BCP5310 - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: BCP5310

Matériau utilisé: Si

Polarité du transistor: PNP

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 2

Tension collecteur–base (maximale) Ucb: 0

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 80

Tension émetteur–base (maximale) Ueb: 0

Courant collecteur maximal (Ic): 1

Température maximale de jonction (Tj), °C:

Fréquence maximale de fonctionnement fT: 150

Capacite collecteur (Cc), pF:

Gain en courant DC hFE (hfe): 63

Boitier: SOT223

Recherche équivalences (un remplaçant pour le transistor BCP5310 )

BCP5310 - Fiche technique PDF, Datasheet

5.1. bcp53t1r.pdf Size:99K _motorola

100 50 50 20 20 1 3 5 10 30 50 100 300 500 1000 1000 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. Current Gain Bandwidth Product 1 120 110 100 0.8 V(BE)sat @ IC/IB = 10 90 80 V(BE)on @ VCE = 2 V 0.6 Cib 70 60 50 0.4 40 30 0.2 20 Cob V(CE)sat @ IC/IB = 10 10 0 0 1 10 100 1000 0 2 4 6 8 10 12 14 16 18 20 IC, COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS) Figure 3. Saturation and “ON” Voltages Figure 4. Capacitances

5.2. bcp51_bcp52_bcp53_3.pdf Size:50K _philips

agewidth hFE VCE = -2 V 120 80 40 0 -10-1 -1 -10 -102 -103 IC (mA) -104 Fig.2 DC current gain; typical values. 1999 Apr 08 4 Philips Semiconductors Product specification PNP medium power transistors BCP51; BCP52; BCP53 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223 D B E A X c y HE v M A b1 4 Q A A1 13 Lp 2 e1 bp w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e

5.3. bc640_bcp53_bcx53.pdf Size:136K _philips

r - -5 V IC collector current - -1 A ICM peak collector current single pulse; - -1.5 A tp ? 1ms IBM peak base current single pulse; - -0.2 A tp ? 1ms Ptot total power dissipation Tamb ? 25 °C [1] BC640 - 0.83 W [1] BCP53 - 0.65 W [2] -1 W [1] BCX53 - 0.5 W [2] - 0.9 W [3] - 1.3 W Tj junction temperature - 150 °C Tamb ambient temperature -65 +150 °C Tstg storage temperature -65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated

5.4. bcp53-16.pdf Size:47K _st

rized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - S

5.5. bcp52-bcp53.pdf Size:71K _st

from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-TH

5.6. bcp53.pdf Size:51K _fairchild_semi

HILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions

5.7. bcp51_bcp52_bcp53.pdf Size:140K _siemens

5.8. bcp51m_bcp52m_bcp53m.pdf Size:31K _siemens

f (IC) VCB = 30V VCE = 10 V BCP 51...53 EHP00260 BCP 51...53 EHP00262 103 104 MHz nA f ? T CBO 5 max 103 102 102 typ 101 5 100 101 10-1 0 50 100 C 150 100 101 102 mA 103 ? TA C Base-emitter saturation voltage Collector-emitter saturation voltage IC = f (VBEsat), hFE = 10 IC = f (VCEsat), hFE = 10 BCP 51...53 EHP00264 BCP 51...53 EHP00263 104 104 ? mA ? mA C C 103 103 5 100 C 100 C 25 C 25 C -50C -50 C 102 102 5 101 101 5 100 100 0 0.2 0.4 0.6 0.8

5.9. bcp53.pdf Size:42K _diodes

5.10. bcp53t1-d.pdf Size:101K _onsemi

rrent (VCB = -30 Vdc, IE = 0) ICBO - - -100 nAdc Emitter-Base Cutoff Current (VEB = -5.0 Vdc, IC = 0) IEBO - - -10 mAdc ON CHARACTERISTICS DC Current Gain (IC = -5.0 mAdc, VCE = -2.0 Vdc) All Part Types hFE 25 - - - (IC = -150 mAdc, VCE = -2.0 Vdc) BCP53 40 - 250 BCP53-10 63 - 160 BCP53-16 100 - 250 (IC = -500 mAdc, VCE = -2.0 Vdc) All Part Types 25 - - Collector-Emitter Saturation Voltage (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) - - -0.5 Vdc Base-Emitter On Voltage (IC = -500 mAdc, VCE

5.11. bcp53.pdf Size:286K _secos

5.12. bcp53.pdf Size:216K _wietron

D'autres types de transistors... ZXTP5401FL , ZXTP5401G , ZXTP5401Z , ZXTP558L , BC846AS , BC856AS , BCP5210 , BCP5216 , MJE13003 , BCP5316 , BCP5510 , BCP5516 , BCP5610 , BCP5616 , BCX5210 , BCX5216 , BCX5310 .