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CPH6153
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: CPH6153
Matériau utilisé: Si
Polarité du transistor: PNP
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 1.3
Tension collecteur–base (maximale) Ucb: 0
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 20
Tension émetteur–base (maximale) Ueb: 0
Courant collecteur maximal (Ic): 3
Température maximale de jonction (Tj), °C:
Fréquence maximale de fonctionnement fT: 0
Capacite collecteur (Cc), pF:
Gain en courant DC hFE (hfe): 200
Boitier:
Recherche équivalences (un remplaçant pour le transistor CPH6153
) CPH6153
PDF doc:
1.1. cph6153.pdf  Size:255K _sanyo  |
 | CPH6153
Ordering number : ENA1606
SANYO Semiconductors
DATA SHEET
PNP Epitaxial Planar Silicon Transistor
CPH6153
Load Switch Applications
Applications
• Load switch, DC-DC converter, motor drivers, charger.
Features
• Adoption of MBIT process.
• High current capacitance.
• Low collector-to-emitter saturation voltage.
• High speed switching.
• Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm).
• High allowable power dissipation.
• IECO is guaranteed for preventing reverse flow from the collector to the emitter.
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO -20 V
Collector-to-Emitter Voltage VCEO -20 V
Emitter-to-Base Voltage VEBO -5 V
Collector Current IC -3 A
Collector Current (Pulse) ICP -5 A
Base Current IB -600 mA
Collector Dissipation PC When mounted on ceramic substrate (600mm2?0.8mm) 1.3 W
Junction Temperature Tj 150 °C
Storage Temperature T |
5.1. cph6123_cph6223.pdf Size:55K _sanyo  |
 | Ordering number : ENN7386
CPH6123 / CPH6223
PNP / NPN Epitaxial Planar Silicon Transistors
CPH6123 / CPH6223
High-Current Switching Applications
Applications Package Dimensions
• DC-DC converter, relay drivers, lamp drivers, unit : mm
motor drivers, strobe. 2146A
[CPH6123 / CPH6223]
0.15
2.9
Features
5
6 4
• Adoption of MBIT process.
0.05
• High current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
1 2 3
• Ultrasmall package facilitates miniaturization
0.95
in end products (mounting height : 0.9mm).
1 : Collector
• High allowable power dissipation.
2 : Collector
3 : Base
4 : Emitter
0.4
5 : Collector
6 : Collector
Specifications ( ) : CPH6123
SANYO : CPH6
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--50)100 V
Collector-to-Emitter Voltage VCES (--50)100 V
Collector-to-Emitter Voltage VCEO (--)50 V
Emitter-to-Base Voltage VEBO (--)6 V
Collector Cur |
5.2. cph6121.pdf Size:47K _sanyo  |
 | Ordering number : ENN7260
CPH6121
PNP Epitaxial Planar Silicon Transistor
CPH6121
DC / DC Converter Applications
Applications
Package Dimensions
• Relay drivers, lamp drivers, motor drivers, strobes.
unit : mm
2146A
Features
[CPH6121]
0.15
2.9
• Adoption of MBIT process.
6 5 4
• High current capacitance.
• Low collector-to-emitter saturation voltage.
0.05
• High speed switching.
• Ultrasmall-sized package permitting applied sets to
be made small and slim (0.9mm).
1 2 3
0.95
• High allowable power dissipation.
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
0.4
6 : Collector
Specifications
SANYO : CPH6
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO --15 V
Collector-to-Emitter Voltage VCEO --12 V
Emitter-to-Base Voltage VEBO --5 V
Collector Current IC --3 A
Collector Current(Pulse) ICP --5 A
Base Current IB --600 mA
Collector Dissipation PC Mounted on a ceramic board (600 |
5.3. cph6101_cph6201.pdf Size:163K _sanyo  |
 | Ordering number:ENN5809
PNP/NPN Epitaxial Planar Silicon Transistors
CPH6101/CPH6201
High-Current Switching Applications
Applications Package Dimensions
· DC-DC converter, relay drivers, lamp drivers, motor
unit:mm
drivers, strobes.
2146A
[CPH6101/6201]
Features
0.15
2.9
· Adoption of FBET, MBIT processes.
6 5 4
· High current capacitance.
· Low collector-to-emitter saturation voltage. 0.05
· High-speed switching.
· Ultrasmall package permitting applied sets to be
made small and slim (0.9mm).
1 2 3
0.95 1 : Collector
· High allowable power dissipation.
