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BCP5616
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: BCP5616
Matériau utilisé: Si
Polarité du transistor: NPN
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 2
Tension collecteur–base (maximale) Ucb: 0
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 80
Tension émetteur–base (maximale) Ueb: 0
Courant collecteur maximal (Ic): 1
Température maximale de jonction (Tj), °C:
Fréquence maximale de fonctionnement fT: 150
Capacite collecteur (Cc), pF:
Gain en courant DC hFE (hfe): 100
Boitier: SOT223
Recherche équivalences (un remplaçant pour le transistor BCP5616
) BCP5616
PDF doc:
5.1. bcp56t1r.pdf  Size:200K _motorola  |
 | MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by BCP56T1/D
BCP56T1
NPN Silicon
SERIES
Epitaxial Transistor
Motorola Preferred Device
These NPN Silicon Epitaxial transistors are designed for use in audio amplifier
applications. The device is housed in the SOT-223 package, which is designed for
MEDIUM POWER
medium power surface mount applications.
NPN SILICON
High Current: 1.0 Amp
HIGH CURRENT
TRANSISTOR
The SOT-223 package can be soldered using wave or reflow. The formed leads
SURFACE MOUNT
absorb thermal stress during soldering, eliminating the possibility of damage to
the die
Available in 12 mm Tape and Reel
Use BCP56T1 to order the 7 inch/1000 unit reel
4
COLLECTOR 2,4
Use BCP56T3 to order the 13 inch/4000 unit reel
PNP Complement is BCP53T1
1
BASE
2
3
1
CASE 318E-04, STYLE 1
EMITTER 3 TO-261AA
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltag |
5.2. bcp54_bcp55_bcp56_3.pdf Size:48K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D087
BCP54; BCP55; BCP56
NPN medium power transistors
1999 Apr 08
Product specification
Supersedes data of 1997 Apr 08
Philips Semiconductors Product specification
NPN medium power transistors BCP54; BCP55; BCP56
FEATURES PINNING
High current (max. 1 A)
PIN DESCRIPTION
Low voltage (max. 80 V).
1 base
2, 4 collector
APPLICATIONS
3 emitter
Switching.
handbook, halfpage 4
DESCRIPTION
2, 4
NPN medium power transistor in a SOT223 plastic
package. PNP complements: BCP51, BCP52 and BCP53.
1
3
1 2 3
Top view MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BCP54 - 45 V
BCP55 - 60 V
BCP56 - 100 V
VCEO collector-emitter voltage open base
BCP54 - 45 V
BCP55 - 60 V
BCP56 - 80 V
VEBO emitter-base voltage open collector - 5V
IC collec |
5.3. bc639_bcp56_bcx56.pdf Size:153K _philips  |
 | BC639; BCP56; BCX56
80 V, 1 A NPN medium power transistors
Rev. 08 22 June 2007 Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series.
Table 1. Product overview
Type number[1] Package PNP complement
NXP JEITA JEDEC
BC639[2] SOT54 SC-43A TO-92 BC640
BCP56 SOT223 SC-73 - BCP53
BCX56 SOT89 SC-62 TO-243 BCX53
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
High current
Two current gain selections
High power dissipation capability
1.3 Applications
Linear voltage regulators
Low-side switches
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 80 V
IC collector current - - 1 A
ICM peak collector current single pulse; tp ? 1 ms - - 1.5 A
hFE DC current gain VCE =2V; IC = 150 mA 63 - 250
hFE selection -10 VCE =2V; |
5.4. bcp55-bcp56.pdf Size:71K _st  |
 | BCP55/56
MEDIUM POWER AMPLIFIER
ADVANCE DATA
SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
GENERAL PURPOSE MAINLY INTENDED
2
FOR USE IN MEDIUM POWER INDUSTRIAL
APPLICATION AND FOR AUDIO AMPLIFIER
3
OUTPUT STAGE
2
PNP COMPLEMENTS ARE BCP52 AND
1
BCP53 RESPECTIVELY
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BCP55 BCP56
V Collector-Base Voltage (I = 0) 60 100 V
CBO E
V Collector-Emitter Voltage (I = 0) 60 80 V
CEO B
VCER Collector-Emitter Voltage (RBE = 1K?)60 100 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
IC Collector Current 1 A
ICM Collector Peak Current (tp < 5 ms) 1.5 A
I Base Current 0.1 A
B
I Base Peak Current (t < ms) 0.2 A
BM p
Ptot Total Dissipation at Tc = 25 oC2 W
o
T Storage Temperature -65 to 150 C
stg
o
Tj Max. Operating Junction Temperature 150 C
1/4
October 1997
BCP55/56
THERMAL DATA
o
Rthj-amb
Max 62.5 C/W
Th |
5.5. bcp56-16.pdf Size:151K _st  |
 | BCP56-16
Low power NPN Transistor
General features
Silicon epitaxial planar NPN medium voltage
transistor
2
SOT-223 plastic package for surface mounting
circuits
3
Available in tape & reel packing 2
1
In compliance with the 2002/93/EC European
Directive
SOT-223
The PNP complementary type is BCP53-16
Applications
Medium voltage load switch transistor
Output stage for audio amplifiers circuits
Internal schematic diagram
Automotive post-voltage regulation
Order codes
Part Number Marking Package Packing
BCP56-16 BCP5616 SOT-223 Tape & reel
June 2006 Rev 3 1/9
www.st.com 9
BCP56-16
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Package mechanical data . . . . . |
5.6. bcp56.pdf Size:39K _fairchild_semi  |
 | BCP56
C
E
C
B
SOT-223
NPN General Purpose Amplifier
These devices are designed for general purpose medium power amplifiers and switches requiring collector
currents to 1A. Sourced from Process 39.
