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MP10
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: MP10
Matériau utilisé: Ge
Polarité du transistor: NPN
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.15
Tension collecteur–base (maximale) Ucb: 15
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 15
Tension émetteur–base (maximale) Ueb: 15
Courant collecteur maximal (Ic): 0.02
Température maximale de jonction (Tj), °C: 85
Fréquence maximale de fonctionnement fT: 1
Capacite collecteur (Cc), pF: 60
Gain en courant DC hFE (hfe): 15
Boitier:
Recherche équivalences (un remplaçant pour le transistor MP10
) MP10
- Fiche technique PDF, Datasheet
1.1. zxmp10a17g.pdf  Size:636K _diodes  |
 | 2022 Rev. 2 - 2
ADVANCE INFORMATION
A Product Line of
Diodes Incorporated
ZXMP10A17G
Thermal Characteristics
RDS(on)
10 2.0
Limited
1.6
1
1.2
DC
1s
100ms
0.8
100m
10ms
0.4
1ms
Single Pulse
Tamb=25°C 100µs
10m 0.0
1 10 100 0 20 40 60 80 100 120 140 160
-VDS Drain-Source Voltage (V)
Temperature (°C)
Safe Operating Area Derating Curve
70
Tamb=25°C
Single Pulse
60
Tamb=25°C
100
50
40
D=0.5
30
10
Single Pulse
20
D=0.2
D=0.05
10
D=0.1
0 1
100µ 1m 10m 10 |
1.2. zxmp10a13f.pdf Size:210K _diodes  |
 | -0.6A
Gate-Drain Charge Qgd 1.6 nC
SOURCE-DRAIN DIODE
(1)
Diode Forward Voltage VSD -0.85 -0.95 V Tj=25°C, IS= -0.75A,
VGS=0V
(3)
Reverse Recovery Time trr 29 ns Tj=25°C, IS= -0.9A,
(3)
Reverse Recovery Charge Qrr 31 nC di/dt=100A/ s
NOTES
(1) Measured under pulsed conditions. Pulse width 300ms; duty cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - MARCH 2005
4
SEMIC |
1.3. zxmp10a18g.pdf Size:277K _diodes  |
 | ge Qgd 10.2 nC
SOURCE-DRAIN DIODE
(1)
Diode Forward Voltage VSD -0.85 -0.95 V Tj=25°C, IS= -3.5A,
VGS=0V
(3)
Reverse Recovery Time trr 49 ns Tj=25°C, IS= -2.8A,
(3)
Reverse Recovery Charge Qrr 107 nC di/dt=100A/ s
NOTES
(1) Measured under pulsed conditions. Pulse width 300ms; duty cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - MARCH 2005
4
SEMICONDUCTORS
ZXMP10A18G |
1.4. zxmp10a18k.pdf Size:823K _diodes  |
 | -50V, VGS=0V
f=1MHz
Output capacitance Coss 90 pF
Reverse transfer capacitance Crss 76 pF
Switching (†) (‡)
Turn-on-delay time td(on) 4.9 ns VDD= -50V, ID= -1A
RG=6.0 , VGS= -10V
Rise time tr 6.8 ns
Turn-off delay time td(off) 33.9 ns
Fall time tf 17.9 ns
Total gate charge Qg 26.9 nC VDS= -50V, VGS= -10V
ID= -2.8A
Gate-source charge Qgs 3.9 nC
Gate drain charge Qgd 10.2 nC
Source-drain diode
VSD -0.85 -0.95 V Tj=25°C, IS= -3.5A,
Diode forward voltage(*)
VGS=0V
trr 49 ns Tj=25 |
1.5. zxmp10a16k.pdf Size:757K _diodes  |
 | f=1MHz
Output capacitance Coss 55.3 pF
Reverse transfer capacitance Crss 46.4 pF
Switching (†) (‡)
Turn-on-delay time td(on) 4.3 ns VDD= -50V, ID= -1A
RG=6.0 , VGS= -10V
Rise time tr 5.2 ns
Turn-off delay time td(off) 20 ns
Fall time tf 12.1 ns
Total gate charge Qg 16.5 nC VDS= -50V, VGS= -10V
ID= -2.1A
Gate-source charge Qgs 2.47 nC
Gate drain charge Qgd 5.36 nC
Source-drain diode
VSD -0.85 -0.95 V Tj=25°C, IS= -3.35A,
Diode forward voltage(*)
VGS=0V
trr 43.3 ns Tj=25°C, IS= - |
1.6. zxmp10a17e6.pdf Size:699K _diodes  |
 | 0.4
10ms
1ms
10m Single Pulse
0.2
100us
Tamb=25°C
0.0
1 10 100 0 25 50 75 100 125 150
-VDS Drain-Source Voltage (V)
Temperature (°C)
Derating Curve
Safe Operating Area
Tamb=25°C
Single Pulse
100
100
Tamb=25°C
80
D=0.5
60
10
Single Pulse
40
D=0.2
D=0.05
20
D=0.1
1
0
100µ 1m 10m 100m 1 10 100 1k
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
3 of 8
December 2009
ZXMP10A17E6
© Diodes Incorpor |
1.7. zxmp10a17k.pdf Size:678K _diodes  |
 | he drain lead).
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
2 of 8
December 2009
ZXMP10A17K
© Diodes Incorporated
www.diodes.com
Document Number DS32028 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXMP10A17K
Thermal Characteristics
RDS(on) RDS(on)
10 10
Limited Limited
1 1
DC
DC
1s
1s
100ms 100ms
100m |
1.8. mp9a_mp10_mp10a_mp10b_mp11_mp11a.pdf Size:796K _russia 1.9. mp104_mp105_mp106_mp114_mp115_mp116.pdf Size:755K _russia 1.10. mp101-a-b_mp102_mp103-a_mp111-a-b_mp112_mp113-a.pdf Size:965K _russia D'autres types de transistors... MN29
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