RN2111ACT - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: RN2111ACT

Matériau utilisé: Si

Polarité du transistor: PNP

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0

Tension collecteur–base (maximale) Ucb: 0

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 50

Tension émetteur–base (maximale) Ueb: 0

Courant collecteur maximal (Ic): 0.1

Température maximale de jonction (Tj), °C:

Fréquence maximale de fonctionnement fT:

Capacite collecteur (Cc), pF:

Gain en courant DC hFE (hfe): 0

Boitier: SOT-883_CST3

Recherche équivalences (un remplaçant pour le transistor RN2111ACT )

RN2111ACT - Fiche technique PDF, Datasheet

1.1. rn2110act_rn2111act_090417.pdf Size:152K _toshiba

(OFF) (V) ? ? 3 2009-04-17 COLLECTOR CURRENT ? IC (uA) COLLECTOR CURRENT ? IC (mA) COLLECTOR CURRENT ? IC (uA) COLLECTOR CURRENT ? IC (mA) RN2110ACT,RN2111ACT hFE - IC VCE (sat) - IC RN2110ACT RN2110ACT 1000 -1 COMMON EMITTER Ta=100°C IC / IB = 20 25 -25 100 -0.1 Ta=100°C 25 -25 COMMON EMITTER VCE = -5V 10 -0.01 -0.1 -1 -10 -100 -0.1 -1 -10 -100 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) ? ? hFE - IC VCE (sat) - IC RN2111ACT RN2111ACT 1000 -1 CO

4.1. rn2110ct_rn2111ct_090417.pdf Size:154K _toshiba

OR CURRENT IC (mA) RN2110CT,RN2111CT hFE - IC VCE(sat) - IC RN2110CT RN2110CT 10000 -1000 Ta=100°C 1000 -100 Ta=100°C 25 -25 25 100 -10 -25 EMITTER COMMON EMITTER COMMON VCE=-5V IC/IB=20 10 -1 -0.1 -1 -10 -100 -0.1 -1 -10 -100 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) RN2111CT RN2111CT VCE(sat) - IC hFE - IC -1000 10000 Ta=100°C -100 1000 Ta=100°C 25 -25 25 100 -10 -25 EMITTER COMMON EMITTER COMMON VCE=-5V IC/IB=20 10 -1 -0.1 -1 -10 -100 -0.

4.2. rn2110ft-rn2111ft.pdf Size:122K _toshiba

4.3. rn2110mfv_rn2111mfv.pdf Size:163K _toshiba

= 100°C 25 -1 -100 -25 -0.1 -10 -0.1 -1 -10 -100 -0.2 -0.4 -0.6 -0.8 -1 -1.2 INPUT VOLTAGE VI (ON) (V) INPUT VOLTAGE VI (OFF) (V) ? ? 3 2010-05-14 (?A) COLLECTOR CURRENT ? IC (uA) COLLECTOR CURRENT ? IC (mA) (?A) COLLECTOR CURRENT ? IC (uA) COLLECTOR CURRENT ? IC (mA) RN2110MFV,RN2111MFV hFE - IC VCE(sat) - IC RN2110MFV RN2110MFV 1000 -1 COMMON EMITTER Ta = 100°C IC / IB = 10 25 -25 100 -0.1 Ta = 100°C COMMON EMITTER 25 -25 VCE = -5 V -0.01 10 -0.1

4.4. rn2110f-rn2111f.pdf Size:109K _toshiba

ical Characteristics (Ta = 25°C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current ICBO ? VCB = -50V, IE = 0 ? ? -100 nA Emitter cut-off current IEBO ? VEB = -5V, IC = 0 ? ? -100 nA DC current gain hFE ? VCE = -5V, IC = -1mA 120 ? 400 Collector-emitter saturation voltage VCE (sat) ? IC = -5mA, IB = -0.25mA ? -0.1 -0.3 V Transition frequency fT ? VCE = -10V, IC = -5mA ? 200 ? MHz Collector output capacitance Cob ? VCB = -10V, IE = 0, f = 1M

4.5. rn2110fs_rn2111fs_071101.pdf Size:114K _toshiba

OR CURRENT IC (?A) RN2110FS,RN2111FS RN2110FS RN2110FS hFE - IC VCE(sat) - IC 10000 -1000 Ta=100°C 1000 -100 Ta=100°C 25 -25 25 100 -10 -25 EMITTER COMMON EMITTER COMMON VCE=-5V IC/IB=20 -1 10 -0.1 -1 -10 -100 -0.1 -1 -10 -100 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) RN2111FS RN2111FS hFE - IC VCE(sat) - IC 10000 -1000 Ta=100°C 1000 -100 Ta=100°C 25 -25 25 100 -10 -25 EMITTER COMMON EMITTER COMMON VCE=-5V IC/IB=20 10 -1 -0.1 -1 -10 -100 -0.1 -

4.6. rn2110-rn2111.pdf Size:102K _toshiba

D'autres types de transistors... RN2109F , RN2109MFV , RN2109 , RN2110ACT , RN2110CT , RN2110FS , RN2110MFV , RN2110 , BC137 , RN2111CT , RN2111FS , RN2111F , RN2111MFV , RN2111 , RN2112ACT , RN2112CT , RN2112FS .