2N3736
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: 2N3736
Matériau utilisé: Si
Polarité du transistor: NPN
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.5
Tension collecteur–base (maximale) Ucb: 50
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 30
Tension émetteur–base (maximale) Ueb: 5
Courant collecteur maximal (Ic): 1.5
Température maximale de jonction (Tj), °C: 200
Fréquence maximale de fonctionnement fT: 250
Capacite collecteur (Cc), pF: 9
Gain en courant DC hFE (hfe): 30
Boitier: TO5
Recherche équivalences (un remplaçant pour le transistor 2N3736
) 2N3736
PDF doc:
5.1. 2n373_2n374_2n456_2n457_2n497_2n544_2n561_2n578_2n579_2n580.pdf  Size:317K _rca  |
 | ÿþ |
5.2. 2n3738.pdf Size:17K _semelab  |
 | 2N3738
MECHANICAL DATA
POWER TRANSISTORS
Dimensions in mm
NPN SILICON
6.35 (0.250)
8.64 (0.340)
3.68
(0.145) rad.
3.61 (0.142)
max.
4.08(0.161)
rad.
1 2
FEATURES
• Hermetically Packaged.
• Low Saturation Voltage
• High Gain
1.27 (0.050)
1.91 (0.750)
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
TO66 Package (TO-213AA)
Pin 1 = Base Pin 2 = Emitter Case = Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 250V
VCEO Collector – Emitter Voltage (IB = 0) 225V
VEBO Emitter – Base Voltage (IC = 0) 6V
IC Collector Current 1A
IC(PK) Peak Collector Current 2A
IB Base Current 0.5A
PD Total Device Dissipation at Tcase = 25°C 20W
Derate 25°C 0.133W/°C
Tstg Operating and Storage Temperature Range –65 to 200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of |
5.3. 2n3734.pdf Size:11K _semelab  |
 | 2N3734
Dimensions in mm (inches).
Bipolar NPN Device in a
8.51 (0.34)
9.40 (0.37)
Hermetically sealed TO39
7.75 (0.305)
8.51 (0.335)
Metal Package.
6.10 (0.240)
6.60 (0.260)
Bipolar NPN Device.
0.89
max.
(0.035)
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
VCEO = 30V
dia.
IC = 1.5A
5.08 (0.200)
typ.
2.54
All Semelab hermetically sealed products
2
(0.100)
1 3 can be processed in accordance with the
0.74 (0.029)
requirements of BS, CECC and JAN,
1.14 (0.045)
0.71 (0.028) JANTX, JANTXV and JANS specifications
0.86 (0.034)
45°
TO39 (TO205AD)
PINOUTS
1 – Emitter 2 – Base 3 – Collector
Parameter Test Conditions Min. Typ. Max. Units
VCEO* 30 V
IC(CONT) 1.5 A
hFE @ 1.5/1 (VCE / IC) 30 120 -
ft 300M Hz
PD 1 W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice |
5.4. 2n3375_2n3632_2n3733.pdf Size:609K _microsemi 5.5. 2n3737.pdf Size:210K _semicoa  |
 | 2N3737
Silicon NPN Transistor
Data Sheet
Description Applications
• General purpose
• Low power
Semicoa Semiconductors offers:
• NPN silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3737J)
• JANTX level (2N3737JX)
• JANTXV level (2N3737JV)
• JANS level (2N3737JS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Features
• Hermetically sealed TO-46 metal can
• Also available in chip configuration
• Chip geometry 0806
• Reference document:
MIL-PRF-19500/395
Benefits
• Qualification Levels: JAN, JANTX,
Please contact Semicoa for special configurations
JANTXV and JANS
www.SEMICOA.com or (714) 979-1900
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 40 Volts
Collector-Base Voltage VCBO 75 |
D'autres types de transistors... 2N3732
, 2N3733
, 2N373-33
, 2N3734
, 2N3734A
, 2N3734S
, 2N3735
, 2N3735S
, BC546
, 2N3736A
, 2N3737
, 2N3737A
, 2N3738
, 2N3739
, 2N374
, 2N3740
, 2N3740A
.
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