2N6122
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: 2N6122
Matériau utilisé: Si
Polarité du transistor: NPN
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 40
Tension collecteur–base (maximale) Ucb: 60
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 60
Tension émetteur–base (maximale) Ueb: 5
Courant collecteur maximal (Ic): 4
Température maximale de jonction (Tj), °C: 150
Fréquence maximale de fonctionnement fT: 2
Capacite collecteur (Cc), pF:
Gain en courant DC hFE (hfe): 25
Boitier: TO220
Recherche équivalences (un remplaçant pour le transistor 2N6122
) 2N6122
PDF doc:
1.1. 2n6121_2n6122_2n6123_2n6124_2n6125_2n6126.pdf  Size:83K _central  |
 | TM
Central
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110 • Fax: (631) 435-1824
www.centralsemi.com
|
1.2. 2n6121_2n6122_2n6123.pdf Size:120K _inchange_semiconductor  |
 | Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to PNP type : 2N6124 ;2N6125 ;2N6126 APPLICATIONS Ў¤ For use in power amplifier and switching circuit applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2N6121 2N6122 2N6123
Absolute maximum ratings(Ta=25Ўж )
SYMBOL
PARAMETER
2N6121 2N6122
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
IN
CHA
NG S
2N6123 2N6121 2N6122 2N6123
Open emitter
OND MIC E
CONDITIONS
TOR UC
VALUE 45 60 80 45 60 80
UNIT
V
Open base
V
VEBO IC ICM IB PT Tj Tstg
Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature
Open collector
5 4 8 1
V A A A W Ўж Ўж
TC=25Ўж
40 150 -65~150
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance f |
5.1. 2n6121-26.pdf Size:190K _mospec  |
 | A
A
A
A
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5.2. 2n6124_2n6125_2n6126.pdf Size:120K _inchange_semiconductor  |
 | Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to PNP type : 2N6121 ;2N6122 ;2N6123 APPLICATIONS Ў¤ For use in power amplifier and switching circuit applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
2N6124 2N6125 2N6126
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25Ўж )
SYMBOL PARAMETER CONDITIONS
VCBO
Collector-base voltage
CHA
2N6124 2N6125 Open emitter
VCEO
Collector-emitter voltage
VEBO IC ICM IB PT Tj Tstg
Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature
IN
NG S
2N6124 2N6125 2N6126
2N6126
Open base
CON EMI
TOR DUC
VALUE -45 -60 -80 -45 -60 -80 -5 -4 -8 -1
UNIT
V
V
Open collector
V A A A W Ўж Ўж
TC=25Ўж
40 150 -65~150
THERMAL CHARACTERISTICS |
5.3. 2n6129_2n6130_2n6131.pdf Size:120K _inchange_semiconductor  |
 | Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION Ў¤ With TO-220 package Ў¤ High power dissipation Ў¤ Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS Ў¤ Power amplifier and medium speed switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2N6129 2N6130 2N6131
Absolute maximum ratings(Ta=25Ўж )
SYMBOL
PARAMETER
2N6129 2N6130
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CHA IN
NG S
2N6131 2N6129 2N6130 2N6131
Open emitter
OND MIC E
CONDITIONS
TOR UC
VALUE 40 60 80 40 60 80
UNIT
V
Open base
V
VEBO IC IB PT Tj Tstg
Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature
Open collector
5 7 3
V A A W Ўж Ўж
TC=25Ўж
50 150 -65~150
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction t |
D'autres types de transistors... 2N6109
, 2N611
, 2N6110
, 2N6111
, 2N6112
, 2N6116
, 2N612
, 2N6121
, 9014
, 2N6123
, 2N6124
, 2N6125
, 2N6126
, 2N6127
, 2N6128
, 2N6129
, 2N613
.
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