MMBT5550
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: MMBT5550
Matériau utilisé: Si
Polarité du transistor: NPN
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.2
Tension collecteur–base (maximale) Ucb: 160
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 140
Tension émetteur–base (maximale) Ueb: 5
Courant collecteur maximal (Ic): 0.6
Température maximale de jonction (Tj), °C: 175
Fréquence maximale de fonctionnement fT: 100
Capacite collecteur (Cc), pF: 10
Gain en courant DC hFE (hfe): 60
Boitier: SOT23
Recherche équivalences (un remplaçant pour le transistor MMBT5550
) MMBT5550
- Fiche technique PDF, Datasheet
1.1. mmbt5550_mmbt5551.pdf  Size:199K _motorola  |
 | = 1.0 mA
10 mA 100 mA
30 mA
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
101
1.0
TJ = 25°C
VCE = 30 V
100
0.8
VBE(sat) @ IC/IB = 10
10–1 TJ = 125°C
IC = ICES
0.6
10–2
75°C
0.4
FORWARD
10–3 REVERSE
25°C
0.2
10–4
VCE(sat) @ IC/IB = 10
10–5 0
0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
VBE, BASE–EMITTER VOLTAGE (VOLTS) IC, COL |
1.2. mmbt5550.pdf Size:105K _fairchild_semi  |
 | Saturation Voltage Figure 4. Base-Emitter On Voltage
vs Collector Current vs Collector Current
1.0
- 40 oC
? = 10
1.0
0.8
- 40 oC
0.8
25 oC
0.6
o
0.6
125 C
25 oC
0.4
0.4
125 oC
0.2
0.2
VCE = 5V
0.0 0.0
110 100 200 0.1 1 10 100
IC - COLLECTOR CURRENT (mA) IC - COLLECTOR CURRENT (mA)
Figure 5. Collector Cutoff Current Figure 6. Input and Output Capacitance
vs Ambient Temperature vs Reverse Voltaget
30
50
f = 1.0 MHz
V = 100V
CB
25
20
10
15
C
ib
10
5
C
cb
|
1.3. mmbt5550lt1_mmbt5551lt1.pdf Size:121K _onsemi  |
 |
MMBT5551 80 250
(IC = 50 mAdc, VCE = 5.0 Vdc) MMBT5550 20 -
MMBT5551 30 -
Collector-Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) Both Types - 0.15
(IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550 - 0.25
MMBT5551 - 0.20
Base -Emitter Saturation Voltage VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) Both Types - 1.0
(IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550 - 1.2
MMBT5551 - 1.0
Collector Emitter Cut-off ICES nA
(VCB = 10 V) Both Types - 50
(VCB = 75 V) - 100
3. Pulse Test: P |
1.4. mmbt5550.pdf Size:469K _htsemi 1.5. mmbt5550-51.pdf Size:766K _wietron  |
 | tching Time Test Circuit
100
1000
IC / I
70 B = 10
TJ C
= 25
= 25
TJ C
50 500
tr @ VCC
= 120 V
30
300
20 200
t @ VCC = 30 V
r
10
100
Cibo
7.0
= 1.0 V
5.0 t @ VEB(off)
d
50
Cobo 30
3.0
VCC = 120 V
2.0 20
1.0
10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
0.20.3 0.5 1.0 2.03.0 5.0 10 20 30 50 100 200
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
FIG. 7 Capacitances FIG. 8 T
urn-On Time
5000
IC/ IB = 10
t f @ VCC
= 120 V
3000
= 25
TJ C
2000
|
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