2SB149N - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: 2SB149N

Matériau utilisé: Ge

Polarité du transistor: PNP

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 25

Tension collecteur–base (maximale) Ucb: 60

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 0

Tension émetteur–base (maximale) Ueb: 30

Courant collecteur maximal (Ic): 7

Température maximale de jonction (Tj), °C: 75

Fréquence maximale de fonctionnement fT: 0.1

Capacite collecteur (Cc), pF:

Gain en courant DC hFE (hfe): 60

Boitier: TO3

Recherche équivalences (un remplaçant pour le transistor 2SB149N )

2SB149N - Fiche technique PDF, Datasheet

4.1. 2sb1495.pdf Size:179K _toshiba

4.2. 2sb1492_2SD2254.pdf Size:57K _panasonic

( ) ( ) BE(sat) C ( ) C Collector current I A Collector power dissipation P W Base to emitter saturation voltage V V ( ) ( ) FE CE(sat) ob Forward current transfer ratio h Collector output capacitance C pF Collector to emitter saturation voltage V V ( ) ( ) C on stg f Collector current I A Switching time t ,t ,t µ s Power Transistors 2SD2254 Rth(t) —t 1000 Note: Rth was measured at Ta=25?C and under natural convection. (1) PT=10V ? 0.3A (3W) and w

4.3. 2sb1493.pdf Size:68K _panasonic

tf DC 1 –1 ton 0.3 – 0.3 0.1 – 0.1 0.03 – 0.03 0.01 – 0.01 0 –4 –8 –12 –16 –1 –3 –10 –30 –100 –300 –1000 ( ) ( ) Collector current IC A Collector to emitter voltage VCE V 2 ( ) ( ) CE(sat) C ( ) C Collector current I A Collector power dissipation P W Collector to emitter saturation voltage V V ( ) ( ) FE ob BE(sat) Forward current transfer ratio h Collector output capacitance C pF Base to emitter saturation voltage V V ( ) ( ) C on stg f Collector

4.4. 2sb1490.pdf Size:95K _panasonic

5?C Duty cycle=1% C I /I =1000 C B (–I =I ) B1 B2 I CP V =–50V CC 10 -10 T =25?C C t=1ms I C t=10ms t stg t f DC 1 -1 t on 0.1 - 0.1 0.01 - 0.01 0 -4 -8 -12 -16 -1 -10 -100 -1 000 Collector current IC (A) Collector-emitter voltage VCE (V) SJD00077BED 2 CE(sat) C C Collector current I (A) Collector power dissipation P (W) Collector-emitter saturation voltage V (V) ob C (pF) FE BE(sat) Forward current transfer ratio h Base-emitter saturation voltage V (V

4.5. 2sb1494.pdf Size:35K _hitachi

0 g 5.0 ± 0.3 1.0 0.5 19.9 ± 0.2 14.9 ± 0.2 0.3 2.0 18.0 ± 0.5 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

4.6. 2sb1490.pdf Size:233K _inchange_semiconductor

4.7. 2sb1495.pdf Size:225K _inchange_semiconductor

D'autres types de transistors... 2SB148 , 2SB1481 , 2SB1488 , 2SB1489 , 2SB149 , 2SB1490 , 2SB1494 , 2SB1495 , BC137 , 2SB15 , 2SB150 , 2SB151 , 2SB152 , 2SB152A , 2SB153 , 2SB1530 , 2SB154 .