2 : Collector
3 : Base
4 : Emitter
5 : Collector
( ) : CPH6101 0.4
6 : Collector
SANYO : CPH6
Specifications
Absolute Maximum Ratings at Ta = 25?C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (–)30 V
Collector-to-Emitter Voltage VCEO (–)30 V
Emitter-to-Base Voltage VEBO (–)6 V
Collector Current IC (–)2 A
Collector Current (Pulse) ICP (–)4 A
Base Current IB
(–)400 mA |
5.4. cph6104_cph6204.pdf Size:212K _sanyo  |
 | Ordering number:ENN5808
PNP/NPN Epitaxial Planar Silicon Transistors
CPH6104/CPH6204
High-Current Switching Applications
Applications Package Dimensions
· DC-DC converter, relay drivers, lamp drivers, motor
unit:mm
drivers, strobes.
2146A
[CPH6104/6204]
Features
0.15
2.9
· Adoption of FBET, MBIT processes.
5
6 4
· High current capacitance.
· Low collector-to-emitter saturation voltage. 0.05
· High-speed switching.
· Ultrasmall package permitting applied sets to be
made small and slim (0.9mm).
1 2 3
0.95 1 : Collector
· High allowable power dissipation.
2 : Collector
3 : Base
4 : Emitter
5 : Collector
( ) : CPH6104 0.4
6 : Collector
SANYO : CPH6
Specifications
Absolute Maximum Ratings at Ta = 25?C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (–)15 V
Collector-to-Emitter Voltage VCEO (–)15 V
Emitter-to-Base Voltage VEBO (–)5 V
Collector Current IC (–)1.5 A
Collector Current (Pulse) ICP (–)3 A
Base Current IB (–)200 |
5.5. cph6102_cph6202.pdf Size:199K _sanyo  |
 | Ordering number:ENN5810
PNP/NPN Epitaxial Planar Silicon Transistors
CPH6102/CPH6202
High-Current Switching Applications
Applications Package Dimensions
· DC-DC converter, relay drivers, lamp drivers, motor
unit:mm
drivers, strobes.
2146A
[CPH6102/6202]
Features
0.15
2.9
· Adoption of FBET, MBIT processes.
5
6 4
· High current capacitance.
· Low collector-to-emitter saturation voltage. 0.05
· High-speed switching.
· Ultrasmall package permitting applied sets to be
made small and slim (0.9mm).
1 2 3
0.95 1 : Collector
· High allowable power dissipation.
2 : Collector
3 : Base
4 : Emitter
5 : Collector
( ) : CPH6102 0.4
6 : Collector
SANYO : CPH6
Specifications
Absolute Maximum Ratings at Ta = 25?C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (–)60 V
Collector-to-Emitter Voltage VCEO (–)50 V
Emitter-to-Base Voltage VEBO (–)5 V
Collector Current IC (–)1.0 A
Collector Current (Pulse) ICP (–)2 A
Collector Dissipation P |
5.6. cph6122.pdf Size:48K _sanyo  |
 | Ordering number : EN7225A
CPH6122
SANYO Semiconductors
DATA SHEET
PNP Epitaxial Planar Silicon Transistor
CPH6122
DC / DC Converter Applications
Applications
• Relay drivers, lamp drivers, motor drivers, flash.
Features
• Adoption of MBIT process.
• High current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
• Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm).
• High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO --30 V
Collector-to-Emitter Voltage VCEO --30 V
Emitter-to-Bass Voltage VEBO --5 V
Collector Current IC --3 A
Collector Current (Pulse) ICP --5 A
Bass Current IB --600 mA
Collector Dissipation PC Mounted on ceramic board (600mm2?0.8mm) 1.3 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Sy |
5.7. cph6103_cph6203.pdf Size:187K _sanyo  |
 | Ordering number:ENN5807
PNP/NPN Epitaxial Planar Silicon Transistors
CPH6103/CPH6203
High-Current Switching Applications
Applications Package Dimensions
· DC-DC converter, relay drivers, lamp drivers, motor
unit:mm
drivers, strobes.
2146A
[CPH6103/6203]
Features
0.15
2.9
· Adoption of FBET, MBIT processes.
5
6 4
· High current capacitance.
· Low collector-to-emitter saturation voltage. 0.05
· High-speed switching.
· Ultrasmall package permitting applied sets to be
made small and slim (0.9mm).
1 2 3
0.95 1 : Collector
· High allowable power dissipation.
2 : Collector
3 : Base
4 : Emitter
5 : Collector
( ) : CPH6103 0.4
6 : Collector
SANYO : CPH6
Specifications
Absolute Maximum Ratings at Ta = 25?C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (–)60 V
Collector-to-Emitter Voltage VCEO (–)50 V
Emitter-to-Base Voltage VEBO (–)6 V
Collector Current IC (–)2 A
Collector Current (Pulse) ICP (–)4 A
Base Current IB (–)400 mA |
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