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2N1200
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: 2N1200
Matériau utilisé: Si
Polarité du transistor: NPN
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.15
Tension collecteur–base (maximale) Ucb: 20
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 14
Tension émetteur–base (maximale) Ueb: 1
Courant collecteur maximal (Ic): 0.05
Température maximale de jonction (Tj), °C: 150
Fréquence maximale de fonctionnement fT: 25
Capacite collecteur (Cc), pF: 3.5
Gain en courant DC hFE (hfe): 7
Boitier: TO9
Recherche équivalences (un remplaçant pour le transistor 2N1200
) 2N1200
- Fiche technique PDF, Datasheet
5.1. mgv12n120d.pdf  Size:83K _motorola  |
 | 10 Adc) gfe — 12 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Cies — 930 — pF
(V 25 Vdc V 0 Vdc
(VCE = 25 Vdc, VGE = 0 Vdc,
Output Capacitance
Coes — 126 —
f = 1.0 MHz)
f = 1.0 MHz)
Transfer Capacitance Cres — 16 —
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time td(on) — 80 — ns
(VCC = 720 Vdc IC =10Adc
(VCC = 720 Vdc, IC = 10 Adc,
Rise Time tr — 114 —
VGE = 15 Vdc, L = 300 mH
, m
GE
RG = 20 ?, TJ = 25°C)
Turn–Off Delay Time td(off) — 66 —
Energy losses include “tail”
E |
5.2. mgv12n120drev0.pdf Size:79K _motorola  |
 | 10 Adc) gfe — 12 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Cies — 930 — pF
(V 25 Vdc V 0 Vdc
(VCE = 25 Vdc, VGE = 0 Vdc,
Output Capacitance
Coes — 126 —
f = 1.0 MHz)
f = 1.0 MHz)
Transfer Capacitance Cres — 16 —
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time td(on) — 80 — ns
(VCC = 720 Vdc IC =10Adc
(VCC = 720 Vdc, IC = 10 Adc,
Rise Time tr — 114 —
VGE = 15 Vdc, L = 300 mH
, m
GE
RG = 20 ?, TJ = 25°C)
Turn–Off Delay Time td(off) — 66 —
Energy losses include “tail”
E |
5.3. mgw12n120.pdf Size:228K _motorola  |
 | (VGE = 15 Vdc, IC = 5.0 Adc) — 2.51 3.37
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C) — 2.36 —
(VGE = 15 Vdc, IC = 10 Adc) — 3.21 4.42
Gate Threshold Voltage VGE(th) Vdc
(VCE = VGE, IC = 1.0 mAdc) 4.0 6.0 8.0
Threshold Temperature Coefficient (Negative) — 10 — mV/°C
Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc) gfe — 12 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Cies — 930 — pF
(VCE = 25 Vdc, VGE = 0 Vdc,
(VCE = 25 Vdc, VGE = 0 Vdc,
Output Capacitance
Coes — 126 —
f = 1.0 M |
5.4. mgw12n120d.pdf Size:213K _motorola  |
 | dy Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES — — 250 nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage VCE(on) Vdc
(VGE = 15 Vdc, IC = 5.0 Adc) — 2.71 3.37
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C) — 3.78 —
(VGE = 15 Vdc, IC = 10 Adc) — 3.72 4.42
Gate Threshold Voltage VGE(th) Vdc
(VCE = VGE, IC = 1.0 mAdc) 4.0 6.0 8.0
Threshold Temperature Coefficient (Negative) — 10 — mV/°C
Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc) gfe — 12 — Mhos
DYNAMIC CHARACTERI |
5.5. mtw12n120d.pdf Size:250K _motorola  |
 | dy Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES — — 250 nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage VCE(on) Vdc
(VGE = 15 Vdc, IC = 5.0 Adc) — 2.71 3.37
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C) — 3.78 —
(VGE = 15 Vdc, IC = 10 Adc) — 3.72 4.42
Gate Threshold Voltage VGE(th) Vdc
(VCE = VGE, IC = 1.0 mAdc) 4.0 6.0 8.0
Threshold Temperature Coefficient (Negative) — 10 — mV/°C
Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc) gfe — 12 — Mhos
DYNAMIC CHARACTERI |
5.6. mtv12n120d.pdf Size:107K _motorola  |
 | 10 Adc) gfe — 12 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Cies — 930 — pF
(VCE = 25 Vdc, VGE = 0 Vdc,
(VCE = 25 Vdc, VGE = 0 Vdc,
Output Capacitance
Coes — 126 —
f = 1.0 MHz)
f = 1.0 MHz)
f = 1.0 MHz)
Transfer Capacitance Cres — 16 —
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time td(on) — 80 — ns
(VCC = 720 Vdc, IC = 10 Adc,
(VCC = 720 Vdc, IC = 10 Adc,
Rise Time tr — 114 —
VGE = 15 Vdc, L = 300 mH
VGE = 15 Vdc, L = 300 mH
VGE = 15 Vdc, L = 300 mH
mH
RG = 20 ?, TJ = |
5.7. sgw02n120_rev2g.pdf Size:808K _infineon  |
 | 3 30 ns
Tj=25°C,
VCC=800V,IC=2A, - 16 21
Rise time tr
VGE=15V/0V,
Turn-off delay time td(of f ) - 260 340
RG=91?,
Fall time tf - 61 80
L? 1)=180nH,
Turn-on energy Eon - 0.16 0.21 mJ
C? 1)=40pF
Turn-off energy Eof f - 0.06 0.08
Energy losses include
Total switching energy Et s “tail” and diode - 0.22 0.29
reverse recovery.
