MMBT5400R - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: MMBT5400R

Matériau utilisé: Si

Polarité du transistor: PNP

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.2

Tension collecteur–base (maximale) Ucb: 130

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 120

Tension émetteur–base (maximale) Ueb: 5

Courant collecteur maximal (Ic): 0.6

Température maximale de jonction (Tj), °C: 175

Fréquence maximale de fonctionnement fT: 100

Capacite collecteur (Cc), pF: 10

Gain en courant DC hFE (hfe): 80

Boitier: SOT23

Recherche équivalences (un remplaçant pour le transistor MMBT5400R )

MMBT5400R - Fiche technique PDF, Datasheet

3.1. mmbt5401.pdf Size:189K _motorola

BASE CURRENT (mA) Figure 2. Collector Saturation Region 103 VCE = 30 V 102 IC = ICES 101 TJ = 125°C 100 75°C 10–1 REVERSE FORWARD 10–2 25°C 10–3 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VBE, BASE–EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut–Off Region Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 FE h , CURRENT GAIN CE V , COLLECTOR–EMITTER VOLTAGE (VOLTS) C I , COLLECTOR CURRENT ( µ A) MMBT5401LT1 1.0 2.5 TJ = 25°C TJ = –55°C to 135°C 0.9

3.2. mmbt5401.pdf Size:67K _fairchild_semi

. Base-Emitter On Voltage vs Voltage vs Collector Current Collector Current Between Emitter-Base 220 100 V CB = 100V 210 10 200 1 190 0.1 180 170 0.1 1 10 100 1000 25 50 75 100 125 150 RESISTANCE (k ?) T - AM BIENT TE MPERATURE ( A °C) ? Figure 5. Collector-Cutoff Current Figure 6. Collector-Emitter Breakdown Voltage vs Ambient Temperature with Resistance Between Emitter-Base ©2004 Fairchild Semiconductor Corporation Rev. B1, August 2004 MMBT5401 FE h - TYPICAL PULS

3.3. 2n5401_mmbt5401.pdf Size:75K _fairchild_semi

Collector-Emitter Saturation vs Collector Current Voltage vs Collector Current 200 0.4 ? = 10 V CE = 5V 150 0.3 125 °C 100 0.2 25 °C 25 °C 125 °C 50 - 40 °C 0.1 - 40 °C 0 0 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 I - COLLECTOR CURRENT (mA) I - COLLECTOR CURRENT (A) C C Base-Emitter Saturation Base-Emitter ON Voltage vs Voltage vs Collector Current Collector Current 1 1 - 40 °C - 40 °C 0.8 0.8 25 °C 25 °C 0.6 0.6 125 °C 125 °C 0.4 0.4 VCE = 5V ? = 10 0.2 0.2

3.4. mmbt5401.pdf Size:121K _diodes

mA, Small Signal Current Gain hfe 40 200 ? f = 1.0kHz VCE = -10V, IC = -10mA, Current Gain-Bandwidth Product fT 100 300 MHz f = 100MHz VCE = -5.0V, IC = -200?A, Noise Figure NF ? 8.0 dB RS = 10?, f = 1.0kHz Notes: 4. Short duration pulse test used to minimize self-heating effect. 400 10,000 Note 1 VCE = 5V 350 300 1,000 TA = 150°C 250 200 100 150 TA = 25°C TA = -50°C 100 10 50 0 1 0 25 50 100 125 150 175 200 75 1 10 100 1,000 TA, AMBIENT TEMPERATURE (°C) IC,

3.5. mmbt5401_2.pdf Size:162K _mcc

mercial Components Corporation. ***CUSTOMER AWARENESS*** Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC di

3.6. mmbt5401lt1-d.pdf Size:115K _onsemi

ll Signal Current Gain hfe - (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) 40 200 Noise Figure NF dB (IC = -200 mAdc, VCE = -5.0 Vdc, RS = 10 W, f = 1.0 kHz) - 8.0 http://onsemi.com 2 MMBT5401LT1G 200 150 TJ = 125°C 100 25°C 70 50 - 55°C VCE = - 1.0 V 30 VCE = - 5.0 V 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 10 mA 30 mA 100 mA 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05

3.7. mmbt5401.pdf Size:111K _secos

C 10-1 REVERSE FORWARD 10-2 25 C 10-3 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut-Off Region 01-June-2002 Rev. A Page 2 of 3 FE h , CURRENT GAIN CE V , COLLECTOR-EMITTER VOLTAGE (VOLTS) ? C I , COLLECTOR CURRENT ( A) C MMBT5401 PNP Silicon General PurposeTransistor Elektronische Bauelemente CHARACTERISTICS CURVE 1.0 2.5 TJ = 25 C TJ = -55 C to 135 C 0.9 2.0 0.8 1.5 0.7 1.0 VBE(sat) / IB = 10 @ IC 0.5

3.8. mmbt5401w.pdf Size:226K _secos

3.9. mmbt5401.pdf Size:373K _htsemi

3.10. mmbt5401.pdf Size:295K _gsme

3.11. mmbt5401.pdf Size:194K _lge

3.12. mmbt5401.pdf Size:497K _wietron

200 tf @ VCC = 120 V 100 70 50 30 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC, COLLECTOR CURRENT ( mA ) FIG.9 Turn - Off Time WEITRON http//www.weitron.com.tw o , TEMPERATURE COEFFICIENTS (mV / C) V t, TIME ( nS ) C, CAPACITANCE ( pF ) t, TIME ( nS ) MMBT5401 SOT-23 Package Outline Dimensions Unit:mm A Dim Min Max A 0.35 0.51 B 1.19 1.80 B C 2.10 3.00 TOP VIEW C D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 D G E H 2.70 3.10 H J 0.01 0.13 K 0.89 1.60 K

D'autres types de transistors... MMBT5139 , MMBT5140 , MMBT5141 , MMBT5142 , MMBT5143 , MMBT5172 , MMBT5179 , MMBT5400 , RCA1001 , MMBT5401 , MMBT5401LT1 , MMBT5401R , MMBT5447 , MMBT5449 , MMBT5550 , MMBT5550LT1 , MMBT5550R .