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KTC4378
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: KTC4378
Matériau utilisé: Si
Polarité du transistor: NPN
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.5
Tension collecteur–base (maximale) Ucb: 0
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 60
Tension émetteur–base (maximale) Ueb: 0
Courant collecteur maximal (Ic): 1
Température maximale de jonction (Tj), °C: 175
Fréquence maximale de fonctionnement fT:
Capacite collecteur (Cc), pF:
Gain en courant DC hFE (hfe): 100
Boitier:
Recherche équivalences (un remplaçant pour le transistor KTC4378
) KTC4378
PDF doc:
1.1. ktc4378.pdf  Size:368K _kec  |
 | SEMICONDUCTOR KTC4378
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
VOLTAGE REGULATOR, RELAY,
LAMP DRIVER, INDUSTRIAL USE
A
C
FEATURES
H
High Voltage : VCEO=60V(Min.).
G
High Current : IC(Max.)=1A.
High Transition Frequency : fT=150MHz (Typ.).
DIM MILLIMETERS
Wide Area of Safe Operation.
A 4.70 MAX
D _
+
D B 2.50 0.20
Complementary to KTA1668.
K C 1.70 MAX
D 0.45+0.15/-0.10
F F
E 4.25 MAX
_
+
F 1.50 0.10
G 0.40 TYP
H 1.75 MAX
1 2 3
J 0.75 MIN
MAXIMUM RATING (Ta=25 )
K 0.5+0.10/-0.05
CHARACTERISTIC SYMBOL RATING UNIT
1. BASE
VCBO
Collector-Base Voltage 80 V
2. COLLECTOR (HEAT SINK)
VCEO 3. EMITTER
Collector-Emitter Voltage 60 V
VEBO
Emitter-Base Voltage 5 V
IC
DC 1
Collector Current A
SOT-89
ICP
Pulse 2
PC
500 mW
Collector Power Dissipation
PC *
1 W
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
Marking
PC* : Package mounted on ceramic substrate (250mm2x0.8t)
hFE Rank Lot No.
Type Name
ELECTRICAL CHARAC |
1.2. ktc4378.pdf Size:965K _htsemi  |
 | KTC4378
TRANSISTOR (NPN)
SOT-89
1. BASE
FEATURES
High voltage
2. COLLECTOR
1
2
MAXIMUM RATINGS (TA=25? unless otherwise noted)
3. EMITTER
3
Symbol Parameter Value Units
VCBO 80 V
Collector-Base Voltage
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1 A
PC Collector Dissipation 0.5 W
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 80 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 60 V
Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V
Collector cut-off current ICBO VCB=50V,IE=0 0.1 ?A
Emitter cut-off current IEBO VEB=4V,IC=0 0.1 ?A
hFE(1) VCE=2V,IC=0.05A 100 320
DC current gain
hFE(2) VCE=2V,IC=1A 30
Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.5 V
Base-emitter |
1.3. ktc4378_sot-89.pdf Size:201K _lge  |
 | KTC4378
SOT-89 Transistor(NPN)
1. BASE
SOT-89
2. COLLECTOR
1
4.6
B
4.4
3. EMITTER 1.6
2 1.8
1.4
1.4
3
Features
2.6
4.25
2.4
3.75
High voltage 0.8
MIN
0.53
0.40
0.48
0.44
2x)
0.13 B
0.35
0.37
1.5
MAXIMUM RATINGS (TA=25? unless otherwise noted)
3.0
Symbol Parameter Value Units Dimensions in inches and (millimeters)
VCBO 80 V
Collector-Base Voltage
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1 A
PC Collector Dissipation 0.5 W
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 80 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 60 V
Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V
Collector cut-off current ICBO VCB=50V,IE=0 0.1 ?A
Emitter cut-off current IEBO VEB=4V,IC=0 |
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