Absolute Maximum Ratings* T
A = 25C unless otherwise noted
Symbol Parameter BCP56 Units
80 V
VCEO Collector-Emitter Voltage
100 V
VCBO Collector-Base Voltage
5 V
VEBO Emitter-Base Voltage
Collector Current - Continuous 1.2 A
IC
-55 to +150 C
TJ, Tstg Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
A = 25C unless otherwise noted
Max
Symbol Characteristic Units
BCP56
Total Device Dissipation 1 W
PD
Derate above 25 |
5.7. bcp54m_bcp55m_bcp56m.pdf Size:31K _siemens  |
 | BCP 54M ... BCP 56M
NPN Silicon AF Transistors
4
For AF driver and output stages
5
High collector current
Low collector-emitter saturation voltage
3
Complementary types: BCP 51M...BCP 53M(PNP)
2
1
VPW05980
Type Marking Ordering Code Pin Configuration Package
BCP 54M BAs Q62702-C2595 1 = B 2 = C 3 = E 4 n.c. 5 = C SCT-595
BCP 55M BEs Q62702-C2606
BCP 56M BHs Q62702-C2607
Maximum Ratings
Parameter Symbol BCP 54M BCP 55M BCP 56M Unit
Collector-emitter voltage 45 60 80 V
VCEO
Collector-base voltage 45 60 100
VCBO
Emitter-base voltage 5 5 5
VEBO
DC collector current 1 mA
IC
Peak collector current 1.5 A
ICM
Base current 100 mA
IB
Peak base current 200
IBM
1.7 W
Total power dissipation, TS ? 77 C Ptot
Junction temperature 150 C
Tj
Storage temperature -65...+150
Tstg
Thermal Resistance
1)
Junction ambient K/W
RthJA ? 98
Junction - soldering point
RthJS ? 43
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
1 Au |
5.8. bcp54_bcp55_bcp56.pdf Size:131K _siemens  |
 | NPN Silicon AF Transistors BCP 54
... BCP 56
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP 51 BCP 53 (PNP)
Type Marking Ordering Code Pin Configuration Package1)
(tape and reel) 1 2 3 4
BCP 54 BCP 54 Q62702-C2117 B C E C SOT-223
BCP 54-10 BCP 54-10 Q62702-C2119
BCP 54-16 BCP 54-16 Q62702-C2120
BCP 55 BCP 55 Q62702-C2148
BCP 55-10 BCP 55-10 Q62702-C2122
BCP 55-16 BCP 55-16 Q62702-C2123
BCP 56 BCP 56 Q62702-C2149
BCP 56-10 BCP 56-10 Q62702-C2125
BCP 56-16 BCP 56-16 Q62702-C2106
1)
For detailed information see chapter Package Outlines.
