchild_semi

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December 2007 UniFETTM FDP5N50 / FDPF5N50 tm N-Channel MOSFET 500V, 5A, 1.4? Features Description RDS(on) = 1.15? ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially

1.142. fdpf51n25rdtu.pdf Size:650K _fairchild_semi

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August 2014 FDP51N25 / FDPF51N25 N-Channel UniFETTM MOSFET 250 V, 51 A, 60 mΩ Features Description • RDS(on) = 48 mΩ (Typ.) @ VGS = 10 V, ID = 25.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 55 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (Typ. 6

1.143. irf540a.pdf Size:256K _fairchild_semi

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IRF540A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absol

1.144. irf550a.pdf Size:261K _fairchild_semi

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IRF550A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature A (Max.) @ VDS = 100V Lower Leakage Current : 10 ? Lower RDS(ON) : 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolu

1.145. fsbf5ch60b.pdf Size:451K _fairchild_semi

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June 2007 TM Motion-SPM FSBF5CH60B Smart Power Module Features General Description It is an advanced motion-smart power module (Motion-SPMTM) UL Certified No.E209204(SPM27-JA package) that Fairchild has newly developed and designed to provide 600V-5A 3-phase IGBT inverter bridge including control ICs very compact and high performance ac motor drives mainly tar- for gate driving an

1.146. 2n5460_2n5461_2n5462_mmbf5460_mmbf5461_mmbf5462.pdf Size:114K _fairchild_semi

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2N5460 MMBF5460 2N5461 MMBF5461 2N5462 MMBF5462 G S G TO-92 D SOT-23 NOTE: Source & Drain S Mark: 6E / 61U / 61V are interchangeable D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89. Absolute Maximum Ratings* TA = 25C unless otherwise noted - Sym

1.147. mmbf5434.pdf Size:73K _fairchild_semi

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MMBF5434 N-Channel Switch This device is designed for digital switching 3 applications where very low on resistance is mandatory. Sourced from Process 58. 2 SuperSOT-3 1 Marking: 61Z 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Curren

1.148. fqpf5n50cf.pdf Size:657K _fairchild_semi

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TM FRFET FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS(on) = 1.55 ? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 18nC) DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to mini- Fast switching m

1.149. fjpf5021.pdf Size:57K _fairchild_semi

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FJPF5021 High Voltage and High Reliability High Speed Switching : tF = 0.1s(Typ.) Wide SOA TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V V CEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP C

1.150. fdp5n50f_fdpf5n50ft.pdf Size:427K _fairchild_semi

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December 2007 UniFETTM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55? Features Description RDS(on) = 1.25? ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has be

1.151. irf530a.pdf Size:254K _fairchild_semi

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IRF530A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature A (Max.) @ VDS = 100V Lower Leakage Current : 10 ? Lower RDS(ON) : 0.092 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolu

1.152. fqpf5n60c.pdf Size:1159K _fairchild_semi

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December 2013 FQP5N60C / FQPF5N60C N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω Description Features This N-Channel enhancement mode power MOSFET is 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, • produced using Fairchild Semiconductor’s proprietary planar ID = 2.25 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 15 nC) technology has been

1.153. fjpf5027.pdf Size:63K _fairchild_semi

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FJPF5027 High Voltage and High Reliability High Speed Switching Wide SOA TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Current (Pu

1.154. fqpf5n90.pdf Size:665K _fairchild_semi

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September 2000 TM QFET QFET QFET QFET FQPF5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 900V, RDS(on) = 2.3 ? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has been especiall

1.155. fqpf5p20rdtu.pdf Size:508K _fairchild_semi

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August 2014 FQPF5P20 P-Channel QFET® MOSFET -200 V, -3.4 A, 1.4 Ω Description Features This P-Channel enhancement mode power MOSFET is • -3.4 A, -200 V, RDS(on) = 1.4 Ω (Max.) @ VGS = -10 V, produced using Fairchild Semiconductor’s proprietary ID = -1.7 A planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 10 nC) MOSFET technology has been especially tai

1.156. pf5103.pdf Size:150K _fairchild_semi

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October 2006 PF5103 tm N-Channel Switch Features This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from process 51. TO-92 Marking : PF5103 1 2 3 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 40 V VGS Gate-Sourc

1.157. fqpf5n40.pdf Size:728K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 400V, RDS(on) = 1.6? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology has been especially t

1.158. irf510.pdf Size:151K _fairchild_semi

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1.159. fdp55n06_fdpf55n06.pdf Size:1209K _fairchild_semi

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TM UniFET FDP55N06/FDPF55N06 60V N-Channel MOSFET Features Description 55A, 60V, RDS(on) = 0.022 ? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 30 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast switchi

1.160. fdp5n50nzu_fdpf5n50nzu.pdf Size:702K _fairchild_semi

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February 2010 ?TM UniFET-II FDP5N50NZU / FDPF5N50NZU tm N-Channel MOSFET? 500V, 3.9A, 2.0? Features Description RDS(on) = 1.7? ( Typ.)@ VGS = 10V, ID = 1.95A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 9nC) DMOS technology. Low Crss ( Typ. 4pF) This advance technology has bee

1.161. fdp51n25_fdpf51n25.pdf Size:2977K _fairchild_semi

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July 2008 UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description 51A, 250V, RDS(on) = 0.06? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 55 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 63 pF) stripe, DMOS technology. Fast switching This advanced technology has been especiall

1.162. fdp5n50u_fdpf5n50ut.pdf Size:224K _fairchild_semi

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November2009 TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0? Features Description RDS(on) = 1.65? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC) DOMS technology. Low Crss ( Typ. 5pF) This advance technology has been

1.163. 2n5484_2n5485_2n5486_mmbf5484_mmbf5485_mmbf5486.pdf Size:357K _fairchild_semi

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February 2009 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5484/5485/5486 MMBF5484/5485/5486 Rev. 1.0.0 1 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 2 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 3 2007 Fairchild Se

1.164. fdp52n20_fdpf52n20t.pdf Size:1196K _fairchild_semi

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October 2007 UniFETTM FDP52N20 / FDPF52N20T tm N-Channel MOSFET 200V, 52A, 0.049? Features Description RDS(on) = 0.041? ( Typ.)@ VGS = 10V, ID = 26A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 49nC) DMOS technology. Low Crss ( Typ. 66pF) This advance technology has been especia

1.165. irf540.pdf Size:146K _fairchild_semi

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1.166. fdp5n50nz_fdpf5n50nz.pdf Size:247K _fairchild_semi

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March 2010 UniFET-IITM FDP5N50NZ / FDPF5N50NZ tm N-Channel MOSFET 500V, 4.5A, 1.5? Features Description RDS(on) = 1.38? (Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transis tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (Typ. 9nC) DMOS technology. Low Crss (Typ. 4pF) This advance technology has been especially

1.167. irf510a.pdf Size:252K _fairchild_semi

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IRF510A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS(on) = 0.4 ? n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 5.6 A n Improved Gate Charge n Extended Safe Operating Area TO-220 n 175C Operating Temperature n Lower Leakage Current : 10 ?A (Max.) @ VDS = 100V n Lower RDS(ON) : 0.289 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absol

1.168. fdpf5n50t.pdf Size:580K _fairchild_semi

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November 2013 FDPF5N50T N-Channel UniFETTM MOSFET 500 V, 5 A, 1.4 Ω Features Description • RDS(on) = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 11 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (Typ. 5 pF) provi

1.169. fgpf50n33bt.pdf Size:655K _fairchild_semi

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April 2009 FGPF50N33BT tm 330V, 50A PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) =1.6V @ IC = 50A tions where low conduction and switching losses are essential. High input impedance Fast switching Application

1.170. fdp5n60nz_fdpf5n60nz.pdf Size:265K _fairchild_semi

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November 2010 TM UniFET-II FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET? 600V, 4.5A, 2.0? Features Description RDS(on) = 1.65? ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 10nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been esp

1.171. irf540_rf1s540sm.pdf Size:112K _fairchild_semi

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IRF540, RF1S540SM Data Sheet January 2002 28A, 100V, 0.077 Ohm, N-Channel Power Features MOSFETs • 28A, 100V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.077Ω power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avala

1.172. fqpf5n50c.pdf Size:879K _fairchild_semi

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TM QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to

