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2SC5200 - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors

Marquage composant: 2SC5200

Matériau utilisé: Si

Polarité du transistor: NPN

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 150

Tension collecteur–base (maximale) Ucb: 250

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 250

Tension émetteur–base (maximale) Ueb: 5

Courant collecteur maximal (Ic): 17

Température maximale de jonction (Tj), °C:

Fréquence maximale de fonctionnement fT:

Capacite collecteur (Cc), pF:

Gain en courant DC hFE (hfe): 55

Boitier: TO264

Recherche équivalences (un remplaçant pour le transistor 2SC5200 )

2SC5200 PDF:

1.1. 2sc5200.pdf Size:148K _st

2SC5200
2SC5200

2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features High breakdown voltage VCEO = 230 V Typical fT = 30 MHz Application Audio power amplifier 3 2 1 Description TO-264 This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviou

1.2. 2sc5200.pdf Size:121K _toshiba

2SC5200
2SC5200

2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: V = 230 V (min) CEO Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO

1.3. 2sc5200_fjl4315.pdf Size:476K _fairchild_semi

2SC5200
2SC5200

January 2009 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A. TO-264 1 High Power Dissipation : 150watts. High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excellent Gain Linearity

1.4. 2sc5200.pdf Size:171K _utc

2SC5200
2SC5200

UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS ? FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 ? ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5200-x-T3L-T 2SC5200-x-T3L-T TO-3PL B C E Tube www.uniso

1.5. 2sc5200.pdf Size:276K _inchange_semiconductor

2SC5200
2SC5200

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type 2SA1943 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage application

D'autres types de transistors... ZXTP2029F , ZXTP2039F , ZXTP25060BFH , ZXTP25100BFH , ZXTP25100CFH , ZXTP25100CZ , ZXTP722MA , 2SA1943 , BC237 , BDW94CF , FJA13009 , FJA4210 , FJA4213 , FJA4310 , FJA4313 , FJB102 , FJB3307D .

 


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INDEX

Répertoire mondial rassemble environ 100 nouvelles references:

BJT TSC966CW | TSC966CT | TSC873CW | TSC873CT | TSC5988CT | TSC5904CX | TSC5401CT | TSC4505CX | TSC2411CX | TSC236CI | TSC236CZ | TRD236D | TRD136D | TMBT3906 | TMBT3904 | TK3906NND03 | TK3906LLD03 | TK3904NND03 | TK3904LLD03 | TK2907ATTD03 |

Les mots de moins de 2 lettres (chiffres) sont ignorés lors de la recherché