PN4258A
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: PN4258A
Matériau utilisé: Si
Polarité du transistor: PNP
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.2
Tension collecteur–base (maximale) Ucb: 12
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 12
Tension émetteur–base (maximale) Ueb: 4
Courant collecteur maximal (Ic): 0.05
Température maximale de jonction (Tj), °C: 150
Fréquence maximale de fonctionnement fT: 700
Capacite collecteur (Cc), pF: 3
Gain en courant DC hFE (hfe): 30
Boitier: TO92
Recherche équivalences (un remplaçant pour le transistor PN4258A
) PN4258A
PDF doc:
5.1. pn4250.pdf  Size:294K _fairchild_semi  |
 | Discrete POWER & Signal
Technologies
PN4250
C TO-92
B
E
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 68. See PN200 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V Collector-Emitter Voltage 40 V
CEO
V Collector-Base Voltage 40 V
CBO
V Emitter-Base Voltage 5.0 V
EBO
I Collector Current - Continuous 500 mA
C
Operating and Storage Junction Temperature Range -55 to +150
T , T °C
J stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic |
5.2. pn4250a.pdf Size:294K _fairchild_semi  |
 | Discrete POWER & Signal
Technologies
PN4250A
C TO-92
B
E
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 68. See PN200 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V Collector-Emitter Voltage 60 V
CEO
V Collector-Base Voltage 60 V
CBO
V Emitter-Base Voltage 5.0 V
EBO
I Collector Current - Continuous 500 mA
C
Operating and Storage Junction Temperature Range -55 to +150
T , T °C
J stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic |
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