5.91
Semiconductor Group 1
BCP 54
... BCP 56
Maximum Ratings
Parameter Symbol Values Unit
BCP 54 BCP 55 BCP 56
Collector-emitter voltage VCE0 45 60 80 V
RBE ? 1k? VCER 45 60 100
Collector-base voltage VCB0 45 60 100
Emitter-base voltage VEB0 5
Collector current IC 1 A
Peak collector current ICM 1.5
Base current IB 100 mA
Peak base current IBM |
5.9. bcp56.pdf Size:42K _diodes  |
 | SOT223 NPN SILICON PLANAR
BCP56
MEDIUM POWER TRANSISTOR
ISSUE 3 AUGUST 1995
T
i I i
C
i II V
T T
E
C
T I D T I
B
ABSOLUTE MAXIMUM RATINGS.
T V IT
II V I V V
II i V I V 8 V
i V I V V
I I
i II I
Di i i T
i T T T
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
T I T IT DITI
II V V I
V I
II i V 8 V I
V I
i V V I
V I
II I V V
V V T
i I V V
II i V V I I
i V I
i T V V I V V
V I
i I V V
T i I V V
I V V
I V V
T i i T I V V
I i i I i D I ?
8
|
5.10. bcp56t1-d.pdf Size:104K _onsemi  |
 | BCP56T1 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-223
package, which is designed for medium power surface mount
http://onsemi.com
applications.
Features
MEDIUM POWER NPN SILICON
High Current: 1.0 A
HIGH CURRENT TRANSISTOR
The SOT-223 package can be soldered using wave or reflow. The
SURFACE MOUNT
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
Available in 12 mm Tape and Reel
COLLECTOR 2,4
Use BCP56T1 to Order the 7 inch/1000 Unit Reel
Use BCP56T3 to Order the 13 inch/4000 Unit Reel
BASE
PNP Complement is BCP53T1
1
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
EMITTER 3
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
4
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 80 Vdc
1
2
Collector-Base Voltage VCBO 100 Vdc
3
Emitter-Base Volt |
5.11. bcp56.pdf Size:165K _secos  |
 | BCP56
1A , 100V
NPN Silicon Medium Power Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-223
? For AF driver and output stages
? High collector current
A
? Low collector-emitter saturation voltage
M
? Complementary types: BCP53 (PNP)
4
Top View
C B
CLASSIFICATION OF hFE(2)
1
2
Product-Rank BCP56-16
3
K L
E
Range 100~250
D
F G H J
PACKAGE INFORMATION
Package MPQ Leader Size
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
SOT-223 2.5K 13’ inch
A 6.20 6.70 G - 0.10
B 6.70 7.30 H - -
C 3.30 3.70 J 0.25 0.35
D 1.42 1.90 K - -
E 4.50 4.70 L 2.30 REF.
F 0.60 0.82 M 2.90 3.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5 V
Collector Current -Continuous IC 1 A
Collector Power Dissipation PD 1.5 W
Storage T |
5.12. bcp56.pdf Size:341K _wietron  |
 | BCP56
NPN Silicon Planar Epitaxial Transistor
COLLECTOR
2, 4
4
1. BASE
2.COLLECTOR
P b Lead(Pb)-Free
3.EMITTER
BASE
4.COLLECTOR 1
1
2
3
3
SOT-223
EMITTER
ABSOLUTE MAXIMUM RATINGS (TA=25?C)
Symbol
Rating Value Unit
V
Collector-Emitter Voltage CEO V
80
VCBO
Collector-Base Voltage 100 V
VEBO
Emitter-Base Voltage 5 V
IC(DC)
Collector Current (DC) 1 A
PD
Total Device Disspation TA=25?C 2 W
Junction Temperature Tj 150 ?C
Storage, Temperature
Tstg -55 to +150 ?C
Device Marking
BCP56=BCP56
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Typ Max Unit
Collector-Emitter Breakdown Voltage
V(BR)CEO
80 - - V
(IC=1mA, IB=0)
Collector-Base Breakdown Voltage
- -
V
V(BR)CBO
100
(IC=100µA, IE=0)
Emitter-Base Breakdown Voltage
V(BR)EBO
5 - - V
(IE=10 µA, IC=0)
Collector-Emitter Cutoff Current
(VCB =30V , IE=0)
- - 100 nA
ICBO
(VCB =30V , IE=0 , Tj=125?C)
- - 10 uA
Emitter-Base Cutoff Current
- - 100 nA
I
EBO
(VEB=5V , IC=0)
WEITRON |
D'autres types de transistors... BC856AS
, BCP5210
, BCP5216
, BCP5310
, BCP5316
, BCP5510
, BCP5516
, BCP5610
, TIP122
, BCX5210
, BCX5216
, BCX5310
, BCX5316
, BCX5510
, BCX5516
, BCX5610
, BCX5616
.
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