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2N651A
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: 2N651A
Matériau utilisé: Ge
Polarité du transistor: PNP
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.2
Tension collecteur–base (maximale) Ucb: 45
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 45
Tension émetteur–base (maximale) Ueb: 30
Courant collecteur maximal (Ic): 0.5
Température maximale de jonction (Tj), °C: 90
Fréquence maximale de fonctionnement fT: 1
Capacite collecteur (Cc), pF: 25
Gain en courant DC hFE (hfe): 60
Boitier: TO5
Recherche équivalences (un remplaçant pour le transistor 2N651A
) 2N651A
- Fiche technique PDF, Datasheet
5.1. 2n6515_2n6517_2n6519_2n6520.pdf  Size:229K _motorola  |
 | LL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(1) fT 40 200 MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
Collector–Base Capacitance Ccb — 6.0 pF
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance Ceb pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517 — 80
2N6519, 2N6520 — 100
SWITCHING CHARACTERISTICS
Turn–On Time ton — 200 µs
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc)
Turn–Off Time toff — 3.5 µs
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 |
5.2. 2n6515_2n6516_2n6517_2n6519_2n6520.pdf Size:329K _motorola  |
 | Voltage VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.75
(IC = 20 mAdc, IB = 2.0 mAdc) — 0.85
(IC = 30 mAdc, IB = 3.0 mAdc) — 0.90
Base–Emitter On Voltage VBE(on) — 2.0 Vdc
(IC = 100 mAdc, VCE = 10 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(1) fT 40 200 MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
Collector–Base Capacitance Ccb — 6.0 pF
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance Ceb pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515 thru 2N6517 |
5.3. 2n6518.pdf Size:26K _fairchild_semi  |
 |
Across the board. Around the world.™
The Power Franchise™ OPTOLOGIC® SILENT SWITCHER® VCX™
Programmable Active Droop™ OPTOPLANAR™ SMART START™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR TH |
5.4. 2n6519.pdf Size:26K _fairchild_semi  |
 | und the world.™
The Power Franchise™ OPTOLOGIC® SILENT SWITCHER® VCX™
Programmable Active Droop™ OPTOPLANAR™ SMART START™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LI |
5.5. 2n6517.pdf Size:175K _fairchild_semi  |
 | a = 25oC
0.1
0.4
50 100 150 200 250 300 350
1 10 100 1000
VCB [V], COLLECTOR-BASE VOLTAGE
IC [mA], COLLECTOR CURRENT
Figure 5. Collector CutOff Current Figure 6. Base-Emitter On Voltage
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N6517 Rev. B1 3
2N6517 — NPN Epitaxial Silicon Transistor
FE
h , DC CURRENT GAIN
CE
V
(sat) [V], SATURATION VOLTAGE
EBO
I
[nA], Emitter Cut Off Current
BE
V
(sat) [V], SATURATION VOLTAGE
CBO
I
[nA], Collector CutOff Current |
5.6. 2n6515.pdf Size:43K _samsung 5.7. 2n6517.pdf Size:21K _samsung 5.8. 2n6516.pdf Size:35K _samsung 5.9. 2n6515_2n6517_2n6520.pdf Size:116K _onsemi  |
 | 100 mAdc, VCE = 10 Vdc) 2N6515 25 -
2N6517, 2N6520 15 -
Collector-Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) - 0.30
(IC = 20 mAdc, IB = 2.0 mAdc) - 0.35
(IC = 30 mAdc, IB = 3.0 mAdc) - 0.50
(IC = 50 mAdc, IB = 5.0 mAdc) - 1.0
Base-Emitter Saturation Voltage VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) - 0.75
(IC = 20 mAdc, IB = 2.0 mAdc) - 0.85
(IC = 30 mAdc, IB = 3.0 mAdc) - 0.90
Base-Emitter On Voltage VBE(on) - 2.0 Vdc
(IC = 100 mAdc, VCE = 10 Vdc)
SMALL |
5.10. 2n6511.pdf Size:11K _semelab 5.11. 2n6512.pdf Size:11K _semelab 5.12. 2n6517.pdf Size:130K _secos D'autres types de transistors... 2N6512
, 2N6513
, 2N6514
, 2N6515
, 2N6516
, 2N6517
, 2N6518
, 2N6519
, BC548
, 2N652
, 2N6520
, 2N6521
, 2N6522
, 2N6523
, 2N6524
, 2N6525
, 2N6526
.
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