1.173. irhf57130.pdf Size:113K _international_rectifier

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PD - 93789A RADIATION HARDENED IRHF57130 POWER MOSFET 100V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57130 100K Rads (Si) 0.08? 11.7A IRHF53130 300K Rads (Si) 0.08? 11.7A IRHF54130 600K Rads (Si) 0.08? 11.7A IRHF58130 1000K Rads (Si) 0.10? 11.7A TO-39 International Rectifiers R5TM technology provides Features: h

1.174. irf520.pdf Size:180K _international_rectifier

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1.175. irhf57034.pdf Size:130K _international_rectifier

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PD - 93791 RADIATION HARDENED IRHF57034 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57034 100K Rads (Si) 0.048? 12*A IRHF53034 300K Rads (Si) 0.048? 12*A IRHF54034 600K Rads (Si) 0.048? 12*A IRHF58034 1000K Rads (Si) 0.060? 12*A TO-39 International Rectifiers R5TM technology provides Features: hi

1.176. irf520s.pdf Size:179K _international_rectifier

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1.177. irf510pbf.pdf Size:239K _international_rectifier

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PD - 95364 IRF510PbF Lead-Free 6/10/04 Document Number: 91015 www.vishay.com 1 IRF510PbF Document Number: 91015 www.vishay.com 2 IRF510PbF Document Number: 91015 www.vishay.com 3 IRF510PbF Document Number: 91015 www.vishay.com 4 IRF510PbF Document Number: 91015 www.vishay.com 5 IRF510PbF Document Number: 91015 www.vishay.com 6 IRF510PbF TO-220AB Package Outline Dimen

1.178. irf520pbf.pdf Size:214K _international_rectifier

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PD - 94850 IRF520PbF Lead-Free 11/25/03 Document Number: 91017 www.vishay.com 1 IRF520PbF Document Number: 91017 www.vishay.com 2 IRF520PbF Document Number: 91017 www.vishay.com 3 IRF520PbF Document Number: 91017 www.vishay.com 4 IRF520PbF Document Number: 91017 www.vishay.com 5 IRF520PbF Document Number: 91017 www.vishay.com 6 IRF520PbF TO-220AB Package Outline Dime

1.179. irf530.pdf Size:175K _international_rectifier

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1.180. irf5m5210.pdf Size:113K _international_rectifier

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PD - 94247 HEXFET POWER MOSFET IRF5M5210 THRU-HOLE (TO-254AA) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID -100V 0.07? -34A IRF5M5210 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low R

1.181. irf5803d2.pdf Size:127K _international_rectifier

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PD- 94016 IRF5803D2 TM FETKY MOSFET & Schottky Diode Co-packaged HEXFET? Power 1 8 A K MOSFET and Schottky Diode VDSS = -40V 2 7 Ideal For Buck Regulator Applications A K P-Channel HEXFET? 3 6 RDS(on) = 112m? S D Low VF Schottky Rectifier 4 5 G D SO-8 Footprint Schottky Vf = 0.51V Top View Description The FETKYTM family of Co-packaged HEXFETs and Schottky diodes of

1.182. irf5njz48.pdf Size:116K _international_rectifier

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PD - 94034 IRF5NJZ48 HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJZ48 55V 0.016? 22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast swit

1.183. irf5n3205.pdf Size:118K _international_rectifier

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PD - 94302A HEXFET POWER MOSFET IRF5N3205 SURFACE MOUNT (SMD-1) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 55V 0.008? 55A* IRF5N3205 Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS(

1.184. irhf57234se.pdf Size:178K _international_rectifier

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PD - 93831 RADIATION HARDENED IRHF57234SE POWER MOSFET 250V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57234SE 100K Rads (Si) 0.42? 5.4A TO-39 International Rectifiers R5TM technology provides high performance power MOSFETs for space appli- Features: cations. These devices have been characterized for Single Event E

1.185. irf5nj6215.pdf Size:116K _international_rectifier

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PD - 94284A HEXFET POWER MOSFET IRF5NJ6215 SURFACE MOUNT (SMD-0.5) 150V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ6215 -150V 0.29? -11A Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Lo

1.186. irf5850.pdf Size:126K _international_rectifier

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PD - 93947 IRF5850 HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET VDSS = -20V Surface Mount Available in Tape & Reel Low Gate Charge RDS(on) = 0.135? Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer w

1.187. irf5m3415.pdf Size:113K _international_rectifier

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PD - 94286A HEXFET POWER MOSFET IRF5M3415 THRU-HOLE (TO-254AA) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 150V 0.049? 35A IRF5M3415 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low R

1.188. irhf57230se.pdf Size:127K _international_rectifier

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PD - 93857A RADIATION HARDENED IRHF57230SE POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57230SE 100K Rads (Si) 0.24? 7.0A TO-39 International Rectifiers R5TM technology provides high performance power MOSFETs for space appli- Features: cations. These devices have been characterized for Single Ev

1.189. irf5nj9540.pdf Size:117K _international_rectifier

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PD - 94038A HEXFET POWER MOSFET IRF5NJ9540 SURFACE MOUNT (SMD-0.5) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ9540 -100V 0.117? -18A Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the L

1.190. irf520n.pdf Size:116K _international_rectifier

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PD - 91339A IRF520N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175C Operating Temperature Fast Switching RDS(on) = 0.20? Fully Avalanche Rated G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, com

1.191. irhf57z30.pdf Size:129K _international_rectifier

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PD - 93793A RADIATION HARDENED IRHF57Z30 POWER MOSFET 30V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57Z30 100K Rads (Si) 0.045? 12A* IRHF53Z30 300K Rads (Si) 0.045? 12A* IRHF54Z30 600K Rads (Si) 0.045? 12A* IRHF58Z30 1000K Rads (Si) 0.056? 12A* TO-39 International Rectifiers R5TM technology provides Features:

1.192. irf5m3710.pdf Size:114K _international_rectifier

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PD - 94234 HEXFET POWER MOSFET IRF5M3710 THRU-HOLE (TO-254AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 100V 0.03? 35A* IRF5M3710 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RD

1.193. irf5810.pdf Size:208K _international_rectifier

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PD -94198 IRF5810 HEXFET Power MOSFET Ultra Low On-Resistance ?) VDSS RDS(on) max (m?) ID ?) ?) ?) Dual P-Channel MOSFET -20V 90@VGS = -4.5V -2.9A Surface Mount 135@VGS = -2.5V -2.3A Available in Tape & Reel Low Gate Charge Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-r

1.194. irf5806.pdf Size:218K _international_rectifier

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PD - 93997 IRF5806 HEXFET Power MOSFET Trench Technology VDSS RDS(on) max ID Ultra Low On-Resistance -20V 86m?@VGS = -4.5V -4.0A P-Channel MOSFET 147m?@VGS = -2.5V -3.0A Available in Tape & Reel Description A 1 6 New trench HEXFET Power MOSFETs from D D International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance 2 5 D D per sili

1.195. irf540ns.pdf Size:125K _international_rectifier

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PD - 91342 IRF540NS IRF540NL Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche Rated RDS(on) = 44m? Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely low on-resistanc

1.196. irf5851.pdf Size:172K _international_rectifier

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PD-93998A IRF5851 HEXFET Power MOSFET l Ultra Low On-Resistance N-Ch P-Ch l Dual N and P Channel MOSFET G1 D1 1 6 l Surface Mount VDSS 20V -20V l Available in Tape & Reel S1 S2 2 5 l Low Gate Charge G2 3 4 D2 RDS(on) 0.090? 0.135? Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resista

1.197. irf540s.pdf Size:184K _international_rectifier

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1.198. irf5803.pdf Size:109K _international_rectifier

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PD-94015 IRF5803 HEXFET Power MOSFET Ultra Low On-Resistance ?) VDSS RDS(on) max (m?) ID ?) ?) ?) P-Channel MOSFET -40V 112@VGS = -10V -3.4A Surface Mount 190@VGS = -4.5V -2.7A Available in Tape & Reel Low Gate Charge Description These P-channel HEXFET Power MOSFETs from A 1 6 D D International Rectifier utilize advanced processing techniques to achieve the extremely lo

1.199. irf5m3205.pdf Size:113K _international_rectifier

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PD - 94292A HEXFET POWER MOSFET IRF5M3205 THRU-HOLE (TO-254AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 55V 0.015? 35A* IRF5M3205 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RD