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay |
5.8. sgb02n120_rev2_3.pdf Size:433K _infineon  |
 | Tj=25°C,
VCC=800V,IC=2A, - 16 21
Rise time tr
VGE=15V/0V,
Turn-off delay time td(of f ) - 260 340
RG=91?,
Fall time tf - 61 80
L? 1)=180nH,
Turn-on energy Eon - 0.16 0.21 mJ
C? 1)=40pF
Turn-off energy Eof f - 0.06 0.08
Energy losses include
Total switching energy Et s “tail” and diode
- 0.22 0.29
reverse recovery.
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td( |
5.9. sgp02n120_sgd02n120_sgi02n120_rev2_3g.pdf Size:376K _infineon  |
 | =15V,tSC?10µs - 24 - A
100V?VCC?1200V,
Tj ? 150°C
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2 Rev. 2.3 Sep. 07
Power Semiconductors
SGP02N120
SGD02N120, SGI02N120
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characte |
5.10. skb02n120_rev2_3g.pdf Size:1156K _infineon  |
 | between short circuits: >1s.
2 Rev. 2.3 Oct 07
Power Semiconductors
SKB02N120
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) - 23 30 ns
Tj=25°C,
VCC=800V,IC=2A, - 16 21
Rise time tr
VGE=15V/0V,
Turn-off delay time td(of f ) - 260 340
RG=91?,
Fall time tf - 61 80
L? 1)=180nH,
Turn-on energy Eon - 0.16 0.21 mJ
C? 1)=40pF
Turn-off energy Eof f Energy losses i |
5.11. skp02n120_rev2g_2[1].pdf Size:364K _infineon  |
 | Tj ? 150°C
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2 Rev. 2.2 Sep 07
Power Semiconductors
SKP02N120
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) - 23 30 ns
Tj=25°C,
VCC=800V,IC=2A, - 16 21
Rise time tr
VGE=15V/0V,
Turn-off delay time td(of f ) - 260 340
RG=91?,
Fall time tf - 61 80
L? 1)=180nH,
Turn-on energy Eon - 0 |
5.12. ixga12n120a2_ixgp12n120a2.pdf Size:578K _ixys  |
 | 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the followin |
5.13. ixgy2n120.pdf Size:128K _ixys  |
 | 796 5,063,307 5,237,481 5,381,025
IXGY 2N120
Fig. 2. Extended Output Characteristics
Fig. 1. Saturation Voltage Characteristics @ 25oC
15
5
VGE = 15V
TJ = 25oC
TJ = 25OC
9V
4
13V
VGE = 15V
7V
13V
10
11V
11V
3
9V
2
5
7V
1
5V
5V
0
0
0 5 10 15
0 2 4 6 8 10
VCE - Volts
VCE - Volts
Fig. 3. Saturation Voltage Characteristics @ 125oC
Fig. 4. Temperature Dependence of VCE(SAT)
5
2.0
TJ = 125OC VGE = 15V
IC = 5A
1.8
4
VGE = 15V
9V
13V
1.6
11V
3
1.4
7V
2 1. |
5.14. ixth12n120.pdf Size:545K _ixys  |
 | 534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
IXTH 12N120
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25?C @ 25?C
12 20
VGS = 10V
VGS = 10V
11
18
8V
8V
10
7.5V 16
9
7V 14
6.5V
8
12
7
6 10
7V
6.5V
5
8
4
6
6.5V
3
4
6V
2
6V
2
1
0
0
0 2 4 6 8 10 12 14 16 18
0 3 6 9 12 15 18 21 24 27 30
VD S - Volts
VD S - Volts
Fig. 3 |
5.15. ixty02n120p_ixtp02n120p.pdf Size:123K _ixys  |
 | or knowledge and experience, and constitute a
D1 4.32 5.21 0.170 0.205
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
conditions, and dimensions without notice.
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
IXYS Reserves The Right to Change Limits, Test Conditions, |
5.16. ixga12n120a3_ixgp12n120a3_ixgh12n120a3.pdf Size:201K _ixys  |
 | 0.232 0.252
R 4.32 5.49 .170 .216
Terminals: 1 - Gate 2 - Collector
3 - Emitted S 6.15 BSC 242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5 |
5.17. ixgn82n120c3h1.pdf Size:94K _ixys  |
 | xperience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 |
5.18. kgt12n120ndh .pdf Size:1079K _kec  |
 | me ns
TC=125? - 370 -
TC=25? - 15 23
IF = 12A
Irr
Diode Peak Reverse Recovery Current A
di/dt = -200A/? TC=125? - 16 -
s
TC=25? - 1900 3700
Qrr
Diode Reverse Recovery Charge nC
TC=125? - 2800 -
2011. 8. 30 Revision No : 0 3/7
KGT12N120NDH
2011. 8. 30 Revision No : 0 4/7
KGT12N120NDH
2011. 8. 30 Revision No : 0 5/7
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