2SB1375
- Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors. Marquage composant: 2SB1375
Matériau utilisé: Si
Polarité du transistor: PNP
Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 25
Tension collecteur–base (maximale) Ucb: 60
Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 45
Tension émetteur–base (maximale) Ueb: 6
Courant collecteur maximal (Ic): 3
Température maximale de jonction (Tj), °C: 175
Fréquence maximale de fonctionnement fT: 4.5
Capacite collecteur (Cc), pF: 50
Gain en courant DC hFE (hfe): 120
Boitier: TO220
Recherche équivalences (un remplaçant pour le transistor 2SB1375
) 2SB1375
PDF doc:
1.1. 2sb1375.pdf  Size:181K _toshiba 1.2. 2sb1375.pdf Size:157K _inchange_semiconductor  |
 | Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1375
DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SD2012 Ў¤ Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A Ў¤ Collector power dissipation: PC=25W(TC=25Ўж ) APPLICATIONS Ў¤ Audio frequency power amplifier
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings (Ta=25Ўж )
SYMBOL VCBO VCEO VEBO IC IB
HAN C
PARAMETER
Fig.1 simplified outline (TO-220F) and symbol
IN
Collector-base voltage
SEM GE
Open base
CONDITIONS
OND IC
TOR UC
VALUE -60 -60 -7 -3 -0.5
UNIT V V V A A
Open emitter
Collector-emitter voltage
Emitter-base voltage Collector current Base current
Open collector
Ta=25Ўж PC Collector dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature
2.0 W 25 150 -55~150 Ўж Ўж
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1.3. 2sb1375.pdf Size:241K _lge  |
 | 2SB1375(PNP)
TO-220 Transistor
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
3
2
1
Features
High Power Dissipation: PC=25W(TC=25?)
Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A)
Collector metal(Fin)is Coverd with Mold Regin
Complementary to 2SD2012
MAXIMUM RATINGS (TA=25? unless otherwise noted )
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -7 V
IC Collector Current -Continuous -3 A
PC Collector Dissipation 2 W
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100ВµA,IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC=-50mA,IB=0 -60 V
Emitter-base breakdown voltage V(BR)EBO IE=-100ВµA,IC=0 -7 V
Collector cut-off current ICBO |
D'autres types de transistors... 2SB1368
, 2SB1369
, 2SB136A
, 2SB137
, 2SB1370
, 2SB1371
, 2SB1372
, 2SB1373
, BC137
, 2SB1376
, 2SB1377
, 2SB1378
, 2SB138
, 2SB1381
, 2SB1382
, 2SB1383
, 2SB1386
.
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