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MPS6513
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: MPS6513
Matériau utilisé: Si
Polarité du transistor: NPN
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.31
Tension collecteur–base (maximale) Ucb: 40
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 30
Tension émetteur–base (maximale) Ueb: 4
Courant collecteur maximal (Ic): 0.1
Température maximale de jonction (Tj), °C: 135
Fréquence maximale de fonctionnement fT: 125
Capacite collecteur (Cc), pF: 4
Gain en courant DC hFE (hfe): 90
Boitier: TO92
Recherche équivalences (un remplaçant pour le transistor MPS6513
) MPS6513
PDF doc:
1.1. mps6513.pdf  Size:126K _fairchild_semi  |
 | September 2007
MPS6513
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier.
Sourced from Proces 23.
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 4 V
IC Collector Current (DC) 200 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Ta=25C unless otherwise noted
Symbol Parameter Max. Units
PD |
4.1. mmbt6515_mps6515.pdf Size:103K _fairchild_semi  |
 | MPS6515/MMBT6515
NPN General Purpose Amplifier
3
This device is designed as a general purpose
amplifier and switch.
The useful dynamic range extends to 100mA as a
2
switch and to 100MHz as an amplifier.
SOT-23
TO-92 1
Mark: 3J
1
1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings* TC=25C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 25 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 4.0 V
IC Collector current - Continuous 200 mA
TJ, Tstg Junction and Storage Temperature -55 ~ +150 C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics TC=25C unless otherwise noted
Symbol |
4.2. mps6518.pdf Size:292K _fairchild_semi  |
 | Discrete POWER & Signal
Technologies
MPS6518
C TO-92
B
E
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA. Sourced
from Process 66. See 2N3906 for characteristics.
Absolute Maximum Ratings* TA = 25C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
V Emitter-Base Voltage 4.0 V
EBO
IC Collector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25C unless otherwise noted
Symbol Characteristic Max Units
MPS6518
P Total Device Dissipat |
4.3. mps6514.pdf Size:47K _fairchild_semi  |
 | MPS6514
NPN General Purpose Amplifier
This device is designed as a general purpose
amplifier and switch.
The useful dynamic range extends to 100mA as a
switch and to 100MHz as an amplifier.
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings* Ta=25C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 25 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 4.0 V
IC Collector current - Continuous 200 mA
TJ, Tstg Junction and Storage Temperature -55 ~ +150 C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics Ta=25C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V(BR) |
4.4. mps651.pdf Size:57K _fairchild_semi  |
 | MPS651
Switching and Amplifier Applications
TO-92
1
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 80 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 0.8 A
PC Collector Dissipation 625 mW
TJ Junction Temperature 150 C
TSTG Storage Temperature -55 ~ 150 C
Electrical Characteristics Ta=25C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Voltage IC=100A, IE=0 80 V
BVCEO Collector-Emitter Voltage IC=10mA, IB=0 60 V
BVEBO Emitter- Base Voltage IC=10A, IC=0 5 V
ICBO Collector Cut-off Current VCB=80V, IE=0 0.1 A
IEBO Emitter Cut-off Current VEB=4.0V, IC=0 0.1 A
hFE1 DC Current Gain VCE=2V, IC=50mA 75
hFE2 VCE=2V, IC=500mA 75
hFE3 VCE=2V, IC=1.0A 75
hFE4 VCE=2V, IC=2.0A 40
VCE (sat) Collector-Emitter Saturation Voltage IC=1.0A, IB=100mA 300 |
4.5. mps650-mps651-mps750-mps751-cenw650-cenw651-cenw750-cenw751.pdf Size:57K _central  |
 | 145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 Fax: (631) 435-1824
|
4.6. mps651x_series.pdf Size:111K _central  |
 | DATA SHEET
NPN PNP
MPS6512 MPS6516
MPS6513 MPS6517
MPS6514 MPS6518
MPS6515 MPS6519
COMPLEMENTARY
SILICON TRANSISTORS
JEDEC TO-92 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR MPS6512 Series (NPN) and MPS6516 Series (PNP) types are molded Epoxy Silicon
Small Signal Transistors designed for general-purpose amplifier applications.