1.200. irf5801.pdf Size:120K _international_rectifier

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PD-94044 IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters ? 200V 2.2? 0.6A ? ? ? Benefits A Low Gate to Drain Charge to Reduce 1 6 D D Switching Losses Fully Characterized Capacitance Including 2 5 D D Effective COSS to Simplify Design, (See App. Note AN1001) 3 4 G S Fully Characterized Avalanche Voltage and C

1.201. irhf57133se.pdf Size:128K _international_rectifier

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PD - 94334A RADIATION HARDENED IRHF57133SE POWER MOSFET 130V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57133SE 100K Rads (Si) 0.1? 10.5A TO-39 International Rectifiers R5TM technology provides Features: high performance power MOSFETs for space appli- Single Event Effect (SEE) Hardened cations. These devices ha

1.202. irf540pbf.pdf Size:1312K _international_rectifier

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PD - 94848 IRF540PbF Lead-Free 11/17/03 Document Number: 91021 www.vishay.com 1 IRF540PbF Document Number: 91021 www.vishay.com 2 IRF540PbF Document Number: 91021 www.vishay.com 3 IRF540PbF Document Number: 91021 www.vishay.com 4 IRF540PbF Document Number: 91021 www.vishay.com 5 IRF540PbF Document Number: 91021 www.vishay.com 6 IRF540PbF TO-220AB Package Outline Dime

1.203. auirf5210s.pdf Size:236K _international_rectifier

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AUTOMOTIVE GRADE AUIRF5210S Features HEXFET® Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -100V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 60m G l 175°C Operating Temperature S ID -38A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax D l Lead-Free, RoHS Compliant l Automotive Qualified * Desc

1.204. irg4cf50wb.pdf Size:29K _international_rectifier

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PD -94307 IRG4CF50WB IRG4CF50WB IGBT Die in Wafer Form C 900 V Size 5 Warp Speed G 6" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 3.11V Max. IC = 10A, TJ = 25C, VGE = 15V V(BR)CES Collector-to-Emitter Breakdown Voltage 900V Min. TJ = 25C, ICES = 250A, VGE = 0V VGE(th)

1.205. irf5n3415.pdf Size:117K _international_rectifier

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PD - 94267 HEXFET POWER MOSFET IRF5N3415 SURFACE MOUNT (SMD-1) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 150V 0.042? 37.5A IRF5N3415 Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RD

1.206. irf5y1310cm.pdf Size:107K _international_rectifier

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PD - 94058 HEXFET POWER MOSFET IRF5Y1310CM THRU-HOLE (TO-257AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y1310CM 100V 0.044? 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast

1.207. irf5y9540cm.pdf Size:105K _international_rectifier

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PD - 94027A HEXFET POWER MOSFET IRF5Y9540CM THRU-HOLE (TO-257AA) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y9540CM -100V 0.117? -18A Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fa

1.208. irf530s.pdf Size:180K _international_rectifier

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1.209. irf5y31n20.pdf Size:99K _international_rectifier

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PD - 94349A HEXFET POWER MOSFET IRF5Y31N20 THRU-HOLE (TO-257AA) 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y31N20 200V 0.092? 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low

1.210. irf5y3205cm.pdf Size:103K _international_rectifier

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PD - 94179A HEXFET POWER MOSFET IRF5Y3205CM THRU-HOLE (TO-257AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 0.022? 18A* IRF5Y3205CM 55V Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast

1.211. irf5m4905.pdf Size:115K _international_rectifier

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PD - 94155 HEXFET POWER MOSFET IRF5M4905 THRU-HOLE (TO-254AA) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID -55V 0.03? -35A* IRF5M4905 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RD

1.212. irf540n.pdf Size:99K _international_rectifier

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PD - 91341B IRF540N HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 44m? G Fast Switching Fully Avalanche Rated ID = 33A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

1.213. irf5305.pdf Size:124K _international_rectifier

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PD - 91385B IRF5305 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175C Operating Temperature Fast Switching RDS(on) = 0.06? P-Channel G Fully Avalanche Rated ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

1.214. irf5n4905.pdf Size:119K _international_rectifier

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PD - 94163 HEXFET POWER MOSFET IRF5N4905 SURFACE MOUNT (SMD-1) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID -55V 0.024? -55A* IRF5N4905 Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS

1.215. irf5n3710.pdf Size:116K _international_rectifier

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PD - 94235A HEXFET POWER MOSFET IRF5N3710 SURFACE MOUNT (SMD-1) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 100V 0.028? 45A IRF5N3710 Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS

1.216. irf5nj3315.pdf Size:115K _international_rectifier

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PD - 94287A HEXFET POWER MOSFET IRF5NJ3315 SURFACE MOUNT (SMD-0.5) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 0.08? 20A IRF5NJ3315 150V Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Lo

1.217. irf5210.pdf Size:125K _international_rectifier

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PD - 91434A IRF5210 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -100V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.06? Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista

1.218. irf5nj5305.pdf Size:118K _international_rectifier

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PD - 94033 HEXFET POWER MOSFET IRF5NJ5305 SURFACE MOUNT (SMD-0.5) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ5305 -55V 0.065? -22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low

1.219. irf5yz48cm.pdf Size:105K _international_rectifier

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PD - 94019A HEXFET POWER MOSFET IRF5YZ48CM THRU-HOLE (TO-257AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 0.029? 18A* IRF5YZ48CM 55V Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast s

1.220. irf540spbf.pdf Size:1411K _international_rectifier

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PD- 95983 IRF540SPbF Lead-Free 12/21/04 Document Number: 91022 www.vishay.com 1 IRF540SPbF Document Number: 91022 www.vishay.com 2 IRF540SPbF Document Number: 91022 www.vishay.com 3 IRF540SPbF Document Number: 91022 www.vishay.com 4 IRF540SPbF Document Number: 91022 www.vishay.com 5 IRF540SPbF Document Number: 91022 www.vishay.com 6 IRF540SPbF Peak Diode Recovery dv/d

1.221. irf5y6215cm.pdf Size:103K _international_rectifier

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PD - 94165 HEXFET POWER MOSFET IRF5Y6215CM THRU-HOLE (TO-257AA) 150V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y6215CM -150V 0.29? -11A Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast

1.222. irg4pf50wd.pdf Size:358K _international_rectifier

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PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G 50% reduction of Eoff parameter Low IGBT conduction losses @VGE = 15V, IC = 28A E

1.223. irf5805.pdf Size:126K _international_rectifier

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PD -94029 IRF5805 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -30V 0.098@VGS = -10V -3.8A Surface Mount 0.165@VGS = -4.5V -3.0A Available in Tape & Reel Low Gate Charge Description A 1 6 These P-channel MOSFETs from International Rectifier D D utilize advanced processing techniques to achieve the 2 extremely low on-resistance per silicon

1.224. irf5y3315cm.pdf Size:106K _international_rectifier

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PD - 94268 HEXFET POWER MOSFET IRF5Y3315CM THRU-HOLE (TO-257AA) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y3315CM 150V 0.085? 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast

1.225. irf5800.pdf Size:98K _international_rectifier

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PD - 93850 IRF5800 HEXFET Power MOSFET Ultra Low On-Resistance A 1 6 D D P-Channel MOSFET VDSS = -30V Surface Mount 2 5 D D Available in Tape & Reel Low Gate Charge 3 4 G S RDS(on) = 0.085? Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This be

1.226. irf5y540cm.pdf Size:99K _international_rectifier

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PD - 94017B HEXFET POWER MOSFET IRF5Y540CM THRU-HOLE (TO-257AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y540CM 100V 0.058? 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast

1.227. irf510s.pdf Size:325K _international_rectifier

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PD - 95540 IRF510SPbF Lead-Free SMD-220 7/21/04 Document Number: 91016 www.vishay.com 1 IRF510SPbF Document Number: 91016 www.vishay.com 2 IRF510SPbF Document Number: 91016 www.vishay.com 3 IRF510SPbF Document Number: 91016 www.vishay.com 4 IRF510SPbF Document Number: 91016 www.vishay.com 5 IRF510SPbF Document Number: 91016 www.vishay.com 6 IRF510SPbF Peak Diode Reco

