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MPS2222R
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: MPS2222R
Matériau utilisé: Si
Polarité du transistor: NPN
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.5
Tension collecteur–base (maximale) Ucb: 60
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 30
Tension émetteur–base (maximale) Ueb: 5
Courant collecteur maximal (Ic): 0.8
Température maximale de jonction (Tj), °C: 150
Fréquence maximale de fonctionnement fT: 250
Capacite collecteur (Cc), pF: 8
Gain en courant DC hFE (hfe): 100
Boitier: TO92
Recherche équivalences (un remplaçant pour le transistor MPS2222R
) MPS2222R
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1.1. mps2222r.pdf  Size:244K _motorola  |
 | MOTOROLA
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SEMICONDUCTOR TECHNICAL DATA
by MPS2222/D
General Purpose Transistors
NPN Silicon
MPS2222
MPS2222A*
COLLECTOR
3
*Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
1
Rating Symbol MPS2222 MPS2222A Unit
2
3
Collector–Emitter Voltage VCEO 30 40 Vdc
CASE 29–04, STYLE 1
Collector–Base Voltage VCBO 60 75 Vdc
TO–92 (TO–226AA)
Emitter–Base Voltage VEBO 5.0 6.0 Vdc
Collector Current — Continuous IC 600 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg –55 to +150 °C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter |
3.1. mps2222-a.pdf Size:90K _onsemi  |
 | MPS2222, MPS2222A
MPS2222A is a Preferred Device
General Purpose
Transistors
NPN Silicon
http://onsemi.com
Features
• Pb-Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
2
Rating Symbol Value Unit BASE
Collector-Emitter Voltage VCEO Vdc
MPS2222 30
1
MPS2222A 40
EMITTER
Collector-Base Voltage VCBO Vdc
MPS2222 60
MPS2222A 75
Emitter-Base Voltage VEBO Vdc
MPS2222 5.0
TO-92
MPS2222A 6.0
CASE 29
Collector Current - Continuous IC 600 mAdc
STYLE 1
Total Device Dissipation PD
1
@ TA = 25°C 625 mW
1
2
2
Derate above 25°C 5.0 mW/°C
3
3
STRAIGHT LEAD BENT LEAD
Total Device Dissipation PD
BULK PACK TAPE & REEL
@ TC = 25°C 1.5 W
AMMO PACK
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg -55 to +150 °C
Temperature Range
MARKING DIAGRAMS
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W MPS2222 MPS2222A
Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W
MPS MPS2
Str |
3.2. mps2222a.pdf Size:183K _secos  |
 | MPS2222A
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
COLLECTOR
3
2
BASE
FEATURES
1
. Epitaxial Planar Die Construction
1
EMITTER
2
3
. Complementary PNP Type Available
(MPS2907A)
. Ideal for Medium Power Amplification and Switching
MAXIMUM RATINGS
RATING SYMBOL VALUE UNIT
Collector - Emitter Voltage VCEO 40 V
Collector - Base Voltage VCBO 75 V
Emitter - Base Voltage VEBO 6.0 V
Collector Current - Continuous IC 600 mA
Total Device Dissipation @ TA = 25 625 mW
PD
Derate Above 25 5.0 mW /
Total Device Dissipation @ TC = 25 1.5 Watts
PD
Derate Above 25 12 mW /
Operating and Storage Junction Temperature Range TJ, TSTG -55 ~ +150
THERMAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Junction to Ambient R JA 200 / W
Thermal Resistance, Junction to Case R JC 83.3 / W
ELECTRICAL CHARACTERISTICS (TA = 25 unless oth |
3.3. mps2222a.pdf Size:998K _lge  |
 | MPS2222A
TO-92 Transistor (NPN)
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
Features
Complementary NPN Type available (MPS2907A)
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
Dimensions in inches and (millimeters)
IC Collector Current -Continuous 600 mA
PC Collector Power Dissipation 625 mW
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 10uA , IE=0 75 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE= 10uA, IC=0 6 V
Collector cut-off current ICBO VCB= 60V, IE=0 10 nA
Collector cut-off current ICEX VCE= 60V,VEB(Off)=3V 10 nA
Emitter cut-off current IEBO VEB= 3 V, IC=0 100 nA
hFE(1) VCE=10V, |
3.4. mps2222.pdf Size:902K _wietron  |
 | MPS2222
MPS2222A
3
TO-92
2
1
1 2
3
MP S 2222
MP S 2222A
MP S 2222
MP S 2222A
MP S 2222
MP S 2222A
MP S 2222A
MP S 2222
MP S 2222A
MP S 2222
MP S 2222A
MP S 2222A
MP S 2222A
WEITRON
http://www.weitron.com.tw
MPS2222
MPS2222A
ELECTRICAL CHARACTERISTICS (TA=2 5 C unless otherwise noted) (Countinued)
Symbol Max Unit
Characteristics Min
ON CHARACTERISTICS
-
DC C urrent G ain
hF E
(IC =0.1 mAdc, VC E =10 Vdc)
35
-
(IC =1.0 mAdc, VC E =10 Vdc)
50
-
75
(IC =10 mAdc, VC E =10 Vdc) -
35
-
(IC =10 mAdc, VC E =10 Vdc, TA=-55 C ) MP S 2222A ONLY
100
300
(IC =150 mAdc, VC E =10 Vdc) (3)
50
-
(IC =150 mAdc, VC E =1.0Vdc) (3)
30
-
(IC =500 mAdc, VC E =10 Vdc) (3) MP S 2222
40
-
MP S 2222A
C ollector-E mitter S aturation Voltage (3)
VC E (sat)
Vdc
0.4
MP S 2222
(IC =150 mAdc, IB =15mAdc) -
0.3
MP S 2222A
-
MP S 2222 1.6
(IC =500 mAdc, IB =50mAdc)
-
MP S 2222A 1.0
-
B ase-E mitter S aturation Voltage (3)
VB E (sat)
- Vdc
1.3
(IC = |
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