MAXIMUM RATINGS (TA=25C unless otherwise noted)
MPS6516
MPS6512 MPS6514 MPS6517
SYMBOL MPS6513 MPS6515 MPS6518 MPS6519 UNITS
Collector-Base Voltage VCBO 40 40 40 25 V
Collector-Emitter Voltage VCEO 30 25 40 25 V
Emitter-Base Voltage VEBO 4.0 V
Collector Current IC 100 mA
Power Dissipation PD 625 mW
Power Dissipation (TC=25C) PD 1.5 W
Operating and Storage
Junction Temperature TJ,Tstg -65 to +150 C
Thermal Resistance ?JC 83.3 C/W
Thermal Resistance ?JA 200 C/W
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
MPS6516
MPS6512 MPS6514 MPS6517
MPS6513 MPS6515 MPS6518 MPS6519
SYMBOL TEST CONDITIONS MIN |
4.7. mps650_mps651_mps750_mps751.pdf Size:68K _onsemi  |
 | NPN - MPS650, MPS651;
PNP - MPS750, MPS751
MPS651 and MPS751 are Preferred Devices
Amplifier Transistors
Features
Pb-Free Packages are Available*
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
2
Rating Symbol Value Unit
BASE
Collector-Emitter Voltage VCE Vdc
COLLECTOR
NPN
MPS650; MPS750 40
3
MPS651; MPS751 60
1
EMITTER
Collector-Base Voltage VCB Vdc
2
MPS650; MPS750 60
BASE
MPS651; MPS751 80
PNP
Emitter-Base Voltage VEB 5.0 Vdc
1
Collector Current - Continuous IC 2.0 Adc
EMITTER
Total Power Dissipation @ TA = 25C PD 625 mW
Derate above 25C 5.0 mW/C
Total Power Dissipation @ TC = 25C PD 1.5 W
TO-92
Derate above 25C 12 mW/C
CASE 29
Operating and Storage Junction TJ, Tstg -55 to +150 C STYLE 1
Temperature Range
1
1
THERMAL CHARACTERISTICS
2
2
3
3
Characteristic Symbol Max Unit
STRAIGHT LEAD BENT LEAD
BULK PACK TAPE & REEL
Thermal Resistance, Junction-to-Ambient VCE 200 C/W
AMMO PACK
Thermal Resistance, Junction-to-Case VCB 83.3 |
4.8. mps651.pdf Size:217K _secos  |
 | MPS651
0.625 W, 2 A, 60 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES
G H
Switching and Amplifier Applications
J
A D
Collector
Millimeter
REF.
Min. Max.
2
B
A 4.40 4.70
B 4.30 4.70
K
C 12.70 -
D 3.30 3.81
3
E 0.36 0.56
Base
F 0.36 0.51
E C F
G 1.27 TYP.
H 1.10 -
1
J 2.42 2.66
Emitter
K 0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector - Base Voltage VCBO 80 V
Collector - Emitter Voltage VCEO 60 V
Emitter - Base Voltage VEBO 5 V
Collector Current - Continuous IC 2 A
Collector Dissipation Pc 0.625 W
Junction, Storage Temperature TJ, TSTG 150, -55~150 °C
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector-Base Breakdown Voltage V(BR)CBO 80 - - V IC=100µA, IE = 0 |
4.9. mps651.pdf Size:350K _kec  |
 | SEMICONDUCTOR MPS651
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
VOLTAGE REGULATOR, RELAY,
LAMP DRIVER, INDUSTRIAL USE
B C
FEATURES
High Voltage : VCEO=60V(Min.).
High Current : IC(Max.)=1A.
N DIM MILLIMETERS
High Transition Frequency : fT=150MHz(Typ.).
A 4.70 MAX
E
K
B 4.80 MAX
Wide Area of Safe Operation. G
C 3.70 MAX
D
Complementary to MPS751.
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
_
H
J 14.00 + 0.50
K 0.55 MAX
F F
MAXIMUM RATING (Ta=25 )
L 2.30
M 0.45 MAX
CHARACTERISTIC SYMBOL RATING UNIT
N 1.00
1 2 3
VCBO
Collector-Base Voltage 80 V
1. EMITTER
2. BASE
VCEO
Collector-Emitter Voltage 60 V
3. COLLECTOR
VEBO
Emitter-Base Voltage 5 V
IC
DC 1
Collector Current A
TO-92
ICP
Pulse 2
PC
Collector Power Dissipation 625 mW
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=50V, IE=0
Collector Cut-off Current - - 100 nA |
4.10. mps6512_mps6515.pdf Size:179K _microelectronics D'autres types de transistors... MPS5910
, MPS6076
, MPS6172
, MPS650
, MPS6507
, MPS651
, MPS6511
, MPS6512
, BC546
, MPS6514
, MPS6515
, MPS6516
, MPS6517
, MPS6518
, MPS6519
, MPS6520
, MPS6521
.
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