1.228. irhf57230.pdf Size:129K _international_rectifier

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PD - 93788 RADIATION HARDENED IRHF57230 POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57230 100K Rads (Si) 0.22? 7.3A IRHF53230 300K Rads (Si) 0.22? 7.3A IRHF54230 600K Rads (Si) 0.22? 7.3A IRHF58230 1000K Rads (Si) 0.275? 7.3A TO-39 International Rectifiers R5TM technology provides Features: high

1.229. irf520v.pdf Size:200K _international_rectifier

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PD - 94092 IRF520V HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.165? G Fast Switching Fully Avalanche Rated ID = 9.6A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

1.230. irf510.pdf Size:175K _international_rectifier

F5
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1.231. irf5210s.pdf Size:186K _international_rectifier

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PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF5210S) VDSS = -100V Low-profile through-hole (IRF5210L) 175C Operating Temperature RDS(on) = 0.06? Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extrem

1.232. irf520vs.pdf Size:129K _international_rectifier

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PD - 94306 IRF520VS IRF520VL HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.165? Fast Switching G Fully Avalanche Rated ID = 9.6A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing technique

1.233. irf530ns.pdf Size:178K _international_rectifier

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PD - 91352A IRF530NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175C Operating Temperature RDS(on) = 0.11? G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resis

1.234. irf5n5210.pdf Size:118K _international_rectifier

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PD - 94154 HEXFET POWER MOSFET IRF5N5210 SURFACE MOUNT (SMD-1) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID -100V 0.060? -31A IRF5N5210 Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RD

1.235. irf5804.pdf Size:99K _international_rectifier

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PD - 94333 IRF5804 HEXFET Power MOSFET Ultra Low On-Resistance ?) VDSS RDS(on) max (m?) ID ?) ?) ?) P-Channel MOSFET -40V 198@VGS = -10V -2.5A Surface Mount 334@VGS = -4.5V -2.0A Available in Tape & Reel Low Gate Charge Description These P-channel HEXFET Power MOSFETs from A 1 6 D D International Rectifier utilize advanced processing techniques to achieve the extremely

1.236. irf540z.pdf Size:173K _international_rectifier

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PD - 94644 IRF540Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 29.5m? 175C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 34A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the lates

1.237. irf530n.pdf Size:212K _international_rectifier

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PD - 91351 IRF530N HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 90m? G Fast Switching Fully Avalanche Rated ID = 17A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per si

1.238. irhf597110.pdf Size:129K _international_rectifier

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PD - 94176B RADIATION HARDENED IRHF597110 POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF597110 100K Rads (Si) 1.0? -2.6A IRHF593110 300K Rads (Si) 1.0? -2.6A TO-39 International Rectifiers R5TM technology provides Features: high performance power MOSFETs for space appli- Single Event Effect (SEE)

1.239. irfpf50.pdf Size:863K _international_rectifier

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PD - 94889 IRFPF50PbF Lead-Free 12/11/03 Document Number: 91251 www.vishay.com 1 IRFPF50PbF Document Number: 91251 www.vishay.com 2 IRFPF50PbF Document Number: 91251 www.vishay.com 3 IRFPF50PbF Document Number: 91251 www.vishay.com 4 IRFPF50PbF Document Number: 91251 www.vishay.com 5 IRFPF50PbF Document Number: 91251 www.vishay.com 6 IRFPF50PbF TO-247AC Package Outlin

1.240. irf5802.pdf Size:127K _international_rectifier

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PD- 94086 IRF5802 SMPS MOSFET HEXFET Power MOSFET VDSS RDS(on) max ID Applications High frequency DC-DC converters ? 150V 1.2? ?@VGS = 10V 0.9A ? ? Benefits Low Gate to Drain Charge to Reduce Switching Losses D 1 6 D Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See D 2 5 D App. Note AN1001) Fully Characterized Avalanche Voltage G 3 4 S an

1.241. irf520ns.pdf Size:185K _international_rectifier

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PD -91340A IRF520NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF520NS) VDSS = 100V Low-profile through-hole (IRF520NL) 175C Operating Temperature RDS(on) = 0.20? Fast Switching G Fully Avalanche Rated ID = 9.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-res

1.242. irg4pf50w.pdf Size:138K _international_rectifier

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PD - 91710 IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features C Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G 50% reduction of Eoff parameter Low IGBT conduction losses @VGE = 15V, IC = 28A E Latest technology IGBT design offe

1.243. irf5nj540.pdf Size:115K _international_rectifier

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PD - 94020A IRF5NJ540 HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ540 100V 0.052? 22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast s

1.244. irf530pbf.pdf Size:2177K _international_rectifier

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PD - 94931 IRF530PbF Lead-Free 1/8/04 Document Number: 91019 www.vishay.com 1 IRF530PbF Document Number: 91019 www.vishay.com 2 IRF530PbF Document Number: 91019 www.vishay.com 3 IRF530PbF Document Number: 91019 www.vishay.com 4 IRF530PbF Document Number: 91019 www.vishay.com 5 IRF530PbF Document Number: 91019 www.vishay.com 6 IRF530PbF TO-220AB Package Outline Dimens

1.245. irf5ea1310.pdf Size:238K _international_rectifier

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PD-93977 HEXFET POWER MOSFET IRF5EA1310 SURFACE MOUNT (LCC-28) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5EA1310 100V 0.036? 23A Fifth Generation HEXFET power MOSFETs from LCC-28 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast switch

1.246. irgpf50f.pdf Size:110K _international_rectifier

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PD - 9.767A IRGPF50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C Switching-loss rating includes all "tail" losses VCES = 900V Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 2.7V G @VGE = 15V, IC = 28A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

1.247. irf5y5305cm.pdf Size:108K _international_rectifier

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PD - 94028 HEXFET POWER MOSFET IRF5Y5305CM THRU-HOLE (TO-257AA) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y5305CM -55V 0.065? -18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast

1.248. irf540.pdf Size:177K _international_rectifier

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F5

1.249. irf5305s.pdf Size:171K _international_rectifier

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PD - 91386C IRF5305S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF5305S) VDSS = -55V Low-profile through-hole (IRF5305L) 175C Operating Temperature RDS(on) = 0.06? Fast Switching G P-Channel ID = -31A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extrem

1.250. irf5852.pdf Size:239K _international_rectifier

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PD - 93999 IRF5852 HEXFET Power MOSFET ?) VDSS RDS(on) max (?) ID ?) ?) ?) Ultra Low On-Resistance Dual N-Channel MOSFET 20 V 0.090@VGS = 4.5V 2.7A Surface Mount 0.120@VGS = 2.5V 2.2A Available in Tape & Reel Low Gate Charge Description These N-channel MOSFETs from International Rectifier G1 1 6 D1 utilize advanced processing techniques to achieve the extremely low on-resis

1.251. irf5y3710cm.pdf Size:105K _international_rectifier

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PD - 94178 HEXFET POWER MOSFET IRF5Y3710CM THRU-HOLE (TO-257AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y3710CM 100V 0.035? 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast

1.252. irf530spbf.pdf Size:1851K _international_rectifier

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PD- 95982 IRF530SPbF Lead-Free 12/21/04 Document Number: 91020 www.vishay.com 1 IRF530SPbF Document Number: 91020 www.vishay.com 2 IRF530SPbF Document Number: 91020 www.vishay.com 3 IRF530SPbF Document Number: 91020 www.vishay.com 4 IRF530SPbF Document Number: 91020 www.vishay.com 5 IRF530SPbF Document Number: 91020 www.vishay.com 6 IRF530SPbF Peak Diode Recovery dv/d

1.253. irfaf50.pdf Size:147K _international_rectifier

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PD - 90577 REPETITIVE AVALANCHE AND dv/dt RATED IRFAF50 900V, N-CHANNEL HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAF50 900V 1.6? 6.2? The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very

1.254. blf578xr_blf578xrs.pdf Size:314K _nxp

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BLF578XR; BLF578XRS Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using NXP's XR process to provide maximum ruggedness capability in the most severe applic

1.255. irf520a.pdf Size:997K _samsung

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Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

1.256. irf540a.pdf Size:951K _samsung

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Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

1.257. irf550a.pdf Size:956K _samsung

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Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

1.258. irf530a.pdf Size:944K _samsung

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Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.092 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

