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ZXTP25020DFL
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: ZXTP25020DFL
Matériau utilisé: Si
Polarité du transistor: PNP
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.35
Tension collecteur–base (maximale) Ucb: 0
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 20
Tension émetteur–base (maximale) Ueb: 0
Courant collecteur maximal (Ic): 1.5
Température maximale de jonction (Tj), °C:
Fréquence maximale de fonctionnement fT: 290
Capacite collecteur (Cc), pF:
Gain en courant DC hFE (hfe): 300
Boitier: SOT23
Recherche équivalences (un remplaçant pour le transistor ZXTP25020DFL
) ZXTP25020DFL
- Fiche technique PDF, Datasheet
1.1. zxtp25020dfh.pdf  Size:516K _diodes  |
 | ent IEBO <-1 -50 nA VEB = -5.6V
Collector-emitter saturation VCE(sat)
-50 -60 mV
IC = -1A, IB = -100mA(*)
voltage
-150 -210 mV
IC = -1A, IB = -10mA(*)
-180 -240 mV
IC = -2A, IB = -40mA(*)
-155 -180 mV
IC = -4A, IB = -400mA(*)
Base-emitter saturation VBE(sat)
-960 -1050 mV
IC = -4A, IB = -400mA(*)
voltage
Base-emitter turn-on VBE(on) -815 -900 mV
IC = -4A, VCE = -2V(*)
voltage
Static forward current hFE
300 450 900
IC = -10mA, VCE = -2V(*)
transfer ratio
200 310
IC = -1A, |
1.2. zxtp25020dg.pdf Size:335K _diodes  |
 | ng)
Emitter-Base breakdown BVEBO -7 -8.3 V IE = -100?A
voltage
Collector-Base cut-off ICBO <1 50 nA VCB = -25V
current
0.5 ?A VCB = -25V, Tamb=100°C
Emitter cut-off current IEBO <1 100 nA VEB = -5.6V
Collector-Emitter VCE(sat) -50 -65 mV
IC = -1A, IB = -100mA(*)
saturation voltage
-150 -215 mV
IC = -1A, IB = -10mA(*)
-190 -245 mV
IC = -2A, IB = -40mA(*)
-250 -355 mV IC = -6A, IB = -600mA(*)
Base-Emitter saturation VBE(sat) -1050 -1150 mV
IC = -6A, IB = -600mA(*)
voltage
Base-Em |
1.3. zxtp25020bfh.pdf Size:379K _diodes  |
 | = -100 A
voltage
Emitter-collector breakdown BVECX -6 -8 V
IE = -100 A (*) RBC < 10k
voltage (reverse blocking)
or 0.25 < VBC < -0.25V
Emitter-collector breakdown BVECO -7 -8.6 V
IE = -100 A(*)
voltage (base open)
Collector-base cut-off current ICBO <-1 -50 nA VCB = -32V
-20 A VCB = -32V, Tamb= 100°C
Collector-emitter cut-off ICEX - 100 nA VCE = -32V; RBE < 1k
current
or 1V < VBE < -0.25V
Emitter-base cut-off current IEBO <-1 -50 nA VEB = -5.6V
Collector-emitter saturation V |
1.4. zxtp25020cfh.pdf Size:376K _diodes  |
 | )
Collector-base cut-off ICBO <-1 -50 nA VCB = -20V
current -20 A
VCB = -20V, Tamb= 100°C
Emitter-base cut-off current IEBO <-1 -50 nA VEB = -5.6V
Collector-emitter saturation VCE(sat) -43 -55 mV
IC = -1A, IB = -100mA(*)
voltage
-70 -100 mV
IC = -1A, IB = -20mA(*)
-120 -170 mV
IC = -2A, IB = -40mA(*)
-150 -210 mV
IC = -4A, IB = -200mA(*)
Base-emitter saturation VBE(sat) -930 -1050 mV
IC = -4A, IB = -200mA(*)
voltage
Base-emitter turn-on voltage VBE(on) -810 -900 mV
IC = -4A, V |
1.5. zxtp25020dz.pdf Size:391K _diodes  |
 | 0.25V > VBC > -0.25V
(reverse blocking)
Emitter-Collector BVECO -4 -8.5 V IE = -100?A
breakdown voltage
(reverse blocking)
Emitter-Base breakdown BVEBO -7 -8.3 V IE = -5.6V
voltage
Collector-Base cut-off ICBO <1 -50 nA VCB = -25V
current
-0.5 ?A VCB = -25V, Tamb=100°C
Emitter cut-off current IEBO <1 -50 nA VEB = -5.6V
Collector-Emitter VCE(sat) -50 -65 mV
IC = -1A, IB = -100mA(*)
saturation voltage
-150 -215 mV
IC = -1A, IB = -10mA(*)
-185 -245 mV
IC = -2A, IB = -40mA(*)
-195 |
1.6. zxtp25020dfl.pdf Size:459K _diodes  |
 | t(s) 186
Fall time t(f) 32.7
NOTES:
(*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%.
Issue 1 - January 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
ZXTP25020DFL
Typical characteristics
Issue 1 - January 2007 5 www.zetex.com
© Zetex Semiconductors plc 2007
ZXTP25020DFL
Package outline - SOT23
E
e
e1
b
3 leads
D
L1 E1
A
L
A1 c
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Max. Max.
A - 1.12 - 0.044 e1 1.90 N |
1.7. zxtp25020cff.pdf Size:438K _diodes  |
 | 8.0 V
IE = -100 A(*) RBC < 10k
voltage (reverse blocking)
or -0.25 < VBC <0.25V
Emitter-collector breakdown BVECO -7 -8.8 V
IE = -100uA(*)
voltage (base open)
Collector-base cut-off current ICBO <-1 -50 nA VCB = -20V
-20 A VCB = -20V, Tamb= 100°C
Emitter-base cut-off current IEBO <-1 -50 nA VEB = -5.6V
Collector-emitter saturation VCE(sat) -50 -65 mV
IC = -1A, IB = -100mA(*)
voltage
-80 -110 mV
IC = -1A, IB = -20mA(*)
-135 -185 mV
IC = -2A, IB = -40mA(*)
-210 -260 mV
IC = -4 |
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