2N4924S
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: 2N4924S
Matériau utilisé: Si
Polarité du transistor: NPN
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 1
Tension collecteur–base (maximale) Ucb: 100
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 100
Tension émetteur–base (maximale) Ueb: 5
Courant collecteur maximal (Ic): 0.2
Température maximale de jonction (Tj), °C: 175
Fréquence maximale de fonctionnement fT: 100
Capacite collecteur (Cc), pF: 10
Gain en courant DC hFE (hfe): 40
Boitier: TO39-1
Recherche équivalences (un remplaçant pour le transistor 2N4924S
) 2N4924S
- Fiche technique PDF, Datasheet
4.1. 2n4924.pdf  Size:11K _semelab 5.1. 2n4921_2n4922_2n4923.pdf Size:238K _motorola  |
 |
(2) Recommend use of thermal compound for lowest thermal resistance.
* Indicates JEDEC Registered Data.
40
30
20
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
© Motorola, Inc. 1995
1
Motorola Bipolar Power Transistor Device Data
D
P , POWER DISSIPATION (WATTS)
|
5.2. 2n4918_2n4919_2n4920.pdf Size:254K _motorola  |
 | sed upon actual current–handling capability of the
device (See Figure 5).
(2) Recommend use of thermal compound for lowest thermal resistance.
40
30
20
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
© Motorola, Inc. 1995
1
Motorola Bipolar Power Transistor Device Data
D
P , POWER DISSIPATION (WATTS)
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
2N4918 thru 2N4920 |
5.3. 2n4918_2n4919_2n4920_2.pdf Size:63K _central 5.4. 2n4928_2n4929_2n4930_2n4931.pdf Size:58K _central 5.5. 2n4921_2n4922_2n4923.pdf Size:90K _onsemi  |
 | ded choices for future use
Reference Manual, SOLDERRM/D.
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1 Publication Order Number:
January, 2006 - Rev. 11 2N4921/D
2N4921, 2N4922, 2N4923
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
IIIIIIIIIIIIIIIIIIIII Symbol IIIIMaxIIII
Characteristic IIIII Min III Unit
IIIIIIIIIIIIIIIIIIIII IIII IIII
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
|
5.6. 2n4918_2n4919_2n4920.pdf Size:113K _onsemi  |
 | IIIIIIIIIIIIIIIIIIIII
IIIIIIIIIIIIIIIIIIIIII III III
IIIII IIII
OFF CHARACTERISTICS
IIIIIIIIIIIIIIIIIIIIII
IIIII IIII
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
Collector–Emitter Sustaining Voltage (1) VCEO(sus) III III
Vdc
(IC = 0.1 Adc, IB = 0) 2N4918
40 —
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
I I I I
2N4919
60 —
I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
I I I I
2N4920
80 —
IIIIIIIIIIIIIIIIIIIIII
IIIII IIII
IIIIIIIIIIIIIIIIIIIIII III III
IIIII IIII
Collector Cutoff Current ICEO III III
mAd |
5.7. 2n4925.pdf Size:11K _semelab 5.8. 2n4921_2n4922_2n4923.pdf Size:118K _inchange_semiconductor 5.9. 2n4918_2n4919_2n4920.pdf Size:118K _inchange_semiconductor D'autres types de transistors... 2N4917
, 2N4918
, 2N4919
, 2N4920
, 2N4921
, 2N4922
, 2N4923
, 2N4924
, BC548
, 2N4925
, 2N4925S
, 2N4926
, 2N4926S
, 2N4927
, 2N4927S
, 2N4928
, 2N4928S
.
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