1.259. irfp130-131_irf530-533.pdf Size:360K _samsung

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1.260. irf510a.pdf Size:937K _samsung

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Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.6 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.289 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

1.261. bf506.pdf Size:13K _siemens

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BF 506 PNP Silicon RF Transistor BF 506 For VHF mixer and oscillator stages 2 3 1 Type Marking Ordering Code Pin Configuration Package1) 1 2 3 BF 506 Q62702-F534 C B E TO-92 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 35 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 4 Collector current IC 30 mA Base current IB 5 Total power dissipatio

1.262. bf517.pdf Size:44K _siemens

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BF 517 NPN Silicon RF Transistor For amplifier and oscillator applications in TV-tuners Type Marking Ordering Code Pin Configuration Package BF 517 LRs Q62702-F42 1 = B 2 = E 3 = C SOT-23 Maximum Ratings of any single Transistor Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2.5 Collector current IC 25 mA Pea

1.263. bf569.pdf Size:37K _siemens

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PNP Silicon RF Transistor BF 569 For oscillators, mixers and self-oscillating mixer stages in UHF TV tuners Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BF 569 LHs Q62702-F869 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 35 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 3 Collector current IC 30 mA

1.264. bf543.pdf Size:97K _siemens

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Silicon N Channel MOS FET Triode BF 543 Preliminary Data For RF stages up to 300 MHz preferably in FM applications IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BF 543 LDs Q62702-F1372 G D S SOT-23 Maximum Ratings Parameter Symbol Values Unit Drain-sourc

1.265. bf569w.pdf Size:45K _siemens

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BF 569W PNP Silicon RF Transistor kein Status For oscillators, mixer and self-oscillating mixer stages in UHF TV-tuner Type Marking Ordering Code Pin Configuration Package BF 569W LHs Q62702-F1582 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 35 V Collector-base voltage VCBO 40 Emitter-base voltage VEBO 3 Collector current IC 3

1.266. umf5n.pdf Size:89K _rohm

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UMF5N Transistors Power management (dual transistors) UMF5N 2SA2018 and DTC144EE are housed independently in a UMT package. Application Dimensions (Units : mm) Power management circuit UMT6 Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. Structure Silicon epitaxial planar transistor Each lead has same dimensions

1.267. emf5.pdf Size:84K _rohm

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F5

EMF5 Transistors Power management (dual transistors) EMF5 2SA2018 and DTC144EE are housed independently in a EMT6 package. Application Dimensions (Units : mm) Power management circuit Features (4) ( ) 3 1) Power switching circuit in a single package. (5) (2) 2) Mounting cost and area can be cut in half. (6) (1) 1.2 1.6 Structure Silicon epitaxial planar transisto

1.268. irfpf50_sihfpf50.pdf Size:1466K _vishay

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IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.6 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 200 COMPLIANT Fast Switching Qgs (nC) 24 Ease of Paralleling Qgd (nC) 110 Simple Drive Requirements Configuration Single Compliant to RoHS Direct

1.269. irf530s_sihf530s.pdf Size:171K _vishay

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IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) (?)VGS = 10 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 26 Dynamic dV/dt Rating Qgs (nC) 5.5 Repetitive Avalanche Rated 175 C Operating Temperature Qgd (nC) 11 Fast Switching Configuration Single Eas

1.270. irf540_sihf540.pdf Size:202K _vishay

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IRF540, SiHF540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.077 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 72 COMPLIANT Fast Switching Qgs (nC) 11 Ease of Paralleling Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to RoHS Directive

1.271. irf520_sihf520.pdf Size:201K _vishay

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IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.27 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 16 COMPLIANT Fast Switching Qgs (nC) 4.4 Ease of Paralleling Qgd (nC) 7.7 Simple Drive Requirements Configuration Single Compliant to RoHS Directive

1.272. irf530_sihf530.pdf Size:201K _vishay

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IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.16 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 26 COMPLIANT Fast Switching Qgs (nC) 5.5 Ease of Paralleling Qgd (nC) 11 Simple Drive Requirements Configuration Single Compliant to RoHS Directive

1.273. nif5003n.pdf Size:105K _onsemi

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NIF5003N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 14 A, Single N-Channel, SOT-223 http://onsemi.com http://onsemi.com HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to VDSS ID MAX achieve the lowest possible on-resistance per silicon area while RDS(on) TYP (Clamped) (Limited)

1.274. mmbf5457lt1-d.pdf Size:55K _onsemi

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MMBF5457LT1 Preferred Device JFET - General Purpose Transistor N-Channel http://onsemi.com Features Pb-Free Package is Available 2 SOURCE 3 MAXIMUM RATINGS GATE Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc 1 DRAIN Drain-Gate Voltage VDG 25 Vdc Reverse Gate-Source Voltage VGS(r) -25 Vdc Gate Current IG 10 mAdc THERMAL CHARACTERISTICS 3 SOT-23 (TO-236) Characteris

1.275. mmbf5484lt1.pdf Size:148K _onsemi

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MMBF5484LT1 Preferred Device JFET Transistor N-Channel Features Pb-Free Package is Available http://onsemi.com MAXIMUM RATINGS 2 SOURCE Rating Symbol Value Unit Drain-Gate Voltage VDG 25 Vdc 3 GATE Reverse Gate-Source Voltage VGS(r) 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below PD 1 DRAIN TC = 25C 200 mW Linear Derating Factor 2.8 mW/C

1.276. emf5xv6t5-d.pdf Size:69K _onsemi

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EMF5XV6T5 Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com Features Simplifies Circuit Design (3) (2) (1) Reduces Board Space Reduces Component Count Q1 These are Pb-Free Devices Q2 MAXIMUM RATINGS R2 R1 Rating Symbol Value Unit (4) (5) (6) Q1 (TA = 25C unless otherwise not

1.277. mmbf5460lt1-d.pdf Size:60K _onsemi

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MMBF5460LT1 JFET - General Purpose Transistor P-Channel http://onsemi.com Features Pb-Free Package is Available 2 SOURCE MAXIMUM RATINGS 3 Rating Symbol Value Unit GATE Drain-Gate Voltage VDG 40 Vdc Reverse Gate-Source Voltage VGSR 40 Vdc 1 DRAIN Forward Gate Current IGF 10 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 3 Total Device Dissipation FR-5 Board, PD 1

1.278. nif5002n-d.pdf Size:74K _onsemi

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NIF5002N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N-Channel, SOT-223 http://onsemi.com HDPlust devices are an advanced series of power MOSFETs V(BR)DSS which utilize ON Semiconductors latest MOSFET technology process RDS(ON) TYP ID MAX (Clamped) to achieve the lowest possible on-resistance per silicon area while 42 V 165 mW @ 10 V 2

1.279. ntf5p03t3g.pdf Size:143K _onsemi

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NTF5P03T3G Power MOSFET 5.2 A, 30 V P-Channel SOT-223 http://onsemi.com Features Ultra Low RDS(on) 5.2 AMPERES, 30 VOLTS Higher Efficiency Extending Battery Life RDS(on) = 100 mW Logic Level Gate Drive Miniature SOT-223 Surface Mount Package Avalanche Energy Specified S This is a Pb-Free Device G Applications DC-DC Converters Power Management Motor Controls D

1.280. uf540.pdf Size:185K _utc

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UNISONIC TECHNOLOGIES CO., LTD UF540 Power MOSFET 27A, 100V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC UF540 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance and high switching speed. The UTC UF540 is suitable for AC&DC motor controls and switching power supply, etc ? FEATURES * R

1.281. aptgf500u60d4.pdf Size:197K _apt

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APTGF500U60D4 Single switch VCES = 600V IC = 500A @ Tc = 80°C NPT IGBT Power Module Application • Welding converters 1 • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 3 Features • Non Punch Through (NPT) fast IGBT 5 - Low voltage drop - Low tail current 2 - Switching frequency up to 50 kHz - Soft recovery parallel diode

1.282. aptgf50x60e2.pdf Size:245K _apt

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APTGF50X60E2 APTGF50X60P2 VCES = 600V 3 Phase bridge IC = 50A @ Tc = 80°C NPT IGBT Power Module Application • AC Motor control Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF Pin out: APTGF50X60E2 (Long pins) - Low leakage current - Avalan

