FMMT4274 - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: FMMT4274

Matériau utilisé: Si

Polarité du transistor: NPN

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.28

Tension collecteur–base (maximale) Ucb: 30

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 12

Tension émetteur–base (maximale) Ueb: 4

Courant collecteur maximal (Ic): 0.1

Température maximale de jonction (Tj), °C: 150

Fréquence maximale de fonctionnement fT: 400

Capacite collecteur (Cc), pF: 4

Gain en courant DC hFE (hfe): 35

Boitier: TO236

Recherche équivalences (un remplaçant pour le transistor FMMT4274 )

FMMT4274 - Fiche technique PDF, Datasheet

5.1. fmmt449.pdf Size:27K _fairchild_semi

HILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical compon

5.2. fmmt494.pdf Size:126K _diodes

5.3. fmmt413.pdf Size:145K _diodes

Min. Max. Max. Max. A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020 B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004 C - 1.10 - 0.043 L 2.10 2.50 0.083 0.0985 D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM G 1.90 NOM 0.075 NOM - - - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Zetex Inc Zetex (Asia Ltd) Zetex Semiconducto

5.4. fmmt451.pdf Size:121K _diodes

5.5. fmmt497.pdf Size:158K _diodes

2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055 C 0.085 0.120 0.003 0.008 L 0.25 0.62 0.018 0.024 D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024 e 0.95 NOM 0.0375 NOM - - - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 4 - November 2006 4 www.zetex.com © Zetex Semiconductors plc 2006 FMMT497 Intentionally left blank Issue 4 - November 2006 5 www.zetex.com © Zetex Semiconductors plc 2006 FMMT497 Definiti

5.6. fmmt4400_fmmt4401.pdf Size:29K _diodes

5.7. fmmt4123.pdf Size:27K _diodes

5.8. fmmt4402_fmmt4403.pdf Size:30K _diodes

5.9. fmmt4126.pdf Size:27K _diodes

5.10. fmmt491a.pdf Size:130K _diodes

5.11. fmmt491.pdf Size:318K _diodes

1.12 - 0.044 e1 1.90 NOM 0.075 NOM A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236 D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024 e 0.95 NOM 0.037 NOM - - - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 5 - November 2007 7 www.zetex.com © Zetex Semiconductors plc 2007 FMMT491 Definitions Product change Zetex Semiconductors

5.12. fmmt4125.pdf Size:27K _diodes

5.13. fmmt493.pdf Size:138K _diodes

5.14. fmmt459.pdf Size:190K _diodes

A VCE=450V cut-off current Collector-base ICBO 100 nA VCB=450V cut-off current Emitter-base IEBO 100 nA VEB=5V cut-off current Static forward current HFE 50 120 IC = 30mA, VCE = 10V transfer ratio 70 IC = 50mA*, VCE = 10V Collector-emitter VCE(sat) 60 75 mV IC = 20mA, IB = 2mA* saturation voltage 90 mV 70 IC = 50mA, IB = 6mA* Base-emitter VBE(sat) 0.76 0.9 V IC = 50mA, IB = 5mA* saturation voltage Base-emitter turn-on VBE(on) 0.71 0.9 V IC = 50mA, VCE = 10V* voltage Transitio

5.15. fmmt4124.pdf Size:27K _diodes

5.16. fmmt493a.pdf Size:140K _diodes

ER SYMBOL VALUE UNIT Junction to Ambient (a) R JA 250 C/W Mounted on a 15mm x 15mm x 0.6mm alumina substrate connected using 25mm x 0.5 dia copper wire. ISSUE 2 - AUGUST 2003 4 SEMICONDUCTORS FMMT493A THERMAL CHARACTERISTICS 0.6 0.5 1 0.4 DC 0.3 1s 100m 100ms 0.2 10ms 1ms 100µs 0.1 Single Pulse Tamb=25°C 10m 0.0 100m 1 10 100 0 20 40 60 80 100 120 140 160 VCE Collector-Emitter Voltage (V) Temperature (°C) Safe Operating Area Derating Curve 250 200 150 D=0.5 100

5.17. fmmt489.pdf Size:48K _diodes

5.18. fmmt495.pdf Size:121K _diodes

5.19. fmmt491.pdf Size:613K _htsemi

5.20. fmmt449.pdf Size:359K _htsemi

5.21. fmmt493.pdf Size:387K _htsemi

5.22. fmmt4124.pdf Size:386K _htsemi

5.23. fmmt491.pdf Size:199K _lge

5.24. fmmt491.pdf Size:379K _wietron

MON EMITTER 50 VCE=5V Ta=25 oC 10 0 60 3 10 0 25 50 75 100 125 150 COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE Ta (?) SOT-23 Package Outline Dimensions Unit:mm A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C 2.10 3.00 TOP VIEW C D 0.85 1.05 0.46 1.00 E G 1.70 2.10 D G E H 2.70 3.10 H 0.01 0.13 J 1.10 K 0.89 K L 0.30 0.61 M 0.076 0.25 L J M WEITRON 20-Jun-2012 4/4 http://www.weitron.com.tw T Pc (mW) COLLECTOR POWER DISSIPATION TRANSITION FREQUENCY f (MH

D'autres types de transistors... FMMT415 , FMMT417 , FMMT4248 , FMMT4249 , FMMT4250 , FMMT4250A , FMMT4258 , FMMT4258A , 2N2219 , FMMT4275 , FMMT4354 , FMMT4355 , FMMT4356 , FMMT4400 , FMMT4401 , FMMT4402 , FMMT4403 .