MMBT4123 - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: MMBT4123

Matériau utilisé: Si

Polarité du transistor: PNP

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.3

Tension collecteur–base (maximale) Ucb: 40

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 30

Tension émetteur–base (maximale) Ueb: 5

Courant collecteur maximal (Ic): 0.2

Température maximale de jonction (Tj), °C: 125

Fréquence maximale de fonctionnement fT: 250

Capacite collecteur (Cc), pF: 4

Gain en courant DC hFE (hfe): 50

Boitier: TO236

Recherche équivalences (un remplaçant pour le transistor MMBT4123 )

MMBT4123 - Fiche technique PDF, Datasheet

3.1. 2n4126_mmbt4126.pdf Size:81K _fairchild_semi

.05 - 40 °C 50 0 0.1 0.2 0.5 1 2 5 10 20 50 100 110 100 200 I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRE NT (mA) Base-Emitter Saturation Base Emitter ON Voltage vs Voltage vs Collector Current Collector Current 1 ? 1 = 10 - 40 °C 0.8 0.8 - 40 °C 25 °C 125 °C 25 °C 0.6 0.6 125 °C 0.4 0.4 V CE = 1V 0.2 0.2 0 0 110 100 200 0.1 1 10 25 I - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA) C Collector-Cutoff Current Common-Base Open Circuit vs Ambient Te

3.2. 2n4124_mmbt4124.pdf Size:95K _fairchild_semi

se-Emitter Saturation Base-Emitter ON Voltage vs Voltage vs Collector Current Collector Current 1 1 ? = 10 V = 5V CE 0.8 - 40 °C - 40 °C 0.8 25 °C 0.6 25 °C 0.6 125 °C 125 °C 0.4 0.4 0.2 0.1 1 10 100 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA) Capacitance vs Collector-Cutoff Current Reverse Bias Voltage vs Ambient Temperature 10 500 f = 1.0 MHz V = 30V 100 CB 5 10 4 C ibo 3 1 2 C 0.1 obo 1 25 50 75 100 125 150 0.1 1 10 100

3.3. mmbt4126.pdf Size:112K _diodes

to minimize self-heating effect. 4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30106 Rev. 8 - 2 1 of 3 MMBT4126 © Diodes Incorporated www.diodes.com 100 350 300 250 200 10 150 100 50 0 1 0 25 50 100 125 150 175 200 75 1 0.1 10 100 TA, AMBIENT TEMPERATURE (°C) VCB, COLLECT

3.4. mmbt4124.pdf Size:73K _diodes

s or Sb2O3 Fire Retardants. 1 of 3 January 2009 MMBT4124 © Diodes Incorporated www.diodes.com Document number: DS30105 Rev. 11 - 2  MMBT4124 1,000 400 350 300 250 100 200 150 10 100 R?JA = 417°C/W 50 0 1 0 25 50 100 125 150 175 200 75 0.1 1 10 100 1,000 TA, AMBIENT TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1) Fig. 2 Typical DC Current Gain vs. Collector Current 1 10 IC IC IB = 10 IB = 10 0.1 1 0.01 0.

3.5. mmbt4126lt1.pdf Size:154K _onsemi

rent Gain hfe - (IC = -2.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) 120 480 (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2.5 - Noise Figure NF dB (IC = -100 mAdc, VCE = -5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) - 4.0 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 5000 VCC = 40 V 3000 7.0 IC/IB = 10 2000 5.0 Cobo 1000 700 Cibo 500 3.0 300 200 2.0 QT QA 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40

3.6. mmbt4124lt1.pdf Size:144K _onsemi

W, f = 1.0 kHz) Current Gain - High Frequency |hfe| - (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 3.0 - (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) 120 480 Noise Figure NF - 5.0 dB (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 10 200 7.0 100 ts 5.0 70 td 50 Cibo 30 3.0 tf tr 20 Cobo 2.0 VCC = 3 V 10.0 IC/IB = 10 VEB(off) = 0.5 V 7.0 1.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0

D'autres types de transistors... MMBT3906 , MMBT3906LT1 , MMBT3906R , MMBT3962 , MMBT404 , MMBT404A , MMBT4121 , MMBT4122 , 2N222 , MMBT4124 , MMBT4125 , MMBT4126 , MMBT4140 , MMBT4141 , MMBT4142 , MMBT4143 , MMBT4146 .