1.283. aptgf50da120t.pdf Size:291K _apt

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APTGF50DA120T VCES = 1200V Boost chopper IC = 50A @ Tc = 80°C NPT IGBT Power Module Application • AC and DC motor control NTC2 VBUS VBUS SENSE • Switched Mode Power Supplies • Power Factor Correction CR1 Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz OUT - Soft recovery parallel diodes

1.284. aptgf50tdu120p.pdf Size:314K _apt

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APTGF50TDU120P Triple dual Common Source VCES = 1200V IC = 50A @ Tc = 80°C NPT IGBT Power Module C1 C3 C5 Application • AC Switches G1 G3 G5 • Switched Mode Power Supplies • Uninterruptible Power Supplies E1 E3 E5 E1/E2 E3/E4 E5/E6 Features • Non Punch Through (NPT) FAST IGBT E2 E4 E6 - Low voltage drop - Low tail current - Switching frequency up to 50 kH

1.285. aptgf50sk120t.pdf Size:296K _apt

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APTGF50SK120T VCES = 1200V Buck chopper IC = 50A @ Tc = 80°C NPT IGBT Power Module Application • AC and DC motor control VBUS NTC2 • Switched Mode Power Supplies Q1 Features G1 • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current E1 - Switching frequency up to 50 kHz OUT - Soft recovery parallel diodes - Low diode VF - Low leakage curre

1.286. aptgf50h60t3.pdf Size:318K _apt

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APTGF50H60T3 Full - Bridge VCES = 600V IC = 50A @ Tc = 80°C NPT IGBT Power Module Application 13 14 • Welding converters • Switched Mode Power Supplies Q1 Q3 • Uninterruptible Power Supplies CR1 CR3 11 18 • Motor control 19 10 Features 22 7 • Non Punch Through (NPT) Fast IGBT® - Low voltage drop 23 8 - Low tail current Q2 Q4 CR2 CR4 - Switching fr

1.287. aptgf50dh120t.pdf Size:293K _apt

F5
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APTGF50DH120T VCES = 1200V Asymmetrical - Bridge IC = 50A @ Tc = 80°C NPT IGBT Power Module Application • Welding converters VBUS • Switched Mode Power Supplies VBUS SENSE • Switched Reluctance Motor Drives Q1 G1 CR3 Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop E1 - Low tail current OUT1 OUT2 - Switching frequency up to 50 kHz - Soft rec

1.288. aptgf50x120e3.pdf Size:209K _apt

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APTGF50X120E3 VCES = 1200V 3 Phase bridge IC = 50A @ Tc = 80°C NPT IGBT Power Module Application • AC Motor control Features • Non Punch Through (NPT) IGBT® - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvi

1.289. aptgf50x120e2.pdf Size:237K _apt

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APTGF50X120E2 APTGF50X120P2 VCES = 1200V 3 Phase bridge IC = 50A @ Tc = 80°C NPT IGBT Power Module Application • AC Motor control Features • Non Punch Through (NPT) IGBT® - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes Pin out: APTGF50X120E2 (Long pins) - Low diode VF - Low leakage current - Avalanc

1.290. aptgf50ta120p.pdf Size:315K _apt

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APTGF50TA120P Triple phase leg VCES = 1200V IC = 50A @ Tc = 80°C NPT IGBT Power Module Application VBUS1 VBUS2 VBUS3 • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies G1 G3 G5 • Motor control Features E1 E3 E5 U V W • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current G2 G4 G6 - Switching frequency

1.291. aptgf50x60btp3.pdf Size:254K _apt

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APTGF50X60RTP3 APTGF50X60BTP3 Input rectifier bridge + VCES = 600V Brake + 3 Phase Bridge IC = 50A @ Tc = 80°C NPT IGBT Power Module Application • AC Motor control Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current -

1.292. aptgf50dh60t.pdf Size:312K _apt

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APTGF50DH60T Asymmetrical - Bridge VCES = 600V IC = 50A @ Tc = 80°C NPT IGBT Power Module Application • Welding converters VBUS VBUS SENSE • Switched Mode Power Supplies • Uninterruptible Power Supplies Q1 • Motor control G1 CR3 Features E1 • Non Punch Through (NPT) Fast IGBT® OUT1 OUT2 - Low voltage drop - Low tail current Q4 - Switching frequency up

1.293. aptgf50dda60t3.pdf Size:316K _apt

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APTGF50DDA60T3 Dual Boost chopper VCES = 600V IC = 50A @ Tc = 80°C NPT IGBT Power Module Application 13 14 • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction CR1 CR2 Features • Non Punch Through (NPT) Fast IGBT® 22 7 - Low voltage drop - Low tail current 23 8 - Switching frequency up to 50 kHz Q1 Q2 - Soft recovery paralle

1.294. aptgf50du120t.pdf Size:298K _apt

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APTGF50DU120T VCES = 1200V Dual common source IC = 50A @ Tc = 80°C NPT IGBT Power Module Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies Features C1 C2 • Non Punch Through (NPT) FAST IGBT Q1 - Low voltage drop Q2 - Low tail current G1 G2 - Switching frequency up to 50 kHz - Soft recovery parallel diodes E1 E2 - L

1.295. aptgf50h120t.pdf Size:294K _apt

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APTGF50H120T VCES = 1200V Full - Bridge IC = 50A @ Tc = 80°C NPT IGBT Power Module Application • Welding converters VBUS • Switched Mode Power Supplies Q3 Q1 • Uninterruptible Power Supplies • Motor control G3 G1 Features • Non Punch Through (NPT) FAST IGBT OUT1 E1 OUT2 E3 - Low voltage drop - Low tail current Q2 Q4 - Switching frequency up to 50 kHz

1.296. aptgf50a120t.pdf Size:291K _apt

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APTGF50A120T VCES = 1200V Phase leg IC = 50A @ Tc = 80°C NPT IGBT Power Module Application • Welding converters VBUS NTC2 • Switched Mode Power Supplies • Uninterruptible Power Supplies Q1 • Motor control G1 Features • Non Punch Through (NPT) FAST IGBT E1 - Low voltage drop OUT - Low tail current - Switching frequency up to 50 kHz Q2 - Soft recovery par

1.297. aptgf50dsk60t3.pdf Size:317K _apt

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APTGF50DSK60T3 Dual Buck chopper VCES = 600V IC = 50A @ Tc = 80°C NPT IGBT Power Module Application 13 14 • AC and DC motor control • Switched Mode Power Supplies Q1 Q2 18 11 Features • Non Punch Through (NPT) Fast IGBT® 10 19 - Low voltage drop 22 7 - Low tail current - Switching frequency up to 50 kHz 23 8 - Soft recovery parallel diodes - Low diode V

1.298. aptgf50x120te3.pdf Size:216K _apt

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APTGF50X120TE3 VCES = 1200V 3 Phase bridge IC = 50A @ Tc = 80°C NPT IGBT Power Module Application • AC Motor control Features • Non Punch Through (NPT) IGBT® - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelv

1.299. f5028_f5029_f5030_f5031_f5032_f5033.pdf Size:40K _fuji

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パワーMOSFET / Pסwer MOSFETs ■ パワーMOSFET Pסwer MOSFET 高機能パワー F T I F T 形   式 VDSS ID ID (pulse) RDS (on) PD VGSS VGS (th) パッケージ 質  量 * Device type Max. Typ. Package Net mass Volts Amps. Amps. Ohms (Ω) Watts Volts Volts Grams F5018 40 8 - 0.14 15 - - K-pack 0.6 F5019 40 12 - 0.14 30 - - T-pack 1.6 F5020 40 3

1.300. f5001h.pdf Size:144K _fuji

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1.301. f5038_f5041_f5042_f5043_f5044.pdf Size:40K _fuji

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パワーMOSFET / Pסwer MOSFETs ■ パワーMOSFET Pסwer MOSFET 高機能パワー F T I F T 形   式 VDSS ID ID (pulse) RDS (on) PD VGSS VGS (th) パッケージ 質  量 * Device type Max. Typ. Package Net mass Volts Amps. Amps. Ohms (Ω) Watts Volts Volts Grams F5018 40 8 - 0.14 15 - - K-pack 0.6 F5019 40 12 - 0.14 30 - - T-pack 1.6 F5020 40 3

