KSA1013-Y - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: KSA1013-Y

Matériau utilisé: Si

Polarité du transistor: PNP

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.9

Tension collecteur–base (maximale) Ucb: 160

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 160

Tension émetteur–base (maximale) Ueb: 6

Courant collecteur maximal (Ic): 1

Température maximale de jonction (Tj), °C: 150

Fréquence maximale de fonctionnement fT: 15

Capacite collecteur (Cc), pF: 35

Gain en courant DC hFE (hfe): 160

Boitier: TO92

Recherche équivalences (un remplaçant pour le transistor KSA1013-Y )

KSA1013-Y - Fiche technique PDF, Datasheet

3.1. ksa1013.pdf Size:55K _fairchild_semi

1m s 10 m s 10 I 0m MAX. C s = 1 . 0 A DC( T =2 a o 5 C) Package Dimensions TO-92L 4.90 ±0.20 0.70MAX. 0.80 ±0.10 1.00MAX. 0.50 ±0.10 1.27TYP [1.27 ±0.20] 2.54 TYP 0.45 ±0.10 3.90 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA1013 8.00 ± 0.20 1.70 ± 0.20 1.00 ± 0.10 13.50 ± 0.40 1.45 ± 0.20 3.90 ± 0.20 0.45 ± 0.10 TRADEMARKS The following are registered and unregistered trademarks

3.2. ksa1013.pdf Size:86K _samsung

4.1. ksa1015.pdf Size:42K _fairchild_semi

± 0.10 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ImpliedDisconnect™ PACMAN™ SPM™ ActiveArray™ FACT Quiet series™ ISOPLANAR™ POP™ Stealth™ Bottomless™ FAST® LittleFET™ Power247™ SuperSOT™-3 CoolFET™ FASTr™ MicroFET™ PowerTrench® SuperSOT™-6 CROSSVOLT™ FRFET™ MicroPak™ QFET™ SuperSOT™-8 DOME™ GlobalOptoisolator™ MICROWIRE™ QS™ Sy

4.2. ksa1010.pdf Size:50K _fairchild_semi

Semiconductor Corporation Rev. A1, August 2001 KSA1010 FE C I [A], COLLECTOR CURRENT h , DC CURRENT GAIN C I [A], COLLECTOR CURRENT CE BE V (sat)[V], V (sat)[V]SATURATION VOLTAGE C dT(%), I DERATING C P [W], POWER DISSIPATION A m 0 8 A - m 0 7 = = - B I I B 50us 100us 300us D i s s pat i o n Li m i t e d 1m s S/ b L 10m i m i t e s d 100m s S/ D b LI I SS M I T I P E D AT I O N LI M I T E D Package Demensions

D'autres types de transistors... KS6113 , KSA1010 , KSA1010-O , KSA1010-R , KSA1010-Y , KSA1013 , KSA1013-O , KSA1013-R , 2N3866 , KSA1142 , KSA1142-O , KSA1142-Y , KSA1150 , KSA1150-G , KSA1150-O , KSA1150-R , KSA1150-Y .