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MMST4126
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: MMST4126
Matériau utilisé: Si
Polarité du transistor: PNP
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.2
Tension collecteur–base (maximale) Ucb: 0
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 25
Tension émetteur–base (maximale) Ueb: 0
Courant collecteur maximal (Ic): 0.2
Température maximale de jonction (Tj), °C:
Fréquence maximale de fonctionnement fT: 250
Capacite collecteur (Cc), pF:
Gain en courant DC hFE (hfe): 120
Boitier: SOT323
Recherche équivalences (un remplaçant pour le transistor MMST4126
) MMST4126
- Fiche technique PDF, Datasheet
1.1. mmst4126.pdf  Size:118K _diodes  |
 | ucts/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
MMST4126
DS30161 Rev. 7 - 2 1 of 3
© Diodes Incorporated
www.diodes.com
400 100
Note 1
f = 1MHz
350
300
250
200 10
150
Cibo
100
50
|
3.1. mmst4124.pdf Size:74K _diodes  |
 | n-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
1 of 3
January 2009
MMST4124
© Diodes Incorporated
www.diodes.com
Document number: DS30163 Rev. 9 - 2
MMST4124
1,000
400
350
300
250
100
200
150
10
100
50
0 1
1
0 25 50 100 125 150 175 200 0.1 10 100 1,000
75
IC, COLLECTOR CURRENT (mA)
TA, AMBIENT TEMPERATURE (°C)
Fig. 2 Typical DC Current Gain vs.
Fig. 1 Power Dissipati |
5.1. sst4401_mmst4401.pdf Size:98K _rohm  |
 | 3
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : Ic(mA)
DC CURRENT GAIN : h
FE
COLLECTOR EMITTER SATURATION VOLTAGE : V
CE(sat)
(V)
AC CURRENT GAIN : h
FE
BASE EMITTER SATURATION VOLTAGE : V
BE(sat)
(V)
SST4401 / MMST4401
Transistors
1000 500
1.8 Ta=25°C
Ta=25°C Ta=25°C
VCE=10V
IC / IB=10 VCC=30V
1.6
IC / IB=10
1.2
100
100
0.8
VCC=30V
0.4
10V
10
0
10 5
1 10 100 1000
1.0 10 100 1000 1.0 10 100 1000
COLLECTOR CURRENT : Ic(mA)
COLLECTOR CURRENT : Ic(mA) COLLECTOR |
5.2. umt4403_sst4403_mmst4403_2n4403.pdf Size:51K _rohm 5.3. umt4401_sst4401_mmst4401_2n4401.pdf Size:91K _rohm  |
 | ristic curves
100 1000
600 Ta=25°C
Ta=25°C
500
400
VCE=10V
100
50
300
1V
200
100
IB=0µA
10
0
0.1 1.0 10 100 1000
0 5 10
COLLECTOR CURRENT : Ic(mA)
COLLECTOR-EMITTER VOLTAGE : VCE(V)
Fig.3 DC current gain vs. collector current(?)
Fig.1 Grounded emitter output
characteristics
1000
Ta=25°C VCE=10V
IC / IB=10
0.3
Ta=125°C
25°C
0.2
100
-55°C
0.1
10
0
0.1 1.0 10 100 1000
1.0 10 100 1000
COLLECTOR CURRENT : Ic(mA)
COLLECTOR CURRENT : Ic(mA)
Fig.2 Collector-emitter |
5.4. sst4403_mmst4403.pdf Size:98K _rohm  |
 | (mA)
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
Fig.5 AC current gain vs. collector current
voltage vs. collector current
Rev.C 2/3
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
DC CURRENT GAIN : h
FE
BASE-EMITTER SATURATION VOLTAGE : V
BE (sat)
(V)
AC CURRENT GAIN : h
FE
COLLECTOR-EMITTER
SATURATION VOLTAGE : V
CE (sat)
(V)
SST4403 / MMST4403
Transistors
1000 100
1.8
Ta=25?C
Ta=25?C
Ta=25?C
VCE=10V
1.6 VCE=10V
100MHz
300MHz
1.4
200 |
5.5. mmst4401.pdf Size:134K _diodes  |
 | = 15mA
Base-Emitter Saturation Voltage VBE(SAT) ? 1.2 V
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cob ? 8.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance Ceb ? 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.0 15 k?
Voltage Feedback Ratio hre 0.1 8.0 x 10-4 VCE = 10V, IC = 1.0mA,
f = 1.0MHz
Small Signal Current Gain hfe 40 500 ?
Output Admittance hoe 1.0 30 ?S
VCE = 10V, IC = 20mA,
Current Gain-Bandwith Product fT 250 ? MHz
|
5.6. mmst4403.pdf Size:135K _diodes  |
 | 0mA
-0.75 -0.95 IC = -150mA, IBB = -15mA
Base-Emitter Saturation Voltage VBE(SAT) V
? -1.30 IC = -500mA, IBB = -50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cob ? 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance Ceb ? 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.5 15 k?
Voltage Feedback Ratio hre 0.1 8.0 x 10-4 VCE = -10V, IC = -1.0mA,
f = 1.0MHz
Small Signal Current Gain hfe 60 500 ?
Output Admittance hoe 1.0 100 ?S
VCE = -10V, IC = -20mA,
|
5.7. mmst4401.pdf Size:186K _mcc  |
 | components in life support devices or systems without the express written
approval of Micro Commercial Components Corporation.
***CUSTOMER AWARENESS***
Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking
strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages
customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors w |
5.8. mmst4403.pdf Size:190K _mcc  |
 | ents in life support devices or systems without the express written
approval of Micro Commercial Components Corporation.
***CUSTOMER AWARENESS***
Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking
strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages
customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are |
5.9. mmst4401.pdf Size:360K _htsemi 5.10. mmst4403.pdf Size:361K _htsemi D'autres types de transistors... FZT1147A
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