MMBT5551 - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: MMBT5551

Matériau utilisé: Si

Polarité du transistor: NPN

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.2

Tension collecteur–base (maximale) Ucb: 180

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 160

Tension émetteur–base (maximale) Ueb: 5

Courant collecteur maximal (Ic): 0.6

Température maximale de jonction (Tj), °C: 175

Fréquence maximale de fonctionnement fT: 100

Capacite collecteur (Cc), pF: 10

Gain en courant DC hFE (hfe): 80

Boitier: SOT23

Recherche équivalences (un remplaçant pour le transistor MMBT5551 )

MMBT5551 - Fiche technique PDF, Datasheet

1.1. mmbt5550_mmbt5551.pdf Size:199K _motorola

= 1.0 mA 10 mA 100 mA 30 mA 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IB, BASE CURRENT (mA) Figure 2. Collector Saturation Region 101 1.0 TJ = 25°C VCE = 30 V 100 0.8 VBE(sat) @ IC/IB = 10 10–1 TJ = 125°C IC = ICES 0.6 10–2 75°C 0.4 FORWARD 10–3 REVERSE 25°C 0.2 10–4 VCE(sat) @ IC/IB = 10 10–5 0 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 VBE, BASE–EMITTER VOLTAGE (VOLTS) IC, COL

1.2. 2n5551_mmbt5551.pdf Size:171K _fairchild_semi

onductor Corporation www.fairchildsemi.com 2N5551 / MMBT5551 Rev. B1 2 2N5551 / MMBT5551 — NPN General Purpose Amplifier Typical Performance Characteristics 250 125oC VCE=5V 10 ? 10 100oC 200 75oC 1 150 25oC 125oC 100oC 100 -40oC 0.1 50 75oC 25oC -40oC 0.01 0 1 10 100 1 10 100 1000 IC- COLLECTOR CURRENT [mA] IC- COLLECTOR CURRENT [mA] Figure 1. Typical Pulsed Current Gain Figure 2. Collector-Emitter Saturation Voltage vs Collector Current vs Collector Current 1.0

1.3. mmbt5551.pdf Size:121K _diodes

hfe 50 250 ? f = 1.0kHz VCE = 10V, IC = 10mA, Current Gain-Bandwidth Product fT 100 300 MHz f = 100MHz VCE = 5.0V, IC = 200?A, Noise Figure nF ? 8.0 dB RS = 1.0k?, f = 1.0kHz Notes: 4. Short duration pulse test used to minimize self-heating effect. 1,000 400 VCE = 5V 350 TA = 150°C 300 250 100 TA = 25°C 200 TA = -50°C 150 10 100 50 0 1 0 25 50 75 100 125 150 175 200 1 10 100 IC, COLLECTOR CURRENT (mA) TA, AMBIENT TEMPERATURE (°C) Fig. 2 Typical DC Current Ga

1.4. mmbt5551.pdf Size:161K _mcc

ercial Components Corporation. ***CUSTOMER AWARENESS*** Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC dir

1.5. mmbt5550lt1_mmbt5551lt1.pdf Size:121K _onsemi

MMBT5551 80 250 (IC = 50 mAdc, VCE = 5.0 Vdc) MMBT5550 20 - MMBT5551 30 - Collector-Emitter Saturation Voltage VCE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) Both Types - 0.15 (IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550 - 0.25 MMBT5551 - 0.20 Base -Emitter Saturation Voltage VBE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) Both Types - 1.0 (IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550 - 1.2 MMBT5551 - 1.0 Collector Emitter Cut-off ICES nA (VCB = 10 V) Both Types - 50 (VCB = 75 V) - 100 3. Pulse Test: P

1.6. mmbt5551m3.pdf Size:151K _onsemi

5 V) - 100 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. http://onsemi.com 2 MMBT5551M3T5G 500 300 VCE = 1.0 V TJ = 125°C VCE = 5.0 V 200 25°C 100 - 55°C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 IC = 1.0 mA 10 mA 100 mA 30 mA 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IB, BASE CURRENT (mA) Figure 2. Colle

1.7. mmbt5551w.pdf Size:171K _secos

1.8. mmbt5551.pdf Size:326K _secos

ektronische Bauelemente General Purpose Transistor Typical Characteristics (continued) Input and Output Capacitance Small Signal Current Gain vs Reverse Voltage vs Collector Current 30 16 FREG = 20 MHz f = 1.0 MHz 25 V CE = 10V 12 20 15 8 C ib 10 4 5 C cb 0 0 110 50 0.1 1 10 100 V CE - COLLECTOR VOLTAGE (V) I C - COLLECTOR CURRENT (mA) Power Dissipation vs Ambient Temperature 700 600 500 TO-92 3 SOT-23 400 300 200 100 0 0 25 50 75 100 125 150 TEMPERATURE ( o

1.9. mmbt5551.pdf Size:1665K _htsemi

1.10. mmbt5551.pdf Size:295K _gsme

1.11. mmbt5551.pdf Size:195K _lge

D'autres types de transistors... MMBT5401 , MMBT5401LT1 , MMBT5401R , MMBT5447 , MMBT5449 , MMBT5550 , MMBT5550LT1 , MMBT5550R , BC137 , MMBT5551 , MMBT5551LT1 , MMBT5551R , MMBT5771 , MMBT5816 , MMBT5855 , MMBT5856 , MMBT5857 .