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MPS6728
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: MPS6728
Matériau utilisé: Si
Polarité du transistor: PNP
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 1
Tension collecteur–base (maximale) Ucb: 60
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 60
Tension émetteur–base (maximale) Ueb: 5
Courant collecteur maximal (Ic): 0.5
Température maximale de jonction (Tj), °C: 150
Fréquence maximale de fonctionnement fT:
Capacite collecteur (Cc), pF: 3
Gain en courant DC hFE (hfe): 50
Boitier: TO92
Recherche équivalences (un remplaçant pour le transistor MPS6728
) MPS6728
PDF doc:
4.1. mps6726rev0d.pdf  Size:87K _motorola  |
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SEMICONDUCTOR TECHNICAL DATA
by MPS6726/D
One Watt Amplifier Transistor
PNP Silicon MPS6726
COLLECTOR
3
MPS6727
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO Vdc 1
2
MPS6726 –30
3
MPS6727 –40
CASE 29–05, STYLE 1
Collector–Base Voltage VCBO Vdc
TO–92 (TO–226AE)
MPS6726 –40
MPS6727 –50
Emitter–Base Voltage VEBO –5.0 Vdc
Collector Current — Continuous IC –1.0 Adc
Total Device Dissipation @ TA = 25°C PD 1.0 Watts
Derate above 25°C 8.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 2.5 Watts
Derate above 25°C 20 mW/°C
Operating and Storage Junction TJ, Tstg –55 to +150 °C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 125 °C/W
Thermal Resistance, Junction to Case RqJC 50 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Bre |
4.2. mps6724r.pdf Size:233K _motorola  |
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SEMICONDUCTOR TECHNICAL DATA
by MPS6724/D
One Watt Darlington Transistors
NPN Silicon MPS6724
COLLECTOR 3
MPS6725
BASE
2
EMITTER 1
MAXIMUM RATINGS
Rating Symbol MPS6724 MPS6725 Unit
Collector–Emitter Voltage VCES 40 50 Vdc 1
2
3
Collector–Base Voltage VCBO 50 60 Vdc
Emitter–Base Voltage VEBO 12 Vdc
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Collector Current — Continuous IC 1000 mAdc
Total Device Dissipation @ TA = 25°C PD 1.0 Watts
Derate above 25°C 8.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 2.5 Watts
Derate above 25°C 20 mW/°C
Operating and Storage Junction TJ, Tstg –55 to +150 °C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 125 °C/W
Thermal Resistance, Junction to Case RqJC 50 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1) V(BR)CES Vdc |
4.3. mps6726.pdf Size:93K _onsemi  |
 | MPS6726
One Watt Amplifier
Transistors
PNP Silicon
http://onsemi.com
Features
• This is a Pb-Free Device*
COLLECTOR
3
MAXIMUM RATINGS
2
BASE
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO -30 Vdc
1
Collector-Base Voltage VCBO -40 Vdc
EMITTER
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current - Continuous IC -1.0 Adc
Total Device Dissipation @ TA = 25°C PD 1.0 W
Derate above 25°C 8.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 2.5 W
Derate above 25°C 20 mW/°C
TO-92 1 WATT
Operating and Storage Junction TJ, Tstg -55 to +150 °C
(TO-226)
Temperature Range
CASE 29-10
1
1
2
2
THERMAL CHARACTERISTICS STYLE 1
3
3
Characteristic Symbol Max Unit STRAIGHT LEAD BENT LEAD
BULK PACK TAPE & REEL
Thermal Resistance, Junction-to-Ambient RqJA 125 °C/W
AMMO PACK
Thermal Resistance, Junction-to-Case RqJC 50 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
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4.4. mps6729-d.pdf Size:61K _onsemi  |
 | MPS6729
Preferred Device
One Watt Amplifier
Transistor
PNP Silicon
http://onsemi.com
Features
• Pb-Free Package is Available*
COLLECTOR
3
MAXIMUM RATINGS
2
Rating Symbol Value Unit
BASE
Collector -Emitter Voltage VCEO -80 Vdc
1
Collector -Base Voltage VCBO -80 Vdc
EMITTER
Emitter -Base Voltage VEBO -4.0 Vdc
Collector Current - Continuous IC -500 mAdc
Total Device Dissipation @ TA = 25°C PD 1.0 W
Derate above 25°C 8.0 mW/°C
TO-92 (TO-226)
Total Device Dissipation @ TC = 25°C PD 2.5 W
Derate above 25°C 20 mW/°C CASE 29-10
1 STYLE 1
Operating and Storage Junction TJ, Tstg -55 to +150 °C 2
3
Temperature Range
THERMAL CHARACTERISTICS
MARKING DIAGRAM
Characteristic Symbol Max Unit
Thermal Resistance, Junction-to-Ambient RqJA 125 °C/W
Thermal Resistance, Junction-to-Case RqJC 50 °C/W
MPS
Maximum ratings are those values beyond which device damage can occur.
6729
Maximum ratings applied to the device are individual stress limit values (not
AYWW G
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