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1MB05-120 IGBT (IC) Datasheet. Cross Reference Search. 1MB05-120 Equivalent

Type Designator: 1MB05-120

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 100W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 3.5V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 9A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 1200

Maximum collector capacity (Cc), pF:

Package: TO3P

1MB05-120 Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: 10N40E1D , 10N40F1D , 10N50C1D , 10N50E1D , 10N50F1D , 12N60C3D , 14N36GVL , 1MB03D-120 , 10N40F1D , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 , 1MB20D-060 .

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 1MB05-120 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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