1.302. f5016_f5017_f5018_f5019_f5020_f5021_f5022_f5023.pdf Size:40K _fuji

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パワーMOSFET / Pסwer MOSFETs ■ パワーMOSFET Pסwer MOSFET 高機能パワー F T I F T 形   式 VDSS ID ID (pulse) RDS (on) PD VGSS VGS (th) パッケージ 質  量 * Device type Max. Typ. Package Net mass Volts Amps. Amps. Ohms (Ω) Watts Volts Volts Grams F5018 40 8 - 0.14 15 - - K-pack 0.6 F5019 40 12 - 0.14 30 - - T-pack 1.6 F5020 40 3

1.303. irf530_rf1s530sm.pdf Size:74K _intersil

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IRF530, RF1S530SM Data Sheet November 1999 File Number 1575.6 14A, 100V, 0.160 Ohm, N-Channel Power Features MOSFETs • 14A, 100V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.160Ω power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in th

1.304. ssrf50p04-16.pdf Size:138K _secos

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SSRF50P04-16 50A, -40V, RDS(ON) 16m? P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench ITO-220 process to provide Low RDS(on) and to ensure minimal power loss and heat B N dissipation. Typical applications are DC-DC con

1.305. kf124_kf125_bf167_bf173_bf257_bf258_bf259_kf422_bf457_bf458_bf459_kf469_kf503_kf504_kf506_kf507_kf508-a_kf509_kf524_kf525_ks500_sf240_sf245_sf357_sf358_sf359_kf589_kf590.pdf Size:132K _tesla

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1.306. bc157vi-a_bc158vi-a-b_bc159a-b_bc177v-vi-a-b_bc178v-vi-a-b_bc179a-b_kc307a-b-v_kc308a-b-c_kc309f-b-c_kc636_kc638_kc640_kf423_kf470_kf517.pdf Size:144K _tesla

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1.307. 101nu70-71_102nu70-71_103nu70-71_104nu70-71_105nu70-71_106nu70-71_107nu70-71_gc507_gc508_gc509_gc515_gc516_gc517_gc518_gc519_gf505_gf506_gf507_af106_af109r_af239_af139.pdf Size:166K _tesla

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1.308. kf630d-s_kf621_kf622_kf520_kf521_kf522_kf523_kf552_kf907_kf910.pdf Size:139K _tesla

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1.309. buf508a1.pdf Size:153K _cdil

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Q Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR BUF508A TO-220FP Fully Isolated Plastic Package Applications High voltage, high - speed switching transistor in TO - 220FP package envelope intended for use in horizontal deflection of colour television circuits. ABSOLUTE MAXIMUM RATINGS. DESC

1.310. kf5n53d_i .pdf Size:386K _kec

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KF5N53D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N53D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electr

1.311. kf5n65d-i.pdf Size:482K _kec

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KF5N65D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N65D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 elect

1.312. kf50n06p.pdf Size:63K _kec

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KF50N06P SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ correction , electronic lamp ballasts based on half b

1.313. kf5n65p-f.pdf Size:414K _kec

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KF5N65P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N65P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, fast reverse recovery time, low on resistance, low gate F DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for E _ G A 9.9 + 0.2 electronic ballast and

1.314. kf5n53fs.pdf Size:1030K _kec

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KF5N53FS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ·VDSS= 525V, I

1.315. kf5n50pz.pdf Size:401K _kec

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KF5N50PZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode power supplies. A 9.9 0.2 B B

1.316. kf5n50dz-iz.pdf Size:404K _kec

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KF5N50DZ/IZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N50DZ This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 ele

1.317. kf5n53f.pdf Size:1030K _kec

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KF5N53F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ·VDSS= 525V, ID

1.318. kf5n50dz-ds.pdf Size:382K _kec

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KF5N50DZ/DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic ba

1.319. kf5n50f.pdf Size:395K _kec

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KF5N50P/F/PZ/FZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N50P, KF5N50PZ A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode power

1.320. bf599_bfs20.pdf Size:29K _kec

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SEMICONDUCTOR BFS20/BF599 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 MAXIMUM RATING (Ta=25 ) C 1.30 MAX 2 3 D 0.45+0.15/-0.05 CHARACTERISTIC SYMBOL RATING UNIT E 2.40+0.30/-0.20 1 G 1.90 VCBO Collector-Base Voltage 40 V H 0.95 J 0.13+0.10/-0.05 VCEO Co

1.321. kf5n50d_dz.pdf Size:380K _kec

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KF5N50D/DZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 switching mode powe

1.322. kf5n50fza-fsa.pdf Size:716K _kec

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KF5N50FZA/FSA SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ·VDSS= 50

1.323. kf5n60fz.pdf Size:393K _kec

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KF5N60P/F/PZ/FZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N60P, KF5N60PZ A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode power

1.324. kf5n53dz_ds.pdf Size:382K _kec

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KF5N53DZ/DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic ba

1.325. kf5n50ds.pdf Size:382K _kec

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KF5N50DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic balla

1.326. kf5n60d_i.pdf Size:385K _kec

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KF5N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N60D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electr

1.327. kf5n60p-f.pdf Size:93K _kec

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KF5N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ switching mode power supplies. A 9.9 + 0

1.328. kf5n50ps-fs.pdf Size:90K _kec

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KF5N50PS/FS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N50PS A This planar stripe MOSFET has better characteristics, such as fast O C switching time, fast reverse recovery time, low on resistance, low gate F charge and excellent avalanche characteristics. It is mainly suitable for E DIM MILLIMETERS G _ + electronic ballast and switch

1.329. umf5.pdf Size:611K _htsemi

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UMF5N General purpose transistors (dual transistors) FEATURES SOT-363 2SA2018 and DTC144E are housed independently in a package. Mounting possible with SOT-363 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. 1 (3) (2) (1) Marking: F5 DTr2 Tr1 R1 Equivalent circuit R2 (4) (5) (6) Tr1

1.330. emf5.pdf Size:547K _htsemi

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EMF5 General purpose transistors (dual transistors) FEATURES 2SA2018 and DTC144E are housed independently in a package. SOT-563 Mounting possible with SOT-563 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. 1 Marking: F5 (3) (2) (1) Equivalent circuit DTr2 Tr1 R1 R2 (4) (5) (6) Tr1

1.331. cep540l_ceb540l_cef540l.pdf Size:681K _cet

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CEP540L/CEB540L CEF540L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS(ON) = 50m? @VGS = 10V. RDS(ON) = 53m? @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEF SERIES CEP SERIES TO-263(DD-PAK) TO-220F S TO-220 ABSOLUTE M

1.332. cep540n_ceb540n_cef540n.pdf Size:407K _cet

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CEP540N/CEB540N CEF540N N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS(ON) = 53m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-220 & TO-263 package. G CEB SERIES CEF SERIES CEP SERIES TO-263(DD-PAK) TO-220F S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unle

1.333. aotf5n50.pdf Size:159K _aosemi

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AOT5N50/AOTF5N50 500V, 5A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT5N50 & AOTF5N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 5A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1.5Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wi

1.334. aotf5b60d.pdf Size:720K _aosemi

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AOTF5B60D TM 600V, 5A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 5A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.55V of paralleling, minimal gate spike under high dV/dt conditions and resistance to

1.335. aotf5n50fd.pdf Size:347K _aosemi

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AOTF5N50FD 500V, 5A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary VDS 600V@150℃ The AOTF5N50FD has been fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 5A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) <1.8Ω popular AC-DC applications. By providing low RDS(on), Ciss and Crss

1.336. aotf5n100.pdf Size:338K _aosemi

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AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET General Description Product Summary VDS 1100@150℃ The AOT5N100 & AOTF5N100 are fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 4A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 4.2Ω popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with

1.337. sif5n50c_1.pdf Size:380K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF5N50C N- MOS / N-CHANNEL POWER MOSFET SIF5N50C N- MOS / N-CHANN

1.338. sif5n65c.pdf Size:474K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF5N65C N- MOS / N-CHANNEL POWER MOSFET SIF5N65C N- MOS / N-CHANN

1.339. sif5n40d.pdf Size:328K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF5N40D N- MOS / N-CHANNEL POWER MOSFET SIF5N40D N- MOS / N-CHANN

1.340. sif5n60c.pdf Size:539K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF5N60C N- MOS / N-CHANNEL POWER MOSFET SIF5N60C N

