KSA1381F
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: KSA1381F
Matériau utilisé: Si
Polarité du transistor: PNP
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 7
Tension collecteur–base (maximale) Ucb: 300
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 300
Tension émetteur–base (maximale) Ueb: 5
Courant collecteur maximal (Ic): 0.1
Température maximale de jonction (Tj), °C: 150
Fréquence maximale de fonctionnement fT: 150
Capacite collecteur (Cc), pF: 3.1
Gain en courant DC hFE (hfe): 160
Boitier: TO126
Recherche équivalences (un remplaçant pour le transistor KSA1381F
) KSA1381F
- Fiche technique PDF, Datasheet
3.1. ksa1381.pdf Size:73K _fairchild_semi |
| 0.1
-0.1 -1 -10 -100 -1000 -0.1 -1 -10 -100 -1000
VCB[V], COLLECTOR-BASE VOLTAGE VCB[V], COLLECTOR-BASE VOLTAGE
Figure 7. Collector Output Capacitance Figure 8. Reverse Transfer Capacitance
1000 8
7
IC(Pulse) MAX.
6
IC(DC) MAX.
100
5
Tc
4
1ms
10ms
3
10
2
Ta
1
1
1 10 100 1000 0
0 25 50 75 100 125 150 175
VCE[V], COLLECTOR-EMITTER VOLTAGE
o
T[ C], TEMPERATURE
Figure 9. Safe Operating Area Figure 10. Power Derating
©2000 Fairchild Semiconductor International Rev. A, Febru |
3.2. ksa1381_2sa1381.pdf Size:157K _fairchild_semi |
| od.
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SA1381/KSA1381 Rev. A1 2
2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor
Typical Characteristics
-20
-10
IB = -140µA
IB = -60µA
IB = -120µA
IB = -50µA
-16
-8
IB = -100µA
IB = -40µA
IB = -80µA
-12
-6
IB = -30µA
IB = -60µA
-8
-4
IB = -40µA IB = -20µA
-4
IB = -10µA
IB = -20µA
-2
IB = 0µA
IB = 0µA
-0
-0 -2 -4 -6 -8 -10
-0
-0 -20 -40 -60 -80 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLE |
5.1. ksa1304.pdf Size:56K _fairchild_semi |
| ered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ HiSeC™ SuperSOT™-8
Bottomless™ ISOPLANAR™ SyncFET™
CoolFET™ MICROWIRE™ TinyLogic™
CROSSVOLT™ POP™ UHC™
E2CMOS™ PowerTrench® VCX™
FACT™ QFET™
FACT Quiet Series™ QS™
FAST® Quiet Series™
FASTr™ SuperSOT™-3
GTO™ SuperSOT™-6
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODU |
5.2. ksa1378.pdf Size:38K _fairchild_semi |
| Optoisolator™ Power247™ SuperSOT™-6
DenseTrench™ GTO™ PowerTrench® SuperSOT™-8
HiSeC™ QFET™ SyncFET™
DOME™
EcoSPARK™ ISOPLANAR™ QS™ TruTranslation™
E2CMOS™ LittleFET™ QT Optoelectronics™ TinyLogic™
EnSigna™ MicroFET™ Quiet Series™ UHC™
FACT™ MICROWIRE™ SLIENT SWITCHER® UltraFET®
FACT Quiet Series™ OPTOLOGIC™ SMART START™ VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE |
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