2SB1342 - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: 2SB1342

Matériau utilisé: Si

Polarité du transistor: PNP

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 30

Tension collecteur–base (maximale) Ucb: 80

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 80

Tension émetteur–base (maximale) Ueb: 5

Courant collecteur maximal (Ic): 4

Température maximale de jonction (Tj), °C: 175

Fréquence maximale de fonctionnement fT:

Capacite collecteur (Cc), pF:

Gain en courant DC hFE (hfe): 3000

Boitier: TO220

Recherche équivalences (un remplaçant pour le transistor 2SB1342 )

2SB1342 PDF doc:

1.1. 2sb1342.pdf Size:39K _rohm

2SB1474 / 2SB1342 Transistors Transistors 2SD1933 (94S-181-B400) (94L-906-D400) 298

1.2. 2sb1342.pdf Size:112K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1342 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High DC current gain Ў¤ Low saturation voltage Ў¤ DARLINGTON APPLICATIONS Ў¤ For low frequency power amplifier and power driver applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Fig.1 simplified outline (TO-220Fa) and symbol HAN INC Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -80 -80 -7 -4 -6 UNIT V V V A A Open collector Ta=25Ўж PC Collector power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature 2 W 30 150 -55~150 Ўж Ўж

4.1. 2sb1340_1-2.pdf Size:58K _rohm

4.2. 2sb1340.pdf Size:38K _rohm

2SB1340 Transistors Transistors 2SD1889 (96-650-B88) (96-765-D88) 288

4.3. 2sb1344.pdf Size:38K _rohm

2SB1344 Transistors Transistors 2SD2025 (94L-374-B403) (94L-969-D403) 299

4.4. 2sb1347.pdf Size:53K _panasonic

Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Unit: mm Complementary to 2SD2029 ? 3.3± 0.2 20.0± 0.5 5.0± 0.3 3.0 Features Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics Wide area of safe operation (ASO) 1.5 High transition frequency fT Optimum for the output stage of a HiFi audio amplifier 1.5 2.0± 0.3 2.7± 0.3 3.0± 0.3 Absolute Maximum Ratings (TC=25?C) 1.0± 0.2 Parameter Symbol Ratings Unit 0.6± 0.2 Collector to base voltage VCBO –160 V 5.45± 0.3 10.9± 0.5 Collector to emitter voltage VCEO –160 V Emitter to base voltage VEBO –5 V 1:Base Peak collector current ICP –20 A 2:Collector 1 2 3 3:Emitter Collector current IC –12 A TOP–3L Package Collector power TC=25° C 120 PC W dissipation Ta=25° C 3.5 Junction temperature Tj 150 ?C Storage temperature Tstg –55 to +150 ?C Electrical Characteristics (TC=25?C) Parameter Symbol Conditions min typ max Unit Co

4.5. 2sb1345.pdf Size:120K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1345 DESCRIPTION · ·With TO-247 package ·Complement to type 2SD2062 ·Low collector saturation voltage APPLICATIONS ·For power drvier and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1345 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=

4.6. 2sb1343.pdf Size:229K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1343 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -10 A Collector Power Dissipation 2 @Ta=25? PC W Collector Power Dissipation 40 @TC=25? Junction Temperature 150 ? TJ Storage Temperature -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1343 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO

4.7. 2sb1347.pdf Size:229K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1347 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2029 APPLICATIONS ·Power amplifier applications ·Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -20 A Collector Power Dissipation 120 @ TC=25? PC W Collector Power Dissipation 3.5 @ Ta=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1347 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIO

4.8. 2sb1340.pdf Size:125K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1340 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1889 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -10 A Collector Power Dissipation 2 @Ta=25? PC W Collector Power Dissipation 30 @TC=25? Junction Temperature 150 ? TJ Storage Temperature -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1340 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX

4.9. 2sb1341.pdf Size:229K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1341 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A Collector Power Dissipation 2 @Ta=25? PC W Collector Power Dissipation 35 @TC=25? Junction Temperature 150 ? TJ Storage Temperature -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1341 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Coll

4.10. 2sb1344.pdf Size:112K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1344 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High DC current gain Ў¤ Low saturation voltage Ў¤ DARLINGTON Ў¤ Complement to type 2SD2025 APPLICATIONS Ў¤ For low frequency power amplifier and power driver applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM HAN C PARAMETER Open base Fig.1 simplified outline (TO-220Fa) and symbol IN Collector-base voltage SEM GE CONDITIONS OND IC TOR UC VALUE -100 -100 -7 -8 -10 UNIT V V V A A Open emitter Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Open collector Ta=25Ўж PC Collector power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature 2 W 30 150 -55~150 Ўж Ўж

D'autres types de transistors... 2SB1334 , 2SB1335 , 2SB1337 , 2SB1338 , 2SB1339 , 2SB134 , 2SB1340 , 2SB1341 , 2N3563 , 2SB1343 , 2SB1344 , 2SB1345 , 2SB1346 , 2SB1347 , 2SB1348 , 2SB1349 , 2SB135 .