1.341. sif5n50c.pdf Size:340K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF5N50C N- MOS / N-CHANNEL POWER MOSFET SIF5N50C N- MOS / N-CHANN

1.342. sif5n60c_1.pdf Size:474K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF5N60C N- MOS / N-CHANNEL POWER MOSFET SIF5N60C N- MOS / N-CHANN

1.343. mtf50p02j3.pdf Size:288K _cystek

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Spec. No. : C784J3 Issued Date : 2011.04.06 CYStech Electronics Corp. Revised Date : Page No. : 1/7 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -20V MTF50P02J3 ID -10A 58mΩ RDSON(MAX) Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package Equivalent Circuit Outline MTF50P02J3 TO-252 G:Gate D:Drain

1.344. sdf50na20.pdf Size:143K _solitron

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 SSF5508A Main Product Characteristics: VDSS 55V RDS(on) 4.5mohm (Typ) ID 110A Features and Benefits: SSF5508A TOP View (TO263)  Advanced trench MOSFET process technology  Special designed for convertors and power controls  Ultra low on-resistance  175℃ operating temperature  High Avalanche capability and 100% tested Description: It utilizes the lat

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 SSF5NS70UF Main Product Characteristics: VDSS 700V RDS(on) 1.0Ω (typ.) ID 5A ① TO-220F Marking and pin Schematic diagram Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF5NS70UF series MOSFETs is a new technology, which c

1.349. ssf5ns65uf.pdf Size:446K _silikron

F5
F5

 SSF5NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.9Ω (typ.) ID 5A ① TO-220F Marking and p in Schematic diagram Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF5NS65UF series MOSFETs is a new technology, which

1.350. ssf5508.pdf Size:307K _silikron

F5
F5

SSF5508 Feathers: ID =110A Advanced trench process technology BV=55V Ultra low Rdson, typical 6mohm Rdson=4.5 mΩ(typ.) High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF5508 is a new generation of middle voltage and high current N–Channel enhancement mode trench power SSF5508 TOP View (TO220) MOSFET. This new tec

1.351. ssf5ns50u.pdf Size:480K _silikron

F5
F5

 SSF5NS50U Main Product Characteristics: VDSS 500V RDS(on) 0.55Ω (typ.) ID 5A ① Marking and pi n TO-220 Schematic diagram Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF5NS50U series MOSFETs is a new technology, which

1.352. ssf53a0e.pdf Size:253K _silikron

F5
F5

SSF53A0E GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS(ON) < 6Ω @ VGS=4.5V RDS(ON) < 3.5Ω @ VGS=10V ESD Rating:1000V HBM ● High Power and current handing capability Schematic diagram ● Lead free product is acquired ● Surface Mount Package APPLICATION ●Direct Logic-Level Interface: TTL/CMOS Marking and pin Assignment ●Drivers: Relays, Solenoids, Lamps,

1.353. ssf5n60d.pdf Size:483K _silikron

F5
F5

 SSF5N60D Main Product Characteristics: VDSS 600V RDS(on) 1.88Ω (typ.) ID 5A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.354. ssf5ns60ud.pdf Size:485K _silikron

F5
F5

 SSF5NS60UD Main Product Characteristics: VDSS 600V RDS(on) 0.73Ω (typ.) ID 5A ① TO-252 (D-PAK) Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF5NS60UD series MOSFETs is a new tec

1.355. ssf5ns70g-d-f.pdf Size:547K _silikron

F5
F5

 SSF5NS70G/D/F Main Product Characteristics: VDSS 700V RDS(on) 1.23Ω (typ.) ID 5A ① 251 TO-252 TO- TO-220F Schematic diagram SSF5NS70G SSF5NS70D SSF5NS70F Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF5NS70G/D/F s

1.356. ssf5ns65ug.pdf Size:459K _silikron

F5
F5

 SSF5NS65UG Main Product Characteristics: VDSS 650V RDS(on) 1.1Ω (typ.) ID 5A ① TO-251 (IPAK) Marking and p in Schematic diagram Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF5NS65UG series MOSFETs is a new technology,

1.357. ssf5n60g.pdf Size:491K _silikron

F5
F5

 SSF5N60G Main Product Characteristics: VDSS 600V RDS(on) 1.88Ω (typ.) ID 5A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.358. ssf5n60f.pdf Size:376K _silikron

F5
F5

 SSF5N60F  Main Product Characteristics: VDSS 600V RDS(on) 2ohm(typ.) ID 4A Marking and pin TO220F Schematic diagram  Features and Benefits: Assignment  Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150

1.359. ssf5ns70ug.pdf Size:430K _silikron

F5
F5

 SSF5NS70UG Main Product Characteristics VDSS 700V RDS(on) 1.0Ω (typ.) ID 5A ① TO-251 (IPAK) Marking and P in Schematic Diagram Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description The SSF5NS70UG series MOSFETs is a new technology, whi

1.360. ssf5508u.pdf Size:407K _silikron

F5
F5

 SSF5508U  Main Product Characteristics: VDSS 55V RDS(on) 4.5mohm(typ.) ID 110A Marking and pin TO220 Schematic diagram  Assignment  Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17

1.361. ssf5ns65g.pdf Size:477K _silikron

F5
F5

 SSF5NS65G Main Product Characteristics: VDSS 650V RDS(on) 1.0Ω (typ.) ID 5A ① TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF5NS65G series MOSFETs is a new te

1.362. ssf5506.pdf Size:329K _silikron

F5
F5

 SSF5506  Main Product Characteristics: VDSS 55V RDS(on) 3.8mΩ(typ.) ID 140A Marking and pin TO-220 Schematic diagram  Assignment  Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ o

1.363. ssf5ns70gbp.pdf Size:424K _silikron

F5
F5

 SSF5NS70GB Main Product Characteristics VDSS 700V RDS(on) 1.3Ω (typ.) ID 5A ① TO-251S Marking and Pin Schematic Diagram Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF5NS70GB series MOSFETs is a new technology, which com

1.364. ssf5n50d.pdf Size:521K _silikron

F5
F5

 SSF5N50D Main Product Characteristics: VDSS 500V RDS(on) 1.5Ω (typ.) ID 5A TO-252 Marking a nd p in S che ma ti c di ag r a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.365. ssf5ns65ud.pdf Size:469K _silikron

F5
F5

 SSF5NS65UD Main Product Characteristics: VDSS 650V RDS(on) 0.74Ω (typ.) ID 5A ① TO-252 (DPAK) Marking and p in Schematic diagram Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF5NS65UD series MOSFETs is a new technology,

1.366. brf5n60.pdf Size:733K _blue-rocket-elect

F5
F5

BRF5N60(BRCS5N60F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi

1.367. f501.pdf Size:5799K _kexin

F5
F5

SMD Type Transistors Silicon N-Channel Power MOSFET (Depletion Mode) F501 SOT-23 Unit: mm ■ Features +0.1 2.9 -0.1 ● VDS (V) = 500V +0.1 0.4 -0.1 ● ID = 0.03 A (VGS = 10V) 3 ● RDS(ON) < 850 Ω (VGS = 10V) ● RDS(ON) < 750 Ω (VGS = 0V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1. Gate 1. Gate 1. Gate 2. Source 2. Source 2. Source 3. Drain 3.

1.368. irf540ns.pdf Size:2432K _kexin

F5
F5

SMD Type MOSFET N-Channel MOSFET IRF540NS (KRF540NS) TO-263 Unit:mm 9.65 (Min) 10.67 (Max) ■ Features 5.33 (Min) ● VDS (V) = 100V 90 ~ 93 ● ID = 33 A (VGS = 10V) ● RDS(ON) < 44mΩ (VGS = 10V) 6.22 (min) ● Fast Switching 4.06 (Min) 4.83 (Max) 1.14 (Min) 1.40 (Max) 1.65 (max) D 1.27~1.78 1.14~1.40 0.43~0.63 G 1 Gate 0.51~0.99 2 Drain 2.54 3 Sour

D'autres types de transistors... F122A , F123 , F123A , F124 , F124A , F2 , F3 , F4 , BF199 , FA1A3Q , FA1A4M , FA1A4P , FA1A4Z , FA1F4M , FA1F4N , FA1F4Z , FA1L3M .

 


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INDEX