DTA114EEB - Datasheet. Les principales caractéristique. Répertoire mondial des transistors

100mA / 50V Digital transistors (with built-in resistors) DTA114EEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F 1.6 0.7 0.26 Features (3) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2) with complete isolation to allow negative biasing 0.13 0.5 0.5 1.0 of the input. They also have the advantage of almost completely eliminating parasitic effects. (1) IN Each lead has same dimensions 3) Only the on/off conditions need to be set for (2) GND (3) OUT operation, making the device design easy. Abbreviated symbol : 14 Structure Inner circuit PNP silicon epitaxial planar transistor type (Resistor built-in) OUT R1 IN R2 Packaging specifications GND(+) Package EMT3F Packaging type Taping IN OUT Code TL Part No. Basic ordering unit (pieces) 3000 GND(+) D

2.1. pdta114ee_2.pdf Size:57K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA114EE PNP resistor-equipped transistor Preliminary specification 1998 Jul 23 Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EE FEATURES � Built-in bias resistors R1 and R2 (typ. 10 k? each) � Simplification of circuit design handbook, halfpage 3 3 � Reduces number of components R1 1 and board space. R2 2 12 APPLICATIONS Top view MAM345 � Especially suitable for space reduction in interface and driver circuits � Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC-75) and symbol. DESCRIPTION MARKING PNP resistor-equipped transistor in an SC-75 plastic package. TYPE MARKING NPN complement: PDTC114EE. NUMBER CODE 1 3 PDTA114EE 03 PINNING 2 MGA893 - 1 PIN DESCRIPTION 1 base/input Fig.2 Equivalent inverter 2 emitter/ground (+) symbol. 3 collec

2.2. pdta114eef_2.pdf Size:54K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor 1999 May 21 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES PINNING � Power dissipation comparable to SOT23 PIN DESCRIPTION � Built-in bias resistors R1 and R2 (typ. 10 k? each) 1 base/input � Simplification of circuit design 2 emitter/ground (+) � Reduces number of components and board space. 3 collector/output APPLICATIONS 3 handbook, halfpage � Especially suitable for space reduction in interface and 3 R1 driver circuits 1 � Inverter circuit configurations without use of external R2 resistors. 2 12 Top view MAM413 DESCRIPTION Fig.1 Simplified outline (SC-89; SOT490) and symbol. PNP resistor-equipped transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complement: PDTC114EEF. MARKING 1 3 TYPE NUMBER MARKING CODE PDTA114

2.3. pdta114ee_2.pdf Size:57K _philips

2.4. pdta114eef_2.pdf Size:54K _philips

2.5. dta114ee.pdf Size:152K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTA114EM / DTA114EE / DTA114EUA / DTA114EKA ?Applications Inverter, Interface, Driver ?Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. ?Structure PNP epitaxial planar silicon transistor (Resistor built-in type) ?Dimensions (Unit : mm) 1.6 0.7 DTA114EM DTA114EE 1.2 0.55 0.3 0.32 (3) ( ) 3 (1)(2) 0.22 ( ) ( ) 2 1 0.13 (1) GND (1) IN 0.4 0.4 0.5 0.2 0.2 (2) GND 0.15 (2) IN 0.8 0.5 0.5 (3) OUT (3) OUT 1.0 Each lead has same dimensions Each lead has same dimensions ROHM : VMT3 ROHM : EMT3 Abbrev

2.6. dta114eet_6a-m_sot416.pdf Size:135K _onsemi

DTA114EET1 SERIES Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor http://onsemi.com Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base�emitter resistor. The BRT eliminates these individual components by PNP SILICON integrating them into a single device. The use of a BRT can reduce BIAS RESISTOR both system cost and board space. The device is housed in the TRANSISTORS SC�75/SOT�416 package which is designed for low power surface mount applications. � Simplifies Circuit Design � Reduces Board Space 3 � Reduces Component Count 2 � The SC�75/SOT�416 package can be soldered using 1 wave or reflow. The modified gull�winged leads absorb thermal stress during soldering eliminatin

2.7. dta114eet1.pdf Size:108K _onsemi

DTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http://onsemi.com device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a PNP SILICON BIAS base-emitter resistor. The BRT eliminates these individual RESISTOR TRANSISTORS components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power PIN 3 COLLECTOR surface mount applications. (OUTPUT) PIN 1 R1 Features BASE (INPUT) � Simplifies Circuit Design R2 � Reduces Board Space PIN 2 � Reduces Component Count EMITTER (GROUND) � The SC-75/SOT-416 package can be soldered using wave or reflo

2.8. dta114ee.pdf Size:342K _htsemi

DT A114EE/DTA114EUA/DTA114EKA /DTA114ESA/DTA114ECA Digital transistors (PNP) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost completely eliminating parasitic effects. 3. Only the on/off conditions need to be set for operation, making device design easy. PIN CONNENCTIONS AND MARKING DTA114EE DTA114EUA SOT-323 SOT-523 Addreviated symbol: 14 Addreviated symbol: 14 DTA114EKA DTA114ECA DTA114ECA SOT-23-3L SOT-23 Addreviated symbol: 14 Addreviated symbol: 14 DTA114ESA TO-92S 1 JinYu www.htsemi.com semiconductor Date:2011/05 DT A114EE/DTA114EUA/DTA114EKA /DTA114ESA/ DTA114ECA Absolute maximum ratings(Ta=25?) Limits (DTA114E?) Parameter Symbol Unit E UA CA KA SA Supply voltage VCC -50

2.9. dta114ee.pdf Size:800K _wietron

DTA114EE Series Bias Resistor Transistor PNP Silicon 3 3 P b Lead(Pb)-Free COLLECTOR 1 2 3 R1 1 R2 BASE SC-89 (SOT-523F) 2 EMITTER Maximum Ratings (TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage 50 V VCEO VCBO V Collector-Base Voltage 50 mA IC 100 Collector Current-Continuous Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board 200 mW FR-4 Board(1) TA=25?C PD 1.6 mW/ ?C Derate above 25?C Thermal Resistance, Junction to Ambient(1) R?JA 600 ?C/W Total Device Dissipation FR-5 Board 300 mW FR-4 Board(2) TA=25?C PD 2.4 mW/ ?C Derate above 25?C R?JA 400 ?C/W Thermal Resistance, Junction to Ambient(2) TJ Junction Temperature Range -55 to +150 ?C Storage Temperature Range Tstg -55 to +150 ?C 1.FR-4 @ Minimum pad 2.FR-4 @1.0 x 1.0 Inch pad Device Marking and ResistorValues Device Marking R1(K) R2(K) Device Marking R1(K) R2(K) 10 DTA114EE 6A 10 DTA123EE 6H 2.2 2.2

2.10. dta114ee.pdf Size:437K _willas

FM120-M WILLAS THRU DTA114EE PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • Hi Featuresgh current capability, low forward voltage drop. SOT-523 • High surge capability. • Epitaxial Planar Die Construction • Guardring for overvoltage protection. • Untrl Small Surface Mount Package 0.071(1.8) • Ultra high-speed switching. • Built-In Biasing Resistors 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. • .067(1.70) • Lead-free parts meet environmental standards of MIL-STD-19500 /228 .059(1.50) • RoHS product for packing code su

D'autres types de transistors... DTA043EUB , DTA043ZEB , DTA043ZM , DTA043ZUB , DTA044EEB , DTA044EM , DTA044EUB , DTA113ZE , BC549 , DTA114EM , DTA114EUB , DTA114WE , DTA114YEB , DTA114YM , DTA114YUB , DTA115EEB , DTA115EM .


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