DTA114TE - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: DTA114TE

Matériau utilisé: Si

Polarité du transistor: PNP

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0

Tension collecteur–base (maximale) Ucb: 0

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 50

Tension émetteur–base (maximale) Ueb: 0

Courant collecteur maximal (Ic): 0.1

Température maximale de jonction (Tj), °C:

Fréquence maximale de fonctionnement fT: 0

Capacite collecteur (Cc), pF:

Gain en courant DC hFE (hfe): 160

Boitier: SC75-3_SOT416-3

Recherche équivalences (un remplaçant pour le transistor DTA114TE )

DTA114TE PDF doc:

1.1. pdta114te_2.pdf Size:52K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA114TE PNP resistor-equipped transistor Preliminary specification 1998 Jul 23 Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114TE FEATURES • Built-in bias resistor R1 (typ. 10 k?) • Simplification of circuit design • Reduces number of components handbook, 4 columns 3 and board space. 3 R1 1 APPLICATIONS 2 12 • Especially suitable for space Top view MAM359 reduction in interface and driver circuit applications • Inverter circuit configurations without use of an external resistor. Fig.1 Simplified outline (SC-75) and symbol. DESCRIPTION PNP resistor-equipped transistor in MARKING an SC-75 plastic package. NPN complement: PDTC114TE. TYPE MARKING 1 3 NUMBER CODE PINNING PDTA114TE 11 2 MGA893 - 1 PIN DESCRIPTION 1 base/input Fig.2 Equivalent inverter 2 emitter/ground (+) symbol. 3 collector/o

1.2. pdta114te_ 11 _sot416.pdf Size:29K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA114TE PNP resistor-equipped transistor Preliminary specification 1998 Jul 23 Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114TE FEATURES • Built-in bias resistor R1 (typ. 10 k?) • Simplification of circuit design • Reduces number of components handbook, 4 columns 3 and board space. 3 R1 1 APPLICATIONS 2 12 • Especially suitable for space Top view MAM359 reduction in interface and driver circuit applications • Inverter circuit configurations without use of an external resistor. Fig.1 Simplified outline (SC-75) and symbol. DESCRIPTION PNP resistor-equipped transistor in MARKING an SC-75 plastic package. NPN complement: PDTC114TE. TYPE MARKING 1 3 NUMBER CODE PINNING PDTA114TE 11 2 MGA893 - 1 PIN DESCRIPTION 1 base/input Fig.2 Equivalent inverter 2 emitter/ground (+) symbol. 3 collector/o

1.3. pdta114te_2.pdf Size:52K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA114TE PNP resistor-equipped transistor Preliminary specification 1998 Jul 23 Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114TE FEATURES • Built-in bias resistor R1 (typ. 10 k?) • Simplification of circuit design • Reduces number of components handbook, 4 columns 3 and board space. 3 R1 1 APPLICATIONS 2 12 • Especially suitable for space Top view MAM359 reduction in interface and driver circuit applications • Inverter circuit configurations without use of an external resistor. Fig.1 Simplified outline (SC-75) and symbol. DESCRIPTION PNP resistor-equipped transistor in MARKING an SC-75 plastic package. NPN complement: PDTC114TE. TYPE MARKING 1 3 NUMBER CODE PINNING PDTA114TE 11 2 MGA893 - 1 PIN DESCRIPTION 1 base/input Fig.2 Equivalent inverter 2 emitter/ground (+) symbol. 3 collector/o

1.4. dta114te-tua-tka_94_sot416_323_346.pdf Size:57K _rohm

Transistors Digital transistors (built in resistor) DTA114TE / DTA114TUA / DTA114TKA / DTA114TSA FFeatures FExternal dimensions (Units: mm) 1) Built-in circuit enables the configu- ration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow positive biasing of the input. They also have the advan- tage of almost completely eliminat- ing parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. FStructure PNP digital transistor (With single built in resistor) FEquivalent circuit (96-253-A114T) 330 Transistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications 331 Transistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA FElectrical characteristic curves 332

1.5. dta114te.pdf Size:56K _rohm

Transistors Digital transistors (built in resistor) DTA114TE / DTA114TUA / DTA114TKA / DTA114TSA FFeatures FExternal dimensions (Units: mm) 1) Built-in circuit enables the configu- ration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow positive biasing of the input. They also have the advan- tage of almost completely eliminat- ing parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. FStructure PNP digital transistor (With single built in resistor) FEquivalent circuit (96-253-A114T) 330 Transistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications 331 Transistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA FElectrical characteristic curves 332

1.6. dta114te.pdf Size:183K _mcc

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth DTA114TE Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating PNP Digital Transistor • Moisure Sensitivity Level 1 • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit) • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects SOT-523 • Only the on/off conditions need to be set for operation, making A device design easy D Absolute Maximum Ratings 3 1. Base C B Parameter Symbol Value Unit 2. Emitter 1 2 3. Collector Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -5

1.7. dta114te.pdf Size:729K _htsemi

DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA/DTA114TCA TRANSISTOR(PNP) FEATURES · Built-in bias resistors enable the configuration of an inverter circuit without connecting ex temal input resistors. · The bias resistors conisit of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely Eliminating parasitic effects. · Only the on/off conditions need to be set for operation, marking device design easy. PIN CONNENCTIONS AND MARKING DTA114TE DTA114TUA (1) Base (2) Emitter (3) Collector SOT-323 Addreviated symbol: 94 Addreviated symbol: 94 SOT-523 DTA114TKA DTA114TCA DTA114ECA (1) Base (2) Emitter (3) Collector SOT-23 Addreviated symbol: 94 SOT-23-3L Addreviated symbol: 94 DTA114TSA TO-92S 1 JinYu www.htsemi.com semiconductor Date:2011/05 DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA/DTA114TCA MAXIMUM RA TINGS* TA=25? unless otherwise noted Symbol Para

1.8. dta114te.pdf Size:294K _willas

FM120-M WILLAS DTA114TE THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. Features SOT-523 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • • High surge capability. • Guardring for overvoltage protection. 0.071(1.8) • Ultra high-speed switching. .067(1.0.05)6(1.4) 70 • Silicon epitaxial planar chip, metal sil • Epoxy meets UL 94 V-0 flammability ratingicon junction. .059(1.50) • Lead-free parts me • Moisure Sensitivity Level 1et environmental standards of MIL-STD-19500 /228 • Built-in bias resistors enable the configuration of an inverter circui

D'autres types de transistors... CPH6153 , CPH6223 , CPH6501 , CPH6531 , CPH6532 , D44VH , D45VH , DTA114EE , BC337 , DTA114YE , DTA115EE , DTA143EE , DTA143ZE , DTA144EE , DTC114EE , DTC114TE , DTC114YE .